C. Gondran

发表

Quality of SOI film after surface smoothing with hydrogen annealing, touch-polishing

S. S. Iyer, W. Maszara, P. Vasudev, 1997, 1997 IEEE International SOI Conference Proceedings.

Automated nanoliter solution deposition for total reflection X-ray fluorescence analysis of semiconductor samples ☆

C. Gondran, G. Havrilla, C. Sparks, 2006 .

Atomic force microscope study of three-dimensional nanostructure sidewalls

M. Hussain, C. Gondran, D. Michelson, 2007 .

Sputter rate variations in silicon under high-k dielectric films

W. Vandervorst, J. Bennett, C. Gondran, 2004 .

On the reliability of SIMS depth profiles through HfO2-stacks

C. Huyghebaert, T. Conard, W. Vandervorst, 2004 .

SIMS depth profiling of advanced gate dielectric materials

P. Hung, J. Bennett, C. Gondran, 2003 .

Characterization of high-k gate dielectric and metal gate electrode semiconductor samples with a total reflection X-ray fluorescence spectrometer

J. Bennett, C. Gondran, B. Foran, 2004 .

Front and back side Auger electron spectroscopy depth profile analysis to verify an interfacial reaction at the HfN∕SiO2 interface

C. Gondran, K. Choi, Ch. Johnson, 2006 .

Electrical and materials properties of AlN/ HfO2 high-k stack with a metal gate

D. Gilmer, S. Samavedam, C. Gondran, 2009 .

X-ray reflectometry and x-ray fluorescence monitoring of the atomic layer deposition process for high-k gate dielectrics

H. Yeung, P. Hung, B. Bunday, 2005 .

Fin Sidewall Microroughness Measurement by AFM

Tsu-Jae King, Weize Xiong, Carolyn F. H. Gondran, 2004 .