M. Schurman

发表

HIGH SPATIAL RESOLUTION THERMAL CONDUCTIVITY OF LATERAL EPITAXIAL OVERGROWN GAN/SAPPHIRE (0001) USING A SCANNING THERMAL MICROSCOPE

I. Ferguson, V. Asnin, J. Ramer, 1999 .

Thermal conductivity of fully and partially coalesced lateral epitaxial overgrown GaN/sapphire (0001) by scanning thermal microscopy

I. Ferguson, V. Asnin, J. Ramer, 2000 .

High Quality P‐Type GaN Deposition on c‐Sapphire Substrates in a Multiwafer Rotating‐Disk Reactor

S. Pearton, Yicheng Lu, R. Kolbas, 1995 .

Investigation of n‐ and p‐type doping of GaN during epitaxial growth in a mass production scale multiwafer‐rotating‐disk reactor

S. Pearton, Yicheng Lu, R. Kolbas, 1995 .

Effect of temperature on Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor field-effect transistors

Albert G. Baca, S. J. Pearton, C. R. Abernathy, 1998 .

Temperature dependence of the energies and broadening parameters of the excitonic interband transitions in Ga0.95Al0.05N

Z. Feng, F. Pollak, M. Schurman, 1997 .

Thermomodulated Reflectivity Spectra of Gan/Sapphire Epilayer

Yicheng Lu, H. Shen, M. Wraback, 1996 .

RAMAN MICROSCOPY OF LATERAL EPITAXIAL OVERGROWTH OF GAN ON SAPPHIRE

F. H. Long, I. Ferguson, J. Ramer, 1999 .

Waveguide study and refractive indices of GaN:Mg epitaxial film.

Y. Shih, M. Schurman, R. Stall, 1996, Optics letters.

Band Structure Effects on the Transient Electron Velocity Overshoot in GaN

I. Ferguson, R. Dupuis, J. Campbell, 2001 .

Effect of structural defects and chemical impurities on hall mobilities in low pressure MOCVD grown GaN

M. Schurman, R. Stall, Y. Lu, 1997 .

Improved ultraviolet quantum efficiency using a transparent recessed window AlGaN/GaN heterojunction p-i-n photodiode

R. Dupuis, C. Collins, M. Schurman, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

Optical Studies of MOCVD In x Ga 1-x N Alloys

Z. Feng, M. Schurman, W. Shan, 1996 .

Line strengths for Δv3=1 transitions in isotopic CS2 species with a stabilized tunable diode laser

V. Dunjko, M. Schurman, A. Mantz, 1994 .

Mass Production of High Brightness Blue and Green LEDs by MOCVD

R. F. Karlicek, M. G. Brown, M. Schurman, 1999 .

Phase separation in InGaN/GaN multiple quantum wells and its relation to brightness of blue and green LEDs

R. F. Karlicek, I. Ferguson, A. Osinsky, 1998 .

Optical transitions in InxGa1−xN alloys grown by metalorganic chemical vapor deposition

Z. Feng, M. Schurman, W. Shan, 1996 .

Nondestructive, Room Temperature Determination Of The Nature Of The Band-Bending (Carrier Type) In Group III Nitrides Using Contactless Electroreflectance And Surface Photovoltage Spectroscopy

Z. Feng, F. Pollak, M. Schurman, 1997 .

Inductively coupled plasma etching of GaN

Robert F. Karlicek, R. J. Shul, R. F. Karlicek, 1996 .

Competition between band gap and yellow luminescence in GaN and its relevance for optoelectronic devices

Robert F. Karlicek, R. F. Karlicek, W. Grieshaber, 1996 .

Determination of the carrier-type at III-nitride semiconductor surfaces/interfaces using contactless electroreflectance

Z. Feng, F. Pollak, M. Schurman, 1998 .

Temperature Dependence of Bound Exciton Emissions in GaN

I. Ferguson, S. Chua, Z. Feng, 1998 .

Demonstration of GaN MIS diodes by using AlN and Ga2O3(Gd2O3) as dielectrics

C. R. Abernathy, F. Ren, S. Pearton, 1998 .

OPTICS 2409 High power mid-infrared interband cascade lasers based on type-II quantum wells

Takashi Jimbo, Rui Q. Yang, Fredrik Laurell, 1997 .

Effect of substrate pretreatment on growth of GaN on (0001) sapphire by low pressure metalorganic chemical vapor deposition

Yicheng Lu, M. Schurman, R. Stall, 1995 .

Time-resolved electroabsorption measurement of the electron velocity-field characteristic in GaN

Hongen Shen, Michael Wraback, Ian T. Ferguson, 2000 .

Optical properties of InxGa1−xN alloys grown by metalorganic chemical vapor deposition

Zhe Chuan Feng, Eugene E. Haller, Matthew D. McCluskey, 1998 .

Low dark current GaN avalanche photodiodes

J.C. Campbell, I. Ferguson, R. Dupuis, 2000, IEEE Journal of Quantum Electronics.

Structural properties of GaN grown by MOVPE turbodisc mass-production reactor

I. Ferguson, A. Thompson, M. Schurman, 1997 .

Pressure-dependent photoluminescence study of InxGa1−xN

Z. Feng, M. Schurman, W. Shan, 1997 .

The Role of Impurities in LP-MOCVD Grown Gallium Nitride

Yicheng Lu, M. Schurman, R. Stall, 1995 .

Near-band-edge photoluminescence emission in AlxGa1−xN under high pressure

E. Haller, J. Ager, W. Walukiewicz, 1998 .

Raman scattering as a characterization tool for epitaxial GaN thin films grown on sapphire by turbo disk metal-organic chemical vapor deposition.

M. Schurman, R. Stall, Z C Feng, 1997, Applied optics.

Linear optical properties of a heavily Mg-doped Al0.09Ga0.91N epitaxial layer

John F. Muth, H. C. Casey, Yun-Chorng Chang, 1999 .

Temperature dependence of energy gap in GaN thin film studied by thermomodulation

Michael Wraback, Yicheng Lu, Richard A. Stall, 1997 .

High Pressure Study of III-Nitrides and Related Heterostructures

E. Haller, J. Ager, W. Walukiewicz, 1997 .

Photoluminescence and Sims Studies of Hydrogen Passivation of Mg-Doped P-Type Gallium Nitride

M. Wraback, M. Schurman, R. Stall, 1995 .

Reproducibility of GaN and InGaN films grown in a multi-wafer rotating-disc reactor

I. Ferguson, A. Thompson, M. Schurman, 1997 .

Time-resolved electroabsorption measurement of the transient electron velocity overshoot in GaN

I. Ferguson, R. Dupuis, J. Campbell, 2001 .