T. Uesugi

发表

GaN power device and reliability for automotive applications

T. Kachi, T. Uesugi, T. Kachi, 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).

A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor

T. Kachi, T. Uesugi, M. Kanechika, 2007 .

Automotive Applications of GaN Power Devices

Tetsu Kachi, Tsutomu Uesugi, Masakazu Kanechika, 2011, 2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

Identification of type of threading dislocation causing reverse leakage in GaN p–n junctions after continuous forward current stress

S. Yamaguchi, J. Suda, T. Uesugi, 2022, Scientific Reports.

Advanced SiC and GaN power electronics for automotive systems

T. Kachi, T. Uesugi, M. Kanechika, 2010, 2010 International Electron Devices Meeting.

GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching

Tetsu Kachi, Masahiro Sugimoto, Tsutomu Uesugi, 2008 .

A new type of SiC-VJFET with extreme low feedback capacitance

T. Uesugi, T. Ishikawa, Koichi Nishikawa, 2013, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Temperature characteristics of a new 100V rated power MOSFET, VLMOS (vertical LOCOS MOS)

T. Uesugi, M. Kodama, E. Hayashi, 2004, 2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs.

Three-dimensional current collapse imaging of AlGaN/GaN high electron mobility transistors by electric field-induced optical second-harmonic generation

T. Uesugi, T. Ishikawa, M. Iwamoto, 2016 .

Current collapse imaging of Schottky gate AlGaN/GaN high electron mobility transistors by electric field-induced optical second-harmonic generation measurement

T. Uesugi, T. Ishikawa, M. Iwamoto, 2014 .

A concept of SOI RESURF lateral devices with striped trench electrodes

T. Uesugi, T. Uesugi, M. Kanechika, 2005, IEEE Transactions on Electron Devices.

Improvement of channel property of GaN vertical trench MOSFET by compensating nitrogen vacancies with nitrogen plasma treatment

J. Suda, T. Kachi, T. Uesugi, 2020, Applied Physics Express.

Design and Fabrication of GaN p-n Junction Diodes With Negative Beveled-Mesa Termination

T. Kimoto, J. Suda, T. Kachi, 2019, IEEE Electron Device Letters.

Sources of carrier compensation in metalorganic vapor phase epitaxy-grown homoepitaxial n-type GaN layers with various doping concentrations

T. Kimoto, J. Suda, T. Kachi, 2018 .

Growth and characteristics of low dislocation density GaN grown on Si(111) from a single process

T. Uesugi, X. Chen, 2006 .

Reliability Evaluation of Al2O3 Deposited by Ozone-Based Atomic Layer Deposition on Dry-Etched n-Type GaN

T. Kachi, D. Kikuta, T. Uesugi, 2013 .

Interface Properties of Al2O3/n-GaN Structures with Inductively Coupled Plasma Etching of GaN Surfaces

T. Hashizume, T. Kachi, D. Kikuta, 2012 .

Mg-implanted bevel edge termination structure for GaN power device applications

M. Boćkowski, J. Suda, T. Kachi, 2021 .

Design and demonstration of nearly-ideal edge termination for GaN p–n junction using Mg-implanted field limiting rings

M. Boćkowski, J. Suda, T. Kachi, 2021, Applied Physics Express.

Interface Properties of Al2O3/n-GaN Structures with Inductively Coupled Plasma Etching of GaN Surfaces

T. Hashizume, T. Kachi, D. Kikuta, 2012 .

Deposition of aluminum oxide layer on GaN using diethyl aluminum ethoxide as a precursor

T. Hashizume, T. Kachi, T. Uesugi, 2008 .

WIDE-BANDGAP SEMICONDUCTOR DEVICES FOR AUTOMOTIVE APPLICATIONS

T. Kachi, T. Uesugi, M. Sugimoto, 2007 .

Wide-Bandgap Semiconductor Devices for Automobile Applications

T. Kachi, T. Uesugi, M. Sugimoto, 2006 .

As-grown deep-level defects in n-GaN grown by metal–organic chemical vapor deposition on freestanding GaN

M. Hori, T. Kachi, T. Uesugi, 2012 .

Study of etching‐induced damage in GaN by hard X‐ray photoelectron spectroscopy

T. Kachi, D. Kikuta, T. Uesugi, 2011 .

Increase of reverse leakage current at homoepitaxial GaN p-n junctions induced by continuous forward current stress

J. Suda, J. Kojima, T. Uesugi, 2021, Applied Physics Letters.

Growth of crack‐free GaN on maskless Si(111) by MOVPE

T. Uesugi, X. Chen, 2005 .

Hole traps in n‐GaN detected by minority carrier transient spectroscopy

T. Kachi, T. Uesugi, Y. Yamada, 2011 .

Mechanism of Residue Formation in Silicon Trench Etching Using a Bromine-Based Plasma

T. Uesugi, T. Hayakawa, Y. Mitsushima, 1998 .

Shockley–Read–Hall lifetime in homoepitaxial p-GaN extracted from recombination current in GaN p–n+ junction diodes

T. Kimoto, J. Suda, T. Kachi, 2019, Japanese Journal of Applied Physics.

P-type doping of GaN by magnesium ion implantation

T. Kachi, T. Uesugi, T. Narita, 2016 .

Mg-implanted vertical GaN junction barrier Schottky rectifiers with low on resistance, low turn-on voltage, and nearly ideal nondestructive breakdown voltage

J. Suda, T. Kachi, T. Uesugi, 2022, Applied Physics Letters.

Shallow angle implantation for extended trench gate power MOSFETs with super junction structure

T. Uesugi, M. Kodama, Y. Hattori, 2001, Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216).

Reliability issues of gate oxides and $p-n$ junctions for vertical GaN metal–oxide–semiconductor field-effect transistors (Invited)

J. Suda, D. Kikuta, T. Uesugi, 2023, 2023 IEEE International Reliability Physics Symposium (IRPS).

Study on leakage current of pn diode on GaN substrate at reverse bias

Tetsu Kachi, Masahiro Sugimoto, Tsutomu Uesugi, 2011 .

Analysis of intrinsic reverse leakage current resulting from band-to-band tunneling in dislocation-free GaN p–n junctions

S. Yamaguchi, J. Suda, J. Kojima, 2021, Applied Physics Express.

Cathodoluminescence Study on Thermal Recovery Process of Mg‐Ion Implanted N‐Polar GaN

T. Kachi, T. Uesugi, T. Narita, 2018 .

Parallel-Plane Breakdown Fields of 2.8-3.5 MV/cm in GaN-on-GaN p-n Junction Diodes with Double-Side-Depleted Shallow Bevel Termination

T. Kimoto, J. Suda, T. Kachi, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

Measurement of avalanche multiplication utilizing Franz-Keldysh effect in GaN p-n junction diodes with double-side-depleted shallow bevel termination

T. Kimoto, J. Suda, T. Kachi, 2019, Applied Physics Letters.

Improvement of Current Collapse by Surface Treatment and Passivation Layer in p-GaN Gate GaN High-Electron-Mobility Transistors

T. Kachi, T. Uesugi, Koichi Nishikawa, 2013 .

Electrical Characterization of GaN p–n Junctions Grown on Freestanding GaN Substrates by Metal–Organic Chemical Vapor Deposition

T. Kachi, T. Uesugi, 2011 .

Degradation analysis and current collapse imaging of AlGaN/GaN HEMTs by measurement of electric field-induced optical second-harmonic generation

Hiroyuki Ueda, Tsuyoshi Ishikawa, Tsutomu Uesugi, 2014, Microelectron. Reliab..

High current operation of GaN power HEMT

T. Kachi, M. Sugimoto, T. Uesugi, 2005, Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005..

New 3-D lateral power MOSFETs with ultra low on-resistance

Y. Murase, T. Uesugi, K. Nakashima, 1998, Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).

Effects of proton irradiation-induced point defects on Shockley–Read–Hall recombination lifetimes in homoepitaxial GaN p–n junctions

J. Suda, T. Uesugi, T. Oka, 2023, Applied Physics Letters.

Franz-Keldysh effect in GaN p-n junction diode under high reverse bias voltage

T. Kimoto, J. Suda, T. Kachi, 2018, Applied Physics Letters.

Estimation of Impact Ionization Coefficient in GaN by Photomulitiplication Measurement Utilizing Franz-Keldysh Effect

T. Kimoto, J. Suda, T. Kachi, 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).