Y. Shimura

发表

Silicon-Based Photonic Integration Beyond the Telecommunication Wavelength Range

Gunther Roelkens, Utsav Dave, Alban Gassenq, 2014, IEEE Journal of Selected Topics in Quantum Electronics.

Synthesis of Ge-based nanosheet bundles using calcium germanides as templates in IP6 aqueous solution

Y. Shimura, V. Saxena, N. Atsumi, 2019, Japanese Journal of Applied Physics.

GeSn/Ge heterostructure short-wave infrared photodetectors on silicon.

R Loo, J Van Campenhout, R. Loo, 2012, Optics express.

Local Arrangement of Substitutional C Atoms and the Thermal Stability of Epitaxial Si:C(P) Grown by CVD

A. Hikavyy, E. Rosseel, R. Loo, 2017 .

On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films

A. Hikavyy, E. Rosseel, G. Pourtois, 2016 .

On the Evolution of Strain and Electrical Properties in As-Grown and Annealed Si: P Epitaxial Films for Source-Drain Stressor Applications

A. Hikavyy, E. Rosseel, G. Pourtois, 2018 .

Mid-IR heterogeneous silicon photonics

Chen Hu, Richard M. Osgood, Li Shen, 2013, Photonics West - Optoelectronic Materials and Devices.

Germanium-on-Silicon Mid-Infrared Arrayed Waveguide Grating Multiplexers

R. Loo, J. Van Campenhout, G. Roelkens, 2013, IEEE Photonics Technology Letters.

Germanium-on-silicon planar concave grating wavelength (de)multiplexers in the mid-infrared

R. Loo, G. Roelkens, A. Malik, 2013 .

Long-wavelength silicon photonic integrated circuits

J. B. Rodriguez, G. Mashanovich, R. Loo, 2014, 11th International Conference on Group IV Photonics (GFP).

Long-wavelength III-V/silicon photonic integrated circuits

J. B. Rodriguez, G. Mashanovich, R. Loo, 2013 .

Solid-phase crystallization of Si1−x−ySnxCy ternary alloy layers and characterization of their crystalline and optical properties

M. Kurosawa, Y. Shimura, O. Nakatsuka, 2016 .

Electrical properties of extended defects in strain relaxed GeSn

H. Bender, R. Loo, M. Heyns, 2018, Applied Physics Letters.

Formation and characterization of Ge1−x−ySixSny/Ge1−xSnx/Ge1−x−ySixSny double heterostructures with strain-controlled Ge1−x−ySixSny layers

M. Fukuda, M. Kurosawa, Y. Shimura, 2017 .

Extended X-ray absorption fine structure investigation of Sn local environment in strained and relaxed epitaxial Ge1-xSnx films

R. Loo, M. Heyns, K. Temst, 2015 .

Material Properties and Applications of Ge1-xSnx Alloys for Ge Nanoelectronics

N. Taoka, Y. Shimura, O. Nakatsuka, 2012, 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM).

Band alignment at interfaces of amorphous Al2O3 with Ge1−xSnx- and strained Ge-based channels

C. Merckling, A. Stesmans, R. Loo, 2014 .

Synthesis of Si nanowire/nanosheet complexes from CaSi2 crystals by thermal annealing under MnCl2/NH4Cl vapors

Y. Shimura, H. Tatsuoka, Yalei Huang, 2020, Japanese Journal of Applied Physics.

Fine structural and photoluminescence properties of Mg2Si nanosheet bundles rooted on Si substrates

Y. Okada, N. Ahsan, R. Tamaki, 2020, Japanese Journal of Applied Physics.

In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates

R. Loo, M. Caymax, W. Vandervorst, 2012 .

Growth of highly strain-relaxed Ge1−xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method

Y. Shimura, O. Nakatsuka, S. Takeuchi, 2008 .

Effect of ethylenediamine on morphology of 2D Co-Mo-S@NG hybrids and their enhanced electrocatalytic activity for DSSCs application

M. Navaneethan, S. Ponnusamy, C. Muthamizhchelvan, 2020 .

UV-visible and near-infrared active NaGdF4:Yb:Er/Ag/TiO2 nanocomposite for enhanced photocatalytic applications

Y. Hayakawa, Y. Shimura, M. Arivanandhan, 2016 .

Zn and Sr co-doped TiO2 mesoporous nanospheres as photoanodes in dye sensitized solar cell

M. Navaneethan, S. Ponnusamy, C. Muthamizhchelvan, 2019, Materials Chemistry and Physics.

Metal sulfide nanosheet–nitrogen-doped graphene hybrids as low-cost counter electrodes for dye-sensitized solar cells

M. Navaneethan, S. Ponnusamy, C. Muthamizhchelvan, 2019, Applied Surface Science.

Synthesis of CaF2 Nanostructures from Calcium Silicide Powders in Diluted Aqueous HF Solution

Y. Shimura, N. Atsumi, H. Tatsuoka, 2020, 5th Asia-Pacific Conference on Semiconducting Silicides and Related Materials (APAC-Silicide 2019).

Low temperature formation of Si1 − x − yGexSny-on-insulator structures by using solid-phase mixing of Ge1 − zSnz/Si-on-insulator substrates

Y. Shimura, O. Nakatsuka, S. Zaima, 2012 .

Epitaxial GeSn: impact of process conditions on material quality

R. Loo, D. Buca, J. Margetis, 2018, Semiconductor Science and Technology.

EXAFS study of local structure contributing to Sn stability in SiyGe1-y-zSnz

M. Fukuda, Y. Shimura, O. Nakatsuka, 2017 .

Enhanced active P doping by using high order Ge precursors leading to intense photoluminescence

R. Loo, D. Thourhout, S. Srinivasan, 2016 .

Insights into the C Distribution in Si:C/Si:C:P and the Annealing Behavior of Si:C Layers

A. Hikavyy, E. Rosseel, G. Pourtois, 2019, ECS Journal of Solid State Science and Technology.

Mobility Behavior of Ge1-xSnx Layers Grown on Silicon-on-Insulator Substrates

Akira Sakai, Yosuke Shimura, Shigeaki Zaima, 2010 .

Strained Ge and Ge1-xSnx Technology for Future CMOS Devices

Y. Shimura, O. Nakatsuka, S. Takeuchi, 2011 .

Control of Sn Precipitation and Strain Relaxation in Compositionally Step-Graded Ge1-xSnx Buffer Layers for Tensile-Strained Ge Layers

Y. Shimura, O. Nakatsuka, A. Sakai, 2008 .

Fabrication of ultrathin poly-crystalline SiGe-on-insulator layer for thermoelectric applications

M. Navaneethan, S. Ponnusamy, C. Goyal, 2019, Journal of Physics Communications.

Thermal conductivity and inelastic X-ray scattering measurements on SiGeSn polycrystalline alloy

A. Ogura, Y. Shimura, H. Tatsuoka, 2021 .

On the interplay between relaxation, defect formation, and atomic Sn distribution in Ge(1−x)Sn(x) unraveled with atom probe tomography

R. Loo, W. Vandervorst, F. Gencarelli, 2015 .

Effect of in situ Sb doping on crystalline and electrical characteristics of n-type Ge1−xSnx epitaxial layer

M. Kurosawa, Y. Shimura, O. Nakatsuka, 2016 .

Topological synthesis of Mg-based silicate nanosheet bundles from CaSi2 crystal powders

Y. Hayakawa, Y. Shimura, H. Tatsuoka, 2020, Japanese Journal of Applied Physics.

Design Requirements for Group-IV Laser Based on Fully Strained Ge1−xSnx Embedded in Partially Relaxed Si1−y−zGeySnz Buffer Layers

R. Loo, S. Srinivasan, Y. Shimura, 2016 .

Magnetic anomalies in Fe-doped NiO nanoparticle

L. Karmakar, Y. Shimura, A. Gandhi, 2017 .

Effect of Zn Doping in CuO Octahedral Crystals towards Structural, Optical, and Gas Sensing Properties

M. Navaneethan, S. Ponnusamy, C. Muthamizhchelvan, 2020 .

E ﬀ ect of Zn Doping in CuO Octahedral Crystals towards Structural, Optical, and Gas Sensing Properties

M. Navaneethan, S. Ponnusamy, C. Muthamizhchelvan, 2020 .

Ge-on-Si and Ge-on-SOI thermo-optic phase shifters for the mid-infrared.

Gunther Roelkens, Muhammad Muneeb, Roger Loo, 2014, Optics express.

Influence of precursor gas on SiGe epitaxial material quality in terms of structural and electrical defects

A. Hikavyy, R. Loo, E. Simoen, 2015 .

Growth of Ge1 − xSnx heteroepitaxial layers with very high Sn contents on InP(001) substrates

Marika Nakamura, Y. Shimura, O. Nakatsuka, 2012 .

Growth and Characterization of Ge1-xSnx Layers for High Mobility Tensile-Strained Ge Channels of CMOS Devices

Y. Shimura, O. Nakatsuka, S. Takeuchi, 2010 .

Group IV Epi processing, evolution in CMOS from 90 to 10nm node

Robert Langer, Roger Loo, Wei Wang, 2014 .

Thermal stability and relaxation mechanisms in compressively strained Ge0.94Sn0.06 thin films grown by molecular beam epitaxy

O. Richard, H. Bender, K. Temst, 2016 .

Development of epitaxial growth technology for Ge1−xSnx alloy and study of its properties for Ge nanoelectronics

N. Taoka, Y. Shimura, O. Nakatsuka, 2013 .

Structural and Optical Properties of Amorphous and Crystalline GeSn Layers on Si

K. Temst, T. Conard, J. Locquet, 2014 .

Promoting effect of (Co, Ni)O solid solution on Pd catalysts for ethylene glycol electrooxidation in alkaline solution

Cuilian Wen, Y. Shimura, H. Tatsuoka, 2022, Electrochimica Acta.

Epitaxial growth and anisotropic strain relaxation of Ge1−xSnx layers on Ge(1 1 0) substrates

N. Taoka, Y. Shimura, O. Nakatsuka, 2013 .

Silicon-based heterogeneous photonic integrated circuits for the mid-infrared

Joris Van Campenhout, Gunther Roelkens, Alban Gassenq, 2013 .

Carrier scattering induced linewidth broadening in in situ P-doped Ge layers on Si

R. Loo, J. Van Campenhout, D. van Thourhout, 2018, Applied Physics Letters.

Defect evaluation in strain-relaxed Ge0.947Sn0.053 grown on (001) Si

B. Douhard, O. Richard, H. Bender, 2018 .

Effect of atomic deuterium irradiation on initial growth of Sn and Ge1−xSnx on Ge(0 0 1) substrates

Y. Shimura, O. Nakatsuka, S. Takeuchi, 2012 .

Control of strain relaxation behavior of Ge1−xSnx buffer layers

Akira Sakai, Yosuke Shimura, Shigeaki Zaima, 2011 .

Molecular beam deposition of Al2O3 on p-Ge(001)/Ge0.95Sn0.05 heterostructure and impact of a Ge-cap interfacial layer

Wilfried Vandervorst, Yosuke Shimura, Matty Caymax, 2011 .

Photothermally Active Upconversion Core–Shell NaGdF4:Yb:Tm@Cu Nanostructures: Synthesis and Theranostic Properties

Y. Hayakawa, Y. Shimura, Y. Kawata, 2018, Particle & Particle Systems Characterization.

Enhanced photon collection of high surface area carbonate-doped mesoporous TiO2 nanospheres in dye sensitized solar cells

M. Navaneethan, S. Ponnusamy, C. Muthamizhchelvan, 2018 .

Defect and dislocation structures in low-temperature-grown Ge and Ge1-xSnx epitaxial layers on Si(110) substrates

N. Taoka, M. Kurosawa, Y. Shimura, 2016 .

Formation of Ni(Ge1−xSnx) layers with solid-phase reaction in Ni/Ge1−xSnx/Ge systems

R. Loo, M. Caymax, B. Vincent, 2011 .

Sn diffusion during Ni germanide growth on Ge1–xSnx

C. Detavernier, K. Temst, A. Vantomme, 2011 .

Ge1−xSnx stressors for strained-Ge CMOS

Roger Loo, Akira Sakai, Yosuke Shimura, 2011 .

Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors

Yosuke Shimura, Matty Caymax, Shigeaki Zaima, 2011 .

Amorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition

O. Richard, H. Bender, R. Loo, 2015 .

Density and Capture Cross-Section of Interface Traps in GeSnO2 and GeO2 Grown on Heteroepitaxial GeSn.

C. Merckling, R. Loo, M. Heyns, 2016, ACS applied materials & interfaces.

Fabrication of high quality, thin Ge-on-insulator layers by direct wafer-bonding for nanostructured thermoelectric devices

H. Ikeda, Y. Hayakawa, F. Salleh, 2017 .

Synthesis of super-paramagnetic iron oxide nanoparticles assisted by brown seaweed Turbinaria decurrens for removal of reactive navy blue dye

Y. Hayakawa, Y. Shimura, K. Radha, 2017 .

Optical Properties of Ge1-xSnx Epitaxial Layers with Very High Sn Contents

N. Taoka, M. Nakamura, Y. Shimura, 2012, 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM).

Strained Germanium quantum well pMOS FinFETs fabricated on in situ phosphorus-doped SiGe strain relaxed buffer layers using a replacement Fin process

L. Witters, N. Waldron, N. Collaert, 2013, 2013 IEEE International Electron Devices Meeting.

Density and Capture Cross-Section of Interface Traps in GeSnO2 and GeO2 Grown on Heteroepitaxial GeSn.

C. Merckling, R. Loo, M. Heyns, 2016, ACS applied materials & interfaces.

Invited; Positron Annihilation Spectroscopy on Open-Volume Defects in Group IV Semiconductors

R. Loo, E. Simoen, F. Gencarelli, 2014 .

Low temperature growth of Ge1 ― xSnx buffer layers for tensile―strained Ge layers

Akira Sakai, Yosuke Shimura, Shigeaki Zaima, 2010 .

Germanium-on-silicon mid-infrared waveguides and Mach-Zehnder interferometers

Gunther Roelkens, Muhammad Muneeb, Roger Loo, 2013, 2013 IEEE Photonics Conference.