J. Zhang

Thermal management of AlGaN-GaN HFETs on sapphire using flip-chip bonding with epoxy underfill

G. Simin, A. Koudymov, M.A. Khan, 2003, IEEE Electron Device Letters.

Large periphery high-power AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC with oxide-bridging

A. Tarakji, G. Simin, J. Yang, 2001, IEEE Electron Device Letters.

High-quality AlGaN layers over pulsed atomic-layer epitaxially grown AlN templates for deep ultraviolet light-emitting diodes

M. Shatalov, C. Chen, Hong Wang, 2003 .

Fine structure of AlN∕AlGaN superlattice grown by pulsed atomic-layer epitaxy for dislocation filtering

M. Khan, J. Yang, Jian Ping Zhang, 2005 .

Carrier diffusion and recombination in highly excited InGaN/GaN heterostructures

Michael S. Shur, Kestutis Jarasiunas, Arturas Zukauskas, 2005 .

Investigation of the effect of indium mole fractions on recombination processes in AlInGaN layers grown by pulsed MOCVD

M. Khan, J. Yang, J. Zhang, 2003 .

Deep ultraviolet light-emitting diodes using quaternary AlInGaN multiple quantum wells

Grigory Simin, Max Shatalov, Vinod Adivarahan, 2002 .