N. Ikeda

发表

Over 55 A, 800 V high power AlGaN/GaN HFETs for power switching application

Seikoh Yoshida, Nariaki Ikeda, Hiroshi Kambayashi, 2007 .

High Power AlGaN/GaN Schottky Barrier Diode with 1000 V Operation

H. Takehara, T. Wada, Jiang Li, 2005 .

AlGaN/GaN field effect Schottky barrier diode (FESBD)

Jiang Li, N. Ikeda, S. Yoshida, 2005 .

Low On-Voltage Operation AlGaN/GaN Schottky Barrier Diode with a Dual Schottky Structure

Jiang Li, Takahiro Wada, Hironari Takehara, 2005, IEICE Trans. Electron..

Fabrication of AlGaN/GaN HFET with a high breakdown voltage of over 1050 V

S. Yoshida, H. Takehara, H. Kambayashi, 2006, 2006 IEEE International Symposium on Power Semiconductor Devices and IC's.

Fabrication of AlGaN/GaN HFET with a High Breakdown Voltage on 4-inch Si (111) Substrate by MOVPE

H. Takehara, M. Iwami, Jiang Li, 2006 .

High-Power GaN HFETs on Si Substrate

M. Iwami, Jiang Li, N. Ikeda, 2008 .

Normally off operation GaN-based MOSFETs for power electronics applications

T. Chow, Jiang Li, S. Ootomo, 2009, 2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium.

High field-effect mobility normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate by selective area growth technique

N. Ikeda, H. Kambayashi, Y. Satoh, 2011 .

High-performance normally off FET using an AlGaN/GaN heterostructure on Si substrate

H. Takehara, T. Wada, Jiang Li, 2005 .

Normally-off operation GaN HFET using a thin AlGaN layer for low loss switching devices

Jiang Li, N. Ikeda, Kazuo Kato, 2004 .

A Novel GaN Device with Thin AlGaN/GaN Heterostructure for High-power Applications

Jiang Li, N. Ikeda, S. Yoshida, 2006 .

AlGaN/GaN Field Effect Schottky Barrier Diode for a Low Loss Switching Device

H. Takehara, T. Wada, Jiang Li, 2004 .

Graded‐GaAs1−xPx bases in heterojunction bipolar transistors with InGaP emitters

N. Ikeda, M. Ohkubo, T. Ninomiya, 1996 .

Graded-GaAs/sub 1-x/P/sub x/ base in heterojunction bipolar transistors with InGaP emitters

N. Ikeda, M. Ohkubo, T. Ninomiya, 1995, Seventh International Conference on Indium Phosphide and Related Materials.

High power AlGaN/GaN HFETs on 4 inch Si substrates

Jiang Li, N. Ikeda, T. Kokawa, 2009 .

Low On-Voltage Operation GaN Based Field Effect Schottky Barrier Diode(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))

Jiang Li, Takahiro Wada, Hironari Takehara, 2004 .

573 K operation AlGaN/GaN HFET with enhancement operation on Si substrate

Jiang Li, N. Ikeda, S. Yoshida, 2005 .

Switching Characteristics of GaN HFETs in a Half Bridge Package for High Temperature Applications

S. Yoshida, M. Masuda, T. Nomura, 2008, IEEE Transactions on Power Electronics.

Compositionally graded C-doped In/sub 1-x/Ga/sub x/As base in InP/InGaAs D-HBTs grown by MOCVD with low base sheet resistance and high current gain

N. Ikeda, M. Ohkubo, T. Ninomiya, 1997, Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials.

Proposal and simulated results of a normally off AlGaN/GaN HFET structure with a charged floating gate

Jiang Li, N. Ikeda, H. Kambayashi, 2009 .

GaN Power Transistors on Si Substrates for Switching Applications

Yoshihiro Sato, Nariaki Ikeda, Yuki Niiyama, 2010, Proceedings of the IEEE.

High power AlGaN/GaN HFET with a high breakdown voltage of over 1.8 kV on 4 inch Si substrates and the suppression of current collapse

S. Yoshida, Jiang Li, N. Ikeda, 2008, 2008 20th International Symposium on Power Semiconductor Devices and IC's.

Development Status of New Material Power Devices

Atsushi Hiraiwa, Nariaki Ikeda, Koji Yano, 2017 .

High Temperature Operation AlGaN/GaN HFET with a low on-state resistance, a high breakdown voltage and a fast switching capacity

S. Yoshida, M. Masuda, N. Ikeda, 2006, 2006 IEEE International Symposium on Power Semiconductor Devices and IC's.