Y. Wu

发表

Room-temperature broadband emission of an InGaAs/GaAs quantum dots laser.

J. Fastenau, W. K. Liu, M. Hopkinson, 2007, Optics letters.

InGaAs-InP DHBTs for increased digital IC bandwidth having a 391-GHz f/sub /spl tau// and 505-GHz f/sub max/

J. Fastenau, D. Lubyshev, M. Rodwell, 2005, IEEE Electron Device Letters.

Wideband DHBTs using a graded carbon-doped InGaAs base

J. Fastenau, D. Lubyshev, M. Urteaga, 2003, IEEE Electron Device Letters.

Molecular Beam Epitaxy Growth of High Mobility Compound Semiconductor Devices for Integration with Si CMOS

Amy W. K. Liu, J. Fastenau, D. Lubyshev, 2009 .

In/sub 0.53/Ga/sub 0.47/As/InP Type-I DHBTs w/ 100 nm collector and 491 GHz f,415 GHz f/sub max/

J. Fastenau, M. Rodwell, X. Fang, 2005, International Conference on Indium Phosphide and Related Materials, 2005.

InGaAs-InP Mesa DHBTs With Simultaneously High and and Low Ratio

Mark J. W. Rodwell, J. M. Fastenau, Dmitri Lubyshev, 2004 .

Optical and electrical characteristics of GaAs/InGaAs quantum-well device

R. Hsu, C. Ho, Y. Wu, 2009 .

InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous $f_{\tau}/f_{\max} \sim \hbox{430/800}\ \hbox{GHz}$

J. Fastenau, W. K. Liu, M. Urteaga, 2011, IEEE Electron Device Letters.

High speed devices

P. Asbeck, S. Mookerjea, D. Ritter, 2010, 68th Device Research Conference.

Comparison of Al0.32Ga0.68N ∕ GaN Heterostructure Field-Effect Transistors with Different Channel Thicknesses

R. Hsu, W. Hsu, Y. Wu, 2007 .

Growth and characterization of GaN/AlGaN high-electron mobility transistors grown on p-type Si substrates

C. Shih, Y. Wu, C. Liang, 2006 .

Molecular beam epitaxy growth of metamorphic high electron mobility transistors and metamorphic heterojunction bipolar transistors on Ge and Ge-on-insulator/Si substrates

J. Fastenau, W. K. Liu, D. Lubyshev, 2008 .

Monolithic III-V/Si integration

J. Fastenau, D. Lubyshev, B. Brar, 2008, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology.

Thermal considerations for advanced SOI substrates designed for III-V/Si heterointegration

E. Augendre, M. Urteaga, B. Brar, 2009, 2009 IEEE International SOI Conference.

Monolithic integration of InP-based transistors on Si substrates using MBE

T. E. Kazior, Bobby Brar, Dmitri Lubyshev, 2009 .

Characteristics of graded‐like multiple‐delta‐doped GaAs field effect transistors

M. Kao, R. Hsu, W. Hsu, 1995 .

Improvement of substrate temperature uniformity by using a dual-zone substrate heater in a commercial 4 in. GEN-III molecular beam epitaxy single-wafer reactor

W. K. Liu, D. Loubychev, X. Fang, 2001 .

Monolithic InAs/InAlGaAs/InP quantum-dash-in-well extended-cavity laser fabricated by postgrowth intermixing

J. Fastenau, W. K. Liu, Y. Wang, 2008, Laser Physics.

Electrical characteristics of a lattice-matched In0.53Al0.22Ga0.25AsInP heterojunction bipolar transistor with zero potential spike at emitter-base heterojunction

W. Hsu, J. Su, Wen-Chau Liu, 1995 .

Characteristics of In0.53Ga0.47As/InP double and single heterostructure-emitter bipolar transistors grown by LP-MOCVD

W. Hsu, J. Su, Wen-Chau Liu, 1995 .

A New In 0.53 Al 0.22 Ga 0.25 As/InP Heterojunction Bipolar Transistor Grown by LP-MOCVD

W. Hsu, J. Su, Wen-Chau Liu, 1994 .

Comparison of As- and P-based metamorphic buffers for high performance InP heterojunction bipolar transistor and high electron mobility transistor applications

Dmitri Lubyshev, Sara Bals, Joel M. Fastenau, 2004 .

Strain relaxation and dislocation filtering in metamorphic HBT and HEMT structures grown on GaAs substrates by MBE

J. Fastenau, D. Lubyshev, M. Rodwell, 2004, 16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004..

A novel InAlAs/InGaAs two-terminal real-space transfer diode

W. Hsu, J. Su, Y. Wu, 1996 .