B. Gentinne

Measurement and two-dimensional simulation of thin-film SOI MOSFETs: Intrinsic gate capacitances at elevated temperatures

D. Flandre, J. Colinge, F. Wiele, 1996 .

Fully depleted SOI-CMOS technology for high temperature IC applications

Denis Flandre, Jean-Pierre Colinge, B. Gentinne, 1997 .

ased C,-Continuous Fully-Depleted SFET Model for Analog Applications

D. Flandre, B. Gentinne, L. Ferreira, 1996 .

Performances of Fully-Depleted Soi Analog Operational Amplifiers

P. Jespers, J. Colinge, B. Gentinne, 1992, 1992 IEEE International SOI Conference.

Extraction of physical device dimensions of SOI MOSFETs from gate capacitance measurements

D. Flandre, B. Gentinne, 1993 .

Measurement and modeling of thin-film accumulation-mode SOI p-MOSFET intrinsic gate capacitances

Denis Flandre, Jean-Pierre Colinge, B. Gentinne, 1996 .

Fully-Depleted SOI CMOS Technology for Low-Voltage Low-Power Mixed Digital/Analog/Microwave Circuits

J. P. Eggermont, A. Viviani, B. Gentinne, 1999 .