A. Melton

发表

Thermopower Study of GaN-Based Materials for Next-Generation Thermoelectric Devices and Applications

I. Ferguson, M. Asghar, Elisa Hurwitz, 2011 .

MOCVD growth of GaN on Si(111) substrates using an ALD-grown Al2O3 interlayer

I. Ferguson, Hongbo Yu, C. Summers, 2009 .

DEVELOPMENT OF WIDE BANDGAP SOLID-STATE

A. Melton, 2011 .

Development of wide bandgap solid-state neutron detectors

A. Melton, 2011 .

Electrical and magnetic properties of Ga 1-x Gd x N grown by metal organic chemical vapor deposition

I. Ferguson, Hongbo Yu, A. Melton, 2011 .

Thermal Stability of InN Epilayers Grown by High Pressure Chemical Vapor Deposition

I. Ferguson, N. Dietz, S. Gamage, 2013 .

Development of free-standing InGaN LED devices on Al2O3/Si substrate by wet etching

I. Ferguson, B. Jampana, A. Melton, 2011 .

InGaN solar cell design by surface inversion caused by piezoelectric polarization

I. Ferguson, R. Opila, C. Honsberg, 2009, 2009 34th IEEE Photovoltaic Specialists Conference (PVSC).

Optical Probe in Gadolinium Doped GaN by Metalorganic Chemical Vapor Deposition

Z. Feng, A. Melton, Xiang Ping Shu, 2013 .

A systematic study of the thermoelectric properties of GaN-based wide band gap semiconductors

I. Ferguson, Elisa Hurwitz, A. Melton, 2012 .

n-type, p-type and semi-insulating ZnO:N thin film growth by metal organic chemical vapor deposition with NH3 doping

I. Ferguson, A. Melton, W. Fenwick, 2009 .

Effects of N doping on ZnO thin films grown by MOVPE

I. Ferguson, A. Ougazzaden, Hongbo Yu, 2008 .

NH3 Doping in MOCVD Growth of ZnO Thin Films

I. Ferguson, N. Li, A. Melton, 2008 .

Design of Shallow Acceptors in GaN through Zinc–Magnium Codoping: First-Principles Calculation

I. Ferguson, X. Yi, A. Melton, 2013 .

Growth and characterization of InxGa1−xN alloys by metalorganic chemical vapor deposition for solar cell applications

I. Ferguson, R. Dupuis, B. Jampana, 2012 .

High indium composition (≫20%) InGaN epi-layers on ZnO substrates for very high efficiency solar cells

I. Ferguson, R. Opila, C. Honsberg, 2009, 2009 34th IEEE Photovoltaic Specialists Conference (PVSC).

Seebeck and Spin Seebeck effect in Gd-doped GaN thin films for Thermoelectric Devices and Applications

I. Ferguson, Elisa Hurwitz, A. Melton, 2011 .

Comparison of neutron conversion layers for GaN‐based scintillators

I. Ferguson, A. Melton, E. Burgett, 2012 .

The development of a universal substrate technology for the growth of light emitting diodes

I. Ferguson, A. Melton, B. Kucukgok, 2012, High Capacity Optical Networks and Emerging/Enabling Technologies.

MOVPE growth of transition-metal-doped GaN and ZnO for spintronic applications

Ian T. Ferguson, William E. Fenwick, Tahir Zaidi, 2008 .

Properties of MOCVD-Grown GaN:Gd Films for Spintronic Devices

I. Ferguson, A. Melton, B. Kucukgok, 2012 .

GaN as a neutron detection material

I. Ferguson, A. Melton, M. Jamil, 2010, Proceedings of the IEEE SoutheastCon 2010 (SoutheastCon).

Effect of V/III molar ratio on the structural and optical properties of InN epilayers grown by HPCVD

A. G. Unil Perera, Ian T. Ferguson, M. K. I. Senevirathna, 2012, Other Conferences.

Compositional instability in strained InGaN epitaxial layers induced by kinetic effects

I. Ferguson, R. Dupuis, B. Jampana, 2011 .

Development of indium-rich InGaN epilayers for integrated tandem solar cells

I. Ferguson, N. Dietz, A. Melton, 2013 .

Room temperature GaN-based spin polarized emitters

Ian T. Ferguson, Na Lu, Bahadir Kucukgok, 2013, Photonics West - Optoelectronic Materials and Devices.

Development of room temperature spin polarised emitters

I. Ferguson, A. Melton, N. Lu, 2011, 8th International Conference on High-capacity Optical Networks and Emerging Technologies.

Ga 1-x Gd x N-Based Spin Polarized Light Emitting Diode

I. Ferguson, A. Melton, M. Jamil, 2011 .

p-InGaN/AlGaN electron blocking layer for InGaN/GaN blue light-emitting diodes

I. Ferguson, Liancheng Wang, X. Yi, 2012 .

MOVPE growth of AlGaN/GaN superlattices on ZnO substrates for green emitter applications

Ian T. Ferguson, Nola Li, Benjamin Klein, 2008, Optical Engineering + Applications.

Investigation of electron energy states in InGaN/GaN multiple quantum wells

I. Ferguson, M. Asghar, Elisa Hurwitz, 2012 .

Investigation of Wide Bandgap Semiconductors for Thermoelectric Applications

I. Ferguson, A. Melton, B. Kucukgok, 2013 .

Ferromagnetism and its stability in n-type Gd-doped GaN: First-principles calculation

I. Ferguson, Yi Shi, Jun Kang, 2012 .

Effect of reactor pressure on the electrical and structural properties of InN epilayers grown by high-pressure chemical vapor deposition

I. Ferguson, N. Dietz, A. Perera, 2012 .

Effect of nucleation period on the physical properties of InN epilayers

M. K. I. Senevirathna, A. G. U. Perera, I. T. Ferguson, 2012, Other Conferences.

Design and Realization of Wide-Band-Gap ($\sim$ 2.67 eV) InGaN p-n Junction Solar Cell

M. Jamil, I. Ferguson, R. Opila, 2010, IEEE Electron Device Letters.

In Situ Fabrication of Oxide Apertures in Vertical-Cavity Surface-Emitting Lasers

A. Melton, 2005 .

MOCVD Growth of High-Hole Concentration (>2×10 19 cm −3 ) P-Type InGaN for Solar Cell Application

I. Ferguson, Hongbo Yu, B. Jampana, 2008 .

Comparison of thermoelectric properties of GaN and ZnO samples

I. Ferguson, A. Melton, B. Kucukgok, 2014 .