H. Fatima

发表

Thermal management of AlGaN-GaN HFETs on sapphire using flip-chip bonding with epoxy underfill

G. Simin, A. Koudymov, M.A. Khan, 2003, IEEE Electron Device Letters.

AlGaN/GaN/AlGaN double heterostructure for high-power III-N field-effect transistors

G. Simin, M. Khan, V. Adivarahan, 2003 .

Corrigendum: Direct current performance and current collapse in AlGaN/GaN insulated gate high-electron mobility transistors on Si (1 1 1) substrate with very thin SiO2 gate dielectric

Vinod Adivarahan, M. Khan, V. Adivarahan, 2012 .

SiO/sub 2//AlGaN/InGaN/GaN MOSDHFETs

M. Shur, G. Simin, R. Gaska, 2002, IEEE Electron Device Letters.

2003 Index IEEE Electron Device Letters Vol. 24

G. Simin, Junliang Yang, R. Gaska, 2003 .

Maximum current in nitride-based heterostructure field-effect transistors

M. Shur, G. Simin, M. Khan, 2002 .

A New Degradation Mechanism in High-Voltage SiC Power MOSFETs

Sei-Hyung Ryu, A. Agarwal, S. Ryu, 2007, IEEE Electron Device Letters.

Degradation of Majority Carrier Conductions and Blocking Capabilities in 4H-SiC High Voltage Devices due to Basal Plane Dislocations

A. Agarwal, S. Ryu, Qingchun Zhang, 2008 .

Submicron gate Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors

A. Tarakji, G. Simin, A. Koudymov, 2003, IEEE Electron Device Letters.

-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors

M. Shur, G. Simin, R. Gaska, 2003 .

Development of A 4H-SiC CMOS Inverter

Sei-Hyung Ryu, John W. Palmour, Brett Hull, 2006 .