H. Müssig

发表

Basic science and challenges in process simulation

S. Dunham, H. Vuong, J. Dabrowski, 1999 .

Influence of the electrode material on HfO2 metal-insulator-metal capacitors

C. Wenger, H. Müssig, M. Lukosius, 2009 .

Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications

D. Wolansky, B. Tillack, C. Wenger, 2009 .

Investigation of atomic vapour deposited TiN/HfO2/SiO2 gate stacks for MOSFET devices

C. Wenger, J. Dabrowski, H. Müssig, 2008 .

Transistors and Atoms

W. Schröter, E. Weber, J. Dabrowski, 2004 .

Cross-sectional STM/STS — a useful tool for identification of dopants in silicon

R. Nuffer, J. Dabrowski, H. Müssig, 2000 .

Morphology and Composition of Selected High-k Materials and Their Relevance to Dielectric Properties of Thin Films

U. Schröder, L. Oberbeck, P. Zaumseil, 2008 .

Atomic Vapor Deposition of Titanium Nitride as Metal Electrodes for Gate-last CMOS and MIM Devices

C. Wenger, H. Müssig, M. Lukosius, 2008 .

Engineering the semiconductor/oxide interaction for stacking twin suppression in single crystalline epitaxial silicon(111)/insulator/Si(111) heterostructures

P. Zaumseil, T. Schroeder, D. Geiger, 2008 .

On the epitaxy of twin-free cubic (111) praseodymium sesquioxide films on Si(111)

C. Wenger, P. Zaumseil, T. Schroeder, 2006 .

Structure, twinning behavior, and interface composition of epitaxial Si(111) films on hex-Pr2O3(0001)∕Si(111) support systems

C. Wenger, P. Zaumseil, T. Schroeder, 2005 .

Lattice engineering of dielectric heterostructures on Si by isomorphic oxide-on-oxide epitaxy

P. Zaumseil, T. Schroeder, A. Wilke, 2008 .

The Influence of Defects and Impurities on Electrical Properties of High-k Dielectrics

Y. Nara, S. Inumiya, G. Kozłowski, 2008 .

Characterization of group II hafnates and zirconates for metal–insulator–metal capacitors

G. Kozłowski, T. Schroeder, P. Dudek, 2011 .

Praseodymium silicate films on Si(100) for gate dielectric applications: Physical and electrical characterization

C. Wenger, T. Schroeder, A. Mane, 2006 .

Band gap and band discontinuities at crystalline Pr2O3/Si(001) heterojunctions

H. Osten, J. P. Liu, H. Müssig, 2002 .

Growth of crystalline praseodymium oxide on silicon

H. Osten, J. P. Liu, E. Bugiel, 2002 .

Epitaxial growth of praseodymium oxide on silicon

H. Osten, J. P. Liu, E. Bugiel, 2001 .

Si Segregation into Pr2O3 and La2O3 high-k gate oxides

C. Wenger, P. Zaumseil, J. Dabrowski, 2005 .

Hf- and Zr-based alkaline earth perovskite dielectrics for memory applications

H. Müssig, G. Lippert, G. Łupina, 2009 .

Perovskite BaHfO3 Dielectric Layers for Dynamic Random Access Memory Storage Capacitor Applications

C. Wenger, H. Müssig, G. Lupina, 2009 .

Microscopic model for the nonlinear behavior of high-k metal-insulator-metal capacitors

C. Wenger, H. Müssig, G. Lupina, 2008 .

Thermal stability of Pr silicate high-k layers on Si(001)

C. Wenger, T. Schroeder, J. Dabrowski, 2006 .

Thermal oxidation of chemical vapour deposited tungsten layers on silicon substrates for embedded non-volatile memory application

D. Wolansky, B. Tillack, P. Zaumseil, 2009 .

Contribution of pipe diffusion to surface segregation kinetics

H. Müssig, M. Militzer, W. Arabczyk, 1988 .

Mechanism of dopant segregation to SiO 2 / Si ( 001 ) interfaces

J. Dabrowski, H. Müssig, M. Caldas, 2002 .

Silicon Surfaces and Formation of Interfaces: Basic Science in the Industrial World

J. Dabrowski, H. Müssig, 2000 .

Interface Properties of Pr x Al 2-x O 3 (x = 0 to 2) Dielectrics on TiN Studied by Synchrotron Radiation X-ray Photoelectron Spectroscopy

C. Wenger, T. Schroeder, H. Müssig, 2007 .

Deposition of BaHfO3 Dielectric Layers for Microelectronic Applications by Pulsed Liquid Injection MOCVD

C. Wenger, T. Katkus, Raimondas Galvelis, 2009 .

Titanium-added praseodymium silicate high-k layers on Si(001)

C. Wenger, T. Schroeder, A. Mane, 2005 .

Manufacturing method of a semiconductor device with praseodymium oxide dielectric

H. Müssig, 2003 .

The interaction of oxygen with the iron (III) surface: Mainly studied by aes

H. Müssig, W. Arabczyk, 1980 .

Sulphur Segregation on the (111) Iron Surface Studied by LEED, AES, and WFC

H. Müssig, W. Arabczyk, F. Storbeck, 1979, October 16.

On the band gaps and electronic structure of thin single crystalline praseodymium oxide layers on Si(111)

P. Zaumseil, T. Schroeder, D. Schmeißer, 2009 .

Nitrogen bonding states on iron studied by PES and AES

H. Müssig, W. Arabczyk, 1987 .

The influence of lattice oxygen on the initial growth behavior of heteroepitaxial Ge layers on single crystalline PrO2(111)∕Si(111) support systems

P. Zaumseil, T. Schroeder, J. Wollschläger, 2008 .

Praseodymium silicate layers with atomically abrupt interface on Si(100)

C. Wenger, T. Schroeder, A. Mane, 2005 .

Phosphorus segregation on iron (111) surfaces studied by AES, XPS, and LEED

H. Müssig, W. Arabczyk, F. Storbeck, 1991 .

Interaction between phosphorus and oxygen on the Fe(111) surface

H. Müssig, A. Meisel, W. Arabczyk, 1987 .

Separation of the bulk and surface components in Auger electron spectroscopy

J. Dabrowski, H. Müssig, W. Arabczyk, 1998 .

Activation energy of sulphur diffusion in ferromagnetic α-iron determined by surface segregation studies

H. Müssig, M. Militzer, W. Arabczyk, 1986 .

Investigation of the oxidation on a (111) surface of iron by low energy electrons

H. Müssig, W. Arabczyk, 1976 .

LEED-AES investigation on the influence of thermally segregated chromium on the oxidation of an iron-chromium alloy

H. Müssig, F. Allmer, 1985 .

Microscopic picture of Si(113): A novel surface reconstruction, the origin of defects, and the process of adsorption. Theoretical and experimental study

J. Dabrowski, H. Müssig, G. Wolff, 1995 .

Low coverage adsorption of Sb4 on Si(113) studied by scanning tunneling microscopy

J. Dabrowski, H. Müssig, S. Hinrich, 1996 .

The reconstruction of the Si(113) surface studied by scanning tunneling microscope

H. Müssig, W. Arabczyk, S. Hinrich, 1995 .

Interaction between sulphur and oxygen on Fe(111)

H. Müssig, W. Arabczyk, A. Meisel, 1990 .

Notes on Quantitative AES of the Fe-O System

H. Müssig, G. Gergely, 1982, January 16.

The role of the HfO2–TiN interface in capacitance–voltage nonlinearity of Metal-Insulator-Metal capacitors

C. Wenger, H. Müssig, M. Lukosius, 2009 .

A process for production of Si wafers with a praseodymium-layer

D. Schmeißer, H. Müssig, 2003 .

Surface reconstruction suggests a nucleation mechanism in bulk: Sb/Si(113) and {113} planar defects

J. Dabrowski, H. Müssig, S. Hinrich, 1998 .

Role of Interstitial Atoms in Microscopic Processes on (113) and (001) Surfaces of Silicon

J. Dabrowski, H. Müssig, G. Wolff, 1995 .

Structural models for Sb on Si(113): an experimental and theoretical STM study

J. Dabrowski, H. Müssig, S. Hinrich, 1996 .

Structure and strain relaxation mechanisms of ultrathin epitaxial Pr2O3 films on Si(111)

C. Wenger, J. Zegenhagen, I. Joumard, 2005 .

Atomically smooth and single crystalline Ge(111)/cubic-Pr2O3(111)/Si(111) heterostructures: Structural and chemical composition study

R. Kurps, P. Zaumseil, T. Schroeder, 2009 .

Formation of atomically smooth, ultrathin oxides on Si(113)

J. Dabrowski, H. Müssig, S. Hinrich, 2001 .

Can Si(113) wafers be an alternative to Si(001)

K. Ehwald, P. Gaworzewski, J. Dabrowski, 2001 .

Mechanism of dopant segregation to SiO2/Si(001) interfaces

J. Dabrowski, H. Müssig, R. Casali, 2000 .

Segregation of phosphorus to SiO2/Si(001) interfaces

J. Dabrowski, H. Müssig, M. Caldas, 2000 .

A unified microscopic mechanism for donor deactivation in Si

J. Dabrowski, H. Müssig, M. Caldas, 1999 .

Atomically Smooth Ultrathin Oxide Layers on SI(113)

J. Dabrowski, H. Müssig, S. Hinrich, 1999 .

Dielectric properties of single crystalline PrO2(111)/Si(111) heterostructures: Amorphous interface and electrical instabilities

P. Zaumseil, T. Schroeder, C. Walczyk, 2009 .

Initial stages of praseodymium oxide film formation on Si( 0 0 1 )

H. Osten, J. P. Liu, J. Dabrowski, 2002 .

Atomic - vapour - deposited HfO2 and Sr4Ta2O9 layers for metal-insulator-metal applications

C. Wenger, T. Schroeder, J. Dabrowski, 2007 .

High-K Dielectrics: The Example of Pr2O3

H. Osten, J. Dabrowski, H. Müssig, 2004 .

Process integration of Pr-based high-k gate dielectrics

C. Wenger, P. Zaumseil, T. Schroeder, 2005 .

First investigation of metal–insulator–metal (MIM) capacitor using Pr2O3 dielectrics

C. Wenger, P. Zaumseil, J. Dabrowski, 2004 .

Pr2O3/Si(001) interface reactions and stability

D. Schmeißer, J. Dabrowski, H. Müssig, 2004 .

The Pr2O3/Si(001) interface studied by synchrotron radiation photo-electron spectroscopy

D. Schmeißer, H. Müssig, 2003 .

A CMOS Process-Compatible Wet-Etching Recipe for the High-k Gate Dielectrics Pr2O3 and Pr2 − x Ti x O3

C. Wenger, P. Zaumseil, T. Schroeder, 2005 .

Ultrathin Dielectric Films Grown by Solid Phase Reaction of Pr with SiO 2

C. Wenger, P. Zaumseil, D. Schmeißer, 2004 .

Solid-state reaction between Pr and SiO2 studied by photoelectron spectroscopy and ab initio calculations

C. Wenger, P. Zaumseil, D. Schmeißer, 2004 .

Dielectric and structural properties of thin SrHfO3 layers on TiN

H. Müssig, G. Lippert, G. Lupina, 2008 .

Thin BaHfO3 high-k dielectric layers on TiN for memory capacitor applications

C. Wenger, P. Zaumseil, C. Walczyk, 2008 .

Atomic-scale engineering of future high-k dynamic random access memory dielectrics: The example of partial Hf substitution by Ti in BaHfO3

E. Zschech, P. Zaumseil, T. Schroeder, 2011 .