J. Baribeau

发表

Quantum confinement and light emission in SiO2/Si superlattices

D. J. Lockwood, Z. Lu, J. Baribeau, 1995, Nature.

Free carrier and lattice-heating-induced changes to the reflectivity of epitaxial GeSi alloys following picosecond pulse excitation

Jeff F. Young, A. Othonos, J. Baribeau, 1992 .

Syntheses, phase behavior, supramolecular chirality, and field-effect carrier mobility of asymmetrically end-capped mesogenic oligothiophenes.

Zhengyu Lu, P. Xia, M. Wong, 2009, Chemistry.

3,7-Bis(2-oxoindolin-3-ylidene)benzo[1,2-b:4,5-b′]difuran-2,6-dione Dicyanides with Engineered Side Chains for Unipolar n-Type Transistors

Yuning Li, Jesse Quinn, A. Dadvand, 2020 .

Self-Assembled Si 1- x Ge x Dots and Islands

D. J. Lockwood, J. Baribeau, N. Rowell, 2006 .

Ge dots and nanostructures grown epitaxially on Si

David J. Lockwood, Nelson L. Rowell, D. J. Lockwood, 2006 .

Carrier recombination in tailored multilayer Si/Si1−xGex nanostructures

D. J. Lockwood, J. Baribeau, L. Tsybeskov, 2014 .

Fast and intense photoluminescence in a SiGe nano-layer embedded in multilayers of Si/SiGe clusters

D. J. Lockwood, J. Baribeau, L. Tsybeskov, 2013 .

Silicon–germanium nanostructures for on-chip optical interconnects

D. J. Lockwood, T. Kamins, J. Baribeau, 2009 .

Si/Si1−xGex photodetectors using three-dimensional growth modes to enhance photoresponse at λ=1550 nm

Siegfried Janz, Dan-Xia Xu, M. Pearson, 2000 .

Photoluminescence and Raman spectral study of C incorporation in strained Si1-x-yGexCy epilayers on Si(100)

D. J. Lockwood, J. Baribeau, N. Rowell, 2008 .

Type-I interband cascade lasers near 3.2μm

Y. Jiang, E. Dupont, J. Baribeau, 2015, 2015 Conference on Lasers and Electro-Optics (CLEO).

An annealing study of strain relaxation and dislocation generation in Si1−xGex/Si heteroepitaxy

D. J. Lockwood, J. Baribeau, J. McCaffrey, 1990 .

Reversible Degradation of Photoluminescence in Si/SiGe Three Dimensional Nanostructures

D. J. Lockwood, J. Baribeau, N. Modi, 2012 .

Excitation wavelength dependent photoluminescence in structurally non-uniform Si/SiGe-island heteroepitxial multilayers

D. J. Lockwood, J. Baribeau, N. Modi, 2012 .

Raman and transmission electron microscopy study of disordered silicon grown by molecular beam epitaxy

David J. Lockwood, Li-Lin Tay, G. I. Sproule, 2004 .

Crystallinity, order, the thin-film silicon continuum, and the spectral dependence of the refractive index in thin silicon films grown through ultra-high-vacuum evaporation for a range of growth temperatures

D. J. Lockwood, M. Nöel, J. Zwinkels, 2021 .

An amorphous-to-crystalline phase transition within thin silicon films grown through ultra-high-vacuum evaporation on fused quartz substrates

D. J. Lockwood, M. Nöel, J. Zwinkels, 2016 .

An amorphous-to-crystalline phase transition within thin silicon films grown by ultra-high-vacuum evaporation and its impact on the optical response

D. J. Lockwood, M. Nöel, J. Zwinkels, 2016 .

Molecular Beam Epitaxially Deposited Amorphous Silicon

D. J. Lockwood, M. Nöel, J. Zwinkels, 2000 .

Si/Ge heterostructure on sulphur passivated GaAs(110)

J. Baribeau, S. Ingrey, W. Lau, 1997 .

Effects of small specimen tilt and probe convergence angle on ADF-STEM image contrast of Si(0.8)Ge(0.2) epitaxial strained layers on (100) Si.

M. Kawasaki, J. Baribeau, M. Robertson, 2012, Ultramicroscopy.

Lattice vibrations of Si1-xCx epilayers on Si(100)

D. J. Lockwood, J. Baribeau, H. Xu, 2003 .

Heterogeneous nucleation sources in molecular beam epitaxy-grown GexSi1−x/Si strained layer superlattices

G. Weatherly, J. Baribeau, D. Houghton, 1989 .

Si/SiGe Heterointerfaces in One-, Two-, and Three-Dimensional Nanostructures: Their Impact on SiGe Light Emission

D. J. Lockwood, J. Baribeau, L. Tsybeskov, 2016, Front. Mater..

Three-Dimensional Silicon-Germanium Nanostructures for CMOS Compatible Light Emitters and Optical Interconnects

D. J. Lockwood, T. Kamins, J. Baribeau, 2008 .

Ge and Gesl Heteroepitaxy on Si(100) by MBE

C. C. Tan, J. Baribeau, D. Houghton, 1986 .

X‐ray reflectometry on (SimGen)p short‐period superlattices

J. Baribeau, 1991 .

Disorder and the optical properties of amorphous silicon grown by molecular beam epitaxy

D. J. Lockwood, M. Nöel, J. Zwinkels, 2001 .

Optical dispersion relationships in amorphous silicon grown by molecular beam epitaxy

D. J. Lockwood, M. Nöel, J. Zwinkels, 2001 .

Effect of Power on the Properties of SiO 2 Films Produced by Plasma-Enhanced Chemical Vapour Deposition

J. Baribeau, M. Graham, D. Xu, 1994 .

Structural Defects in Partially Relaxed InGaAs Layers

A. P. Roth, J. Baribeau, P. Maigné, 1993 .

Triarylamino and Tricyanovinyl End-Capped Oligothiophenes with Reduced Optical Gap for Photovoltaic Applications

P. Xia, M. Wong, Jianping Lu, 2008 .

Inkjet-printed unipolar n-type transistors on polymer substrates based on dicyanomethylene-substituted diketopyrrolopyrrole quinoidal compounds

J. Ding, A. Dadvand, Jianping Lu, 2018, Organic Electronics.

Optical absorption in an amorphous silicon superlattice grown by molecular beam epitaxy

D. J. Lockwood, M. Nöel, J. Zwinkels, 2002 .

Amorphous Silicon Films and Superlattices Grown by Molecular Beam Epitaxy: An Optical Analysis

D. J. Lockwood, M. Nöel, J. Zwinkels, 2002 .

Amorphous Si/insulator multilayers grown by vacuum deposition and electron cyclotron resonance plasma treatment

D. J. Lockwood, J. Baribeau, G. Sproule, 1998 .

Investigation of Si-Ge heterostructures by X-ray reflectometry

J. Baribeau, 1993 .

Influence of annealing on the interface structure and strain relief in Si/Ge heterostructures on (100)Si. Discussion

E. D. Crozier, D. J. Lockwood, T. Tyliszczak, 1993 .

Atomistic processes of surface segregation during SiGe MBE growth

S. Pennycook, J. Baribeau, D. Jesson, 1992 .

Step-driven surface segregation and ordering during Si-Ge MBE growth

S. Pennycook, J. Baribeau, D. Jesson, 1992 .

Direct Imaging of Ordering in Si-Ge Alloys, Ultrathin Superlattices, and Buried Ge Layers

S. Pennycook, J. Baribeau, D. Jesson, 1991 .

Interface Structure of Ge/Si Superlattices Determined by X-Ray Absorption Fine Structure

D. J. Lockwood, T. Tyliszczak, A. Hitchcock, 1991 .

ADF-STEM Imaging of Strained GaN 0.045 As 0.955 Epitaxial Layers on (100) GaAs Substrates

M. Kawasaki, J. Baribeau, J. Gupta, 2006 .

LETTER TO THE EDITOR: Resonant phonon modes in ultra-thin superlattice structures

D. J. Lockwood, J. Baribeau, M. Dharma-wardana, 1989 .

Double-barrier long wavelength SiGe/Si heterojunction internal photoemission infrared photodetectors

P. Chow-Chong, H. Liu, R. Turan, 2004 .

Roughness in Si1−xGex/Si superlattices: Growth temperature dependence

J. Baribeau, R. Headrick, 1995 .

Anisotropic roughness in Ge/Si superlattices

J. Baribeau, Y. Strausser, R. Headrick, 1995 .

X‐ray reflectometry study of interdiffusion in Si/Ge heterostructures

J. Baribeau, 1993 .

High precision structural study of Si/Si1-xGex superlattices

D. J. Lockwood, J. Baribeau, P. Zhang, 1993 .

Capacitance-Voltage characteristics of metal-insulator-semiconductor diodes with S passivation and Si interface control layers on GaAs and InP

Z. Lu, Zhenghong Lu, J. Baribeau, 1994 .

Raman scattering in Si/SiGe nanostructures: Revealing chemical composition, strain, intermixing, and heat dissipation

D. J. Lockwood, J. Baribeau, L. Tsybeskov, 2014 .

Evolving surface cusps during strained-layer epitaxy

S. Pennycook, J. Baribeau, D. Jesson, 1993 .

Strain relaxation in GaNyAs1-y films on (100) GaAs

J. Baribeau, J. Gupta, X. Wu, 2005 .

Interface morphology and relaxation in high temperature grown Si 1−x Ge x /Si superlattices

J. Baribeau, 1995 .

X‐ray diffraction of strain relaxation in Si‐Si1−xGex heterostructures

J. Baribeau, Song Kechang, K. Munro, 1989 .

The Stability of Si-Si 1-x Ge x Strained Layer Heterostructures.

J. Baribeau, D. Houghton, D. Perovic, 1988 .

Observation of lomer-cottrell locks in SiGe strained layers

B. J. Robinson, D. Thompson, J. Baribeau, 1990 .

An annealing study of relaxation and interface quality in Si‐Si1−xGex strained‐layer superlattices

D. J. Lockwood, J. Baribeau, P. Timbrell, 1989 .

Solid phase epitaxial regrowth of Si1−xGex/Si strained-layer structures amorphized by ion implantation

B. J. Robinson, D. Thompson, J. Baribeau, 1989 .

Photoluminescence fatigue in three-dimensional silicon/silicon-germanium nanostructures

D. J. Lockwood, J. Baribeau, N. Modi, 2012 .

Index of Refraction and Strain Induced Birefringence of Pseudomorphic Si 1−x Ge x

D. M. Bruce, P. Jessop, A. Delage, 1997 .

Direct measurement of hot hole distribution in an SiGe unipolar transistor structure

H. Liu, J. Simmons, M. Buchanan, 1993 .

Silicon quantum well as passivation barrier on GaAs surface

Z. Lu, J. Baribeau, 1997 .

X-ray photoelectron spectroscopy studies of Ge epilayers on Si(100)

Z. Lu, J. Baribeau, T. Jackman, 1992 .

Observation of nonequilibrium holes in Si‐SiGe unipolar transistor structures

Hui C. Liu, M. Buchanan, J. Baribeau, 1993 .

Raman scattering studies of phonons in quasiperiodic superlattices based on generalizations of the fibonacci sequence

D. J. Lockwood, J. Baribeau, A. Macdonald, 1990 .

Non-Equilibrium Phonon Dynamics in Ge and GeSi Alloys

Jeff F. Young, D. J. Lockwood, P. Kelly, 1991 .

Surface Stress, Morphological Development, and Dislocation Nucleation During Strained-Layer Epitaxy

S. Pennycook, J. Baribeau, D. Jesson, 1993 .

A diketopyrrolopyrrole conjugated polymer based on 4,4ʹ-difluoro-2,2ʹ-bithiophene for organic thin-film transistors and organic photovoltaics

Yinghui He, Jianping Lu, Y. Tao, 2020 .

Long wavelength infrared photocurrent study of Si‐SiGe heterostructures

J. Simmons, Hui C. Liu, M. Buchanan, 1992 .

Characterization of boron-doped silicon epitaxial layers by x-ray diffraction

J. Baribeau, S. Rolfe, 1991 .

Si K-edge and Ge K-edge X-ray absorption spectroscopy of the SiGe interface in [( Si) m ( Ge) n ] p atomic layer superlattices

J. M. Chen, T. Tyliszczak, Z. Lu, 1993 .

Ideal passivation of luminescent porous silicon by thermal, noncatalytic reaction with alkenes and aldehydes

D. J. Lockwood, R. Boukherroub, F. Bensebaa, 2001 .

Editors' Choice—Optical Emission from Germanium Nanocrystals

D. J. Lockwood, J. Baribeau, D. Houghton, 2018 .

Auger-mediated radiative recombination in three-dimensional silicon/silicon-germanium nanostructures

D. J. Lockwood, T. Kamins, A. Bratkovsky, 2008, 0809.1107.

Coexistence of fast and slow luminescence in three-dimensional Si/Si 1-x Ge x nanostructures

David J. Lockwood, Leonid Tsybeskov, D. J. Lockwood, 2005 .

Photoluminescence and Raman scattering in three-dimensional Si/Si1-xGex nanostructures

David J. Lockwood, Leonid Tsybeskov, D. J. Lockwood, 2004 .

Strain in coherent-wave SiGe/Si superlattices

David J. Lockwood, D. J. Lockwood, H. Shin, 2000 .

Co/SixGe1-x Alloy Formation on Strained SixGe1-x Layers

J. Baribeau, N. Hauser, M. Ridgway, 1992 .

Enhanced Relaxation of Strained GexSi1−x Layers Induced by Co/GexSi1−x Thermal Reaction

J. Baribeau, M. Ridgway, M. R. Rao, 1993 .

Polarization dependence of the Si K-edge X-ray absorption spectra of Si-Ge atomic layer superlattices

T. Tyliszczak, A. Hitchcock, J. Baribeau, 1994 .

FIRST-SHELL BOND LENGTHS IN SIXGE1-X CRYSTALLINE ALLOYS

T. Tyliszczak, A. Hitchcock, J. Baribeau, 1999 .

Influence of Hydrogen On The Solid Phase Epitaxial Regrowth of Strained Layer Silicon Germanium Alloys

I. V. Mitchell, J. Baribeau, T. Lowes, 1995 .

Growth and characterization of Si1−xGex and Ge epilayers on (100) Si

D. C. Houghton, M. W. Denhoff, M. Denhoff, 1988 .

Cosio 2 Formation on Strained Ge x Si 1−x Layers BY Co/Ge x Si 1−x Thermal Reaction

J. Baribeau, R. Pascual, R. Elliman, 1993 .

Electron reflection measurements on W(001) and W(110) between 0 and 40 eV

J. Baribeau, D. Roy, 1986 .

Study of leed fine structures on the O-W(001) system

J. Baribeau, J. Carette, J.-D. Carette, 1983 .

Misfit strain relaxation in GexSi1−x/Si heterostructures: The structural stability of buried strained layers and strained‐layer superlattices

G. Weatherly, J. Baribeau, D. Houghton, 1990 .

Determination of the W(001) and W(110) surface potential barriers

J. Baribeau, J. López, J. L. Bossé, 1985 .

Effect of the variation of the inner potential of the crystal surface in VLEED

J. Baribeau, J. López, J. L. Bossé, 1985 .

Surface science lettersComparison between Rydberg surface resonances on W(001) and W(110)

J. Baribeau, J. Carette, 1981 .

Comparison between Rydberg surface resonances on W(001) and W(110)

J. Baribeau, J. D. Carette, 1981 .

Rydberg surface states and surface resonances

J. Baribeau, J. Carette, 1981 .

A method for comparing measured and calculated VLEED fine structures

J. Baribeau, J. Carette, J. López, 1984 .

Observation and angular behavior of Rydberg surface resonances on W(110)

J. Baribeau, J. Carette, 1981 .

New low-energy-electron-diffraction fine structure on W(110) and effect of hydrogen chemisorption

J. Baribeau, J. Carette, 1982 .

High‐resolution study of the influence of gas adsorption on LEED fine structures

J. Baribeau, J. Carette, 1983 .

VLEED analysis of W(110) data in the range 0-30 eV

J. Baribeau, J. López, J. L. Bossé, 1985 .

Surface barrier of W(110) and surface resonances

J. Baribeau, J. Carette, 1981 .

Structural and optical properties of three-dimensional Si1−xGex/Si nanostructures

D. J. Lockwood, J. Baribeau, L. Tsybeskov, 2008 .

Optical Properties of Composition-Controlled Three-Dimensional Si/Si $_{1 - x}$Ge$_{x}$ Nanostructures

D. J. Lockwood, J. Baribeau, L. Tsybeskov, 2006, IEEE Journal of Selected Topics in Quantum Electronics.

Advances in the growth and characterization of Ge quantum dots and islands

David J. Lockwood, Nelson L. Rowell, D. J. Lockwood, 2005 .

Photoluminescence of strained Si1 − x − yGexCy epilayers on Si(100)

D. J. Lockwood, J. Baribeau, N. Rowell, 2008 .

Molecular beam epitaxy synthesis of Si1-yCy and Si1-x-yGexCy alloys and Ge islands using an electron cyclotron resonance argon/methane plasma

S. Moisa, David J. Lockwood, G. I. Sproule, 2002 .

Si1−x−yGexCy alloy growth by electron cyclotron resonance plasma-assisted Si molecular beam epitaxy

David J. Lockwood, D. J. Lockwood, S. J. Rolfe, 2002 .

Channeling studies of implantation damage in SiGe superlattices and SiGe alloys

I. V. Mitchell, J. Baribeau, J. McCaffrey, 1992 .

Selective amorphization of ion‐bombarded SiGe strained‐layer superlattices

I. V. Mitchell, J. Baribeau, J. McCaffrey, 1991 .

Density of amorphous SixGe1−x alloys prepared by high-energy ion implantation

J. Baribeau, S. Roorda, Khalid Laaziri, 1995 .

Deactivation and diffusion of boron in ion-implanted silicon studied by secondary electron imaging

I. V. Mitchell, T. W. Simpson, J. Baribeau, 1999 .

Molecular Beam Epitaxy Growth of Ge on (100) Si

D. C. Houghton, J. Baribeau, J. McCaffrey, 1989 .

Optical properties of Stranski–Krastanov grown three-dimensional Si/Si1−xGex nanostructures

D. J. Lockwood, J. Baribeau, L. Tsybeskov, 2005 .

SPECTROSCOPIC ELLIPSOMETRY STUDY ON E2 PEAK SPLITTING OF SI-GE SHORT PERIOD SUPERLATTICES

M. Klein, E. Yoon, K. Whang, 1997 .

X‐ray double‐crystal characterization of molecular beam epitaxially grown Si/Si1−xGex strained‐layer superlattices

J. Baribeau, 1988 .

Folded acoustic and confined optical phonons in a (Si 15 Ge 4 ) 50 atomic-layer superlattice

D. J. Lockwood, J. Baribeau, R. Syme, 1999 .

Low angle x‐ray reflection study of ultrathin Ge films on (100) Si

J. Baribeau, J.-M. Baribeau, 1990 .

Inelastic light scattering spectroscopy in Si/SiGe nanostructures: Strain, chemical composition and thermal properties

D. J. Lockwood, J. Baribeau, L. Tsybeskov, 2016 .

Analysis of Raman Spectra of GeSi Ultrathin Superlattices and Epilayers

D. J. Lockwood, J. Baribeau, M. Dharma-wardana, 1991 .

Optical and structural characterization of nc-Si/a-SiO2 superlattices

Philippe M. Fauchet, David J. Lockwood, Karl D. Hirschman, 1998, Other Conferences.

Interfacial Studies in Semiconductor Heterostructures by X-Ray Diffraction Techniques

J. Baribeau, R. Headrick, P. Maigné, 2021 .

Effect of substrate misorientation on x‐ray rocking curves from InGaAs relaxed epitaxial layers

C. Desruisseaux, J. Baribeau, D. Coulas, 1994 .

Optical Properties of Multiple, Delta-doped Si:B/Si Layers

D. J. Lockwood, J. Baribeau, L. Tsybeskov, 2006 .

Sulphur diffusion at the Si/GaAs(110) interface

J. Baribeau, W. Lau, L. Huang, 1996 .

Determination of the depth distribution of carriers in silicon molecular beam epitaxially grown material by electrochemical capacitance-voltage measurements

J. Baribeau, D. Houghton, J. Jackman, 1990 .

Characterization of MBE grown Si/GexSi1−x strained layer superlattices

D. J. Lockwood, M. Denhoff, J. Baribeau, 1987 .

Atomic Hydrogen Assisted Growth of Si-Ge Heterostructures on (001) Si

D. J. Lockwood, J. Baribeau, H. J. Labbé, 1996 .

Epitaxy of Si-Ge heterostructures by Si MBE

D. J. Lockwood, J. Baribeau, D. Houghton, 1989 .

Raman Scattering from Ultrathin Multilayer Structures

D. J. Lockwood, J. Baribeau, M. Dharma-wardana, 1988, Nonlinear Optical Properties of Materials.

SI/GE/S MULTILAYER PASSIVATION OF GAAS(100) FOR METAL-INSULATOR-SEMICONDUCTOR CAPACITORS

Z. Lu, J. Baribeau, L. Huang, 1994 .

Low-temperature Si growth on Si (001): Impurity incorporation and limiting thickness for epitaxy

David J. Lockwood, Li-Lin Tay, G. I. Sproule, 2004 .

Visible light emitting SiSiO2 superlattices

David J. Lockwood, D. J. Lockwood, J. Baribeau, 1996 .

X‐ray and Raman scattering characterization of Ge/Si buried layers

D. J. Lockwood, M. Bedzyk, J. Baribeau, 1993 .

Heteroepitaxy of InSb on silicon by metalorganic magnetron sputtering

W. T. Moore, J. Baribeau, T. S. Rao, 1988 .

Probing the composition of Ge dots and Si∕Si1−xGex island superlattices

David J. Lockwood, D. J. Lockwood, J. Baribeau, 2006 .

Ultrafast carrier dynamics and the role of grain boundaries in polycrystalline silicon thin films grown by molecular beam epitaxy

D. J. Lockwood, J. Baribeau, F. Hegmann, 2016 .

Strain contrast of GaNyAs1−y (y = 0.029 and 0.045) epitaxial layers on (100) GaAs substrates in annular dark field images

J. Baribeau, J. Gupta, M. Robertson, 2008 .

High depth resolution Rutherford scattering using forward angles

I. V. Mitchell, T. W. Simpson, J. Baribeau, 1995 .

Substrate and capping layer effects on the phonon spectrum of ultrathin superlattices

D. J. Lockwood, J. Baribeau, M. Dharma-wardana, 1988 .

Composition and strain contrast of Si1-xGex (x=0.20) and Si1-yCy (y≤0.015) epitaxial strained films on (100) Si in annular dark field images

J. Baribeau, X. Wu, 2009 .

Interdiffusion and strain relaxation in (SimGen)p superlattices

J. Baribeau, R. Pascual, J.-M. Baribeau, 1990 .

Photoluminescence dynamics and Auger fountain in three-dimensional Si/SiGe multilayer nanostructures

D. J. Lockwood, T. Kamins, A. Bratkovsky, 2009 .

Disorder and defect formation mechanisms in molecular-beam-epitaxy grown silicon epilayers

D. J. Lockwood, J. Baribeau, G. Fanchini, 2013 .

Polarized Raman scattering and localized embedded strain in self-organized Si/Ge nanostructures

Haim Grebel, R. Stanley Williams, David J. Lockwood, 2003 .

Self-assembled SiGe dots

David J. Lockwood, Nelson L. Rowell, Jean-Marc Baribeau, 2005, SPIE OPTO.

Progress in the Growth and Characterization of Ge Quantum Dots and Islands

D. J. Lockwood, J. Baribeau, N. Rowell, 2004 .

Ordering in Si1−xGex crystals

Krishna Rajan, David J. Lockwood, E. W. Fenton, 1987 .

“Column-By-Column” Compositional Mapping At Semiconductor Interfaces Using Z-Contrast Stem

S. Pennycook, J. Baribeau, D. Jesson, 1990 .

Mechanisms of photocurrent generation in SiGe/Si HIP infrared photodetectors

R. Turan, J. Baribeau, Hui Chun Liu, 2004 .

Ion channeling analysis of MBE grown Si1−xGex/Si strained layer superlattices

W. Chu, J. Baribeau, G. S. Sandhu, 1988 .

Physical characterization of ultrathin anodic silicon oxide films

J. Bardwell, J. Baribeau, K. B. Clark, 1994 .

Thin-film optical function acquisition from experimental measurements of the reflectance and transmittance spectra: a case study

D. J. Lockwood, M. Nöel, J. Zwinkels, 2021, Journal of Materials Science: Materials in Electronics.

Influence of the growth temperature on the spectral dependence of the optical functions associated with thin silicon films grown by ultra-high-vacuum evaporation on optical quality fused quartz substrates

D. J. Lockwood, M. Nöel, J. Zwinkels, 2020, Journal of Materials Science: Materials in Electronics.

Heteroepitaxy of Ge on (100) Si substrates

D. C. Houghton, M. W. Denhoff, M. Denhoff, 1987 .

The Kinetics of Si 1-x Ge x /Si Relaxation using Large Area Dislocation Imaging Techniques

J. Baribeau, D. Houghton, P. Timbrell, 1989 .

Growth and characterization of SiGe atomic layer superlattices

D. J. Lockwood, J. Baribeau, J. McCaffrey, 1989 .

Quantification of strain through linear dichroism in the Si 1s edge X-ray absorption spectra of strained Si1−xGex thin films

J. Woicik, Yongfeng Hu, A. Hitchcock, 2013 .

Studies of oxide desorption from GaAs substrates via Ga2O3 to Ga2O conversion by exposure to Ga flux

Z. Wasilewski, J. Baribeau, G. Sproule, 2004 .

Interpretation of Raman spectra of Ge/Si ultrathin superlattices.

D. J. Lockwood, J. Baribeau, M. Dharma-wardana, 1990, Physical review. B, Condensed matter.

Application of x‐ray reflectometry in study of nonideal Si/Si1−x‐Gex superlattices

J. Baribeau, 1992 .

Nature and evolution of interfaces in Si/Si1-xGex superlattices

D. J. Lockwood, J. Baribeau, R. Headrick, 1995 .

Direct imaging of surface cusp evolution during strained-layer epitaxy and implications for strain relaxation.

Pennycook, S. Pennycook, Baribeau, 1993, Physical review letters.

Raman scattering involving umklapp processes in Si/GexSi1-x superlattices.

D. J. Lockwood, Lockwood, Baribeau, 1986, Physical review. B, Condensed matter.

X-ray and Raman scattering characterization of GelSi buried layers

D. J. Lockwood, J. Baribeau, R. Headrick, 1999 .

Resonant tunneling in partially disordered silicon nanostructures

D. J. Lockwood, Y. Niquet, P. Fauchet, 2001 .

Interface Quality and Interdiffusion in Si-Ge Heterostructures

D. J. Lockwood, J. Baribeau, M. Dharma-wardana, 1993 .

Ge, GaAs and InSb Heteroepitaxy on (100) Si

G. Weatherly, J. Baribeau, T. S. Rao, 1989 .

Thermal stability of the

Lockwood, T. Tyliszczak, Baribeau, 1992, Physical review. B, Condensed matter.

Optical properties of pseudomorphic Si/sub 1-x/Ge/sub x/ for Si-based waveguides at the /spl lambda/=1300-nm and 1550-nm telecommunications wavelength bands

Andre Delage, Siegfried Janz, Dan-Xia Xu, 1998 .

Investigation of interdiffusion in (SimGen)p superlattices and Gen buried layers by Raman and X-ray techniques

D. J. Lockwood, J. Baribeau, H. J. Labbé, 1992 .

Fabrication and Structural and Optical Properties of Amorphous Si/SiO 2 Superlattices on (100) Si

D. J. Lockwood, Z. Lu, J. Baribeau, 1995 .

X-ray Study of Interdiffusion and Strain Relaxation in Annealed (SimGen)p Atomic Layer Superlattices

J. Baribeau, R. Pascual, S. Saimoto, 1990 .

Interplay between evolving surface morphology, atomic-scale growth modes, and ordering during SixGe1-x epitaxy.

Budai, Pennycook, Baribeau, 1993, Physical review letters.

Quantum confined luminescence in Si/SiO2 superlattices.

D. J. Lockwood, Lockwood, Lu, 1996, Physical review letters.

A re-examination of thin-film silicon’s Raman spectrum

J. Baribeau, Stephen K. O'Leary, Sin Hang Cheung, 2024, Journal of Materials Science: Materials in Electronics.

X-ray scattering investigation of the interfaces in Si/Si1-xGex superlattices on Si(001) grown by MBE and UHV-CVD

H. Lafontaine, J. Baribeau, 1998 .

Organic monolayers detected by single reflection attenuated total reflection infrared spectroscopy

D. J. Lockwood, R. Boukherroub, L. Tay, 2006 .

Infrared Spectroscopic Characterization of Functional Monolayers on Silicon

D. J. Lockwood, R. Boukherroub, L. Tay, 2005 .