Bowei Xu

发表

Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots

Z. G. Wang, Huiyun Liu, R. Jia, 2002 .

LASERS, OPTICS, AND OPTOELECTRONICS 2865 Single-mode solid-state single photon source based on isolated quantum dots in pillar microcavities

Costas Fotakis, Eric Moreau, C. Kalpouzos, 2001 .

Anomalous Temperature Dependence of Photoluminescence in InAs/InAlGaAs/InP Quantum Wire and Dot Hybrid Nanostructures

Xinrong Yang, Xiaonan Shen, Bowei Xu, 2011 .

Experimental and theoretical study for InAs quantum dashes-in-a-step-well structure on (001)-oriented InP substrate

Bowei Xu, Zhan-guo Wang, J. Kong, 2011 .

Metamorphosis of self-organized quantum dots into quantum wires

Bowei Xu, Ju Wu, Zhan-guo Wang, 1998 .

The Structural and Photoluminescence Character of InAs Quantum Dots Grown on a Combined InAlAs and GaAs Strained Buffer Layer

C. X. Cui, C. Zhang, Bowei Xu, 2005 .

Thermal carrier processes in bimodal-sized quantum dots with different lateral coupling strength

Y. H. Chen, Z. G. Wang, T. Li, 2011 .

Effects of ultra-low Al alloying In(Al)As layer on the formation and evolution of InAs/GaAs quantum dots

Z. G. Wang, Bowei Xu, Tao E. Li, 2011 .

Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment

Z. G. Wang, Bowei Xu, Tao E. Li, 2011 .

Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density

Y. H. Chen, Z. G. Wang, C. Jia, 2010 .

Optical identification of electronic state levels of an asymmetric InAs/InGaAs/GaAs dot-in-well structure

Bowei Xu, Xiaolong Zhou, Yonghai Chen, 2011, Nanoscale research letters.

Substrate dependence of InGaAs quantum dots grown by molecular beam epitaxy

Q. Gong, Wei Zhou, Huaizhe Xu, 2001 .

Polarization dependence of absorption in strongly vertically coupled InAs/GaAs quantum dots for two-color far-infrared photodetector

Bowei Xu, Zhan-guo Wang, L. Shi, 2008 .

Fabrication of high quality two-dimensional photonic crystal mask layer patterns

R. Jia, Yin-Wei Peng, Bowei Xu, 2009 .

Influence of In0.2Ga0.8As strain-reducing layer on the active region of quantum dot superluminescent diodes

Z. G. Wang, Bowei Xu, P. Jin, 2002 .

Ordered InAs quantum dots in InAlAs matrix on (001) InP substrates grown by molecular beam epitaxy

Bowei Xu, Ju Wu, Zhan-guo Wang, 1998 .

In composition dependence of lateral ordering in InGaAs quantum dots grown on (311)B GaAs substrates

Q. Gong, Wei Zhou, Huaizhe Xu, 1999 .

Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(311)B surfaces

W. Zhou, Huaizhe Xu, Bowei Xu, 1999 .

Protection effect of a SiO2 layer in Al0.85Ga 0.15As wet oxidation

Bowei Xu, Zhan-guo Wang, X. Ye, 2012 .

Asymmetry in the Vertically Aligned Growth Induced InAs Islands in GaAs

Q. Gong, Bowei Xu, Ju Wu, 1998 .

Size evolution and optical properties of self-assembled InAs quantum dots on different matrix

Z. G. Wang, Junhui He, S. Qu, 2003 .

Temperature dependent photoluminescence of an In(Ga)As/GaAs quantum dot system with different areal density

Y. H. Chen, Z. G. Wang, C. Jia, 2010 .

Self-assembled InAs/GaAs quantum dots and quantum dot laser

Bowei Xu, Zhan-guo Wang, F. Liu, 2000 .

Observation of photo darkening in self assembled InGaAs/GaAs quantum dots

Bowei Xu, Zhan-guo Wang, X. Ye, 2013 .

Photoluminescence studies on very high‐density quasi‐two‐dimensional electron gases in pseudomorphic modulation‐doped quantum wells

A. Song, Wanhua Zheng, Bowei Xu, 1995 .

Photoluminescence study of InAlAs quantum dots grown on differently oriented surfaces

Q. Gong, Wei Zhou, Huaizhe Xu, 2000 .

Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy

Z. G. Wang, Weiya Zhou, Q. Gong, 1998 .

Red Luminesecnce from Self-Assembled InAlAs/AlGaAs Quantum Dots with Bimodal Size Distribution

Q. Gong, Wei Zhou, Huaizhe Xu, 1999 .

Structural and optical characteristics of self-organized InAs quantum dots grown on GaAs (3 1 1)A substrates

Q. Gong, Wei Zhou, Bowei Xu, 1999 .

Room temperature 1.55 μm emission from InAs quantum dots grown on (0 0 1)InP substrate by molecular beam epitaxy

Z. G. Wang, Bowei Xu, X. Ye, 2000 .

Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy

Wei Zhou, Bowei Xu, Zhan-guo Wang, 2000 .

Structure and photoluminescence of InGaAs self-assembled quantum dots grown on InP(001)

Q. Gong, Bowei Xu, Ju Wu, 1999 .

Growth and characterization of InGaAs/InAlAs quantum cascade lasers

Bowei Xu, Zhan-guo Wang, Quande Zhang, 2001 .

The effect of In content on high-density InxGa1−xAs quantum dots

Z. G. Wang, Baojian Xu, Kui Li, 2005 .

Evolution of wetting layers in InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy

Bowei Xu, P. Jin, Zhan-guo Wang, 2008, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology.

Scanning electron microscopy observation of in-device InAs/AlAs quantum dots by selective etching of capping layers

Dayong Zhou, Jie J. Sun, Bowei Xu, 2007 .

Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry

Bowei Xu, Zhan-guo Wang, X. Ye, 2002 .

LATERAL INTERSUBBAND PHOTOCURRENT STUDY ON InAs/InAlAs/InP SELF-ASSEMBLED NANOSTRUCTURES

Y. H. Chen, Z. G. Wang, X. Q. Huang, 2006 .

Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness

Y. H. Chen, Bowei Xu, P. Jin, 2006 .

Influence of rapid thermal annealing on InAs/InAlAs/InP quantum wires with different InAs deposited thickness

Y. H. Chen, Bowei Xu, X. Ye, 2005 .

Spin Injection and Relaxation in p -Doped (In,Ga)As/GaAs Quantum-Dot Spin Light-Emitting Diodes at Zero Magnetic Field

H. Jaffrès, J. George, Bowei Xu, 2020, Physical Review Applied.

Spin-injection and spin-relaxation in p-doped InGaAs/GaAs quantum-dot spin light emitting diode at zero magnetic field

H. Jaffrès, J. George, Bowei Xu, 2020, 2008.06407.

Spin Transport under In-plane Electric Fields with Different Orientations in Undoped InGaAs/AlGaAs Multiple Quantum Wells

Bowei Xu, Zhan-guo Wang, Laipan Zhu, 2019, Chinese Physics Letters.

Influence of dislocation stress field on distribution of quantum dots

Bowei Xu, Zhan-guo Wang, Yuanli Wang, 2006 .

Development of cross-hatch grid morphology and its effect on ordering growth of quantum dots

Bowei Xu, P. Jin, F. Zhao, 2005 .

Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots

Huiyun Liu, Bowei Xu, Junxia Wu, 2000 .

Effect of layer thickness of immiscible alloy In0.52Al0.48As on the morphology of InAs nanostructure grown on In0.52Al0.48As/InP(001)

Y. H. Chen, Z. G. Wang, Yuansha Chen, 2005 .

Room-temperature continuous-wave operation of InAs quantum-wire laser on InP(001) substrate

Y. H. Chen, Han-Dong Sun, Bowei Xu, 2006 .

Anomalous temperature dependence of photoluminescence peak energy in InAs/InAlAs/InP quantum dots

Y. H. Chen, Bowei Xu, P. Jin, 2006 .

Polarized Photoluminescence and Temperature-Dependent Photoluminescence Study of InAs Quantum Wires on InP (001)

Bowei Xu, P. Jin, Z.G. Wang, 2005 .

The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing

Z. G. Wang, Baojian Xu, Bowei Xu, 2003 .

Influence of strain on annealing effects of In(Ga)As quantum dots

Y. H. Chen, Bowei Xu, P. Dowd, 2002 .

Comparison of spin photocurrent in devices based on in-plane or out-of-plane magnetized CoFeB spin detectors

Bowei Xu, Zhan-guo Wang, X. Marie, 2019, Spintronics XIII.

Quantum-dot superluminescent diode: A proposal for an ultra-wide output spectrum

Wei Zhou, Qian Gong, Q. Gong, 1999 .

High-power and long-lifetime InAs/GaAs quantum-dot laser at 1080 nm

Qin Han, Huiyun Liu, Bowei Xu, 2001 .

MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting

Z. G. Wang, Baojian Xu, Lili Hu, 2006 .

808 nm high-power laser grown by MBE through the control of Be diffusion and use of superlattice

Q. Gong, Jun Zhang, Bowei Xu, 1997 .

InAs nanostructures on InP (001) substrate with the insertion of a superthin AlAs layer

Yiping Zeng, Bowei Xu, Ju Wu, 2007 .

Different growth mechanisms of bimodal InAs/GaAs QDs

Y. H. Chen, Bowei Xu, G. Zhou, 2010 .

Characterization and analysis of two-dimensional GaAs-based photonic crystal nanocavities at room temperature

Z. G. Wang, Baojian Xu, R. Jia, 2010 .

Recombination Time Mismatch and Spin Dependent Photocurrent at a Ferromagnetic-Metal-Semiconductor Tunnel Junction.

H. Jaffrès, V. Safarov, H. Drouhin, 2022, Physical review letters.

Atomic-scale understanding of high thermal stability of the Mo/CoFeB/MgO spin injector for spin-injection in remanence.

H. Jaffrès, S. Mangin, Xiufeng Han, 2018, Nanoscale.

Electrical Initialization of Electron and Nuclear Spins in a Single Quantum Dot at Zero Magnetic Field.

H. Jaffrès, S. Mangin, Xiufeng Han, 2018, Nano letters.

Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots

Bowei Xu, P. Jin, X. Ye, 2002 .

Angular Dependence of the Spin Photocurrent in a Co−Fe−B/MgO/n−i−p GaAs Quantum-Well Structure

Bowei Xu, X. Marie, P. Renucci, 2017 .

Room-temperature observation of electron resonant tunneling through InAs/AlAs quantum dots

Jie J. Sun, Bowei Xu, Zhan-guo Wang, 2006, 0712.0972.

Optical properties of InGaAs quantum dots formed on InAlAs wetting layer

Z. G. Wang, Y. F. Li, Baojian Xu, 2001 .

Structure and optical properties of upper In(Ga)As quantum dots on a different seed layer with a thin GaAs spacer layer

Z. G. Wang, Junjun He, Bowei Xu, 2003 .

InAs quantum dots in InAlAs matrix on (001)InP substrates grown by molecular beam epitaxy

Z. G. Wang, Baojian Xu, Q. Gong, 1998 .

Abnormal temperature dependent photoluminescence of excited states of InAs/GaAs quantum dots: Carrier exchange between excited states and ground states

Bowei Xu, X. Ye, Yonghai Chen, 2011 .

Electron Resonant Tunneling Through InAs ∕ GaAs Quantum Dots Embedded in a Schottky Diode with an AlAs Insertion Layer

Jie J. Sun, Bowei Xu, P. Jin, 2006, 0712.0980.

Cavity-mode calculation of L3 photonic crystal slab using the effective index perturbation method

Bowei Xu, Zhan-guo Wang, X. Ye, 2013 .

Effect of rapid thermal annealing on the luminescence of self-assembled InAs quantum dots embedded in GaAs-based photonic crystal nanocavities

Z. G. Wang, Bowei Xu, Binzong Xu, 2012 .

Ordering growth of InAs quantum dots on ultra-thin InGaAs strained layer

Z. G. Wang, Bowei Xu, Binzong Xu, 2004 .

The research progress of quantum dot lasers and photodetectors in China.

Tao Yang, Bowei Xu, Zhan-guo Wang, 2011, Journal of nanoscience and nanotechnology.

Selective growth of InAs islands on patterned GaAs (100) substrate

Y. H. Chen, C. X. Cui, Bowei Xu, 2006 .

Study of nucleation positions of InAs islands on stripe-patterned GaAs(100) substrate

Y. H. Chen, C. X. Cui, Bowei Xu, 2006 .

Effect of inter-level relaxation and cavity length on double-state lasing performance of quantum dot lasers

Y. H. Chen, Bowei Xu, Z. Wang, 2007 .

A novel line-order of InAs quantum dots on GaAs

Z. G. Wang, Baojian Xu, Bowei Xu, 2002 .

Abnormal temperature dependent photoluminescence of self-assembled InAs/GaAs surface quantum dots with high areal density

Y. H. Chen, Z. G. Wang, Bowei Xu, 2010 .

Optical identification of electronic state levels of an asymmetric InAs/InGaAs/GaAs dot-in-well structure

Bowei Xu, Xiaolong Zhou, Yonghai Chen, 2011, Nanoscale research letters.

Influence of growth conditions on self-assembled InAs nanostructures grown on (001)InP substrate by molecular beam epitaxy

Z. G. Wang, Y. F. Li, Baojian Xu, 2001 .

Anomalous temperature dependence of photoluminescence spectra from InAs/GaAs quantum dots grown by formation–dissolution–regrowth method*

Bowei Xu, Z. Wang, Yonghai Chen, 2017 .

Carrier channels of multimodal-sized quantum dots: A surface-mediated adatom migration picture

F. Ding, Bowei Xu, Yonghai Chen, 2007 .

InAs nanostructure grown with different growth rate in InAlAs matrix on InP (001) substrate

Z. G. Wang, Bowei Xu, Junxia Wu, 2004 .

Effects of interdiffusion on the luminescence of InAs/GaAs quantum dots covered by InGaAs overgrowth layer

Huiyun Liu, Bowei Xu, D. Ding, 2000 .

Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy

C. X. Cui, Bowei Xu, Junxia Wu, 2004 .

Substrate surface atomic structure influence on the growth of InAlAs quantum dots

Z. G. Wang, Baojian Xu, Huaizhe Xu, 1999 .

Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer

Y. H. Chen, Z. G. Wang, Huiyun Liu, 2001 .

Room temperature (34 degrees C) operation of strain-compensated quantum cascade lasers

Baoquan Sun, D. Jiang, Bowei Xu, 2000 .

High-performance strain-compensated InGaAs/InAlAs quantum cascade lasers

Desheng Jiang, Fengqi Liu, Baoquan Sun, 2000 .

Growth and characterization of InGaAs/InAlAs/InP high-electron-mobility transistor structures towards high channel conductivity

Q. Gong, W. Zhou, Bowei Xu, 1998 .

Temperature dependence of surface quantum dots grown under frequent growth interruption

Lili Hu, F. Ding, Jie J. Sun, 2006 .

Structure and Photoluminescence Study of InGaAs/GaAs Quantum Dots Grown via Cycled (InAs)n/(GaAs)n Monolayer Deposition

Xiaodong Wang, S. Qu, Bowei Xu, 2003 .

Interface roughness scattering in GaAs–AlGaAs modulation‐doped heterostructures

Bowei Xu, Zhan-guo Wang, Yongfa Cheng, 1994 .

Influence of Interface Roughness Scattering on Electron Mobility in GaAs-Al0.3Ga0.7 as Two Dimensional Electron Gas (2DEG) Heterostructures

Bowei Xu, Zhan-guo Wang, Yongfa Cheng, 1994 .