W. Huang

Measurement of carrier generation lifetime in SOI devices

D. Schroder, M. Racanelli, Hyungcheol Shin, 1999 .

AC floating body effects and the resultant analog circuit issues in submicron floating body and body-grounded SOI MOSFET's

Ying-Che Tseng, Jason C. S. Woo, D. J. Monk, 1999 .

TFSOI complementary BiCMOS technology for low power RF mixed-mode applications

J. Babcock, M. Racanelli, H. Shin, 1996, Proceedings of Custom Integrated Circuits Conference.

Hyperabrupt-junction varactor for mmWave SiGe:C BiCMOS, enabling 77GHz VCO/TX with 13-15GHz tuning range

V. P. Trivedi, J. Kirchgessner, J. P. John, 2010, 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).

Integrity of gate oxide on TFSOI materials

S. R. Wilson, D. Schroder, M. Racanelli, 1995, 1995 IEEE International SOI Conference Proceedings.

Hot-carrier-injection (HCI) immunity under high drain stress of thin-film SOI n-MOSFETs fabricated on SIMOX and BESOI substrates

J. Woo, M. Racanelli, W.M. Huang, 1994, Proceedings. IEEE International SOI Conference.

ULSI-quality gate oxide on thin-film-silicon-on-insulator

C. Hu, C. Hu, M. Racanelli, 1993, Proceedings of IEEE International Electron Devices Meeting.

A 77GHz CMOS VCO with 11.3GHz tuning range, 6dBm output power, and competitive phase noise in 65nm bulk CMOS

Kun-Hin To, Vishal P. Trivedi, W. Margaret Huang, 2011, 2011 IEEE Radio Frequency Integrated Circuits Symposium.

Device and technology evolution for Si-based RF integrated circuits

H.S. Bennett, J.C. Costa, P.E. Cottrell, 2005, IEEE Transactions on Electron Devices.

Comprehensive study on low-frequency noise characteristics in surface channel SOI CMOSFETs and device design optimization for RF ICs

Ying-Che Tseng, W. M. Huang, M. Mendicino, 2001 .