A. Hoffmann

M. R. Wagner, A. Cornet, J. Morante, 2010, 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference (CLEO EUROPE/EQEC).

Bound excitons in ZnO: Structural defect complexes versus shallow impurity centers

M. R. Wagner, B. Meyer, J. Reparaz, 2011 .

Nitrogen doping in bulk and epitaxial ZnO

J. Sann, M. Strassburg, B. Meyer, 2004 .

Raman and photoluminescence properties of ZnO nanowires grown by a catalyst‐free vapor‐transport process using ZnO nanoparticle seeds

Paulina R. Martínez-Alanis, J. Rubio-García, F. Güell, 2016 .

Spatially controlled growth of highly crystalline ZnO nanowires by an inkjet-printing catalyst-free method

M. R. Wagner, Paulina R. Martínez-Alanis, F. Güell, 2016 .

On the composition dependence of ZnO1-xSx

A. Polity, B. Meyer, A. Hoffmann, 2004 .

Resonant Raman scattering at exciton intermediate states in ZnO

M. R. Wagner, C. Thomsen, A. Hoffmann, 2007 .

Nature of red luminescence in oxygen treated hydrothermally grown zinc oxide nanorods

S. Pornsuwan, A. Hoffmann, M. Phillips, 2015 .

Entropy‐Driven Effects in Self‐Organized Formation of Quantum Dots

I. P. Soshnikov, N. Ledentsov, V. Ustinov, 2001 .

Intrinsic optical confinement and lasing in InAs–AlGaAs submonolayer superlattices

A. R. Kovsh, I. Krestnikov, N. Ledentsov, 1999 .

Optical properties of GaN

A. Hoffmann, 1997 .

Effect of V/III molar ratio on the structural and optical properties of InN epilayers grown by HPCVD

A. G. Unil Perera, Ian T. Ferguson, M. K. I. Senevirathna, 2012, Other Conferences.

Carrier dynamics in InAs/GaAs submonolayer stacks coupled to Stranski-Krastanov quantum dots

A. Strittmatter, U. Woggon, A. Hoffmann, 2013 .

Polariton effects in the dielectric function of ZnO excitons obtained by ellipsometry

M. R. Wagner, C. Thomsen, C. Cobet, 2010 .

Γ 7 valence band symmetry related hole fine splitting of bound excitons in ZnO observed in magneto-optical studies

M. R. Wagner, K. Thonke, B. Meyer, 2009 .

Gain mechanisms in field‐free InGaN layers grown on sapphire and bulk GaN substrate

A. Hoffmann, R. Czernecki, M. Leszczynski, 2007 .

Direct evidence of single quantum dot emission from GaN islands formed at threading dislocations using nanoscale cathodoluminescence: A source of single photons in the ultraviolet

A. Strittmatter, J. Bläsing, A. Hoffmann, 2015 .

Temperature and pressure dependence of Mg local modes in GaN

C. Thomsen, A. Hoffmann, A. Kaschner, 2001 .

Quasi-phase-matched second harmonic generation of UV light using AlN waveguides

A. Hoffmann, Z. Sitar, M. Zgonik, 2019, Applied Physics Letters.

Properties of InN layers grown by High Pressure CVD

I. Ferguson, V. Woods, N. Dietz, 2006 .

Optical and structural microanalysis of GaN grown on SiN submonolayers

A. Hoffmann, A. Dadgar, A. Krost, 2006 .

Crystalline and Optical Properties of ELO GaN by HVPE Using Tungsten Mask

K. Hiramatsu, A. Hoffmann, H. Miyake, 2000 .

Room-temperature blue-emitting high-beta gallium nitride nanobeam cavity lasers

S. Reitzenstein, J. Carlin, N. Grandjean, 2017 .

Thresholdless Lasing of Nitride Nanobeam Cavities

S. Reitzenstein, J. Carlin, N. Grandjean, 2016 .

Quantum dot origin of luminescence in InGaN-GaN structures

I. Krestnikov, N. Ledentsov, Yu. G. Musikhin, 2002 .

Heteroepitaxy of ZnO on GaN templates

J. Bläsing, B. Meyer, M. Heuken, 2002 .

Signature of the two-dimensional phonon dispersion in graphene probed by double-resonant Raman scattering

J. Maultzsch, M. Lazzeri, F. Mauri, 2013 .

Zn interstitial related donors in ammonia-treated ZnO powders

J. Sann, C. Thomsen, M. Lerch, 2007 .

Phonon pressure coefficients and deformation potentials of wurtzite AlN determined by uniaxial pressure-dependent Raman measurements

M. R. Wagner, M. Ford, J. Reparaz, 2014 .

Clebsch–Gordan coefficients for scattering tensors in ZnO and other wurtzite semiconductors

M. R. Wagner, J. Malherbe, A. Hoffmann, 2010 .

Exciton-phonon interactions and exciton pure dephasing in lens-shaped quantum dots

I. Krestnikov, G. Slepyan, S. Maksimenko, 2003 .

Exciton-phonon interactions and exciton dephasing in semiconductor quantum-well heterostructures

I. Krestnikov, G. Slepyan, S. Maksimenko, 2003 .

Phonon Interaction in InGaAs/GaAs Quantum Dots

A. Strittmatter, A. Hoffmann, S. Werner, 2007 .

Shape‐Dependent Exciton Dynamics in InGaAs/GaAs Quantum Dots

A. Schliwa, D. Bimberg, R. Heitz, 2002 .

Shielding electrostatic fields in polar semiconductor nanostructures

A. Hoffmann, G. Callsen, S. Westerkamp, 2016, 1602.06745.

Tuning of the Quantum-Confined Stark Effect in Wurtzite $[000\bar{1}]$ Group-III-Nitride Nanostructures by the Internal-Field-Guarded-Active-Region Design

Technische Universitat Berlin, M. R. Wagner, Bremen, 2017, 1707.06882.

Nitrogen incorporation in homoepitaxial ZnO CVD epilayers

M. R. Wagner, B. Meyer, A. Hoffmann, 2009 .

Exciton Energy Structure in Wurtzite GaN

B. Meyer, A. Hoffmann, M. Rosen, 1999 .

Microscopic theory of quantum dot interactions with quantum light: local field effect

G. Slepyan, S. Maksimenko, A. Hoffmann, 2007, 0706.0267.

Recombination dynamics in ZnO nanowires: Surfaces states versus mode quality factor

M. R. Wagner, F. Güell, J. Morante, 2010 .

Identification of bound exciton complexes in ZnO

I. Krestnikov, M. Strassburg, B. Meyer, 2004 .

Decay dynamics of neutral and charged excitonic complexes in single InAs∕GaAs quantum dots

D. Bimberg, A. Hoffmann, S. Rodt, 2008, 0802.1010.

Desorption induced GaN quantum dots on (0001) AlN by MOVPE

M. Kneissl, A. Strittmatter, A. Hoffmann, 2015 .

Large internal dipole moment in InGaN/GaN quantum dots

C. Kindel, A. Strittmatter, D. Bimberg, 2010 .

GaN/AlN quantum dots for single qubit emitters

M. Winkelnkemper, D. Bimberg, A. Hoffmann, 2008, 0807.5024.

Polarized emission lines from single InGaN/GaN quantum dots: Role of the valence-band structure of wurtzite Group-III nitrides

A. Strittmatter, M. Winkelnkemper, A. Schliwa, 2007, 0711.3381.

Polarized emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots

A. Strittmatter, M. Winkelnkemper, A. Schliwa, 2007, 0705.3595.

Lateral positioning of InGaAs quantum dots using a buried stressor

A. Strittmatter, A. Schliwa, D. Bimberg, 2012 .

Origin of carrier localization in AlGaN-based quantum well structures and implications for efficiency droop

A. Gomez-Iglesias, H. Lugauer, A. Hoffmann, 2020 .

Multi-excitonic complexes in single InGaN quantum dots

A. Strittmatter, D. Bimberg, A. Hoffmann, 2004, cond-mat/0610425.

Development of Dual MQW Region LEDs for General Illumination

I. Ferguson, M. Strassburg, N. Dietz, 2004 .

Effects of strain on the valence band structure and exciton-polariton energies in ZnO

M. R. Wagner, F. Bechstedt, A. Schleife, 2013, 1312.0529.

Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface

M. Razeghi, D. Look, A. Hoffmann, 2017, Scientific Reports.

Identification of a donor-related recombination channel in ZnO thin films

M. R. Wagner, C. Dietrich, M. Grundmann, 2010 .

EPR identification of intrinsic and transition metal-related defects in ZnGeP2 and other II-IV-V2 compounds

A. Hoffmann, W. Gehlhoff, 2009 .

Site inequivalence for Mn2+ substitution on Zn sites in ZnGeP2 and ZnSiP2

A. Hoffmann, W. Gehlhoff, V. Voevodin, 2005 .

Fe in III–V and II–VI semiconductors

A. Hoffmann, M. Phillips, E. Malguth, 2008 .

Spectral Identification of Impurities and Native Defects in ZnO

B. Meyer, A. Hoffmann, D. M. Hofmann, 2011 .

Structure and energy level of native defects in as-grown and electron-irradiated zinc germanium diphosphide studied by EPR and photo-EPR

N. Dietz, A. Hoffmann, W. Gehlhoff, 2003 .

Energy levels of native defects in zinc germanium diphosphide

N. Dietz, A. Hoffmann, R. Pereira, 2001 .

Bound‐exciton‐related fine structure in charge transfer spectra of InP:Fe detected by calorimetric absorption spectroscopy

D. Bimberg, A. Hoffmann, H. Schulz, 1987 .

Elementary excitations in Si, Ge, and diamond time reversal affected

M. R. Wagner, J. Malherbe, A. Hoffmann, 2008 .

Band-Gap Engineering of Zinc Oxide Colloids via Lattice Substitution with Sulfur Leading to Materials with Advanced Properties for Optical Applications Like Full Inorganic UV Protection

M. R. Wagner, M. Luka, S. Polarz, 2012 .

Zinc Oxide: From Fundamental Properties Towards Novel Applications

Andreas Waag, Bruno K. Meyer, A. Waag, 2010 .

Point Defect‐Induced UV‐C Absorption in Aluminum Nitride Epitaxial Layers Grown on Sapphire Substrates by Metal‐Organic Chemical Vapor Deposition

A. Waag, H. Lugauer, A. Hoffmann, 2020, physica status solidi (b).

Point-Defect Nature of the Ultraviolet Absorption Band in AlN

P. Reddy, A. Hoffmann, Z. Sitar, 2018 .

The growth and optical properties of large, high-quality AlN single crystals

M. Strassburg, N. Dietz, A. Hoffmann, 2004 .

Shape Anisotropy Influencing Functional Properties: Trigonal Prismatic ZnO Nanoparticles as an Example

M. R. Wagner, M. Lehmann, J. Reparaz, 2011 .

Bound exciton and donor–acceptor pair recombinations in ZnO

Jürgen Christen, Frank Bertram, U. Haboeck, 2004 .

Lattice dynamics in GaN and AlN probed with first- and second-order Raman spectroscopy

C. Thomsen, A. Hoffmann, U. Haboeck, 2003 .

Quantitative determination of hexagonal minority phase in cubic GaN using Raman spectroscopy

C. Thomsen, B. Meyer, A. Hoffmann, 1995 .

Martin Strassburg, Christian Thomsen, U. Haboeck, 2002 .

Dissociation of H-related defect complexes in Mg-doped GaN

M. Strassburg, E. Goldys, B. Monemar, 2004 .

Photonic properties of ZnO epilayers

U. Haboeck, S. Lautenschläger, M. R. Wagner, 2007, SPIE OPTO.

Excited-state carrier lifetime in single-walled carbon nanotubes

S. Reich, C. Thomsen, M. Strano, 2005 .

Strong electron-photon coupling in a one-dimensional quantum dot chain: Rabi waves and Rabi wave packets

F. Bass, G. Slepyan, A. Hoffmann, 2009, 0907.3191.

Bound and free excitons in ZnO. Optical selection rules in the absence and presence of time reversal symmetry

A. Hoffmann, A. G. J. Machatine, M. R. Wagner, 2009, Microelectron. J..

ZnCdSe Quantum Structures — Growth, Optical Properties and Applications

M. Strassburg, D. Bimberg, R. Heitz, 2002 .

Coexistence of planar and three-dimensional quantum dots in CdSe/ZnSe structures

D. Gerthsen, M. Strassburg, D. Bimberg, 2000 .

Investigations on the Stranski–Krastanow growth of CdSe quantum dots

D. Gerthsen, M. Strassburg, D. Bimberg, 2000 .

Three-dimensionally confined excitons and biexcitons in submonolayer-CdSe/ZnSe superlattices

I. Krestnikov, Z. Alferov, D. Gerthsen, 1999 .

Term structure of bound excitons in cubic ZnSe:Na

R. Heitz, A. Hoffmann, R. Bhargava, 1991 .

Growth and p-type doping of ZnSeTe on InP

M. Strassburg, D. Bimberg, A. Kontos, 2003 .

Lateral redistribution of excitons in CdSe'ZnSe quantum dots

M. Strassburg, R. Heitz, A. Hoffmann, 2002 .

Lasing properties of non-polar GaN quantum dots in cubic aluminum nitride microdisk cavities

Dirk Reuter, A. Pawlis, Donat Josef As, 2013 .

Electronic excitations stabilized by a degenerate electron gas in semiconductors

M. R. Wagner, F. Bechstedt, A. Hoffmann, 2016, Communications Physics.

Optical and Structural Properties of Nitride Based Nanostructures

M. R. Wagner, J. Maultzsch, H. Eisele, 2020 .

Matter coupling to strong electromagnetic fields in two-level quantum systems with broken inversion symmetry.

G. Slepyan, S. Maksimenko, A. Hoffmann, 2008, Physical review letters.

Array of tunneling-coupled quantum dots as a terahertz range quantum nanoantenna

Gregory Ya. Slepyan, Sergey A. Maksimenko, Yauhen Yerchak, 2013 .

Electronic properties of asymmetrical quantum dots dressed by laser field

G. Slepyan, S. Maksimenko, A. Hoffmann, 2012 .

Light-matter coupling in nanostructures without an inversion center

G. Slepyan, S. Maksimenko, A. Hoffmann, 2010 .

Wave propagation of Rabi oscillations in one-dimensional quantum dot chain

G. Slepyan, S. Maksimenko, A. Hoffmann, 2009 .

Lasing in Vertical Direction in Structures with InGaN Quantum Dots

I. P. Soshnikov, I. Krestnikov, N. Ledentsov, 2000 .

Vibrational dynamics in lead halide hybrid perovskites investigated by Raman spectroscopy.

M. R. Wagner, M. Kovalenko, T. Kühne, 2020, Physical chemistry chemical physics : PCCP.

Recombination dynamics of localized excitons in InGaN quantum dots

Dieter Bimberg, André Strittmatter, M. Strassburg, 2004 .

Anti-phase domains in cubic GaN

H. Maier, T. Niendorf, J. Lindner, 2011 .

Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap

M. R. Wagner, B. Galler, M. Strassburg, 2016 .

The exciton–polariton effect on the fluorescence properties of GaN on sapphire

B. Gil, A. Hoffmann, O. Briot, 1998 .

Optical Investigations of AlGaN on GaN Epitaxial Films

Isamu Akasaki, Jürgen Christen, Hiroshi Amano, 1999 .

Optical Properties of III–V Quantum Dots

A. Hoffmann, U. W. Pohl, S. Rodt, 2008 .

Exciton acoustic-phonon coupling in single GaN/AlN quantum dots

Y. Arakawa, A. Knorr, A. Schliwa, 2012 .

Resonant Raman scattering on free and bound excitons in GaN

C. Thomsen, A. Hoffmann, A. Kaschner, 2001 .

Quantum optics of a quantum dot: Local-field effects

D. Bimberg, Sergey A. Maksimenko, G. Ya. Slepyan, 2002 .

Local Field Effects in an Isolated Quantum Dot: Self-Consistent Microscopic Approach

G. Slepyan, S. Maksimenko, D. Bimberg, 2002 .

Rabi oscillations in a semiconductor quantum dot: Influence of local fields

Dieter Bimberg, Sergey A. Maksimenko, A. Magyarov, 2004 .

Ionized and neutral donor-bound excitons in ZnO

M. R. Wagner, J. Sann, B. Meyer, 2007 .

Valence Band Ordering and Magneto-Optical Properties of Free and Bound Excitons in ZnO

M. Strassburg, B. Meyer, A. Hoffmann, 2005 .

Auger recombination in AlGaN quantum wells for UV light-emitting diodes

M. R. Wagner, M. Kneissl, H. Lugauer, 2018, Applied Physics Letters.

Quantum island formation in CdS/ZnS heterostructures grown by MOVPE

W. Richter, D. Gerthsen, M. Strassburg, 2000 .

Multifunctional III-nitride dilute magnetic semiconductor epilayers and nanostructures as a future platform for spintronic devices

Martin Strassburg, Nikolaus Dietz, Ali Asghar, 2005, SPIE OPTO.

Ronny Kirste, Gordon Callsen, Wolfgang Gehlhoff, 2010 .

The influence of the group V/III molar precursor ratio on the structural properties of InGaN layers grown by HPCVD

N. Dietz, A. Hoffmann, R. Atalay, 2010 .

Behind the weak excitonic emission of ZnO quantum dots: ZnO/Zn(OH)2 core-shell structure

Bruno K. Meyer, Huijuan Zhou, B. Meyer, 2002 .

Optical spectra of ZnO in the far ultraviolet: First-principles calculations and ellipsometric measurements

W. Richter, C. Cobet, N. Esser, 2010 .

Ge doped GaN with controllable high carrier concentration for plasmonic applications

J. Maria, E. Sachet, A. Hoffmann, 2013 .

Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition

Alexander Franke, Zlatko Sitar, Seiji Mita, 2016 .

Formation of GaAsN nanoinsertions in a GaN matrix by metal-organic chemical vapour deposition

I. P. Soshnikov, I. Krestnikov, N. Ledentsov, 2000 .

Arrays of Two-Dimensional Islands Formed by Submonolayer Insertions: Growth, Properties, Devices

Nikolai N. Ledentsov, Igor L. Krestnikov, D. Bimberg, 2001 .

Formation of GaAsN nanoinsertions in a GaN matrix

I. P. Soshnikov, I. Krestnikov, N. Ledentsov, 2001 .

Investigation of MOVPE-grown GaN layers doped with As atoms

N. Ledentsov, M. Maksimov, A. Hoffmann, 1999 .

Raman scattering from defects in GaN: The question of vibrational or electronic scattering mechanism

C. Thomsen, A. Hoffmann, S. Einfeldt, 1998 .

Unintentional indium incorporation into barriers of InGaN/GaN multiple quantum wells studied by photoreflectance and photoluminescence excitation spectroscopy

J. Bläsing, A. Hoffmann, A. Dadgar, 2016 .

Surface-mode lasing from stacked InGaN insertions in a GaN matrix

V. A. Semenov, I. Krestnikov, N. Ledentsov, 1999 .

Structural investigations of silicon nanostructures grown by self-organized island formation for photovoltaic applications

J. A. Töfflinger, B. Rech, L. Korte, 2012 .

Effects of annealing on optical and structural properties of zinc oxide nanocrystals

J. Maultzsch, A. Hoffmann, R. Gillen, 2015 .

Nonradiative recombination processes of Ni-impurities in CdS and ZnS

R. Heitz, A. Hoffmann, I. Broser, 1992 .

A Comparative Study of the Band-Edge Exciton Fine Structure in Zinc Blende and Wurtzite CdSe Nanocrystals

T. Aubert, M. Bayer, A. Hoffmann, 2022, Nanomaterials.

Li-doped ZnO nanorods with single-crystal quality – non-classical crystallization and self-assembly into mesoporous materials

M. R. Wagner, S. Polarz, A. Hoffmann, 2014 .

Probing local strain and composition in Ge nanowires by means of tip-enhanced Raman scattering.

M. R. Wagner, J. Maultzsch, C. Thomsen, 2013, Nanotechnology.

Laser processes in group-III nitrides

A. Hoffmann, L. Eckey, J. Holst, 1999 .

Doping-level-dependent optical properties of GaN:Mn

M. Stutzmann, M. Strassburg, E. Goldys, 2004 .

A Systematic Study on Zinc Oxide Materials Containing Group I Metals (Li, Na, K)-Synthesis from Organometallic Precursors, Characterization, and Properties

M. R. Wagner, M. Lehmann, M. Driess, 2009 .

Optical signature of Mg-doped GaN: Transfer processes

James Tweedie, Zlatko Sitar, Ronny Kirste, 2012 .

Quantum Dot Lattice as Nano-Antenna for Collective Spontaneous Emission

Jem Jos Haverkort, G. Slepyan, S. Maksimenko, 2016 .

Collective spontaneous emission in coupled quantum dots : physical mechanism of quantum nanoantenna

G. Slepyan, S. Maksimenko, A. Hoffmann, 2012 .

Enhancement of the UV emission from gold/ZnO nanorods exhibiting no green luminescence

A. Hoffmann, M. Phillips, C. Ton‐That, 2019, Optical Materials Express.

Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements

James Tweedie, Zlatko Sitar, Ronny Kirste, 2013 .

Stress analysis of selective epitaxial growth of GaN

Juergen Christen, Christian Thomsen, Frank Bertram, 1999 .

Assembly of carbon nanotubes and alkylated fullerenes: nanocarbon hybrid towards photovoltaic applications

M. R. Wagner, S. Reich, C. Thomsen, 2011 .

Phonons in sapphire Al2O3 substrate for ZnO and GaN

M. R. Wagner, J. Malherbe, A. Hoffmann, 2007 .

Estimation of free carrier concentrations in high-quality heavily doped GaN:Si micro-rods by photoluminescence and Raman spectroscopy

A. Avramescu, A. Waag, M. Strassburg, 2016, SPIE OPTO.

Suppressed Relaxation in InGaAs/GaAs Quantum Dots

D. Bimberg, R. Heitz, A. Hoffmann, 2001 .

Analysis of the exciton–LO-phonon coupling in single wurtzite GaN quantum dots

Y. Arakawa, C. Kindel, M. Arita, 2015 .

Existence of a phonon bottleneck for excitons in quantum dots

A. Schliwa, D. Bimberg, R. Heitz, 2001 .

Titanium-assisted growth of silica nanowires: from surface-matched to free-standing morphologies

M. R. Wagner, C. Thomsen, J. Reparaz, 2011, Nanotechnology.

Time-resolved micro-photoluminescence of epitaxial laterally overgrown GaN

K. Hiramatsu, A. Hoffmann, N. Sawaki, 2000 .

Electromagnetic response of 3D arrays of quantum dots

N. Ledentsov, Z. Alferov, G. Slepyan, 2000 .

Spectral diffusion in nitride quantum dots: Emission energy dependent linewidths broadening via giant built‐in dipole moments

C. Kindel, A. Schliwa, A. Hoffmann, 2014 .

Multiphoton resonant excitations and high-harmonic generation in bilayer graphene

G. F. Mkrtchian, S. Maksimenko, A. Hoffmann, 2013 .

Identification of electric dipole moments of excitonic complexes in nitride-based quantum dots

Y. Arakawa, C. Kindel, A. Schliwa, 2013 .

Low temperature growth and plasma enhanced nitrogen doping of ZnSe by metalorganic vapour phase epitaxy

M. Heuken, A. Hoffmann, A. Schneider, 1994 .

Breakdown of Far-Field Raman Selection Rules by Light-Plasmon Coupling Demonstrated by Tip-Enhanced Raman Scattering.

M. R. Wagner, J. Maultzsch, A. Hoffmann, 2017, The journal of physical chemistry letters.

A quantum optical study of thresholdless lasing features in high-β nitride nanobeam cavities

S. Reitzenstein, J. Carlin, N. Grandjean, 2018, Nature Communications.

On thresholdless lasing features in high-$\beta$ nitride nanobeam cavities: a quantum optical study

S. Reitzenstein, J. Carlin, N. Grandjean, 2016, 1603.06447.

Challenges for reliable internal quantum efficiency determination in AlGaN-based multi-quantum-well structures posed by carrier transport effects and morphology issues

H. Lugauer, A. Hoffmann, F. Nippert, 2019, Journal of Applied Physics.

Resonantly Excited Time‐Resolved Photoluminescence Study of Self‐Organized InGaAs/GaAs Quantum Dots

D. Bimberg, R. Heitz, A. Hoffmann, 2000 .

Phonon plasmon interaction in ternary group-III-nitrides

M. R. Wagner, J. Reparaz, A. Hoffmann, 2012 .

Effect of reactor pressure on the electrical and structural properties of InN epilayers grown by high-pressure chemical vapor deposition

I. Ferguson, N. Dietz, A. Perera, 2012 .

Optical properties of InN grown on templates with controlled surface polarities

M. R. Wagner, A. Strittmatter, N. Dietz, 2010 .

Reactor pressure: growth temperature relation for InN epilayers grown by high-pressure CVD

M. Jamil, R. Kirste, Z. Sitar, 2010, Optical Engineering + Applications.

ZnO based ternary transparent conductors

A. Polity, B. Meyer, A. Hoffmann, 2006 .

Origin of the broad lifetime distribution of localized excitons in InGaN/GaN quantum dots

A. Strittmatter, M. Winkelnkemper, D. Bimberg, 2008, 0807.5056.

Engineering of the radiative recombination rate in quantum dots coupled to the tilted cavity waveguide mode

S. Mikhrin, N. Ledentsov, A. Kovsh, 2006 .

Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN

James Tweedie, Zlatko Sitar, Ronny Kirste, 2011 .

On the Origin of the 4.7 eV Absorption and 2.8 eV Emission Bands in Bulk AlN Substrates

Benjamin E. Gaddy, Y. Kumagai, A. Koukitu, 2016 .

Local vibrational modes and compensation effects in Mg-doped GaN

C. Thomsen, A. Hoffmann, A. Kaschner, 2003 .

Investigation of molecular co-doping for low ionization energy p-type centers in (Ga,Al)N

I. Ferguson, M. Strassburg, N. Dietz, 2003 .

Stress analysis of AlxGa1-xN films with microcracks

C. Thomsen, A. Hoffmann, S. Einfeldt, 2003 .

Acoustic and optical phonon scattering in a single In(Ga)As quantum dot

A. Knorr, A. Schliwa, D. Bimberg, 2011 .

A Small Signal Amplifier Based on Ionic Liquid Gated Black Phosphorous Field Effect Transistor

Wei Zhang, M. Demarteau, A. Hoffmann, 2015, IEEE Electron Device Letters.

Magneto-optical properties of bound excitons in ZnO

M. Strassburg, B. Meyer, A. Hoffmann, 2003, cond-mat/0308315.

Magnetic and structural properties of transition metal doped zinc‐oxide nanostructures

T. Trindade, M. Grundmann, N. Sobolev, 2009 .

Optical signatures of nitrogen acceptors in ZnO

M. R. Wagner, M. Koch, B. Meyer, 2012 .

Asymmetry in the excitonic recombinations and impurity incorporation of the two polar faces of homoepitaxially grown ZnO films

M. R. Wagner, J. Sann, B. Meyer, 2008 .

Optical micro-characterization of group-III-nitrides: correlation of structural, electronic and optical properties

C. Thomsen, A. Hoffmann, J. Christen, 2003 .

Correlative Study of Enhanced Excitonic Emission in ZnO Coated with Al Nanoparticles using Electron and Laser Excitation

A. Hoffmann, M. Phillips, C. Ton‐That, 2019, Scientific Reports.

Growth of High Quality AlN Single Crystals and Their Optical Properties

M. Strassburg, N. Dietz, A. Hoffmann, 2005 .

Optical and structural properties of homoepitaxial ZnO

Axel Hoffmann, T. Bartel, Markus R. Wagner, 2008, SPIE OPTO.

Mixed states in Rabi waves and quantum nanoantennas

F. Bass, G. Slepyan, S. Maksimenko, 2012 .

Optical Properties of the Nitrogen Acceptor in Epitaxial ZnO

M. Strassburg, B. Meyer, A. Hoffmann, 2002 .

Optical and Structural Properties of Quantum Dots in Wide‐Bandgap Semiconductors

I. Krestnikov, N. Ledentsov, M. Strassburg, 2001 .

Revealing the origin of high‐energy Raman local mode in nitrogen doped ZnO nanowires

J. Maultzsch, A. Hoffmann, R. Gillen, 2016 .

Time‐Resolved Studies of InGaN/GaN Quantum Dots

I. Krestnikov, N. Ledentsov, Yu. G. Musikhin, 2002 .

Evidence for Phase Separation in InGaN by Resonant Raman Scattering

C. Thomsen, A. Hoffmann, S. Einfeldt, 2000 .

Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots

I. P. Soshnikov, I. Krestnikov, N. Ledentsov, 2000 .

Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces

Nikolai N. Ledentsov, Mikhail V. Maximov, Axel Hoffmann, 2014, Photonics West - Optoelectronic Materials and Devices.

Control of the electronic properties of CdSe submonolayer superlattices via vertical correlation of quantum dots

Dieter Bimberg, N. N. Ledentsov, Andreas Rosenauer, 1999 .

Decay dynamics of excitonic polarons in InAs/GaAs quantum dots

M. R. Wagner, C. Thomsen, N. Ledentsov, 2011 .

Polarization-induced confinement of continuous hole-states in highly pumped, industrial-grade, green InGaN quantum wells

M. Albrecht, I. Pietzonka, M. Strassburg, 2016 .

Recombination dynamics in InxGa1−xN quantum wells—Contribution of excited subband recombination to carrier leakage

A. Hoffmann, F. Nippert, T. Schulz, 2014 .

The origin of optical gain in cubic InGaN grown by molecular beam epitaxy

Klaus Lischka, Donat Josef As, Jürgen Christen, 2000 .

PHOTOLUMINESCENCE INVESTIGATIONS OF ALGAN ON GAN EPITAXIAL FILMS

H. Amano, I. Akasaki, B. Meyer, 1999 .

Optical emission of GaN/AlN quantum-wires - the role of charge transfer from a nanowire template.

M. R. Wagner, M. Eickhoff, J. Arbiol, 2018, Nanoscale.

Intrinsic electronic properties of high-quality wurtzite InN

H. Eisele, J. Speck, S. Gwo, 2016 .

Properties of InN grown by High-Pressure CVD

I. Ferguson, M. Strassburg, V. Woods, 2005 .

Influence of the Growth Substrate on the Internal Quantum Efficiency of AlGaN/AlN Multiple Quantum Wells Governed by Carrier Localization

H. Lugauer, A. Hoffmann, G. Jacopin, 2020, physica status solidi (b).

Nanoscale imaging of InN segregation and polymorphism in single vertically aligned InGaN/GaN multi quantum well nanorods by tip-enhanced Raman scattering.

M. R. Wagner, J. Maultzsch, M. Strassburg, 2013, Nano letters.

Molecular Precursor Route to a Metastable Form of Zinc Oxide

M. R. Wagner, J. Reparaz, S. Polarz, 2010 .

Optical Properties of Mn-doped GaN

M. Stutzmann, M. Strassburg, E. Goldys, 2003 .

Site‐controlled quantum dot growth on buried oxide stressor layers

A. Strittmatter, A. Schliwa, D. Bimberg, 2012 .

Mechanisms of Optical Gain in Cubic GaN and Ingan

A. Hoffmann, D. Schikora, D. As, 1998 .

Structural and optical investigation of non-polar (1-100) GaN grown by the ammonothermal method

M. R. Wagner, R. Kucharski, R. Fornari, 2013, Journal of Applied Physics.

The influence of the Al-content on the optical gain in AlGaN heterostructures

O. Ambacher, M. Stutzmann, A. Hoffmann, 1998 .

Mn charge states in GaMnN as a function of Mn concentration and co-doping

I. Ferguson, A. Hoffmann, W. Gehlhoff, 2007 .

Mn- and Fe- doped GaN for spintronic applications

I. Ferguson, A. Hoffmann, M. Kane, 2007 .