S. Ghosh

发表

Carrier dynamics and high-speed modulation properties of tunnel injection InGaAs-GaAs quantum-dot lasers

Jasprit Singh, Theodore B. Norris, Kyoungsik Kim, 2003 .

Cylindrical luminescent solar concentrators with near-infrared quantum dots.

R. Inman, A. Gopinathan, S. Ghosh, 2011, Optics express.

Ultrafast carrier dynamics in tunneling injection quantum dot lasers

P. Bhattacharya, T. Norris, S. Ghosh, 2003, Postconference Digest Quantum Electronics and Laser Science, 2003. QELS..

Nonlinear optical and electro-optic properties of InAs/GaAs self-organized quantum dots

Duncan G. Steel, Omar Qasaimeh, P. Bhattacharya, 2001 .

Understanding the dependence of transport parameters on carrier concentration within a Gaussian density of states in molecular organic semiconductors

S. Ghosh, P. Kumar, A. Sharma, 2016, Journal of physics. Condensed matter : an Institute of Physics journal.

Response to ''Comment on 'Tunnel injection In 0.4 Ga 0.6 As'GaAs quantum dot lasers with 15 GHz modulation bandwidth at room temperature' '' ÜAppl. Phys. Lett. 81, 2659 Ñ2002Öá

P. Bhattacharya, S. Ghosh, 2002 .

High-responsivity high-gain In/sub 0.53/Ga/sub 0.47/As-InP quantum-well infrared photodetectors grown using metal-organic vapor phase epitaxy

D. Tsui, S. Ghosh, B. Arora, 2005, IEEE Journal of Quantum Electronics.

Interface dipole responsible for fermi level pinning in metal/3,4,9,10 perylenetetracarboxylic dianhydride interfaces

S. Ghosh, R. Agrawal, P. Kumar, 2007, 2007 International Workshop on Physics of Semiconductor Devices.

Ge/SiGeSn multiple quantum well photonic devices

P. K. Basu, G. Sen, B. Mukhopadhyay, 2008, 2008 2nd National Workshop on Advanced Optoelectronic Materials and Devices.

Estimation of external quantum efficiency of Ge rich Si1-x-yGexCy on Si photodetectors at 1.3 μm

P. K. Basu, B. Mukhopadhyay, S. Ghosh, 2007, 2007 International Workshop on Physics of Semiconductor Devices.

Opto-electronic devices based on wurtzite group-III nitride films with non-polar orientations

S. Ghosh, S. Ghosh, 2007, 2007 International Workshop on Physics of Semiconductor Devices.

On the Relationship Between Electrical and Electro-Optical Characteristics in 1.55 μm Quantum Dot Lasers

G. Eisenstein, J. Reithmaier, S. Ghosh, 2018, 2018 IEEE International Semiconductor Laser Conference (ISLC).

Polarization based control of optical hysteresis in coupled GaAs microdisks

D. Awschalom, Sayantani Ghosh, B. Buckley, 2010 .

Electrically injected photonic crystal edge-emitting quantum-dot light source

P. Yu, P. Bhattacharya, S. Pradhan, 2004, IEEE Photonics Technology Letters.

Tunnel injection In0.4Ga0.6As/GaAs quantum dot lasers with 15 GHz modulation bandwidth at room temperature

P. Bhattacharya, S. Ghosh, P. K. Bhattacharya, 2002 .

Raman coherence beats from entangled polarization eigenstates in InAs quantum dots.

P. Bhattacharya, S. Ghosh, S. Ghosh, 2002, Physical review letters.

Anomalous drag coupling between a thin superconducting film and a two-dimensional electron gas caused by radio frequency interference

P. Bhattacharya, S. Ghosh, Ç. Kurdak, 2004 .

Postgrowth nondestructive characterization of dilute-nitride VCSELs using electroreflectance spectroscopy

M. Hofmann, S. Ghosh, S. Ghosh, 2003, IEEE Photonics Technology Letters.

Linewidth enhancement factor and near-field pattern in tunnel injection In0.4Ga0.6As self-assembled quantum dot lasers

Sasan Fathpour, Susanta Ghosh, S. Fathpour, 2003 .

Dynamic characteristics of high-speed In0.4Ga0.6As/GaAs self-organized quantum dot lasers at room temperature

P. Bhattacharya, S. Pradhan, S. Ghosh, 2002 .

Double AC photoreflectance spectroscopy of semiconductors

S. Ghosh, B. Arora, 1995 .

ouble AC hotoreflectanc y of Semiconductors

B. M. Arora, S. Ghosh, S. Ghosh, 1995 .

In-plane velocity-field characteristics of InAs self-assembled quantum dot layers

P. Bhattacharya, J. Singh, S. Ghosh, 2002 .

Conduction band offset in InAs/GaAs self-organized quantum dots measured by deep level transient spectroscopy

P. Bhattacharya, J. Singh, S. Ghosh, 2000 .

I-V-T, C-V and photoelectric characteristics of Ni-GaN Schottky and n+ InN-GaN Heterostructure Interface

A. Bhattacharya, S. Ghosh, M. Gokhale, 2007, 2007 International Workshop on Physics of Semiconductor Devices.

Level degeneracy and temperature-dependent carrier distributions in self-organized quantum dots

Jasprit Singh, Theodore B. Norris, Kuk-Hwan Kim, 2003 .

Temperature-dependent measurement of Auger recombination in self-organized In0.4Ga0.6As/GaAsIn0.4Ga0.6As/GaAs quantum dots

J. Laskar, Jasprit Singh, S. Nuttinck, 2001 .

Temperature dependent steady-state characteristics of high-performance tunnel injection quantum dot lasers

Susanta Ghosh, P. Bhattacharya, S. Pradhan, 2002 .

High-speed quantum dot lasers

S. Fathpour, P. Bhattacharya, S. Ghosh, 2005, 2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601).

Dual-Carrier High-Gain Low-Noise Superlattice Avalanche Photodiodes

M. Hayat, S. Ghosh, Jun Huang, 2013, IEEE Transactions on Electron Devices.

Lateral hopping conductivity and large negative magnetoresistance in InAs/AlGaAs self-organized quantum dots

J. Singh, S. Ghosh, B. Kochman, 2002 .