Tian-Li Wu

Sayeem Bin Kutub, Tian-Li Wu, Shun-Wei Tang, 2020, 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).

Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic

Tian-Li Wu, Shun-Wei Tang, Hong-Jia Jiang, 2020, Micromachines.

Bias- and temperature-assisted trapping/de-trapping of ron degradation in D-mode AlGaN/GaN MIS-HEMTs on a Si substrate

E. Chang, Po-Chien Chou, Tian-Li Wu, 2017, 2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).

Demonstration of p-GaN/AlGaN/GaN High Electron Mobility Transistors With an Indium–Tin–Oxide Gate Electrode

Chih-Fang Huang, Tian-Li Wu, W. Kuo, 2021, IEEE Journal of the Electron Devices Society.

Analysis of the subthreshold characteristics in AlGaN/GaN HEMTs with a p-GaN gate

Tian-Li Wu, Szu-Chia Chen, Shun-Wei Tang, 2021, Microelectronics Reliability.

A novel photonic modulator based on an AlGaN/GaN High Electron Mobility Transistor (HEMT)

Tian-Li Wu, Pallabi Das, S. Tallur, 2019, 1907.07545.

Impacts of material parameters on breakdown voltage and location for power MOSFETs

K. Kao, Yeong-Her Wang, Tian-Li Wu, 2022, Journal of Computational Electronics.

Relaxation analysis to understand positive bias induced trapping in ferroelectric FETs with Si and Gd dopants

B. O’Sullivan, J. van Houdt, G. Van den bosch, 2022, Microelectronics Reliability.

Investigation of the passivation-induced VTH shift in p-GaN HEMTs with Au-free gate-first process

K. Kao, Tian-Li Wu, Cheng-Hung Wu, 2021, Microelectronics Reliability.

Silicon Nitride-induced Threshold Voltage Shift in p-GaN HEMTs with Au-free Gate-first Process

K. Kao, Tian-Li Wu, Shun-Wei Tang, 2020, 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).

Demonstration of Annealing-free Metal-Insulator-Semiconductor (MIS) Ohmic Contacts on a GaN Substrate using Low Work-function Metal Ytterbium (Yb) and Al2O3 Interfacial Layer

K. Kao, Chih-Fang Huang, Tian-Li Wu, 2019, 2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).

H-Bridge Derived Topology for Dynamic On-Resistance Evaluation in Power GaN HEMTs

Amit Verma, Tian-Li Wu, S. Anand, 2023, IEEE Transactions on Industrial Electronics.

Comprehensive Investigation of the Switching Stability in SiC and GaN Power Devices

Tian-Li Wu, Shun-Wei Tang, Chao-Ta Fan, 2022, 2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).

Simulation Study of 4H-SiC Trench MOSFETs with Various Gate Structures

Chih-Fang Huang, Tian-Li Wu, F. Zhao, 2019, 2019 Electron Devices Technology and Manufacturing Conference (EDTM).

Trapping and Reliability Assessment in D-Mode GaN-Based MIS-HEMTs for Power Applications

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2014, IEEE transactions on power electronics.

Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2015, Microelectron. Reliab..

Trapping mechanisms in GaN‐based MIS‐HEMTs grown on silicon substrate

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2015 .

Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics

Guido Groeseneken, Denis Marcon, Stefaan Decoutere, 2015 .

Reliability Analysis of Permanent Degradations on AlGaN/GaN HEMTs

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2013, IEEE Transactions on Electron Devices.

Gate Stability of GaN-Based HEMTs with P-Type Gate

Gaudenzio Meneghesso, Niels Posthuma, Denis Marcon, 2016 .

Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress

Guido Groeseneken, Denis Marcon, Stefaan Decoutere, 2014, Microelectron. Reliab..

Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs

Guido Groeseneken, Denis Marcon, Stefaan Decoutere, 2015, 2015 IEEE International Reliability Physics Symposium.

Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2016, Microelectron. Reliab..

Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

Guido Groeseneken, Niels Posthuma, Denis Marcon, 2015, IEEE Electron Device Letters.

Comprehensive investigation of on-state stress on D-mode AlGaN/GaN MIS-HEMTs

S. Decoutere, M. Van Hove, G. Groeseneken, 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

Impact of the polarization on time-dependent dielectric breakdown in ferroelectric Hf0.5Zr0.5O2 on Ge substrates

Yao-Jen Lee, C. Su, K. Kao, 2020, Japanese Journal of Applied Physics.

Machine Learning-Based Statistical Approach to Analyze Process Dependencies on Threshold Voltage in Recessed Gate AlGaN/GaN MIS-HEMTs

Tian-Li Wu, Sayeem Bin Kutub, Tian-Li Wu, 2020, IEEE Transactions on Electron Devices.

BEOL-Compatible Multiple Metal-Ferroelectric-Metal (m-MFM) FETs Designed for Low Voltage (2.5 V), High Density, and Excellent Reliability

P. Tzeng, T. Hou, W. Lo, 2020, 2020 IEEE International Electron Devices Meeting (IEDM).

Effects of Annealing on Ferroelectric Hafnium–Zirconium–Oxide-Based Transistor Technology

C. Hu, C. Su, Tian-Li Wu, 2019, IEEE Electron Device Letters.

Improved TDDB Reliability and Interface States in 5-nm Hf0.5Zr0.5O2 Ferroelectric Technologies Using NH3 Plasma and Microwave Annealing

C. Hu, C. Su, Tian-Li Wu, 2020, IEEE Transactions on Electron Devices.

Gamma‐Ray Irradiation Effect on Ferroelectric Devices with Hafnium Aluminum Oxides

Jun Ma, Chien Liu, H. Hsu, 2019, physica status solidi (RRL) – Rapid Research Letters.

Design and analysis of high electron mobility transistor inspired: III-V electro-optic modulator topologies

Tian-Li Wu, Pallabi Das, S. Tallur, 2019, Semiconductor Science and Technology.

Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology

Denis Marcon, Marleen Van Hove, Brice De Jaeger, 2015, Photonics West - Optoelectronic Materials and Devices.

Demonstration of MOCVD-grown Ga2O3 power MOSFETs on sapphire with in-situ Si-doped by tetraethyl orthosilicate (TEOS)

R. Horng, Tian-Li Wu, Sheng-Ti Chung, 2023, Discover Nano.

Electrical performance study of Schottky barrier diodes using ion implanted β-Ga2O3 epilayers grown on sapphire substrates

H. Kuo, R. Horng, D. Wuu, 2023, Materials Today Advances.

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Guido Groeseneken, Jacopo Franco, Denis Marcon, 2015 .

High temperature behaviour of GaN-on-Si high power MISHEMT devices

Denis Marcon, Dirk Wellekens, Stefaan Decoutere, 2012, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

A Novel Physics-Based Approach to Analyze and Model E-Mode p-GaN Power HEMTs

M. Meneghini, C. de Santi, Tian-Li Wu, 2021, IEEE Transactions on Electron Devices.

Artificial Neural Network-Based (ANN) Approach for Characteristics Modeling and Prediction in GaN-on-Si Power Devices

Sayeem Bin Kutub, Tian-Li Wu, Wen-Jay Lee, 2020, 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Time-dependent dielectric breakdown of gate oxide on 4H-SiC with different oxidation processes

B. Tsui, C. Chien, Tian-Li Wu, 2021 .

Fully Transparent AlGaN/GaN High Electron Mobility Transistors Fabricated With Indium-Tin-Oxide Electrodes

Chih-Fang Huang, Tian-Li Wu, C. Hsu, 2021, IEEE Electron Device Letters.

Using Graph Attention Network to Reversely Design GaN MIS-HEMTs Based on Hand-Drawn Characteristics

Tian-Li Wu, Nan-Yow Chen, Wei-Cheng Lin, 2023, IEEE Access.

Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate

Gaudenzio Meneghesso, Denis Marcon, Enrico Zanoni, 2016, Microelectron. Reliab..

ON-State Human Body Model ESD Failure Mechanisms in GaN-on-Si RF MIS-HEMTs

N. Collaert, B. Parvais, M. Ker, 2023, IEEE Electron Device Letters.

Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN/GaN high electron mobility transistors on 200 mm Si substrates

S. Decoutere, B. de Jaeger, N. Ronchi, 2015 .

Demonstration of Large Polarization in Si-doped HfO2 Metal–Ferroelectric–Insulator-Semiconductor Capacitors with Good Endurance and Retention

Tian-Li Wu, K. Seidel, T. Kämpfe, 2023, 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT).

The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate

Guido Groeseneken, Denis Marcon, Marleen Van Hove, 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Toward Understanding Thickness Dependence on Dielectric Breakdown Mechanism Under Forward Gate Bias in 4H-SiC MOS Technologies

Chih-Fang Huang, Tian-Li Wu, Pin-Wei Huang, 2023, IEEE Transactions on Electron Devices.

Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs

S. Decoutere, D. Wellekens, Tian-Li Wu, 2023, IEEE Transactions on Electron Devices.

Stability of wireless power transfer using gamma-ray irradiated GaN power HEMTs

H. Hsu, Tian-Li Wu, D. Chao, 2021, Microelectronics Reliability.

Effects of γ-Ray Irradiation on AlGaN/GaN Heterostructures and High Electron Mobility Transistor Devices

Tian-Li Wu, Rajendra Singh, D. Chao, 2020, Journal of Electronic Materials.

Investigation of the degradations in power GaN-on-Si MIS-HEMTs subjected to cumulative γ-ray irradiation

M. Meneghini, G. Meneghesso, E. Zanoni, 2019, Microelectronics Reliability.

Understanding $\gamma$ -Ray Induced Instability in AlGaN/GaN HEMTs Using a Physics-Based Compact Model

M. Meneghini, G. Meneghesso, E. Zanoni, 2020, IEEE Transactions on Electron Devices.

Ultra-Fast Positive Gate Bias Stress (<100ns) to Understand the Hole Injection in Power p-GaN HEMTs

S. Decoutere, D. Wellekens, Tian-Li Wu, 2023, 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

High Threshold Voltage Enhancement-Mode Regrown p-GaN Gate HEMTs With a Robust Forward Time-Dependent Gate Breakdown Stability

S. Decoutere, B. de Jaeger, D. Wellekens, 2022, IEEE Electron Device Letters.

Evidence of Hot-Electron Degradation in GaN-Based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress

Gaudenzio Meneghesso, Enrico Zanoni, Marleen Van Hove, 2016, IEEE Electron Device Letters.

Multiple-State Nonvolatile Memory Based on Ultrathin Indium Oxide Film via Liquid Metal Printing.

Tian-Li Wu, Kuan-Hung Chen, Yi-Chieh Chou, 2023, ACS applied materials & interfaces.

3510-V 390-$\hbox{m}\Omega\cdot\hbox{cm}^{2}$ 4H-SiC Lateral JFET on a Semi-Insulating Substrate

Tian-Li Wu, Meng-Chia Lee, F. Zhao, 2009, IEEE Electron Device Letters.

Study on the effects of Si implantation on the interface of 4H-SiC lateral MOSFETs

Chih-Fang Huang, Tian-Li Wu, Pin-Wei Huang, 2020, Japanese Journal of Applied Physics.

Numerical Study of 4H-SiC UMOSFETs with Split-Gate and P+ Shielding

Chih-Fang Huang, Tian-Li Wu, F. Zhao, 2020 .

A New Methodology to Precisely Induce Wake-Up for Reliability Assessment of Ferroelectric Devices

K. Pey, N. Raghavan, Tian-Li Wu, 2023, 2023 IEEE International Reliability Physics Symposium (IRPS).