T. Kachi

发表

GaN power device and reliability for automotive applications

T. Kachi, T. Uesugi, T. Kachi, 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).

Recent progress of GaN power devices for automotive applications

T. Kachi, 2014 .

Experimental Validation of Normally-On GaN HEMT and Its Gate Drive Circuit

T. Hashizume, E. Hiraki, T. Kachi, 2015, IEEE Transactions on Industry Applications.

A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor

T. Kachi, T. Uesugi, M. Kanechika, 2007 .

Automotive Applications of GaN Power Devices

Tetsu Kachi, Tsutomu Uesugi, Masakazu Kanechika, 2011, 2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

Impacts of high temperature annealing above 1400° C under N2 overpressure to activate acceptors in Mg-implanted GaN

M. Boćkowski, J. Suda, T. Kachi, 2020, 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Advanced SiC and GaN power electronics for automotive systems

T. Kachi, T. Uesugi, M. Kanechika, 2010, 2010 International Electron Devices Meeting.

GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching

Tetsu Kachi, Masahiro Sugimoto, Tsutomu Uesugi, 2008 .

Experimental validation of newly fabricated normally-on GaN high-electron-mobility transistor

Tetsu Kachi, Masayuki Okamoto, Eiji Hiraki, 2013, 2013 IEEE Energy Conversion Congress and Exposition.

Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam

A. Uedono, M. Boćkowski, S. Chichibu, 2020, Scientific Reports.

Atomic resolution structural analysis of magnesium segregation at a pyramidal inversion domain in a GaN epitaxial layer

M. Nagao, T. Kachi, N. Ikarashi, 2019, Applied Physics Express.

Inductively coupled plasma-induced defects in n-type GaN studied from Schottky diode characteristics

T. Kachi, Y. Tokuda, H. Ueda, 2006 .

Dislocation etch pits in GaN epitaxial layers grown on sapphire substrates

T. Kozawa, M. Koike, T. Kachi, 1996 .

Encapsulant-Dependent Effects of Long-Term Low-Temperature Annealing on Interstitial Defects in Mg-Ion-Implanted GaN

T. Kachi, M. Akazawa, S. Murai, 2022, Journal of Electronic Materials.

Dual-color-sub-bandgap-light-excited isothermal capacitance transient spectroscopy for quick measurement of carbon-related hole trap density in n-type GaN

T. Kimoto, J. Suda, T. Kachi, 2020, Japanese Journal of Applied Physics.

Impact of channel mobility on design optimization of 600–3300 V-class high-speed GaN vertical-trench MOSFETs based on TCAD simulation

J. Suda, T. Kachi, T. Ishida, 2021, Applied Physics Express.

Improvement of channel property of GaN vertical trench MOSFET by compensating nitrogen vacancies with nitrogen plasma treatment

J. Suda, T. Kachi, T. Uesugi, 2020, Applied Physics Express.

Design and Fabrication of GaN p-n Junction Diodes With Negative Beveled-Mesa Termination

T. Kimoto, J. Suda, T. Kachi, 2019, IEEE Electron Device Letters.

Sources of carrier compensation in metalorganic vapor phase epitaxy-grown homoepitaxial n-type GaN layers with various doping concentrations

T. Kimoto, J. Suda, T. Kachi, 2018 .

Effects of the sequential implantation of Mg and N ions into GaN for p-type doping

M. Boćkowski, J. Suda, T. Kachi, 2021, Applied Physics Express.

Enhanced activation of Mg ion-implanted GaN at decreasing annealing temperature by prolonging duration

M. Boćkowski, J. Suda, M. Nagao, 2020, Applied Physics Express.

Characteristic photocurrents in InGaN epitaxial layers coherently grown on GaN: a photovoltaic detector for 400 nm band

T. Kozawa, T. Kachi, O. Ishiguro, 2008 .

Effect of carrier drift-diffusion transport process on thermal quenching of photoluminescence in GaN

T. Hashizume, T. Kachi, M. Matys, 2021 .

Evaluation of dislocation‐related defects in GaN using deep‐level transient spectroscopy

T. Kachi, Kazuhiro Yoshida, Y. Tokuda, 2007 .

DLTS study of n-type GaN grown by MOCVD on GaN substrates

T. Kachi, Y. Tokuda, N. Soejima, 2006 .

High Speed GaN-based Green LED for POF

T. Kozawa, T. Kachi, S. Kato, 2005 .

Implantation temperature dependence of Si activation in AlGaN

Tetsu Kachi, Stephen J. Pearton, Y. Irokawa, 2006 .

Electrical activation characteristics of silicon-implanted GaN

Y. Irokawa, T. Kachi, Y. Nakano, 2005 .

Defect evolution in Mg ions implanted GaN upon high temperature and ultrahigh N2 partial pressure annealing: Transmission electron microscopy analysis

M. Boćkowski, J. Suda, T. Kachi, 2020 .

Progress on and challenges of p-type formation for GaN power devices

M. Boćkowski, J. Suda, T. Kachi, 2020 .

Low-temperature annealing behavior of defects in Mg-ion-implanted GaN studied using MOS diodes and monoenergetic positron beam

A. Uedono, T. Kachi, M. Akazawa, 2020, Japanese Journal of Applied Physics.

Reliability Evaluation of Al2O3 Deposited by Ozone-Based Atomic Layer Deposition on Dry-Etched n-Type GaN

T. Kachi, D. Kikuta, T. Uesugi, 2013 .

Interface Properties of Al2O3/n-GaN Structures with Inductively Coupled Plasma Etching of GaN Surfaces

T. Hashizume, T. Kachi, D. Kikuta, 2012 .

Why do electron traps at EC –0.6 eV have inverse correlation with carbon concentrations in n-type GaN layers?

J. Suda, T. Kachi, M. Horita, 2020, Japanese Journal of Applied Physics.

Overview of carrier compensation in GaN layers grown by MOVPE: toward the application of vertical power devices

J. Suda, M. Nagao, T. Kachi, 2019, Japanese Journal of Applied Physics.

Electric-field-induced simultaneous diffusion of Mg and H in Mg-doped GaN prepared using ultra-high-pressure annealing

M. Boćkowski, J. Suda, T. Kachi, 2019, Applied Physics Express.

Mg-implanted bevel edge termination structure for GaN power device applications

M. Boćkowski, J. Suda, T. Kachi, 2021 .

Activation characteristics of ion-implanted Si+ in AlGaN

F. Ren, Y. Irokawa, S. Pearton, 2005 .

Erratum: “Theoretical prediction of a self-forming gallium oxide layer at an n-type GaN/SiO2 interface”

K. Shiraishi, T. Kachi, D. Kikuta, 2018 .

GaN power device for automotive applications

T. Kachi, 2014, 2014 Asia-Pacific Microwave Conference.

THERMAL STRESS IN GAN EPITAXIAL LAYERS GROWN ON SAPPHIRE SUBSTRATES

T. Kozawa, K. Manabe, T. Kachi, 1995 .

Insight into interface electrical properties of metal–oxide–semiconductor structures fabricated on Mg-implanted GaN activated by ultra-high-pressure annealing

Heiji Watanabe, T. Kachi, Takuma Kobayashi, 2022, Applied Physics Letters.

Channeled implantation of magnesium ions in gallium nitride for deep and low-damage doping

T. Kachi, T. Nishimura, Kiyoji Ikeda, 2021 .

Design and demonstration of nearly-ideal edge termination for GaN p–n junction using Mg-implanted field limiting rings

M. Boćkowski, J. Suda, T. Kachi, 2021, Applied Physics Express.

Interface Properties of Al2O3/n-GaN Structures with Inductively Coupled Plasma Etching of GaN Surfaces

T. Hashizume, T. Kachi, D. Kikuta, 2012 .

Deposition of aluminum oxide layer on GaN using diethyl aluminum ethoxide as a precursor

T. Hashizume, T. Kachi, T. Uesugi, 2008 .

WIDE-BANDGAP SEMICONDUCTOR DEVICES FOR AUTOMOTIVE APPLICATIONS

T. Kachi, T. Uesugi, M. Sugimoto, 2007 .

Wide-Bandgap Semiconductor Devices for Automobile Applications

T. Kachi, T. Uesugi, M. Sugimoto, 2006 .

Depth profiling of surface damage in n-type GaN induced by inductively coupled plasma reactive ion etching using photo-electrochemical techniques

J. Suda, T. Kachi, Taketomo Sato, 2020, Applied Physics Express.

As-grown deep-level defects in n-GaN grown by metal–organic chemical vapor deposition on freestanding GaN

M. Hori, T. Kachi, T. Uesugi, 2012 .

Experimental test of CH3OH laser line assignments with competitive and cascade couplings

T. Kachi, S. Kon, 1982 .

Optically Pumped Far-Infrared Laser Lines in Deuterated Methyl Alcohol, CH3OD, CH2DOH, CHD2OH, CD3OH, CD3OD

T. Kachi, Y. Tsunawaki, M. Yamanaka, 1984 .

Study of etching‐induced damage in GaN by hard X‐ray photoelectron spectroscopy

T. Kachi, D. Kikuta, T. Uesugi, 2011 .

Theoretical prediction of a self-forming gallium oxide layer at an n-type GaN/SiO2 interface

K. Shiraishi, T. Kachi, D. Kikuta, 2018 .

Characteristics of SiO2/n-GaN interfaces with β-Ga2O3 interlayers

T. Jimbo, T. Kachi, Y. Nakano, 2003 .

Formation of highly vertical trenches with rounded corners via inductively coupled plasma reactive ion etching for vertical GaN power devices

J. Suda, T. Kachi, Y. Osada, 2021 .

Assignments of optically pumped CD3OH laser lines

T. Kachi, S. Kon, 1982 .

Excitation Spectra of the Visible Photoluminescence of Anodized Porous Silicon

T. Motohiro, Y. Takeda, T. Kachi, 1992 .

Electrical Properties of Metal–Insulator–Semiconductor Capacitors on Freestanding GaN Substrate

M. Ishiko, Eunhee Kim, T. Kachi, 2009 .

n-type doping characteristics of O-implanted GaN

T. Jimbo, T. Kachi, Y. Nakano, 2003 .

Defects in N/Ge coimplanted GaN studied by positron annihilation

T. Kachi, Y. Nakano, 2002 .

N/Ge Co-Implantation into GaN for N-Type Doping

T. Jimbo, T. Kachi, Y. Nakano, 2001 .

Effect of N/Ge co-implantation on the Ge activation in GaN

T. Kachi, Y. Nakano, 2001 .

Formation of helical dislocations in ammonothermal GaN substrate by heat treatment

S. Yamaguchi, T. Kachi, Y. Kimoto, 2016 .

Advanced GaN Power Devices for Automotive Applications

T. Kachi, 2013 .

Inversion behavior in thermally oxidized p-GaN metal–oxide–semiconductor capacitors

T. Jimbo, T. Kachi, Y. Nakano, 2003 .

Electrical properties of thermally oxidized p-GaN metal–oxide–semiconductor diodes

T. Jimbo, T. Kachi, Y. Nakano, 2003 .

State-of-the-art GaN vertical power devices

T. Kachi, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Si + Ion Implantation into GaN at Cryogenic Temperatures

F. Ren, Y. Irokawa, S. Pearton, 2005 .

Electrical characteristics of GaN implanted with Si + at elevated temperatures

F. Ren, Y. Irokawa, S. Pearton, 2005 .

Ion-channeling analysis for epitaxial YBa2Cu3Ox superconducting thin films by laser deposition

T. Kachi, M. Ohkubo, T. Noritake, 1989 .

n-type AlN layer by Si ion implantation

T. Kachi, M. Kanechika, 2006 .

Raman scattering from LO phonon‐plasmon coupled modes in gallium nitride

Tetsu Kachi, Takahiro Kozawa, Masafumi Hashimoto, 1994 .

Oxygen content control for as‐deposited YBa2Cu3Ox thin films by oxygen pressure during rapid cooling following laser deposition

T. Hioki, T. Kachi, M. Ohkubo, 1989 .

Epitaxial YBa2Cu3Ox thin films with x=6-7 by oxygen in-diffusion following laser deposition

T. Hioki, T. Kachi, M. Ohkubo, 1990 .

Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing

M. Boćkowski, T. Sekiguchi, Jun Chen, 2022, Journal of Applied Physics.

Absence of Oxygen-Vacancy-Related Deep Levels in the Amorphous Mixed Oxide (Al2O3)1−x(SiO2)x : First-Principles Exploration of Gate Oxides in GaN -Based Power Devices

K. Shiraishi, T. Kachi, D. Kikuta, 2020 .

Electrical properties of 3C-SiC layers grown on silicon substrates with a novel stress relaxation structure

Y. Irokawa, T. Kachi, M. Kodama, 2001 .

Growth of 3C-SiC Layers on Si Substrates with a Novel Stress Relaxation Structure

Y. Irokawa, T. Kachi, M. Kodama, 2001 .

Identification of origin of EC –0.6 eV electron trap level by correlation with iron concentration in n-type GaN grown on GaN freestanding substrate by metalorganic vapor phase epitaxy

J. Suda, T. Kachi, M. Horita, 2020, Applied Physics Express.

MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors

Guan-Ting Chen, Tetsu Kachi, M. Ishiko, 2004 .

A new buffer layer for high quality GaN growth by metalorganic vapor phase epitaxy

T. Kachi, K. Itoh, K. Tomita, 1998 .

Excess Carrier Lifetime Measurement for Plasma-Etched GaN by the Microwave Photoconductivity Decay Method

T. Kachi, M. Ichimura, M. Kanechika, 2007 .

Investigation of diethylarsine as a replacement for arsine in organometallic vapor‐phase epitaxy of GaAs

Hiroshi Ito, T. Kachi, S. Terada, 1990 .

Low‐pressure metalorganic vapor phase epitaxy of GaAs using monoethylarsine

T. Kachi, 1994 .

Annealing properties of vacancy-type defects in ion-implanted GaN studied by monoenergetic positron beams

A. Uedono, S. Ishibashi, Kazuki Ito, 2007 .

Hole traps in n‐GaN detected by minority carrier transient spectroscopy

T. Kachi, T. Uesugi, Y. Yamada, 2011 .

Contribution of the carbon-originated hole trap to slow decays of photoluminescence and photoconductivity in homoepitaxial n-type GaN layers

T. Kachi, T. Narita, K. Tomita, 2021 .

New Approach to Low-Temperature Epitaxial Growth of GaAs by Photostimulated Metalorganic Chemical Vapor Deposition

Hiroshi Ito, T. Kachi, S. Terada, 1988 .

Impact ionization coefficients and critical electric field in GaN

T. Kimoto, J. Suda, T. Kachi, 2021 .

Characterization of plasma etching damage on p-type GaN using Schottky diodes

T. Kachi, M. Ichimura, M. Kanechika, 2008 .

The trap states in lightly Mg-doped GaN grown by MOVPE on a freestanding GaN substrate

T. Kachi, Y. Tokuda, T. Narita, 2018 .

Reduction of plasma-induced damage in n-type GaN by multistep-bias etching in inductively coupled plasma reactive ion etching

T. Hashizume, J. Suda, T. Kachi, 2019, Applied Physics Express.

Defect Detection in Semiconductor Materials by Luminescence Analysis

T. Kachi, K. Hattori, M. Kanechika, 2019 .

Current deep-level transient spectroscopy investigation of acceptor levels in Mg-doped GaN

T. Kachi, Y. Nakano, 2001 .

Detection of defect levels in vicinity of Al2O3/p-type GaN interface using sub-bandgap-light-assisted capacitance–voltage method

T. Kachi, T. Narita, Taketomo Sato, 2022, Journal of Applied Physics.

Characterization of hole traps in MOVPE-grown p-type GaN layers using low-frequency capacitance deep-level transient spectroscopy

T. Kachi, Y. Tokuda, T. Narita, 2019, Japanese Journal of Applied Physics.

Shockley–Read–Hall lifetime in homoepitaxial p-GaN extracted from recombination current in GaN p–n+ junction diodes

T. Kimoto, J. Suda, T. Kachi, 2019, Japanese Journal of Applied Physics.

P-type doping of GaN by magnesium ion implantation

T. Kachi, T. Uesugi, T. Narita, 2016 .

Isochronal annealing study of Mg-implanted p-type GaN activated by ultra-high-pressure annealing

M. Boćkowski, J. Suda, T. Kachi, 2021, Applied Physics Express.

n-Type Doping Characteristics of O-Implanted AlGaN

T. Jimbo, K. Abe, T. Kachi, 2004 .

High-Temperature Annealing Behavior of p-Type Doping Characteristics in Mg-Doped GaN

T. Kachi, Y. Nakano, O. Fujishima, 2004 .

N-type implantation doping of GaN

T. Jimbo, T. Kachi, Y. Nakano, 2003 .

High Pressure Processing of Ion Implanted GaN

M. Boćkowski, T. Kachi, M. Turek, 2020 .

Mg-implanted vertical GaN junction barrier Schottky rectifiers with low on resistance, low turn-on voltage, and nearly ideal nondestructive breakdown voltage

J. Suda, T. Kachi, T. Uesugi, 2022, Applied Physics Letters.

Process engineering of GaN power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing

M. Boćkowski, J. Suda, T. Kachi, 2022, Journal of Applied Physics.

Leakage mechanisms in GaN-on-GaN vertical pn diodes

M. Uren, Martin Kuball, T. Kachi, 2018, Applied Physics Letters.

Characterization of Defects and Deep Levels for GaN Power Devices

T. Kachi, T. Narita, 2020 .

Study on leakage current of pn diode on GaN substrate at reverse bias

Tetsu Kachi, Masahiro Sugimoto, Tsutomu Uesugi, 2011 .

Future Challenges: Defects in GaN Power Devices due to Fabrication Processes

T. Kachi, T. Narita, 2020 .

Highly reliable AlSiO gate oxides formed through post-deposition annealing for GaN-based MOS devices

T. Kachi, D. Kikuta, T. Narita, 2020, Applied Physics Express.

Cathodoluminescence Study on Thermal Recovery Process of Mg‐Ion Implanted N‐Polar GaN

T. Kachi, T. Uesugi, T. Narita, 2018 .

Nitrogen-displacement-related electron traps in n-type GaN grown on a GaN freestanding substrate

J. Suda, T. Kachi, M. Horita, 2021 .

Mapping of ultra-high-pressure annealed n-GaN Schottky contacts using scanning internal photoemission microscopy

T. Kachi, K. Shiojima, H. Imabayashi, 2023, Materials Science in Semiconductor Processing.

Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation

A. Uedono, M. Boćkowski, J. Suda, 2022, Journal of Applied Physics.

Redistribution of Mg and H atoms in Mg-implanted GaN through ultra-high-pressure annealing

M. Boćkowski, J. Suda, T. Kachi, 2020, Applied Physics Express.

Quantitative investigation of the lateral diffusion of hydrogen in p-type GaN layers having NPN structures

T. Kachi, T. Narita, K. Tomita, 2018, Applied Physics Express.

Inhibition of Mg activation in p-type GaN caused by thin AlGaN capping layer and impact of designing hydrogen desorption pathway

Heiji Watanabe, T. Kachi, T. Shimura, 2021 .

Effect of C and B sequential implantation on the B acceptors in 4H–SiC

R. K. Malhan, T. Kachi, Y. Nakano, 2001 .

Effect of C/B sequential implantation on the B acceptors in 4H–SiC

R. K. Malhan, T. Kachi, Y. Nakano, 2000 .

Effect of C/B Sequential Implantation on the B Acceptors in 4H-SiC

R. K. Malhan, T. Kachi, Y. Nakano, 2000 .

Effect of annealing time and pressure on electrical activation and surface morphology of Mg-implanted GaN annealed at 1300 °C in ultra-high-pressure nitrogen ambient

M. Boćkowski, J. Suda, T. Kachi, 2021, Applied Physics Express.

Impact Ionization Coefficients in GaN Measured by Above- and Sub-Eg Illuminations for p−/n+ Junction

T. Kimoto, J. Suda, T. Kachi, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

Parallel-Plane Breakdown Fields of 2.8-3.5 MV/cm in GaN-on-GaN p-n Junction Diodes with Double-Side-Depleted Shallow Bevel Termination

T. Kimoto, J. Suda, T. Kachi, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

Effects of Hydrogen Incorporation on Mg Diffusion in GaN‐Doped with Mg Ions via Ultra‐High‐Pressure Annealing

A. Uedono, T. Kachi, T. Narita, 2022 .

Simulation of channeled implantation of magnesium ions in gallium nitride

T. Kachi, T. Nishimura, 2021, Applied Physics Express.

Loss evaluation of an AC-AC direct converter with a new GaN HEMT SPICE model

Tetsu Kachi, Masayuki Okamoto, Eiji Hiraki, 2011, 2011 IEEE Energy Conversion Congress and Exposition.

Measurement of avalanche multiplication utilizing Franz-Keldysh effect in GaN p-n junction diodes with double-side-depleted shallow bevel termination

T. Kimoto, J. Suda, T. Kachi, 2019, Applied Physics Letters.

Improvement of Current Collapse by Surface Treatment and Passivation Layer in p-GaN Gate GaN High-Electron-Mobility Transistors

T. Kachi, T. Uesugi, Koichi Nishikawa, 2013 .

Electrical Characterization of GaN p–n Junctions Grown on Freestanding GaN Substrates by Metal–Organic Chemical Vapor Deposition

T. Kachi, T. Uesugi, 2011 .

Resonant gate driver for normally-on GaN high-electron-mobility transistor

Toshihiko Tanaka, Tetsu Kachi, Masayuki Okamoto, 2013, 2013 IEEE ECCE Asia Downunder.

High current operation of GaN power HEMT

T. Kachi, M. Sugimoto, T. Uesugi, 2005, Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005..

Effects of a photo-assisted electrochemical etching process removing dry-etching damage in GaN

T. Kachi, T. Narita, Taketomo Sato, 2018, Japanese Journal of Applied Physics.

Breakdown Electric Field of GaN p+-n and p-n+ Junction Diodes With Various Doping Concentrations

T. Kimoto, J. Suda, T. Kachi, 2022, IEEE Electron Device Letters.

Effect of p-type activation ambient on acceptor levels in Mg-doped GaN

T. Kachi, Y. Nakano, O. Fujishima, 2004 .

Evidence of reduced interface states in Al2O3/AlGaN MIS structures via insertion of ex situ regrown AlGaN layer

A. Wakejima, Zenji Yatabe, A. Yamamoto, 2022, Applied Physics Express.

X-ray photoelectron spectroscopy study on effects of ultra-high-pressure annealing on surface of Mg-ion-implanted GaN

M. Boćkowski, T. Kachi, T. Narita, 2021 .

Franz-Keldysh effect in GaN p-n junction diode under high reverse bias voltage

T. Kimoto, J. Suda, T. Kachi, 2018, Applied Physics Letters.

Pressure Effect on Diffusion of Native Defects and Mg Impurity in Mg‐Ion‐Implanted GaN during Ultrahigh‐Pressure Annealing

M. Boćkowski, M. Nagao, T. Kachi, 2023, physica status solidi (RRL) – Rapid Research Letters.

Estimation of Impact Ionization Coefficient in GaN by Photomulitiplication Measurement Utilizing Franz-Keldysh Effect

T. Kimoto, J. Suda, T. Kachi, 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Depth Analyses of Mg‐Acceptor and Si‐Donor Concentrations in GaN by Combining Stepwise Etching and Photoluminescence

T. Kachi, T. Narita, K. Tomita, 2024, physica status solidi (b).

Investigation of gap states near conduction band edge in vicinity of interface between Mg-ion-implanted GaN and Al2O3 deposited after ultra-high-pressure annealing

M. Boćkowski, T. Kachi, T. Narita, 2023, Japanese Journal of Applied Physics.

Effects of Dosage Increase on Electrical Properties of Metal‐Oxide‐Semiconductor Diodes with Mg‐Ion‐Implanted GaN Before Activation Annealing

J. Suda, T. Kachi, T. Narita, 2019, physica status solidi (b).