S. Shastry

发表

Van der Waals bonding of GaAs on Pd leads to a permanent, solid‐phase‐topotaxial, metallurgical bond

Eli Yablonovitch, I. Schnitzer, D. M. Hwang, 1991 .

High‐speed InP/GaInAs heterojunction phototransistor on InP‐on‐Si grown by organometallic vapor phase epitaxy

J. Salerno, S. Shastry, D. Hill, 1991 .

Photoluminescence Study of GaAs/AlGaAs Quantum Wells Grown On Si Substrates

S. Zemon, B. Elman, C. Jagannath, 1987 .

Photoluminescence and photoluminescence excitation spectra of GaAs grown directly on Si

S. Zemon, G. Lambert, C. Jagannath, 1986 .

Photoluminescence and photoluminescence excitation spectra of GaAs grown directly on Si

S. Zemon, G. Lambert, C. Jagannath, 1986 .

Control of residual impurities in very high purity GaAs grown by organometallic vapor phase epitaxy

S. Zemon, G. Lambert, S. Shastry, 1988 .

Nucleation and Growth Processes in OMCVD of GaAs

S. Shastry, J. Hefter, 1987 .

Resonant photoluminescence excitation in GaAs grown directly on Si

S. Zemon, G. Lambert, W. Miniscalco, 1988 .

A Simple Open‐Tube Zn‐Diffusion Technique for GaAs and AlGaAs

A. Choudhury, M. Rothman, S. Shastry, 1987 .

Interface reactions and grain growth processes in poly-GaAs deposited on molybdenum substrates by the organometallic process

S. Ghandhi, S. Shastry, 1983 .

Metalorganic chemical vapor deposition of very thin (≂2 μm), oriented GaAs layers on tungsten substrates

S. Shastry, 1982 .

Characterization of high quality GaInP/GaAs superlattices grown on GaAs and Si substrates by gas source molecular beam epitaxy

M. Razeghi, S. Shastry, S. Slivken, 1994 .

The preparation and properties of thin polycrystalline GaAs solar cells with grain boundary edge passivation

S. Ghandhi, J. Borrego, S. Shastry, 1980, IEEE Transactions on Electron Devices.

A Theoretical Study of Condensation Processes in OMCVD of GaAs

S. Shastry, 1987 .

Observation of the N=2 excited states of the light and heavy hole excitons in GaAs grown directly on Si by OMVPE

S. Zemon, G. Lambert, C. Jagannath, 1988 .

Low pressure organometallic vapor phase epitaxial growth of device quality GaAs directly on (100) Si

S. Zemon, S. Shastry, 1986 .

Modeling and performance evaluation of wide bandgap semiconductors devices for high power applications

B. N. Shashikala, B. S. Nagabhushana, S. K. Shastry, 2010, ICN 2010.

Epitaxial GaAs grown directly on (100)Si by low pressure MOVPE using low temperature processing

S. Zemon, S. Shastry, M. Oren, 1986 .