Y. Satoh

发表

Over 100 A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage

Hiroshi Kambayashi, Sadahiro Kato, Takehiko Nomura, 2010 .

C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE

Seikoh Yoshida, Sadahiro Kato, Yoshihiro Satoh, 2007 .

Enhancement-mode GaN hybrid MOS-HFETs on Si substrates with Over 70 A operation

Yuki Niiyama, Hiroshi Kambayashi, T. Paul Chow, 2009, 2009 21st International Symposium on Power Semiconductor Devices & IC's.

Buffer breakdown voltage of AlGaN/GaN HFET on a 4 inch Si(111) substrate grown by MOCVD

M. Iwami, H. Sasaki, S. Yoshida, 2007 .

A cogeneration system for a heavy-snow fall zone based on aquifer thermal energy storage

Y. Satoh, H. Umemiya, 1990 .

High field-effect mobility normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate by selective area growth technique

N. Ikeda, H. Kambayashi, Y. Satoh, 2011 .

C-Face Interface Defects in 4H-SiC MOSFETs Studied by Electrically Detected Magnetic Resonance

T. Umeda, T. Ohshima, S. Harada, 2014 .

(Invited) SiC MOS Interface States: Similarity and Dissimilarity from Silicon

T. Umeda, T. Ohshima, H. Okamoto, 2012 .

Normally-off GaN MOSFETs on Silicon Substrates with High-temperature Operation

M. Iwami, H. Kambayashi, Y. Satoh, 2009 .

Enhancement Mode GaN MOSFETs on Silicon Substrates with High Field-effect Mobility

M. Iwami, S. Ootomo, H. Kambayashi, 2008 .

Voltage Gain in GaAs-Based Lateral Single-Electron Transistors Having Schottky Wrap Gates

H. Hasegawa, Y. Satoh, K. Jinushi, 1999 .

Conductance oscillation characteristics of GaAs Schottky wrap-gate single-electron transistors

H. Hasegawa, Y. Satoh, S. Kasai, 1999 .

Comparison of Impact Ionization Current between PMOS and NMOS

Y. Satoh, H. Matsumoto, Kazutoshi Miyamoto, 1984 .

Carrier concentration dependence of electronic and magnetic properties of Sn-doped GaMnAs

Y. Satoh, J. Yoshino, A. Nagashima, 2001 .

Normally Off n-Channel GaN MOSFETs on Si Substrates Using an SAG Technique and Ion Implantation

S. Yoshida, Y. Niiyama, Y. Satoh, 2007, IEEE Electron Device Letters.

Instrument for Creating Surface Layer Structure and for in-situ Layer Observation with Surface Electron Spectroscopic Tomography

K. Yoshihara, Y. Satoh, S. Ichimura, 1995 .

Indicator to Mechanical Design of Vibration Isolation and Damping by Mechanical Models

Y. Satoh, 2016 .