V. D. Kunz

A 50nm channel vertical MOSFET concept incorporating a retrograde channel and a dielectric pocket

P. Ashburn, S. Hall, C. D. de Groot, 2001, 31st European Solid-State Device Research Conference.

Design of 50-nm vertical MOSFET incorporating a dielectric pocket

P. Ashburn, V.D. Kunz, D. Donaghy, 2004, IEEE Transactions on Electron Devices.

Recent developments in deca-nanometer vertical MOSFETs

Steve Hall, Octavian Buiu, Peter Ashburn, 2004 .

Polycrystalline silicon-germanium emitters for gain control, with application to SiGe HBTs

Steve Hall, Peter Ashburn, P. Ashburn, 2003 .

Reduction of parasitic capacitance in vertical MOSFETs by spacer local oxidation

Steve Hall, Peter Ashburn, P.L.F. Hemment, 2003 .

Single, double and surround gate vertical MOSFETs with reduced parasitic capacitance

Steve Hall, Peter Ashburn, E. Gili, 2004 .

CMOS compatible vertical surround gate mosfets with reduced parasitics

Veit Dominik Kunz, V. D. Kunz, 2003 .