P. Mur

发表

Single electron charging effect in individual Si nanocrystals.

T. Baron, P. Gentile, N. Magnea, 2000 .

Silicon quantum dot nucleation on Si3N4, SiO2 and SiOxNy substrates for nanoelectronic devices

Thierry Baron, François Martin, P. Mur, 2000 .

Using silicon nanostructures for the improvement of silicon solar cells' efficiency

G. Guillot, M. Lemiti, P. Mur, 2006 .

Imaging a dense nanodot assembly by phase retrieval from TEM images.

M. Verdier, P. Donnadieu, P. Mur, 2004, Ultramicroscopy.

How far will silicon nanocrystals push the scaling limits of NVMs technologies?

G. Ghibaudo, D. Ielmini, S. Deleonibus, 2003, IEEE International Electron Devices Meeting 2003.

A 20-nm physical gate length NMOSFET featuring 1.2 nm gate oxide, shallow implanted source and drain and BF2 pockets

G. Guegan, S. Deleonibus, F. Martin, 2000, IEEE Electron Device Letters.

Towards silicon nanocrystals based solar cells: Morphological properties and conduction phenomena

P. Thony, D. Bellet, P. Mur, 2010, 2010 35th IEEE Photovoltaic Specialists Conference.

Study of self-limiting oxidation of silicon nanoclusters by atomistic simulations

P. Rivallin, T. Baron, J. Crocombette, 2002 .

Ultimate sub-25 nm gate length NMOSFETs transport at 293 and 77 K

F. Balestra, S. Deleonibus, C. Caillat, 2000 .

Development of an original model for the synthesis of silicon nanodots by Low Pressure Chemical Vapor Deposition

P. Mur, T. Billon, B. Caussat, 2008 .

Growth and characterization of LPCVD Si quantum dots on insulators

J. Hartmann, S. Lombardo, T. Baron, 2004 .

Influence of the Chemical Properties of the Substrate on Silicon Quantum Dot Nucleation

T. Baron, N. Rochat, P. Mur, 2003 .

Characterization of dual‐junction III‐V on Si tandem solar cells with 23.7% efficiency under low concentration

C. Dupré, A. Kaminski-Cachopo, J. Decobert, 2019, Progress in Photovoltaics: Research and Applications.

Influence of the oxide thickness on the SiO2/Si interface structure

V. Chamard, P. Donnadieu, P. Mur, 2008 .

Detection of subnanometric layer at the Si∕SiO2 interface and related strain measurements

N. Jakse, P. Donnadieu, P. Mur, 2004 .

Infrared analysis of thin layers by attenuated total reflection spectroscopy

P. Besson, N. Rochat, F. Bertin, 2003 .

Functionalization of 3-D Structures for Grafting of Biological Molecules

P. Mur, G. Delapierre, T. Billon, 2005 .

Silicon nanocrystals precipitation in a SiO/sub 2/ matrix elaborated from the decomposition of LPCVD SiO/sub x/

B. De Salvo, P. Mur, M. Semeria, 2002, Proceedings of the 2nd IEEE Conference on Nanotechnology.

Towards multiscale modeling of Si nanocrystals LPCVD deposition on SiO2: From ab initio calculations to reactor scale simulations

P. Blaise, P. Mur, B. Caussat, 2007 .

Modeling of Silicon Nanodots Nucleation and Growth Deposited by LPCVD on SiO2 : From Molecule/Surface Interactions to Reactor Scale Simulations

P. Blaise, P. Mur, B. Caussat, 2006 .

Metallic nano-crystals for flash memories

T. Baron, M. Gordon, P. Mur, 2007 .

Low pressure chemical vapor deposition growth of silicon quantum dots on insulator for nanoelectronics devices

Thierry Baron, C. Busseret, Abdelkader Souifi, 2000 .

Growth by Low Pressure Chemical Vapor Deposition of Silicon Quantum Dots on Insulator for Nanoelectronics Devices

G. Guillot, T. Baron, P. Mur, 1999 .

Influence of the synthesis conditions of silicon nanodots in an industrial low pressure chemical vapor deposition reactor

P. Mur, T. Billon, B. Caussat, 2008 .

Nucleation control of CVD growth silicon nanocrystals for quantum devices

F. Fournel, T. Baron, P. Gentile, 2002 .

Characterisation of trapped electric charge carriers behaviour at nanometer scale by electrostatic force microscopy

J. Chevrier, F. Marchi, F. Comin, 2008 .

Kinetic roughening of charge spreading in a two-dimensional silicon nanocrystal network detected by electrostatic force microscopy

J. Chevrier, F. Marchi, F. Comin, 2005 .

Single-electron charging effect in individual Si nanocrystals

Thierry Baron, Noël Magnea, P. Mur, 2001 .

A combined FEG-SEM and TEM study of silicon nanodot assembly

P. Donnadieu, P. Mur, B. Caussat, 2008 .

Performance and reliability features of advanced nonvolatile memories based on discrete traps (silicon nanocrystals, SONOS)

S. Deleonibus, M. Gely, P. Goarin, 2004, IEEE Transactions on Device and Materials Reliability.

Self-aligned nickel–platinum silicide oxidation

R. Beneyton, V. Carron, B. Imbert, 2008 .

Silicide pre-clean effects on NiPtSi thermal stability for 65nm technologies and beyond

R. Gwoziecki, D. Barge, B. Imbert, 2007 .

Charging dynamics and strong localization of a two-dimensional electron cloud

F. Marchi, F. Comin, P. Mur, 2007 .

Imaging of stored charges in Si quantum dots by tapping and electrostatic force microscopy

Joël Chevrier, Florence Marchi, N. Buffet, 2002 .

Ultra-thin oxides grown on silicon (1 0 0) by rapid thermal oxidation for CMOS and advanced devices

G. Ghibaudo, G. Reimbold, R. Clerc, 2001 .

Silicon nanostructures for DNA biochip applications

P. Mur, G. Delapierre, T. Billon, 2007 .

DNA microarrays on silicon nanostructures: optimization of the multilayer stack for fluorescence detection.

P. Mur, G. Delapierre, T. Billon, 2007, Biosensors & bioelectronics.

Attenuated total reflection spectroscopy for infrared analysis of thin layers on a semiconductor substrate

Névine Rochat, Amal Chabli, P. Mur, 2002 .

STM study of ultra-thin (<2 nm) silicon oxide

J. Eymery, J. Hartmann, P. Besson, 2003 .

Simultaneous observation of “Self Trapped Exciton” and Q-confined exciton luminescence emission in silicon nanocrystals

G. Guillot, P. Mur, N. Buffet, 2005 .

Enhanced Conduction in Si Quantum Dot Superlattice in SiO2 Matrix

D. Bellet, G. Carval, P. Mur, 2010 .

High density platinum nanocrystals for non-volatile memory applications

G. Molas, L. Vandroux, D. Lafond, 2008 .

Film-thickness-dependent conduction in ordered Si quantum dot arrays

P. Thony, D. Bellet, L. Vandroux, 2012, Nanotechnology.