Yu. B. Bolkhovityanov

发表

GaAs epitaxy on Si substrates: modern status of research and engineering

O. P. Pchelyakov, O. Pchelyakov, Yu. B. Bolkhovityanov, 2008 .

Artificial GeSi substrates for heteroepitaxy: Achievements and problems

L. V. Sokolov, O. P. Pchelyakov, O. Pchelyakov, 2003 .

Strain relaxation of GeSi/Si(001) heterostructures grown by low-temperature molecular-beam epitaxy

L. V. Sokolov, A. K. Gutakovskii, Yu. B. Bolkhovityanov, 2004 .

InGaAsP/InGaP superlattices by conventional MBE with molten metal solution phosphorus source

B. R. Semyagin, V. V. Preobrazhenskii, O. P. Pchelyakov, 2003 .

III-V Compounds-on-Si: Heterostructure Fabrication, Application and Prospects

O. P. Pchelyakov, O. Pchelyakov, Yu. B. Bolkhovityanov, 2009 .

Elastically strained InGaAsP films grown by LPE and conception of stress-induced supercooling

Yu. B. Bolkhovityanov, Y. Bolkhovityanov, 1995 .

Instability of “slow” solid‐liquid interface relaxation before the hetero‐LPE of III‐V compounds

Yu. B. Bolkhovityanov, S. Chikichev, Y. Bolkhovityanov, 1983 .

Ge-on-Si films obtained by epitaxial growing: edge dislocations and their participation in plastic relaxation

Yu. B. Bolkhovityanov, L. Sokolov, Y. Bolkhovityanov, 2012 .

Optimization of the plastic relaxation of misfit stresses in GexSi1−x/Si(001) (x≤0.61) heterostructures

Yu. B. Bolkhovityanov, A. Gutakovskii, L. Sokolov, 2004 .

Role of edge dislocations in plastic relaxation of GeSi/Si(001) heterostructures: Dependence of introduction mechanisms on film thickness

Yu. B. Bolkhovityanov, A. Gutakovskii, L. Sokolov, 2015 .

Mechanism of induced nucleation of misfit dislocations in the Ge-on-Si(0 0 1) system and its role in the formation of the core structure of edge misfit dislocations

Yu. B. Bolkhovityanov, A. Gutakovskii, L. Sokolov, 2013 .

Mechanisms of edge-dislocation formation in strained films of zinc blende and diamond cubic semiconductors epitaxially grown on (001)-oriented substrates

Yu. B. Bolkhovityanov, A. Gutakovskii, L. Sokolov, 2011 .

Strained germanium films in Ge/InGaAs/GaAs heterostructures: Formation of edge misfit dislocations at the Ge/InGaAs interface

Yu. B. Bolkhovityanov, M. Putyato, A. Gutakovskii, 2011 .

Formation of misfit edge dislocations in GexSi1 − x films (x ∼ 0.4–0.5) grown on tilted Si(001) → (111) substrates

Yu. B. Bolkhovityanov, A. Gutakovskii, L. Sokolov, 2008 .

Potentialities and basic principles of controlling the plastic relaxation of GeSi/Si and Ge/Si films with stepwise variation in the composition

O. Pchelyakov, Yu. B. Bolkhovityanov, A. Gutakovskii, 2008 .

Crystal perfection of GaP films grown on Si substrates by solid-source MBE with atomic hydrogen

Yu. B. Bolkhovityanov, A. Gutakovskii, A. Vasilenko, 2009 .

Silicon-germanium nanostructures with quantum dots: Formation mechanisms and electrical properties

A. Yakimov, A. Dvurechenskii, O. Pchelyakov, 2000 .

InGaAsP Solid Solutions: Phase Diagrams, Growth from the Melt on GaAs Substrates, Elastically Strained Epitaxial Layers

Yu. B. Bolkhovityanov, M. A. Revenko, A. S. Yaroshevich, 2002 .

Specific behaviour of stress relaxation in GexSi1−x films grown on porous silicon based mesa substrates: computer calculations

O. Pchelyakov, Yu. B. Bolkhovityanov, L. Sokolov, 2003 .