J. Flynn

发表

9.4-W/mm power density AlGaN-GaN HEMTs on free-standing GaN substrates

D.E. Meharry, R. Actis, K. Nichols, 2004, IEEE Electron Device Letters.

TWO-DIMENSIONAL ELECTRON GAS PROPERTIES OF ALGAN/GAN HETEROSTRUCTURES GROWN ON 6H-SIC AND SAPPHIRE SUBSTRATES

M. Tischler, W. Mitchel, J. Redwing, 1996 .

Impact of layer structure on performance of unpassivated AlGaN/GaN/SiC HEMTs

Peter Kordos, Michel Marso, M. Wolter, 2004 .

Delta doped AlGaN and AlGaN/GaN HEMTs: Pathway to improved performance?

J. Flynn, J. Dion, G. Brandes, 2003 .

AlGaN/GaN High Electron Mobility Transistor Structure Design and Effects on Electrical Properties

J. Redwing, E. Piner, J. Flynn, 1999 .

Fabrication of self-aligned T-gate AlGaN/GaN high electron mobility transistors

Hyeongnam Kim, Jaesun Lee, W. Lu, 2004, Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004..

Conductivity and Hall effect of free-standing highly resistive epitaxial GaN:Fe substrates

P. Kordos, J. Novák, J. Flynn, 2004 .

Influence of growth temperature on emission efficiency of InGaN/GaN multiple quantum wells

A. Cartwright, M. Cheung, J. Flynn, 2001 .

OPTICALLY PUMPED INGAN/GAN DOUBLE HETEROSTRUCTURE LASERS WITH CLEAVED FACETS

V. M. Phanse, K. Boutros, J. Redwing, 1998 .

MOVPE Growth of High Electron Mobility AlGaN/GaN Heterostructures

M. Tischler, A. Saxler, W. Mitchel, 1995 .

An optically pumped GaN–AlGaN vertical cavity surface emitting laser

Joan M. Redwing, Neal G. Anderson, Michael A. Tischler, 1996 .

Characterization of Mg doped GaN by positron annihilation spectroscopy

J. Flynn, G. Brandes, T. Ohdaira, 2002 .

Substrate effects on GaN photoconductive detector performance

Joan M. Redwing, G. M. Smith, Jeffrey S. Flynn, 1999 .

Al 0.15 Ga 0.85 N/GaN heterostructures: Effective mass and scattering times

M. Tischler, W. Mitchel, J. Redwing, 1998 .

AlGaN/GaN Schottky diode hydrogen sensor performance at high temperatures with different catalytic metals

Wu Lu, Jeffrey S. Flynn, W. Lu, 2005 .

GaN boule growth: A pathway to GaN wafers with improved material quality

Xueping Xu, Jeffrey S. Flynn, Robert P. Vaudo, 2002 .

Acid etching for accurate determination of dislocation density in GaN

R. Vaudo, J. Flynn, G. Brandes, 2002 .

Transport coefficients of AlGaN/GaN heterostructures

M. Tischler, W. Mitchel, J. Redwing, 1998 .

Properties of Delta Doped Al 0.25 Ga 0.75 N and GaN Epitaxial Layers

J. Flynn, J. Dion, G. Brandes, 2002 .

Influence of annealed ohmic contact metals on polarisation of AlGaN barrier layer

Zhaojun Lin, Jaesun Lee, W. Lu, 2003 .

InGaN Double-Heterostructures and Dh-Leds on Hvpe Gan-on-Sapphire Substrates

V. M. Phanse, K. Boutros, J. Redwing, 1997 .

Pt-AlGaN∕GaN Schottky diodes operated at 800°C for hydrogen sensing

Wu Lu, Jeffrey S. Flynn, W. Lu, 2005 .

High temperature hydrogen sensors based on AlGaN/GaN heterostructures

Wu Lu, W. Lu, J. Flynn, 2004, Proceedings of IEEE Sensors, 2004..