Vladimir P. Popov

A Project of Bipolar Field-Effect Transistor (IGBT) 50 A 1800 V Manufactured on the Plates of High-Resistance Crucible-Free Silicon with the Orientation (100)

Eugenie V. Chernyavsky, Vladimir P. Popov, Yuri S. Pakhmutov, 2001 .

Reverse characteristics of a snappy recovery diode with the current snubber in comparison with a soft recovery diode and SiC Schottky type diode

Vladimir P. Popov, Yuriy I. Krasnikov, 2009, 2009 13th European Conference on Power Electronics and Applications.