A. Sobiesierski

发表

Electrically pumped continuous-wave III–V quantum dot lasers on silicon

Wei Li, Peter Michael Smowton, Alwyn J. Seeds, 2016, Nature Photonics.

In situ annealing enhancement of the optical properties and laser device performance of InAs quantum dots grown on Si substrates.

Richard Beanland, Samuel Shutts, Jiang Wu, 2016, Optics express.

Improving the Optical Bandwidth of Passively Mode-Locked InAs Quantum Dot Lasers

P. Smowton, A. Sobiesierski, P. Blood, 2015, IEEE Journal of Selected Topics in Quantum Electronics.

Degradation of III–V Quantum Dot Lasers Grown Directly on Silicon Substrates

P. Smowton, Huiyun Liu, C. Spinnler, 2019, IEEE Journal of Selected Topics in Quantum Electronics.

Faraday-cage-assisted etching of suspended gallium nitride nanostructures

D. Beggs, A. Sobiesierski, A. Bennett, 2020 .

Dot state properties of 1.3 µm low-loss InAs quantum dot lasers grown directly on Si

S. Elliott, P. Smowton, M. Tang, 2016, 2016 International Semiconductor Laser Conference (ISLC).

Femtosecond pulse generation in passively mode locked InAs quantum dot lasers

P. Smowton, A. Sobiesierski, P. Blood, 2013 .

AlGaInP laser diodes incorporating a 3λ∕4 multiple quantum barrier

M. R. Brown, A. Krysa, P. Smowton, 2005 .

Modeling multiple quantum barrier effects and reduced electron leakage in red-emitting laser diodes

R. J. Cobley, M. R. Brown, P. Smowton, 2006 .

The lateral ambipolar diffusion length in quantum dot lasers

Peter Michael Smowton, Angela Sobiesierski, Deepal Naidu, 2011, OPTO.

Analysing radiative and non-radiative recombination in InAs QDs on Si for integrated laser applications

D. J. Mowbray, Peter M. Smowton, Robert J. Young, 2016, SPIE OPTO.

Fabrication of high-aspect-ratio, sub-micron gratings in AlGaInP/GaAs laser structures using a BCl3/Cl2/Ar inductively coupled plasma

P. Smowton, A. Sobiesierski, D. Westwood, 2007 .