Z. Ye

Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

Y. Bogumilowicz, F. Ducroquet, Xinyu Bao, 2016 .

Efficiency droop in blue InGaN/GaN single-quantum-well light-emitting diodes on the Si substrate

M. Lei, Z. Ye, M. L. Liu, 2012 .

The enhancement of light-emitting efficiency using GaN-based multiple quantum well light-emitting diodes with nanopillar arrays

P. Han, Rong Zhang, Youdou Zheng, 2013 .

Toward the III–V/Si co-integration by controlling the biatomic steps on hydrogenated Si(001)

D. Caliste, X. Bao, Y. Bogumilowicz, 2016, 1701.08078.

Anti-phase boundaries–Free GaAs epilayers on “quasi-nominal” Ge-buffered silicon substrates

J. Hartmann, X. Bao, Y. Bogumilowicz, 2015 .

Low defect InGaAs quantum well selectively grown by metal organic chemical vapor deposition on Si(100) 300 mm wafers for next generation non planar devices

X. Bao, C. Vizioz, V. Loup, 2014 .