C. Ashby

发表

Advances in selective wet oxidation of AlGaAs alloys

B. E. Hammons, K. Geib, K. Choquette, 1997 .

Fabrication of GaAs Devices

A. Baca, C. Ashby, 2005 .

GaN Etching in BCl 3 /Cl 2 Plasmas

C. G. Willison, S. Pearton, J. Lee, 1998 .

ORIGIN OF THE TIME DEPENDENCE OF WET OXIDATION OF ALGAAS

B. E. Hammons, A. Allerman, C. Ashby, 1999 .

Developing a New Material for MEMS: Amorphous Diamond

D. Laván, M. P. Boer, T. Friedmann, 2000 .

Laser Chemical Etching of Semiconductors

C. Ashby, 1992 .

V-3 – Laser-Driven Etching

C. Ashby, 1991 .

Laser‐driven chemical reaction for etching LiNbO3

C. Ashby, P. Brannon, 1986 .

Laser-induced etching

C. Ashby, 1987, International Laser Science Conference.

Ultraviolet photosulfidation of III‐V compound semiconductors: A new approach to surface passivation

A. J. Howard, B. E. Hammons, K. Zavadil, 1994 .

Cantilever Epitaxy of GaN on Sapphire: Further Reductions in Dislocation Density

A. Allerman, D. Koleske, C. Ashby, 2002 .

Minimizing threading dislocations by redirection during cantilever epitaxial growth of GaN

A. Allerman, D. Koleske, C. Ashby, 2002 .

Characterization of Dark-Block Defects in Cantilever Epitaxial GaN on Sapphire

A. Allerman, D. Koleske, C. Ashby, 2002 .

Wet Oxidation of High-Al-Content III-V Semiconductors: Important Materials Considerations for Device Applications

C. Ashby, 1999 .

Dynamics of Wet Oxidation of High-Al-Content III-V Materials

C. Ashby, 1999 .

Wet thermal oxidation of AlAsSb lattice matched to InP for optoelectronic applications

K. Geib, J. Klem, M. Hafich, 1996 .

Di- and tri-carboxylic-acid-based etches for processing high temperature superconducting thin films and related materials

T. A. Plut, D. Ginley, M. Siegal, 1994 .

OXYGEN DEPENDENT RING CLEAVAGE IN A COPPER COORDINATED CATECHOL

C. Ashby, Glenn C. Vogel, Dennis G. Brown, 1977 .

Crystal structure and nitrogen-14 nuclear quadrupole resonance spectrum of catena-.mu.-imidazolatobis(imidazole)zinc nitrate. Donor characteristics of coordinated imidazolate

C. Ashby, T. L. Brown, E. Duesler, 1978 .

NITROGEN-14 NUCLEAR QUADRUPOLE RESONANCE SPECTRA OF THE COORDINATED AMINO GROUP AND OF COORDINATED IMIDAZOLE. CRYSTAL AND MOLECULAR STRUCTURES OF CHLOROGLYCYLGLYCINATO(IMIDAZOLE)CADMIUM

C. Ashby, W. F. Paton, Theodore I. Brown, 1980 .

Low-Dislocation-Density GaN from a Single Growth on a Textured Substrate

Jung Han, Gregory M. Peake, Paula P. Provencio, 2000 .

Di- and Tricarboxylic-acid-based etches for processing high temperature superconducting thin films

T. A. Plut, D. Ginley, M. Siegal, 1993 .

Improved aqueous etchant for high Tc superconductor materials

Julia M. Phillips, David S. Ginley, Jon S. Martens, 1992 .

High-temperature superconducting shift registers operating at up to 100 GHz

Vincent M. Hietala, S. R. Whiteley, Joel R. Wendt, 1994 .

YBa2Cu3O7 nanobridges fabricated by direct‐write electron beam lithography

T. A. Plut, D. Ginley, M. Siegal, 1992 .

Electron bombardment enhancement of the reactivity of graphite with atomic hydrogen: Threshold‐like effects

C. Ashby, D. Brice, 1984 .

Wet oxidation of AlxGa1−xAs: Temporal evolution of composition and microstructure and the implications for metal-insulator-semiconductor applications

Hong Q. Hou, John P. Sullivan, Albert G. Baca, 1997 .

Electrochemical sulfur passivation of visible (∼670 nm) AlGaInP lasers

A. J. Howard, J. Lott, R. Schneider, 1994 .

Photochemical dry etching of GaAs

C. Ashby, 1984 .

CHAPTER 4 – Photophysics and Thermophysics of Light Absorption and Energy Transport in Solids

J. Tsao, C. Ashby, 1989 .

Inductively coupled plasma reactive ion etching of GaInAsSb and AlGaAsSb for quaternary antimonide multiple interconnected module thermophotovoltaics

R. M. Biefeld, M. Hafich, M. Palmisiano, 2003 .

Composition‐selective photochemical etching of compound semiconductors

R. M. Biefeld, C. Ashby, 1985 .

ECR plasma synthesis of silicon nitride films on GaAs and InSb

A. J. Howard, M. L. Lovejoy, C. Ashby, 1993 .

Wet oxidation of AlGaAs: the role of hydrogen

Kent D. Choquette, Hong Q. Hou, John P. Sullivan, 1997 .

Quartz channel fabrication for electrokinetically driven separations

Stanley H. Kravitz, Mial E. Warren, Carolyn M. Matzke, 1998, Photonics West - Micro and Nano Fabricated Electromechanical and Optical Components.

Electronic excitation in electron bombardment enhancement of chemical reactions

C. Ashby, 1983 .

Temperature dependence of electron bombardment enhanced reactivity of different types of graphite

C. Ashby, 1982 .

Synergistic effect of electrons on the reactivity of atomic hydrogen with graphite

C. Ashby, R. Rye, 1980 .

Electron enhanced hydrogen attack on first wall materials

C. Ashby, R. Rye, 1981 .

Synthesis and processing of thin films in the Tl-Ca-Ba-Cu-O system

D. Ginley, C. Tigges, E. Venturini, 1993, IEEE Transactions on Applied Superconductivity.

CRYSTAL STRUCTURE AND NITROGEN-14 NUCLEAR QUADRUPOLE RESONANCE SPECTRUM OF CATENA-μ-IMIDAZOLATOBIS(IMIDAZOLE)ZINC NITRATE. DONOR CHARACTERISTICS OF COORDINATED IMIDAZOLATE

C. Ashby, T. L. Brown, E. Duesler, 1978 .

Rapid ultrasensitive chemical-fingerprint detection of chemical and biochemical warfare agents.

T. Shepodd, W. Yelton, C. Ashby, 2002 .

High temperature superconducting Josephson transmission lines for pulse and step sharpening

G. A. Vawter, T. A. Plut, D. Ginley, 1992 .

Pattern formation techniques in photochemical etching

C. Ashby, 1992 .

Etching processes for optoelectronic devices employing periodic multilayers of InGaAs/InAlAs

G. A. Vawter, A. J. Howard, R. D. Briggs, 1995 .

Doping level selective photochemical dry etching of GaAs

C. Ashby, 1985 .

Metal-sulfur-based air-stable passivation of GaAs with very low surface-state densities

B. E. Hammons, A. Baca, M. Hafich, 2000 .

Reactive‐ion‐beam etching of InP in a chlorine–hydrogen mixture

G. A. Vawter, C. Ashby, 1994 .

Tensile properties of amorphous diamond films

M. A. Mitchell, David A. LaVan, J. P. Sullivan, 1999 .

Ion‐bombardment‐enhanced etching of LiNbO3 using damage profile tailoring

G. W. Arnold, C. Ashby, P. Brannon, 1989 .

Control of Etching of LiNbO 3 , by Implant Damage Profile Tailoring

G. W. Arnold, C. Ashby, P. Brannon, 1987 .

Barrier-layer-thickness control of selective wet oxidation of AlGaAs for embedded optical elements

C. Ashby, O. Blum, H. Hou, 1997 .

Plasma chemistry dependent ECR etching of GaN

A. J. Howard, S. Pearton, C. Abernathy, 1995 .