D. Kikuta

发表

GaN power device and reliability for automotive applications

T. Kachi, T. Uesugi, T. Kachi, 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).

Experimental Validation of Normally-On GaN HEMT and Its Gate Drive Circuit

T. Hashizume, E. Hiraki, T. Kachi, 2015, IEEE Transactions on Industry Applications.

Experimental validation of newly fabricated normally-on GaN high-electron-mobility transistor

Tetsu Kachi, Masayuki Okamoto, Eiji Hiraki, 2013, 2013 IEEE Energy Conversion Congress and Exposition.

AlGaN/GaN High Electron Mobility Transistor with Thin Buffer Layers

Tao Wang, S. Sakai, D. Kikuta, 2003 .

Reliability Evaluation of Al2O3 Deposited by Ozone-Based Atomic Layer Deposition on Dry-Etched n-Type GaN

T. Kachi, D. Kikuta, T. Uesugi, 2013 .

Interface Properties of Al2O3/n-GaN Structures with Inductively Coupled Plasma Etching of GaN Surfaces

T. Hashizume, T. Kachi, D. Kikuta, 2012 .

Erratum: “Theoretical prediction of a self-forming gallium oxide layer at an n-type GaN/SiO2 interface”

K. Shiraishi, T. Kachi, D. Kikuta, 2018 .

Local atomic structure of the GaN-side of the Al2O3/GaN interface revealed by X-ray absorption spectroscopy

D. Kikuta, N. Takahashi, K. Kataoka, 2020, Applied Surface Science.

Interface Properties of Al2O3/n-GaN Structures with Inductively Coupled Plasma Etching of GaN Surfaces

T. Hashizume, T. Kachi, D. Kikuta, 2012 .

Study of etching‐induced damage in GaN by hard X‐ray photoelectron spectroscopy

T. Kachi, D. Kikuta, T. Uesugi, 2011 .

Theoretical prediction of a self-forming gallium oxide layer at an n-type GaN/SiO2 interface

K. Shiraishi, T. Kachi, D. Kikuta, 2018 .

Band offset of Al1−xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy

Tomohiko Mori, D. Kikuta, T. Narita, 2017 .

Metal/Al-doped ZnO ohmic contact for AlGaN/GaN high electron mobility transistor

Y. Ohno, M. Okada, D. Kikuta, 2004 .

Inductively Coupled Plasma Reactive Ion Etching with SiCl4 Gas for Recessed Gate AlGaN/GaN Heterostructure Field Effect Transistor

D. Kikuta, Y. Ohno, H. Kawai, 2007 .

Bulk GaN growth by direct synthesis method

S. Sakai, D. Kikuta, Katsushi Nishino, 2002 .

Absence of Oxygen-Vacancy-Related Deep Levels in the Amorphous Mixed Oxide (Al2O3)1−x(SiO2)x : First-Principles Exploration of Gate Oxides in GaN -Based Power Devices

K. Shiraishi, T. Kachi, D. Kikuta, 2020 .

Local atomic structure analysis of GaN surfaces via X-ray absorption spectroscopy by detecting Auger electrons with low energies.

D. Kikuta, N. Takahashi, K. Kataoka, 2019, Journal of synchrotron radiation.

Reliability issues of gate oxides and $p-n$ junctions for vertical GaN metal–oxide–semiconductor field-effect transistors (Invited)

J. Suda, D. Kikuta, T. Uesugi, 2023, 2023 IEEE International Reliability Physics Symposium (IRPS).

Analysis of channel mobility in GaN-based metal-oxide-semiconductor field-effect transistors

D. Kikuta, M. Horita, T. Narita, 2021 .

Highly reliable AlSiO gate oxides formed through post-deposition annealing for GaN-based MOS devices

T. Kachi, D. Kikuta, T. Narita, 2020, Applied Physics Express.

Thermal stability investigation of copper‐gate AlGaN/GaN high electron mobility transistors

Y. Naoi, D. Kikuta, Y. Ohno, 2003 .

Copper gate AlGaN/GaN HEMT with low gate leakage current

Y. Ohno, Y. Naoi, D. Kikuta, 2003, IEEE Electron Device Letters.

Schottky Barrier Height Determination by Capacitance-Voltage Measurement on n-GaN with Exponential Doping Profile

D. Kikuta, Y. Ohno, J. Ao, 2004 .

Temperature and Illumination Dependence of AlGaN/GaN HFET Threshold Voltage

Yasuo Ohno, Jin-Ping Ao, Masaya Okada, 2006, IEICE Trans. Electron..

Gate leakage and electrical performance of AlGaN/GaN MIS-type HFET with evaporated silicon oxide layer

D. Kikuta, Y. Ohno, J. Ao, 2006 .