Yongxian Gu

Self-Heating Effect on the Two-State Lasing Behaviors in 1.3-µm InAs–GaAs Quantum-Dot Lasers

Tao Yang, Zhan-guo Wang, H. Ji, 2010 .

Theoretical study of the effects of n-type doping in InAs/GaAs quantum dot layer on current–voltage characteristics of intermediate band solar cells

P. Xu, Yongxian Gu, Y. Gu, 2018, Japanese Journal of Applied Physics.

Improved efficiency of InAs/GaAs quantum dots solar cells by Si-doping

Xiaoguang Yang, Tao Yang, Xiaodong Wang, 2013 .

Theoretical study of the effects of InAs/GaAs quantum dot layer’s position in i-region on current-voltage characteristic in intermediate band solar cells

Xiaoguang Yang, Tao Yang, H. Ji, 2012 .

High-brightness 1.3 μm InAs/GaAs quantum dot tapered laser with high temperature stability.

Tao Yang, H. Ji, Yulian Cao, 2012, Optics letters.

Temperature-dependent modulation characteristics for 1.3 mu m InAs/GaAs quantum dot lasers

Tao Yang, Zhan-guo Wang, H. Ji, 2010 .

Reduced linewidth enhancement factor due to excited state transition of quantum dot lasers.

Yong-Zhen Huang, Jin-Long Xiao, Tao Yang, 2012, Optics letters.