Y. Ono

发表

Si complementary single-electron inverter with voltage gain

Yasuo Takahashi, Kenji Yamazaki, Kenji Kurihara, 2000 .

Electron aspirator using electron–electron scattering in nanoscale silicon

D. Moraru, Yasuo Takahashi, A. Fujiwara, 2018, Nature Communications.

Detection of single holes generated by impact ionization in silicon

D. Moraru, Yasuo Takahashi, A. Fujiwara, 2018, Applied Physics Letters.

Ultimately thin double-gate SOI MOSFETs

T. Ouisse, G. Ghibaudo, T. Ernst, 2003 .

Infrared detection with silicon nano-field-effect transistors

Yasuo Takahashi, H. Inokawa, A. Fujiwara, 2007 .

Single‐Electron Transistor and its Logic Application

Yasuo Takahashi, H. Inokawa, A. Fujiwara, 2010 .

Development of silicon single-electron devices

Yasuo Takahashi, H. Inokawa, A. Fujiwara, 2003 .

Single-electron counting statistics of shot noise in nanowire Si metal-oxide-semiconductor field-effect transistors

A. Fujiwara, K. Nishiguchi, Y. Ono, 2011 .

Pauli-spin-blockade transport through a silicon double quantum dot

H. Inokawa, A. Fujiwara, Y. Ono, 2007, 0707.3513.

Experimental validation of a microstrip antenna model for high-Tc superconducting terahertz emitters

Y. Ono, M. Tsujimoto, G. Kuwano, 2021 .

Design and characterization of microstrip patch antennas for high-Tc superconducting terahertz emitters.

W. Kwok, Y. Ono, M. Tsujimoto, 2021, Optics express.

Coherent Terahertz Radiation from Homogeneous Intrinsic Josephson Junction Stacks of Cuprate High-Temperature Superconductors

Y. Ono, M. Tsujimoto, G. Kuwano, 2019, 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz).

Improved excitation mode selectivity of high- T c superconducting terahertz emitters

Y. Ono, M. Tsujimoto, G. Kuwano, 2018, Journal of Applied Physics.

Full adder operation based on Si nanodot array device

Hiroshi Inokawa, Akira Fujiwara, Yasuo Takahashi, 2009, 2008 IEEE Silicon Nanoelectronics Workshop.

Si Nanodot Device Fabricated by Thermal Oxidation and their Applications

Yasuo Takahashi, H. Inokawa, A. Fujiwara, 2011 .

Carrier transport in indium-doped p-channel silicon-on-insulator transistors between 30 and 285 K

A. Fujiwara, G. P. Lansbergen, Y. Ono, 2011 .

Charge transport in boron-doped nano MOSFETs: Towards single-dopant electronics

Yasuo Takahashi, S. Horiguchi, H. Inokawa, 2008 .

Bound exciton photoluminescence from ion‑implanted phosphorus in thin silicon layers.

A. Fujiwara, M. Notomi, K. Nishiguchi, 2011, Optics express.

Sonochemical synthesis of Au/Pd nanoparticles on the surface of LiFePO₄/C cathode material for lithium-ion batteries

Takahiro Kato, K. Sugawara, Y. Ono, 2021, Japanese Journal of Applied Physics.

Conductance modulation by individual acceptors in Si nanoscale field-effect transistors

Yasuo Takahashi, H. Inokawa, A. Fujiwara, 2007 .

Quantized electron transfer through random multiple tunnel junctions in phosphorus-doped silicon nanowires

D. Moraru, M. Tabe, H. Inokawa, 2007 .

Study of Stability of A-few-donor Quantum Dots with Different Configurations for Room-Temperature Single-Electron Tunneling Operation

D. Moraru, H. Mizuta, M. Tabe, 2017 .

Turnstile Operation Using a Silicon Dual-Gate Single-Electron Transistor

Yasuo Takahashi, N. Zimmerman, K. Yamazaki, 2003 .

Fabrication of Si single-electron transistors with precise dimensions by electron-beam nanolithography

Kenji Yamazaki, Hideo Namatsu, A. Fujiwara, 2003 .

Valley polarization in Si(100) at zero magnetic field.

A. Fujiwara, Y. Ono, Y. Hirayama, 2006, Physical review letters.

Stochastic data processing circuit based on single electrons using nanoscale field-effect transistors

Yasuo Takahashi, H. Inokawa, A. Fujiwara, 2008 .

Subband structure and anomalous valley splitting in ultra-thin silicon-on-insulator MOSFET's

T. Ouisse, Yasuo Takahashi, S. Horiguchi, 1998 .

Magnetometry of neurons using a superconducting qubit

I. Mahboob, S. Saito, T. Teshima, 2022, Communications Physics.

Resonant escape over an oscillating barrier in a single-electron ratchet transfer

K. Itoh, A. Fujiwara, K. Nishiguchi, 2010, 1002.2422.

Anomalous resistance ridges along filling factor nu=4i.

A. Fujiwara, Y. Takahashi, Y. Ono, 2006, Physical review letters.

Tunable bandpass filters based on π -shifted mechanical long-period fibre gratings in two-mode fibres

K. Komori, Y. Ono, H. Sakata, 2015 .

Silicon single-electron devices

Hiroshi Inokawa, Yasuo Takahashi, Akira Fujiwara, 1999 .

Tunneling spectroscopy of electron subbands in thin silicon-on-insulator metal-oxide-semiconductor field-effect transistors

A. Fujiwara, K. Nishiguchi, Y. Ono, 2010 .

Silicon-Based, Tunable-Barrier Single Charge Sources

A. Fujiwara, Y. Takahashi, N. Zimmerman, 2004, 2004 Conference on Precision Electromagnetic Measurements.

Intersubband Scattering in Double-Gate MOSFETs

A. Fujiwara, Y. Takahashi, Y. Ono, 2006, IEEE Transactions on Nanotechnology.

Sonochemical Synthesis of Au Nanoparticles on LiFePO4/C and the Evaluation of Its Battery Performance

Takahiro Kato, K. Sugawara, Y. Ono, 2019, Journal of the Society of Powder Technology, Japan.

Electrons and holes in a 40 nm thick silicon slab at cryogenic temperatures

A. Fujiwara, K. Nishiguchi, Y. Ono, 2009 .

Why the long-term charge offset drift in Si single-electron tunneling transistors is much smaller (better) than in metal-based ones: Two-level fluctuator stability

M. Furlan, Yasuo Takahashi, H. Inokawa, 2008 .

Improved battery performance using Pd nanoparticles synthesized on the surface of LiFePO4/C by ultrasound irradiation

Takahiro Kato, K. Sugawara, Y. Ono, 2016 .

Single-electron quantization at room temperature in a-few-donor quantum dot in silicon nano-transistors

D. Moraru, H. Mizuta, M. Muruganathan, 2017 .

A gate-defined silicon quantum dot molecule

H. Inokawa, A. Fujiwara, Y. Ono, 2008 .

Origin of ferromagnetism of MnSi1.7 nanoparticles in Si: First-principles calculations

M. Nagase, A. Fujiwara, Y. Ono, 2008 .

Ferromagnetism of Manganese–Silicide Nanopariticles in Silicon

M. Nagase, A. Fujiwara, Y. Ono, 2008 .

Electrical activation and electron spin resonance measurements of arsenic implanted in silicon

A. Fujiwara, Y. Ono, M. Hori, 2015 .

Power enhancement of the high-Tc superconducting terahertz emitter with a modified device structure

Y. Ono, M. Tsujimoto, K. Kadowaki, 2019, Journal of Physics: Conference Series.

Manipulation and detection of single electrons for future information processing

Hiroshi Inokawa, Yasuo Takahashi, Akira Fujiwara, 2005 .

Identification of single and coupled acceptors in silicon nano-field-effect transistors

A. Fujiwara, K. Nishiguchi, Y. Ono, 2007 .

Identification of Single and Coupled Acceptors in Silicon Nano Field-Effect Transistors

A. Fujiwara, K. Nishiguchi, Y. Ono, 2007 .

Metal--semiconductor transition in single-walled carbon nanotubes induced by low-energy electron irradiation.

P. Ajayan, H. Inokawa, A. Vijayaraghavan, 2005, Nano letters.

Donor-based single electron pumps with tunable donor binding energy.

A. Fujiwara, G. P. Lansbergen, Y. Ono, 2012, Nano letters.

Escape dynamics of a few electrons in a single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor

K. Itoh, A. Fujiwara, K. Nishiguchi, 2008 .

Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor

A. Fujiwara, K. Nishiguchi, Y. Ono, 2008 .

Effect of UV/Ozone Treatment on Nanogap Electrodes for Molecular Devices

K. Torimitsu, M. Nagase, H. Inokawa, 2007 .

Thermal Agglomeration of Thin Single Crystal Si on SiO2 in Vacuum

M. Nagase, Y. Ono, Michiharu Tabe Michiharu Tabe, 1995 .

Capacitive Parameter Extraction for Nanometer-Size Field-Effect Transistors

H. Inokawa, A. Fujiwara, K. Nishiguchi, 2007 .

Current quantization due to single-electron transfer in Si-wire charge-coupled devices

Yasuo Takahashi, Akira Fujiwara, Yukinori Ono, 2004 .

Si Single-Electron Transistors with High Voltage Gain

Yasuo Takahashi, Yasuo Takahashi, Kenji Yamazaki, 2001 .

Fabrication of double-dot single-electron transistor in silicon nanowire

Yasuo Takahashi, H. Inokawa, A. Fujiwara, 2009, SDM 2009.

Horizontal position analysis of single acceptors in Si nanoscale field-effect transistors

A. Fujiwara, K. Nishiguchi, Y. Ono, 2009 .

Silicon nanodot-array device with multiple gates

Hiroshi Inokawa, Yasuo Takahashi, Kenji Yamazaki, 2008 .

Mechanism of metal-semiconductor transition in electric properties of single-walled carbon nanotubes induced by low-energy electron irradiation

Hiroshi Inokawa, Satoru Suzuki, Yoshihiro Kobayashi, 2007 .

Critical conductance of two-dimensional electron gas in silicon-on-insulator metal-oxide-semiconductor field-effect transistor

A. Fujiwara, Y. Ono, M. Hori, 2021, Applied Physics Express.

Detection of arsenic donor electrons using gate-pulse-induced spin-dependent recombination in silicon transistors

Y. Ono, M. Hori, 2021, Applied Physics Letters.

Coulomb-blockade transport in selectively-doped Si nano-transistors

D. Moraru, M. Tabe, Y. Ono, 2019, Applied Physics Express.

Charge Pumping Under Spin Resonance in Si(100) Metal-Oxide-Semiconductor Transistors

Y. Ono, M. Hori, 2019, Physical Review Applied.

Manipulation of Single Charges Using Dopant Atoms in Silicon—Interplay with Intervalley Phonon Emission

A. Fujiwara, G. P. Lansbergen, Y. Ono, 2017 .

Single-electron transport through single dopants in a dopant-rich environment.

D. Moraru, M. Tabe, Y. Ono, 2010, Physical review letters.

Charge offset stability in tunable-barrier Si single-electron tunneling devices

Yasuo Takahashi, H. Inokawa, A. Fujiwara, 2007 .

Photoluminescence from a Silicon Quantum Well Formed on Separation by Implanted Oxygen Substrate

Yasuo Takahashi, T. Furuta, T. Ishiyama, 1995 .

NbO as gate electrode for n-channel metal-oxide-semiconductor field-effect-transistors

J. F. Conley, Y. Ono, Wei Gao, 2004 .

Electron pump by a combined single-electron/field-effect- transistor structure

Yasuo Takahashi, Y. Ono, 2003 .

Observation and Circuit Application of Negative Differential Conductance in Silicon Single-Electron Transistors

Yasuo Takahashi, Y. Ono, 2002 .

Si complementary single-electron inverter

H. Namatsu, K. Kurihara, M. Nagase, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

Electrical Characterization of Terphenyl-Based Molecular Devices

K. Torimitsu, H. Inokawa, A. Fujiwara, 2011 .

EDMR on Recombination Process in Silicon MOSFETs at Room Temperature

Y. Ono, M. Hori, 2017 .

External Resonators and Antennas for the High-Tc Superconducting Terahertz Emitters

Y. Ono, M. Tsujimoto, K. Kadowaki, 2023, Proceedings of the 29th International Conference on Low Temperature Physics (LT29).