Y. Ishida

发表

Quartz crystal microbalance for real-time monitoring chlorosilane gas transport in slim vertical cold wall chemical vapor deposition reactor

S. Hara, Toshinori Takahashi, Mana Otani, 2020 .

Real time evaluation of silicon epitaxial growth process by exhaust gas measurement using quartz crystal microbalance

S. Hara, Mitsuko Muroi, Miya Matsuo, 2018, Materials Science in Semiconductor Processing.

Advantages of a slim vertical gas channel at high SiHCl3 concentrations for atmospheric pressure silicon epitaxial growth

S. Hara, Mitsuko Muroi, Kenta Irikura, 2018, Materials Science in Semiconductor Processing.

Transport phenomena in a slim vertical atmospheric pressure chemical vapor deposition reactor utilizing natural convection

Ning Li, S. Hara, Mitsuko Muroi, 2017 .

Reflector Influence on Rapid Heating of Minimal Manufacturing Chemical Vapor Deposition Reactor

Ning Li, S. Hara, Hitoshi Habuka, 2016 .

Epitaxial growth and characterization of thick multi-layer 4H-SiC for very high-voltage insulated gate bipolar transistors

H. Tsuchida, K. Kojima, Y. Ishida, 2015 .

Proposal of the mechanism for inclination growth on a mesa top during the 4H-SiC trench filling epitaxy

Y. Ishida, 2017 .

The growth of low resistivity, heavily Al-doped 4H–SiC thick epilayers by hot-wall chemical vapor deposition

H. Tsuchida, K. Kojima, H. Okumura, 2013 .

Electrical Characterization at Cubic AlN/GaN Heterointerface Grown by Radio‐Frequency Plasma‐Assisted Molecular Beam Epitaxy

M. Shimizu, S. Chichibu, H. Okumura, 2001 .

Growth and characterization of cubic InGaN epilayers on 3C-SiC by RF MBE

S. Chichibu, H. Okumura, T. Ide, 2001 .

Recombination dynamics of localized excitons in cubic InxGa1−xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C–SiC substrate

Shuji Nakamura, S. P. DenBaars, Hajime Okumura, 2003 .

Arsenic surfactant effects and arsenic mediated molecular beam epitaxial growth for cubic GaN

G. Feuillet, H. Okumura, Y. Ishida, 1998 .

Pressure Coefficients of the Light Emission in Cubic InGaN Epilayers and Cubic InGaN/GaN Quantum Wells

H. Okumura, Y. Ishida, P. Perlin, 2002 .

Investigation of antiphase domain annihilation mechanism in 3C–SiC on Si substrates

H. Okumura, Y. Ishida, S. Yoshida, 2003 .

Effect of Ar post-oxidation annealing on oxide-4H-SiC interfaces studied by capacitance to voltage measurements and photoemission spectroscopy

Y. Ishida, Y. Hijikata, H. Yaguchi, 2005 .

Photoemission Spectroscopic Studies on Oxide/SiC Interfaces Formed by Dry and Pyrogenic Oxidation

T. Kamiya, Y. Ishida, Y. Hijikata, 2004 .

Characterization of Oxide Films on SiC by Spectroscopic Ellipsometry

Y. Tomioka, H. Okumura, Y. Ishida, 2000 .

Suppressing Al memory effect on CVD growth of 4H-SiC epilayers by adding hydrogen chloride gas

H. Tsuchida, K. Kojima, H. Okumura, 2013 .

Development of a Practical High-Rate CVD System

H. Okumura, Tetsuo Takahashi, Y. Ishida, 2008 .

Effect of Reduced Pressure on 3C‐SiC Heteroepitaxial Growth on Si by CVD

H. Okumura, Tetsuo Takahashi, Y. Ishida, 2006 .

Growth of cubic III-nitrides by gas source MBE using atomic nitrogen plasma: GaN, AlGaN and AlN

S. Chichibu, M. Arita, H. Okumura, 1998 .

Sensitive Detection of Defects in α and β SiC by Raman Scattering

H. Okumura, Tetsuo Takahashi, Y. Ishida, 2002 .

Detection of defects in SiC crystalline films by Raman scattering

H. Okumura, Y. Ishida, S. Nakashima, 2001 .

Hopping conduction range of heavily Al-doped 4H-SiC thick epilayers grown by CVD

H. Tsuchida, K. Kojima, H. Okumura, 2015 .

Experiment on alleviating the bending of CVD-grown heavily Al-doped 4H-SiC epiwafer by codoping of N

H. Tsuchida, K. Kojima, H. Okumura, 2015 .

Epitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBT

H. Tsuchida, K. Kojima, Y. Ishida, 2014 .

Low Resistivity, Thick Heavily Al-Doped 4H-SiC Epilayers Grown by Hot-Wall Chemical Vapor Deposition

H. Tsuchida, K. Kojima, H. Okumura, 2013 .

Suppression of Al Memory-Effect on Growing 4H-SiC Epilayers by Hot-Wall Chemical Vapor Deposition

H. Tsuchida, K. Kojima, H. Okumura, 2012 .

Characterization of the Defect Evolution in Thick Heavily Al-Doped 4H-SiC Epilayers

H. Tsuchida, K. Kojima, H. Okumura, 2014 .

Influence of Growth Conditions and Substrate Properties on Formation of Interfacial Dislocations and Dislocation Half-loop Arrays in 4H-SiC(0001) and (000-1) Epitaxy

H. Tsuchida, I. Kamata, K. Kojima, 2008 .

In situ Observation of Clusters in Gas Phase during 4H-SiC Epitaxial Growth by Chemical Vapor Deposition Method

H. Okumura, Tetsuo Takahashi, Y. Ishida, 2004 .

Spontaneous Ignition Temperature and Burning Velocity Just after the Ignition in the SHS Process for Ti-Al System with Rectangular Shape

Y. Ishida, A. Makino, Shin'ichi Kitabayashi, 2012 .

HREM-studies of the microstructure of nanocrystalline palladium

Y. Ishida, W. Wunderlich, R. Maurer, 1990 .

The Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Cubic Silicon Carbide

T. Kamiya, T. Ohshima, K. Kojima, 2003 .

Dependence of stacking fault and twin densities on deposition conditions during 3C-SiC heteroepitaxial growth on on-axis Si(0 0 1) substrates

H. Okumura, Tetsuo Takahashi, Y. Ishida, 2006 .

Metal Fluorides Produced Using Chlorine Trifluoride Gas

Hitoshi Habuka, Y. Ishida, T. Ohno, 2015 .

Raman studies on phonon modes in cubic AlGaN alloy

F. Bechstedt, H. Okumura, H. Harima, 1999 .

Relationship between the Current Direction in the Inversion Layer and the Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors on 3C-SiC

T. Ohshima, T. Kamiya, K. Kojima, 2004 .

Influence of inn mole fraction on the recombination processes of localized excitons in strained cubic InxGa1-xN/GaN multiple quantum wells

Shuji Nakamura, S. P. DenBaars, Hajime Okumura, 2003 .

Localized exciton dynamics in strained cubic In0.1Ga0.9N/GaN multiple quantum wells

A. Tackeuchi, T. Onuma, T. Sota, 2001 .

Band gap bowing and exciton localization in strained cubic InxGa1-xN films grown on 3C-SiC (001) by rf molecular-beam epitaxy

S. Denbaars, S. Nakamura, A. Tackeuchi, 2001 .

OPTICAL CHARACTERIZATION OF CUBIC ALGAN EPILAYERS BY CATHODOLUMINESCENCE AND SPECTROSCOPIC ELLIPSOMETRY

H. Okumura, Y. Ishida, H. Yaguchi, 1999 .

Different pressure coefficients of the light emission in cubic and hexagonal InGaN/GaN quantum wells

S. Chichibu, H. Okumura, Y. Ishida, 2002 .

Optical Constants of Cubic GaN, AlN, and AlGaN Alloys

H. Okumura, Y. Ishida, H. Yaguchi, 2000 .

Reductions of twin and protrusion in 3C-SiC heteroepitaxial growth on Si(100)

H. Okumura, Tetsuo Takahashi, T. Mitani, 2006 .

Atomic and Electronic Structures of Grain Boundary in Chemical Vapor Deposited Diamond Thin Film

Yuegang Zhang, Kunio Ito, Y. Ishida, 1995 .

Pre-Growth Treatment of 4H-SiC Substrates by Hydrogen Etching at Low Pressure

H. Okumura, Tetsuo Takahashi, Y. Ishida, 2000 .

Proposal of quasi thermal equilibrium model for etching phenomenon by gases: Example of the etching of 4H-SiC by H2

Y. Ishida, S. Yoshida, 2014 .

Experimental Verification of the Cluster Effect on Giant Step Bunching on 4H-SiC (0001) Surfaces

H. Okumura, Tetsuo Takahashi, Y. Ishida, 2010 .

Origin of Giant Step Bunching on 4H-SiC (0001) Surfaces

H. Okumura, Tetsuo Takahashi, Y. Ishida, 2008 .

Shape Transformation of 4H-SiC Microtrenches by Hydrogen Annealing

T. Yatsuo, Yasunori Tanaka, Y. Ishida, 2009 .

Proposal of the Thermal Equilibrium Model for SiC Hydrogen Etching Phenomena

H. Okumura, Tetsuo Takahashi, Y. Ishida, 2006 .

Atomically Flat 3C-SiC Epilayers by Low Pressure Chemical Vapor Deposition

T. Sekigawa, H. Okumura, Tetsuo Takahashi, 1997 .

Measurements of the Depth Profile of the Refractive Indices in Oxide Films on SiC by Spectroscopic Ellipsometry

Y. Tomioka, Y. Ishida, Y. Hijikata, 2002 .

Investigation of giant step bunching in 4H-SiC homoepitaxial growth: Proposal of cluster effect model

Y. Ishida, S. Yoshida, 2015 .

Uniformity of 4H–SiC epitaxial layers grown on 3-in diameter substrates

K. Kojima, Tetsuo Takahashi, Y. Ishida, 2003 .

Simulation Studies on Giant Step Bunching Accompanying Trapezoid-Shape Defects in 4H-SiC Epitaxial Layer

Y. Ishida, S. Yoshida, 2014 .

Optical properties of cubic InGaN/GaN multiple quantum wells on 3C-SiC substrates by radio-frequency plasma-assisted molecular beam epitaxy

M. Shimizu, Y. Suzuki, S. Chichibu, 2001 .

Growth and characterization of cubic AlGaN and AlN epilayers by RF-plasma assisted MBE

Tsuyoshi Inoue, H. Okumura, H. Harima, 1999 .

Reduction of defects propagating into 3C-SiC homoepilayers by reactive ion etching of 3C-SiC heteroepilayer substrates

H. Okumura, Tetsuo Takahashi, Y. Ishida, 2007 .

Characterization of p-type 4H-SiC epitaxial layer grown on (11-20) substrate

Y. Ishida, K. Arai, Takaya Suzuki, 2001 .

Investigation of the Relationship between Defects and Electrical Properties of 3C-SiC Epilayers

H. Okumura, Tetsuo Takahashi, Y. Ishida, 2002 .

Comparative Study of Heteroepitaxially and Homoepitaxially Grown 3C-SiC Films

H. Tsuchida, I. Kamata, H. Okumura, 2002 .

3C-SiC(100) Homoepitaxial Growth by Chemical Vapor Deposition and Schottky Barrier Junction Characteristics

H. Okumura, Tetsuo Takahashi, Y. Ishida, 2002 .

Influence of stacking faults on the performance of 4H–SiC Schottky barrier diodes fabricated on (112̄0) face

K. Kojima, N. Ohtani, M. Katsuno, 2002 .

Epitaxial Growth of (11-20) 4H-SiC Using Substrate Grown in the [11-20] Direction

K. Fukuda, J. Senzaki, K. Kojima, 2002 .

High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor

K. Kojima, Tetsuo Takahashi, Y. Ishida, 2002 .

S. Denbaars, A. Tackeuchi, U. Mishra, 2001 .

N-channel MOSFETs fabricated on homoepitaxy-grown 3C-SiC films

T. Kamiya, T. Ohshima, K. Kojima, 2003, IEEE Electron Device Letters.

Influence of C/Si Ratio on the 4H-SiC (0001) Epitaxial Growth and a Keynote for High-Rate Growth

K. Kojima, H. Okumura, Tetsuo Takahashi, 2004 .

The APD Annihilation Mechanism of 3C-SiC Hetero-Epilayer on Si(001) Substrate

T. Sekigawa, H. Okumura, Tetsuo Takahashi, 2000 .

Investigation of the giant step bunching induced by the etching of 4H-SiC in Ar–H2 mix gases

Y. Ishida, S. Yoshida, 2016 .

Repetition of In Situ Cleaning Using Chlorine Trifluoride Gas for Silicon Carbide Epitaxial Reactor

Hitoshi Habuka, Y. Ishida, Kosuke Mizuno, 2016 .

In Situ Cleaning Process of Silicon Carbide Epitaxial Reactor

Hitoshi Habuka, Y. Ishida, Kosuke Mizuno, 2015 .

Cleaning process applicable to silicon carbide chemical vapor deposition reactor

Hitoshi Habuka, Y. Ishida, Kosuke Mizuno, 2014 .

Cleaning Process for Using Chlorine Trifluoride Gas Silicon Carbide Chemical Vapor Deposition Reactor

Hitoshi Habuka, Y. Ishida, Kosuke Mizuno, 2015 .

Boron-Silicon Thin Film Formation Using a Slim Vertical Chemical Vapor Deposition Reactor

S. Hara, Hitoshi Habuka, Y. Ishida, 2023, Advances in Chemical Engineering and Science.

Quartz Crystal Microbalances for Evaluating Gas Motion Differences between Dichlorosilane and Trichlorosilane in Ambient Hydrogen in a Slim Vertical Cold Wall Chemical Vapor Deposition Reactor

S. Hara, Toshinori Takahashi, Hitoshi Habuka, 2020, Advances in Chemical Engineering and Science.

4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition

K. Kojima, H. Okumura, Tetsuo Takahashi, 2004 .

Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor

Tetsuo Takahashi, Y. Ishida, K. Arai, 2002 .

Optical and structural studies in InGaN quantum well structure laser diodes

T. Mukai, T. Sota, S. Chichibu, 2001 .

Growth and Characterization of Thick Multi-Layer 4H-SiC Epiwafer for Very High-Voltage p-Channel IGBTs

H. Tsuchida, K. Kojima, Y. Ishida, 2015 .

Simulation Studies on Giant Step Bunching in 4H-SiC Epitaxial Growth: Cluster Effect

Y. Ishida, S. Yoshida, 2014 .

Competitive Growth between Deposition and Etching in 4H-SiC CVD Epitaxy Using Quasi-Hot Wall Reactor

H. Okumura, Tetsuo Takahashi, Y. Ishida, 2000 .

Negative Hall coefficient in band conduction region in heavily Al-doped 4H-SiC

Y. Ishida, S. Ji, Atsuki Hidaka, 2023, Journal of Applied Physics.

Coimplantation Effects of (C and Si)/Ga in 6H-SiC

Yasunori Tanaka, H. Okumura, H. Tanoue, 2000 .

Two-Dimensional Roughness Growth at Surface and Interface of SiO2 Films during Thermal Oxidation of 4H-SiC(0001)

K. Yamabe, Y. Ishida, R. Hasunuma, 2012 .

Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition

K. Kojima, Tetsuo Takahashi, Y. Ishida, 2002 .