S. Ruvimov

Z. Liliental-Weber, D. Qiao, S. Ruvimov, 1998, Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159).

3D Arrays of Quantum Dots for Laser Applications

N. Ledentsov, A. Zhukov, V. Ustinov, 1996 .

Formation Mechanism of Nanotubes in GaN

Z. Liliental-Weber, S. Ruvimov, J. Washburn, 1997 .

Transition thickness of semiconductor heteroepitaxy

Z. Liliental-Weber, E. Weber, A. Sasaki, 2000 .

RADIATIVE RECOMBINATION IN TYPE-II GASB/GAAS QUANTUM DOTS

N. Ledentsov, Z. Alferov, U. Gösele, 1995 .

In situ Raman scattering studies of the amorphous and crystalline Si nanoparticles

Z. Liliental-Weber, A. Sirenko, X. Xi, 2000 .

Comments on "Lasing at Three-Dimensionally Quantum-Confined Sublevel of Self-organized Ino,SGao.SAs Quantum Dots by Current Injection"

John E. Bowers, Arthur C. Gossard, Dieter Bimberg, 1996 .

Crystallization of amorphous Cu50Ti50 alloy prepared by high-energy ball milling

A. Mukasyan, S. Ruvimov, A. Rogachev, 2018 .

Strain-stabilized structures on silicon grown with MBE

H. Osten, H. Rücker, E. Bugiel, 1995 .

Structural characterization of SinC δ layers embedded in a silicon matrix

H. Osten, E. Bugiel, S. Ruvimov, 1995 .

Molecular beam epitaxy growth and characterization of thin (<2 mu m) GaSb layers on GaAs(100) substrates

Yury A. Kovalenko, V. Ustinov, A. A. Bakun, 1993 .

Burgers vector determination in TEM by using the dislocation parity analysis

S. Ruvimov, K. Scheerschmidt, 1994 .

Structural transformation of CsI thin film photocathodes under exposure to air and UV irradiation

Anton S. Tremsin, O. H. W. Siegmund, A. Tremsin, 2000 .

A Classification of the Dislocation‐Related Photoluminescencence in Silicon

S. Ruvimov, A. Sitnikova, Y. Rebane, 1992 .

Nucleation and evolution of misfit dislocations in ZnSe/GaAs (001) heterostructures grown by low‐pressure organometallic vapor phase epitaxy

Z. Liliental-Weber, E. Bourret, S. Ruvimov, 1996 .

Effect of matrix on InAs self-organized quantum dots on InP substrate

A. R. Kovsh, Eicke R. Weber, A. E. Zhukov, 1998 .

Molecular-beam epitaxy of heterostructures of wide-gap II–VI compounds for low-threshold lasers with optical and electron pumping

G. P. Yablonskii, S. Ruvimov, P. Kop’ev, 2015 .

Tem/Hrem Structural Characterization of Directionally Solidified Gaas-Cras Eutectic Crystals

Z. Liliental-Weber, S. Ruvimov, J. Washburn, 1995 .

Ordered arrays of quantum dots: Formation, electronic spectra, relaxation phenomena, lasing

Nikolai N. Ledentsov, Vitaly A. Shchukin, Sergei V. Zaitsev, 1996 .

CARRIER DYNAMICS IN TYPE-II GASB/GAAS QUANTUM DOTS

Nikolai N. Ledentsov, Dieter Bimberg, Marius Grundmann, 1998 .

InAs–GaAs Quantum Pyramid Lasers: In Situ Growth, Radiative Lifetimes and Polarization Properties

Nikolai N. Ledentsov, Dieter Bimberg, Marius Grundmann, 1996 .

Microstructure of Ti/Al ohmic contacts for n-AlGaN

Paul K. Chu, Jack Washburn, P. Chu, 1998 .

Nucleation of cubic GaN/GaAs (001) grown by gas source molecular beam epitaxy with hydrazine

H. Temkin, V. G. Antipov, S. Nikishin, 1996 .

Strained-submonolayer and quantum-dot superstructures

N. Ledentsov, D. Bimberg, A. Egorov, 1995 .

Effect of Si doping on the dislocation structure of GaN grown on the A‐face of sapphire

Eicke R. Weber, Isamu Akasaki, Joel W. Ager, 1996 .

Photoluminescence and Electronic Structure of Dislocations in Si Crystals

S. Ruvimov, A. Sitnikova, Y. Rebane, 1992 .

Quantum dot injection heterolaser with ultrahigh thermal stability of the threshold current up to 50 °C

D. Bimberg, N. N. Ledentsov, Yu. M. Shernyakov, 1997 .

GaN thin films by growth on Ga-rich GaN buffer layers

Z. Liliental-Weber, E. Weber, S. Ruvimov, 2000 .

InAs/GaAs quantum dots radiative recombination from zero‐dimensional states

Nikolai N. Ledentsov, Dieter Bimberg, Marius Grundmann, 1995 .

X-ray Triple-Crystal Diffractometry and Transmission Electron Microscopy Characterization of Defects in Lattice-Mismatched Epitaxic Structures

S. Ruvimov, T. Argunova, R. Kyutt, 1995 .

HREM simulations of particles and interfaces refined by molecular dynamics relaxations

S. Ruvimov, K. Scheerschmidt, D. Timpel, 1996 .

Characterization of interface structures in nanocrystalline germanium by means of high-resolution electron microscopy and molecular dynamics simulations

S. Ruvimov, W. Neumann, H. Hofmeister, 1996 .

Structural characterization of bulk GaN crystals grown under high hydrostatic pressure

M. Boćkowski, C. Kisielowski, Z. Liliental-Weber, 1996 .

Electronic structure and energy relaxation in strained InAs/GaAs quantum pyramids

Nikolai N. Ledentsov, Dieter Bimberg, Marius Grundmann, 1996 .

Microstructure of GaN layers grown on (001) GaAs by plasma assisted molecular-beam epitaxy

T. Drummond, Z. Liliental-Weber, M. Hafich, 1997 .

Effect of stoichiometry on defect distribution in cubic GaN grown on GaAs by plasma-assisted MBE

T. Drummond, Z. Liliental-Weber, S. Ruvimov, 1996 .

Self-forming InAs/GaP quantum dots by direct island growth

Z. Liliental-Weber, J. Woodall, S. Fafard, 1998 .

Formation of coherent superdots using metal‐organic chemical vapor deposition

Mikhail V. Maximov, D. Bimberg, N. N. Ledentsov, 1996 .

Krüger, Suski, Krueger, 1996, Physical review. B, Condensed matter.

Dislocation structure of epitaxial GaSb films grown on (001) GaAs substrates by molecular beam epitaxy

A. Tybulewicz, S. Ruvimov, P. Kop’ev, 1993 .

Mechanisms of generation and atomic structure of defects in III-nitrides epitaxial systems for device applications

H. Amano, I. Akasaki, Z. Liliental-Weber, 1998, Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159).

Al-based thermal oxides in vertical cavity surface emitting lasers

Eicke R. Weber, Meng Li, Constance J. Chang-Hasnain, 1997, Photonics West.

Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth.

Egorov, Zhukov, Alferov, 1996, Physical review. B, Condensed matter.

Correlation of microstructure with electrical behavior of Ti/GaN schottky contacts

E. Haller, Z. Liliental-Weber, K. Duxstad, 1998 .

Tem/Hrem Analysis of Defects in GaN Epitaxial Layers Grown by MOVPE on SiC and Sapphire

H. Amano, I. Akasaki, M. Koike, 1997 .

Atomic Structure Of Grain Boundaries And Interfaces In Iiinitrides Epitaxial Systems

H. Amano, I. Akasaki, M. Koike, 1997 .

Effect of Si Doping on The Structure of Gan

C. Kuo, H. Amano, I. Akasaki, 1996 .