Siddharth Rajan

发表

Prospects for the application of GaN power devices in hybrid electric vehicle drive systems

Ming Su, Chingchi Chen, Siddharth Rajan, 2013 .

Design and analysis of systems based on RF receivers with multiple carbon nanotube antennas

Eylem Ekici, Can Emre Koksal, Siddharth Rajan, 2010, Nano Commun. Networks.

Graded nanowire ultraviolet LEDs by polarization engineering

Thomas F. Kent, Siddharth Rajan, Robert F. Klie, 2012, Other Conferences.

Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy

Christiane Poblenz, Umesh K. Mishra, Patrick Waltereit, 2006, IEICE Trans. Electron..

Calibrated Digital Predistortion Using a Vector Network Analyzer as the Receiver

Yunsik Hahn, Patrick Roblin, Siddharth Rajan, 2019, 2019 93rd ARFTG Microwave Measurement Conference (ARFTG).

Gallium nitride electronics

Debdeep Jena, Siddharth Rajan, D. Jena, 2013 .

Distributed intelligence using gallium nitride based active devices

Gregory N. Washington, Siddharth Rajan, Pil Sung Park, 2010, Smart Structures and Materials + Nondestructive Evaluation and Health Monitoring.

Design and Demonstration of (AlxGal-x)2O3/Ga2O3Double Heterostructure Field Effect Transistor (DHFET)

Siddharth Rajan, Yuewei Zhang, Zhanbo Xia, 2018, 2018 76th Device Research Conference (DRC).

III-nitride tunnel junctions for efficient solid state lighting

Siddharth Rajan, Sriram Krishnamoorthy, Fatih Akyol, 2014, Photonics West - Optoelectronic Materials and Devices.

All MOCVD grown 250 nm gate length Al0.70Ga0.30N MESFETs

Asif Khan, Hao Xue, Siddharth Rajan, 2018, 2018 76th Device Research Conference (DRC).

Low resistance GaN/InGaN/GaN tunnel junctions

Siddharth Rajan, Pil Sung Park, Sriram Krishnamoorthy, 2012, 1211.4905.

Electrical properties of atomic layer deposited aluminum oxide on gallium nitride

Siddharth Rajan, Ting-Hsiang Hung, Sriram Krishnamoorthy, 2011, 1109.2566.

Interband tunneling for hole injection in III-nitride ultraviolet emitters

Michael W. Moseley, Siddharth Rajan, Jinwoo Hwang, 2015, 1502.02080.

N‐face high electron mobility transistors with a GaN‐spacer

James S. Speck, Umesh K. Mishra, Siddharth Rajan, 2007 .

A study of electrically active traps in AlGaN/GaN high electron mobility transistor

Siddharth Rajan, Ting-Hsiang Hung, T. P. Ma, 2013 .

Enhanced light extraction in tunnel junction-enabled top emitting UV LEDs

Michael W. Moseley, Siddharth Rajan, Yuewei Zhang, 2015, 1512.02260.

Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs

Siddharth Rajan, Ting-Hsiang Hung, Pil Sung Park, 2014, IEEE Electron Device Letters.

Room Temperature Intrinsic Ferromagnetism in Epitaxial Manganese Selenide Films in the Monolayer Limit.

Siddharth Rajan, J. Gupta, S. Rajan, 2018, Nano letters.

p-type doping of MoS2 thin films using Nb

Thomas F. Kent, Siddharth Rajan, Stephen J. Pennycook, 2014 .

High current density 2D/3D MoS2/GaN Esaki tunnel diodes

Siddharth Rajan, Jinwoo Hwang, Yuewei Zhang, 2016, 1606.00509.

High responsivity in molecular beam epitaxy grown beta-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector

Siddharth Rajan, Rangarajan Muralidharan, Zhanbo Xia, 2017, 1702.04470.

N-polar GaN epitaxy and high electron mobility transistors

James S. Speck, Umesh K. Mishra, Uttam Singisetti, 2013 .

Tunnel-injected sub-260 nm ultraviolet light emitting diodes

Michael W. Moseley, Siddharth Rajan, Andrew A. Allerman, 2017, 1703.00117.

Numerical Analysis of Terahertz Emissions From an Ungated HEMT Using Full-Wave Hydrodynamic Model

John L. Volakis, Shubhendu Bhardwaj, Siddharth Rajan, 2016, IEEE Transactions on Electron Devices.

Determination of trap energy levels in AlGaN/GaN HEMT

Siddharth Rajan, Digbijoy Nath, Ting-Hsiang Hung, 2013, 71st Device Research Conference.

Pulsed-IV Pulsed-RF Cold-FET Parasitic Extraction of Biased AlGaN/GaN HEMTs Using Large Signal Network Analyzer

Patrick Roblin, Christiane Poblenz, Siddharth Rajan, 2010, IEEE Transactions on Microwave Theory and Techniques.

Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors

Christiane Poblenz, James S. Speck, Umesh K. Mishra, 2004 .

Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition

James S. Speck, Umesh K. Mishra, S. P. DenBaars, 2008 .

Large Area Single Crystal (0001) Oriented MoS2 Thin Films

Siddharth Rajan, Wu Lu, Pil Sung Park, 2013, 1302.3177.

Delta-doped β-gallium oxide field-effect transistor

Siddharth Rajan, Zhanbo Xia, Sriram Krishnamoorthy, 2017 .

N-polar GaN∕AlGaN∕GaN high electron mobility transistors

James S. Speck, Umesh K. Mishra, Siddharth Rajan, 2007 .

Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes

Saurabh Lodha, Siddharth Rajan, Hongping Zhao, 2018 .

Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes

Siddharth Rajan, Pil Sung Park, Sriram Krishnamoorthy, 2012 .

Interfacial charge effects on electron transport in III-Nitride metal insulator semiconductor transistors

Siddharth Rajan, Ting-Hsiang Hung, Michele Esposto, 2011 .

N-Polar III–Nitride Green (540 nm) Light Emitting Diode

Siddharth Rajan, Pil Sung Park, Fatih Akyol, 2011 .

Polarization-induced pn diodes in wide-band-gap nanowires with ultraviolet electroluminescence.

Siddharth Rajan, M. Mills, S. Rajan, 2012, Nano letters.

Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces

Siddharth Rajan, Susanne Stemmer, Pouya Moetakef, 2011 .

Resonant tunneling assisted propagation and amplification of plasmons in high electron mobility transistors

John L. Volakis, Huili Grace Xing, Shubhendu Bhardwaj, 2016 .

Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors

Steven A. Ringel, Umesh K. Mishra, Siddharth Rajan, 2013 .

Structural Properties of GaN Buffer Layers on 4H-SiC(0001) Grown by Plasma-Assisted Molecular Beam Epitaxy for High Electron Mobility Transistors

Christiane Poblenz, James S. Speck, Umesh K. Mishra, 2004 .

AlGaN Channel High Electron Mobility Transistors: Device Performance and Power-Switching Figure of Merit

James S. Speck, Umesh K. Mishra, Siddharth Rajan, 2008 .

A heterojunction modulation-doped Mott transistor

Siddharth Rajan, Susanne Stemmer, S. James Allen, 2011, 1109.5299.

Demonstration of high mobility and quantum transport in modulation-doped β-( AlxGa 1x ) 2 O 3 / Ga 2 O 3 heterostructures

Siddharth Rajan, Jinwoo Hwang, Yuewei Zhang, 2018 .

Energy band engineering for photoelectrochemical etching of GaN/InGaN heterostructures

Gregory N. Washington, Siddharth Rajan, Prashanth Ramesh, 2014 .

Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces

Siddharth Rajan, Ting-Hsiang Hung, Pil Sung Park, 2013 .

Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors

Saurabh Lodha, Siddharth Rajan, Yuewei Zhang, 2018, Applied Physics Letters.

Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs

Michael W. Moseley, Siddharth Rajan, Andrew A. Allerman, 2017, 1705.08414.

Growth and Electrical Characterization of N-face AlGaN/GaN Heterostructures

James S. Speck, Umesh K. Mishra, Siddharth Rajan, 2005 .