A. Nazarov

发表

Substrate Bias Effect Linked to Parasitic Series Resistance in Multiple-Gate SOI MOSFETs

D. Flandre, N. Collaert, M. Jurczak, 2007, IEEE Electron Device Letters.

Electrical Instabilities in Silicon-on-Insulator Structures and Devices During Voltage and Temperature Stressing

I. P. Barchuk, V. Kilchytska, A. Nazarov, 2000 .

A review of special gate coupling effects in long-channel SOI MOSFETs with lightly doped ultra-thin bodies and their compact analytical modeling

D. Flandre, T. Rudenko, V. Kilchytska, 2016 .

Reduced electric field in junctionless transistors

Chi-Woo Lee, J. Colinge, R. Yan, 2010 .

Low subthreshold slope in junctionless multigate transistors

Chi-Woo Lee, J. Colinge, R. Yan, 2010 .

Methane as a novel doping precursor for deposition of highly conductive ZnO thin films by magnetron sputtering

Y. Gomeniuk, R. Yatskiv, A. Nazarov, 2020 .

Hydrogen and High-Temperature Charge Instability of SOI Structures and MOSFETs

A. Nazarov, 2005 .

Effect of Low Temperature RF Plasma Treatment on Electrical Properties of Junctionless InGaAs MOSFETs

V. I. Glotov, P. Hurley, Y. Gomeniuk, 2019, ECS Journal of Solid State Science and Technology.

Kinetics of structural and phase transformations in thin SiOx films in the course of a rapid thermal annealing

A. S. Tkachenko, V. Lysenko, A. Nazarov, 2005 .

An ammonia sensor composed of polypyrrole synthesized on reduced graphene oxide by electropolymerization

J. Raskin, Xiaohui Tang, M. Debliquy, 2020 .

Electrical properties and radiation hardness of SOI systems with multilayer buried dielectric

S. V. Djurenko, J. Colinge, V. Lysenko, 1997 .

Problems of Radiation Hardness of SOI Structures and Devices

A. Nazarov, 1995 .

Random telegraph-signal noise in junctionless transistors

J. Colinge, N. Akhavan, I. Ferain, 2011 .

Electron mobility in heavily doped junctionless nanowire SOI MOSFETs

S. Barraud, K. Cherkaoui, T. Rudenko, 2013 .

Electrical Characterization and Special Properties of FINFET Structures

Denis Flandre, Tamara Rudenko, Nadine Collaert, 2006 .

The effect of deposition processing on structural and luminescent properties of a-SiOC:H thin films fabricated by RF-magnetron sputtering

V. Lysenko, A. Nazarov, S. Prucnal, 2017 .

Broad band (UV-VIS) photoluminescence from carbonized fumed silica: Emission, excitation and kinetic properties

V. Lysenko, V. Tertykh, A. Nazarov, 2017 .

Excitation effects and luminescence stability in porous SiO2:C layers

V. Lysenko, A. Nazarov, J. Salonen, 2012 .

The nature of white luminescence in SiO2:C layers

V. Lysenko, A. Nazarov, J. Salonen, 2009 .

Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions

A. Nazarov, 2008 .

Correlation between defect-related electroluminescence and charge trapping in Gd-implanted SiO2 layers

I. N. Osiyuk, A. Nazarov, S. Prucnal, 2007 .

Amorphous SiO x C y (:Er) films deposited by RF-magnetron sputtering on ZrB 2 –SiC ceramics: Antioxidation and strengthening effects

A. Nazarov, J. Kopeček, A. Vasin, 2017, Surface and Coatings Technology.

Carbon-Rich Nanostructurated a-SiC on Si Heterostructures for Field-Effect Electron Emission

V. Lysenko, P. Lytvyn, A. Nazarov, 2013 .

A method for threshold voltage extraction in junctionless MOSFETs using the derivative of transconductance-to-current ratio

D. Flandre, S. Barraud, T. Rudenko, 2020, Solid-State Electronics.

On the Mobility Behavior in Highly Doped Junctionless Nanowire SOI MOSFETs

S. Barraud, K. Cherkaoui, T. Rudenko, 2013 .

Modification of electroluminescence and charge trapping in germanium implanted metal-oxide silicon light-emitting diodes with plasma treatment

A. Nazarov, 2005 .

Correlation of charge trapping and electroluminescence in highly efficient Si-based light emitters

I. N. Osiyuk, A. Nazarov, L. Rebohle, 2003 .

Effect of vacuum annealing on charge transport and trapping in a-Si1 − xCx:H/c-Si heterostructures

V. Lysenko, Y. Gomeniuk, S. Ashok, 2012 .

Field-effect mobility extraction in nanowire field-effect transistors by combination of transfer characteristics and random telegraph noise measurements

J. Colinge, N. Akhavan, I. Ferain, 2011 .

Extraction of channel mobility in nanowire MOSFETs using Id(Vg) characteristics and random telegraph noise amplitude

A. Kranti, R. Yan, N. Akhavan, 2011, Ulis 2011 Ultimate Integration on Silicon.

Structure, paramagnetic defects and light-emission of carbon-rich a-SiC:H films

V. Lysenko, A. Nazarov, Y. Ishikawa, 2008 .

Effect of electron beam irradiation on structural and electrical properties of graphene-SiO2-Si structures

D. Savchenko, P. Lytvyn, A. Nazarov, 2017, 2017 IEEE First Ukraine Conference on Electrical and Computer Engineering (UKRCON).

Graphene layers fabricated from the Ni/a-SiC bilayer precursor

V. Lashkaryov, A. Nazarov, 2013 .

Properties of MOS structures after B+ ion bombardment

V. Lysenko, A. Nazarov, A. Sachenko, 1976 .

Correlation between electroluminescence and charge trapping in multi-color Eu implanted Si-based light-emitting diodes

I. P. Tyagulskyy, J. Biskupek, U. Kaiser, 2009 .

Hydrogen plasma modification of shallow implanted Germanium layers

V. I. Glotov, V. Lysenko, R. Duffy, 2016, 2016 International Conference on Nanomaterials: Application & Properties (NAP).

RF plasma treatment of shallow ion-implanted layers of germanium

V. I. Glotov, V. Lysenko, R. Duffy, 2016 .

Raman scattering in ion-implanted silicon exposed to rf-plasma treatment

V. Lysenko, A. Nazarov, M. Valakh, 1990 .

Radio‐Frequency Plasma Treatment and Thermal Annealing in Implanted Si Raman Study

V. Lysenko, A. Nazarov, M. Valakh, 1990 .

Blue and red electroluminescence of Europium-implanted metal-oxide-semiconductor structures as a probe for the dynamics of microstructure

M. Helm, A. Kanjilal, A. Nazarov, 2008 .

Attribution of white-light emitting centers with carbonized surface in nano-structured SiO2:C layers

V. Lysenko, S. Muto, A. Nazarov, 2011 .

Rare Earth Ion Implantation for Silicon Based Light Emission

I. N. Osiyuk, M. Helm, A. Nazarov, 2005 .

EPR Study of Porous Si:C and SiO2:C Layers

D. Savchenko, S. Muto, A. Nazarov, 2018 .

The Effect of Incorporation of Hydrocarbon Groups on Visible Photoluminescence of Thermally Treated Fumed Silica

V. Lysenko, A. Nazarov, A. Vasin, 2016 .

Carbon-rich nanostructured a-SiC for cold emitters

V. Lysenko, P. Lytvyn, V. Stepanov, 2013, IEEE International Conference on Electronics and Nanotechnology.

High-frequency electron paramagnetic resonance study of the as deposited and annealed carbon-rich hydrogenated amorphous silicon-carbon films

V. Lysenko, D. Savchenko, A. Nazarov, 2008 .

Charge trapping in Si-implanted SiO2-Si memory devices at high electric fields and elevated temperatures

V. Lysenko, B. Garrido, A. Nazarov, 2005 .

Anomalous wear-out phenomena of europium-implanted light emitters based on a metal-oxide-semiconductor structure

M. Helm, A. Kanjilal, M. Voelskow, 2009 .

Electroluminescence, charge trapping and quenching in Eu implantes SiO2-Si structures

I. P. Tyagulskyy, V. Lysenko, A. Nazarov, 2009 .

Charge trapping phenomena in high-efficiency metal-oxide-silicon light-emitting diodes with ion-implanted oxide

I. N. Osiyuk, V. Lysenko, A. Nazarov, 2006 .

Comparative Study of Charge Trapping in High-Dose Si and Ge-Implanted Al / SiO2 / Si Structures

I. N. Osiyuk, V. Lysenko, A. Nazarov, 2005 .

Light-emitting properties of amorphous Si:C:O:H layers fabricated by oxidation of carbon-rich a-Si:C:H films

V. Lysenko, A. Nazarov, Y. Ishikawa, 2009 .

Paramagnetic Defects and Photoluminescence in Carbon Rich a-SiC:H Films: Role of Hydrogen and Excess of Carbon

V. Lysenko, S. Ashok, A. Nazarov, 2007 .

Correlation of nanostructure and charge transport properties of oxidized a ‐SiC:H films

V. Lysenko, A. Nazarov, A. Vasin, 2012 .

Charge transport, trapping and electroluminescence in erbium doped a-Si:H/n-Si light-emitting heterodiodes

V. Lysenko, E. Terukov, A. Nazarov, 2003 .

Liquid‐Phase Synthesis of Hydrophilic Luminescent Carbon Dots Using Porous Silica as a Nanotemplate

V. Tertykh, A. Nazarov, A. Vasin, 2021, physica status solidi (a).

Multiband light emission and nanoscale chemical analyses of carbonized fumed silica

V. Lysenko, M. Cannas, V. Tertykh, 2018, Journal of Applied Physics.

The correlation between electroluminescence properties and the microstructure of Europium-implanted MOS light emitting diodes

M. Helm, A. Kanjilal, A. Nazarov, 2009 .

Reactivation of damaged rare earth luminescence centers in ion-implanted metal–oxide–silicon light emitting devices

I. N. Osiyuk, A. Nazarov, L. Rebohle, 2008 .

Thermal reactivation of nonradiative recombination centers in hydrogenated AlxGa1-xAs:Si

A. S. Tkachenko, V. Ustinov, V. Lysenko, 1993 .

RF Plasma Annealing of Implanted MIS Structures

V. Lysenko, T. Rudenko, A. Nazarov, 1985, April 16.

Quenching of electroluminescence and charge trapping in high-efficiency Ge-implanted MOS light-emitting silicon diodes

I. N. Osiyuk, V. Lysenko, A. Nazarov, 2007 .

Charge trapping in light-emitting SiO2 layers implanted with Ge+ ions

I. N. Osiyuk, V. Lysenko, A. Nazarov, 2002 .

Total dose radiation response of multilayer buried insulators

S. V. Djurenko, V. Lysenko, T. Rudenko, 2000 .

Revision of interface coupling in ultra-thin body silicon-on-insulator MOSFETs

D. Flandre, V. Lysenko, T. Rudenko, 2013 .

Electrical Properties of High-K LaLuO3 Gate Oxide for SOI MOSFETs

P. Hurley, Y. Gomeniuk, J. Schubert, 2011 .

Special Features of the Back-Gate Effects in Ultra-Thin Body SOI MOSFETs

D. Flandre, J. Raskin, T. Rudenko, 2011 .

Thermally activated processes in the buried oxide of SIMOX SOI structures and devices

I. N. Osiyuk, I. P. Barchuk, V. Lysenko, 2001 .

High-temperature instability processes in SOI structures and MOSFETs

J. Colinge, A. Nazarov, V. Kilchytska, 2001 .

Study of the processes of carbonization and oxidation of porous silicon by Raman and IR spectroscopy

V. Lysenko, K. Kholostov, V. Bondarenko, 2011 .

Electroluminescent properties of Tb-doped carbon-enriched silicon oxide

M. Voelskow, A. Nazarov, L. Rebohle, 2014 .

Comparative study of annealing and oxidation effects in a-SiC:H and a-SiC thin films deposited by radio-frequency magnetron sputtering

V. Lysenko, S. Muto, A. Nazarov, 2011 .

Color control of white photoluminescence from carbon-incorporated silicon oxide

V. Lysenko, S. Muto, A. Nazarov, 2008 .

The advancement of silicon-on-insulator (SOI) devices and their basic properties

V. Lysenko, T. Rudenko, A. Nazarov, 2020 .

Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting

Denis Flandre, Valeriya Kilchytska, Alexei Nazarov, 2014 .

Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition

Gregory L. Snider, Alexei O. Orlov, Golnaz Karbasian, 2017 .

CdSSe quantum dots: effect of the hydrogen RF plasma treatment on exciton luminescence

A. S. Tkachenko, V. Lysenko, A. Nazarov, 2004 .

Semiconductor-On-Insulator Materials for Nanoelectronics Applications

Jean-Pierre Colinge, Jean-Pierre Raskin, V. S. Lysenko, 2011 .

Low-Temperature Reduction of Graphene Oxide: Electrical Conductance and Scanning Kelvin Probe Force Microscopy

O. Khyzhun, A. Nazarov, A. Nikolenko, 2018, Nanoscale Research Letters.

Carrier transport in amorphous SiC/crystalline silicon heterojunctions

V. Lysenko, S. Ashok, Ya.N. Vovk, 2001 .

Impedance spectroscopy of single graphene layer at gas adsorption

V. Lysenko, V. Skryshevsky, A. Nazarov, 2015 .

Micro-Raman spectroscopy and electrical conductivity of graphene layer on SiO2 dielectric subjected to electron beam irradiation

Y. Gomeniuk, P. Lytvyn, A. Nazarov, 2018, Materials Research Express.

RF Plasma Modification of Heavily Destroyed Ion Implanted Subsurface Silicon Layers

I. M. Zaritskii, V. Lysenko, A. Nazarov, 1989, September 16.

Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers

A. Nazarov, 2008 .

The effect of radio-frequency plasma treatment on the electroluminescent properties of violet light-emitting germanium implanted metal-oxide–semiconductor structures

I. N. Osiyuk, A. S. Tkachenko, V. Lysenko, 2005 .

EPR and TSCR investigations of implanted AlSiO2Si systems treated with RF plasma discharge

A. S. Tkachenko, I. M. Zaritskii, V. Lysenko, 1989 .

Manifestation of hydrogen in Al-SiO2-Si structures subjected to a RF plasma annealing

A. S. Tkachenko, V. Lysenko, A. Nazarov, 1989 .

Tv The charge trapping / emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures

V. V. Ulyanov, A. Nazarov, V. Ievtukh, 2016 .

Charge accumulation in the dielectric of the nanocluster NVM MOS structures under anti- and unipolar W/E window formation

Alexei Nazarov, Bernd Spangenberg, V. S. Lysenko, 2007, Microelectron. Reliab..

Charge trapping processes at memory window formation in single- and double nanocrystal layered NVMs

V. Lysenko, A. Nassiopoulou, A. Nazarov, 2013 .

Nanocluster NVM Cells Metrology: Window Formation, Relaxation and Charge Retention Measurements

V. Lysenko, A. Nazarov, V.A. Ievtukh, 2013 .

Physical and Technical Problems of SOI Structures and Devices

Jean-Pierre Colinge, V. S. Lysenko, Alexei Nazarov, 1995 .

Activation of the implanted impurity and transformation of radiation defects in oxidized silicon under RF plasma treatment

N. I. Shakhraychuk, V. Lysenko, A. Nazarov, 1992 .

Transformation of graphene flakes into carbon nanostructures by γ-irradiation

V. Lysenko, P. Lytvyn, A. Nazarov, 2017 .

Single electron transistors with hydrogen treatment of ALD SiO2 in nanoscale metal–insulator–metal tunnel junctions

Michael S. McConnell, A. Orlov, G. Snider, 2017, Nanotechnology.

Charge storage peculiarities in poly-Si-SiO2-Si memory devices with Si nanocrystals rich SiO2

V. S. Lysenko, A. N. Nazarov, V. I. Turchanikov, 2005, Microelectron. Reliab..

C-V and thermally activated investigations of ZMR SOI meza structures

V. A. Gusev, V. Lysenko, V. Kilchytska, 1994 .

Ion Beam Processing for Silicon - Based Light Emission

I. N. Osiyuk, M. Helm, B. Schmidt, 2003 .

Characterization of graphene layers by Kelvin probe force microscopy and micro-Raman spectroscopy

V. Lysenko, V. Strelchuk, V. Popov, 2013 .

Formation and Luminescent Properties of Al2O3:SiOC Nanocomposites on the Base of Alumina Nanoparticles Modified by Phenyltrimethoxysilane

V. Lysenko, V. Strelchuk, V. Tertykh, 2017, Nanoscale Research Letters.

Nanoscaled Semiconductor-on-Insulator Structures and Devices

V. S. Lysenko, Alexei Nazarov, V. Lysenko, 2007 .

On the mechanism of electroluminescence excitation in Er-doped SiO2 containing silicon nanoclusters

Thomas Dekorsy, Wolfgang Skorupa, Manfred Helm, 2005 .

Hydrogen effect on enhancement of defect reactions in semiconductors: example for silicon and vacancy defects

V. Lysenko, S. Rangan, S. Ashok, 2001 .

Quantum chemical investigations of atomic hydrogen effect on Frenkel pairs annihilation in silicon

V. Lysenko, A. Nazarov, T. V. Yanchuk, 1996 .

Hydrogen Enhanced Defect Reactions in Silicon: Interstitial Atom - Vacancy

V. Lysenko, A. Nazarov, T. V. Yanchuk, 1998 .

Mechanisms of interactions between atomic hydrogen and vacancies in the silicon crystal lattice

V. Lysenko, A. Nazarov, V. Kovalev, 1996 .

Enhanced recrystallization and dopant activation of P+ ion-implanted super-thin Ge layers by RF hydrogen plasma treatment

V. Lysenko, Y. Gomeniuk, R. Duffy, 2017 .

ENHANCED ACTIVATION OF IMPLANTED DOPANT IMPURITY IN HYDROGENATED CRYSTALLINE SILICON

V. Lysenko, S. Ashok, A. Nazarov, 1998 .

Flash Lamp Annealing and RF Plasma Annealing of AlSiO2Si Structures

A. S. Tkachenko, V. Lysenko, A. Nazarov, 1990 .

Enhanced activation of implanted phosphorus in silicon under rf plasma treatment

A. S. Tkachenko, N. I. Shakhraychuk, V. Lysenko, 1989 .

Carrier Mobility in Undoped Triple-Gate FinFET Structures and Limitations of Its Description in Terms of Top and Sidewall Channel Mobilities

V. Kilchytska, D. Flandre, N. Collaert, 2008, IEEE Transactions on Electron Devices.

On the MOSFET Threshold Voltage Extraction by Transconductance and Transconductance-to-Current Ratio Change Methods: Part I—Effect of Gate-Voltage-Dependent Mobility

V. Kilchytska, D. Flandre, J-P Raskin, 2011, IEEE Transactions on Electron Devices.

Influence of Gas Adsorption on the Impedance of Graphene Oxide

J. Raskin, V. Skryshevsky, A. Nazarov, 2019, 2019 IEEE 39th International Conference on Electronics and Nanotechnology (ELNANO).

On the MOSFET Threshold Voltage Extraction by Transconductance and Transconductance-to-Current Ratio Change Methods: Part II—Effect of Drain Voltage

V. Kilchytska, D. Flandre, A. Nazarov, 2011, IEEE Transactions on Electron Devices.

Interface and Bulk Properties of High-K Gadolinium and Neodymium Oxides on Silicon

H. Osten, V. Lysenko, Y. Gomeniuk, 2011 .

Transport and interface states in high-κ LaSiO x dielectric

P. Hurley, V. Lysenko, Y. Gomeniuk, 2011 .