J. Kouvetakis

发表

Advanced Si-based Semiconductors for Energy and Photonic Applications

J. Tolle, J. Kouvetakis, J. Menéndez, 2009 .

Type-I Ge∕Ge1−x−ySixSny strained-layer heterostructures with a direct Ge bandgap

John Kouvetakis, Jose Menendez, J. Kouvetakis, 2004 .

Perfectly tetragonal, tensile-strained Ge on Ge1−ySny buffered Si(100)

V. D'costa, A. Chizmeshya, J. Tolle, 2007 .

LASERS, OPTICS, AND OPTOELECTRONICS 2865 Single-mode solid-state single photon source based on isolated quantum dots in pillar microcavities

Costas Fotakis, Eric Moreau, C. Kalpouzos, 2001 .

Novel synthetic pathways to wide bandgap semiconductors in the Si?C?Al?N system

David J. Smith, P. Crozier, A. Chizmeshya, 2002 .

Electrical characterization studies of p-type Ge, Ge1−ySny, and Si0.09Ge0.882Sn0.028 grown on n-Si substrates

Thomas R. Harris, R. Beeler, J. Kouvetakis, 2014 .

Advances in SiGeSn/Ge Technology

R. Soref, J. Kouvetakis, J. Menéndez, 2006 .

Compliant tin-based buffers for the growth of defect-free strained heterostructures on silicon

John Tolle, John Kouvetakis, Jose Menendez, 2006 .

Experimental and theoretical study of deviations from Vegard's law in the SnxGe1-x system

M. Bauer, A. Chizmeshya, J. Kouvetakis, 2003 .

Advances in Light Emission from Group-IV Alloys via Lattice Engineering and n-Type Doping Based on Custom-Designed Chemistries

C. L. Senaratne, J. Kouvetakis, J. Menéndez, 2014 .

Simple chemical routes to diamond-cubic germanium-tin alloys

M. McCartney, J. Tolle, J. Kouvetakis, 2001 .

Fabrication of Ge:Ga Hyperdoped Materials and Devices Using CMOS-Compatible Ga and Ge Hydride Chemistries.

J. Kouvetakis, J. Menéndez, Chi Xu, 2018, ACS applied materials & interfaces.

Direct versus indirect optical recombination in Ge films grown on Si substrates

Liying Jiang, R. Beeler, J. Kouvetakis, 2011, 1106.3300.

Epitaxy-Driven Synthesis of Elemental Ge/Si Strain-Engineered Materials and Device Structures via Designer Molecular Chemistry

V. D'costa, A. Chizmeshya, J. Tolle, 2007 .

Novel synthetic routes to carbon-nitrogen thin films

B. Wilkens, J. Kouvetakis, A. Bandari, 1994 .

Novel Synthetic Routes to Carbon Nitride

David J. Smith, T. Groy, J. Kouvetakis, 1995 .

Real-time monitoring of structure and stress evolution of boron films grown on Si(100) by ultrahigh vacuum chemical vapor deposition

E. Chason, J. Kouvetakis, S. Hearne, 1999 .

Synthesis of LiBC4N4, BC3N3, and Related C−N Compounds of Boron: New Precursors to Light Element Ceramics

Darrick J. Williams, D. Williams, J. Kouvetakis, 2000 .

Synthesis and optical properties of (GaAs)yGe5-2y alloys assembled from molecular building blocks

C. Poweleit, P. Sims, J. Kouvetakis, 2017 .

Synthesis and optical properties of Sn-rich Ge1 – x – ySixSny materials and devices

Liying Jiang, R. Beeler, J. Kouvetakis, 2014 .

Synthesis and Properties of Monocrystalline Al(As1–xPx)Si3 Alloys on Si(100)

David J. Smith, Liying Jiang, A. Chizmeshya, 2012 .

Synthesis of Si-Ge nanoscale structures via deposition of single-source (GeH3)4−nSiHn hydrides

V. D'costa, P. Crozier, J. Tolle, 2005 .

Morphological and optical properties of Si nanostructures imbedded in SiO2 and Si3N4 films grown by single source chemical vapor deposition

C. Poweleit, T. Alford, David J. Smith, 2002 .

Room temperature emission spectroscopy of GeSn waveguides under optical pumping

A. Sarangan, J. Kouvetakis, J. Menéndez, 2022, AIP Advances.

Temperature-Dependent Photoluminescence Studies of Ge1−ySny (y = 4.3%–9.0%) Grown on Ge-Buffered Si: Evidence for a Direct Bandgap Cross-Over Point

Thomas R. Harris, J. S. Kim, Sang Jo Lee, 2019, Journal of the Korean Physical Society.

Direct bandgap cross-over point of Ge1-ySny grown on Si estimated through temperature-dependent photoluminescence studies

Thomas R. Harris, C. L. Senaratne, J. Kouvetakis, 2016 .

Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes

C. L. Senaratne, P. Sims, J. Kouvetakis, 2016 .

Ge1−x−ySixSny light emitting diodes on silicon for mid-infrared photonic applications

C. L. Senaratne, J. Kouvetakis, J. Menéndez, 2015 .

Influence of Device Microstructure on The Optical Properties of Ge1-ySny (y=00.11) LEDs Produced by Next Generation Deposition Methods

P. Sims, J. Kouvetakis, J. Menéndez, 2015, Microscopy and Microanalysis.

Synthesis of (Si 2 Ge)C x and Related Ge 1-x C x Phases in The Si-Ge-C System

J. Kouvetakis, D. C. Nesting, J. McMurran, 1998 .

Molecular approaches to p- and n-nanoscale doping of Ge1−ySny semiconductors: Structural, electrical and transport properties

V. D'costa, A. Chizmeshya, J. Tolle, 2009 .

Effect of nitridation on the growth of GaN on ZrB2(0001)∕Si(111) by molecular-beam epitaxy

J. Tolle, J. Kouvetakis, Zhi Wang, 2006 .

Ether-like Si-Ge hydrides for applications in synthesis of nanostructured semiconductors and dielectrics.

V. D'costa, A. Chizmeshya, J. Tolle, 2009, Dalton transactions.

Synthesis and Structural Properties of the Binary Framework C–N Compounds of Be, Mg, Al, and Tl

Darrick J. Williams, K. Leinenweber, J. Kouvetakis, 2001 .

Optical properties of Ge1-x-ySixSny alloys with y > x: Direct bandgaps beyond 1550 nm

Liying Jiang, J. Kouvetakis, J. Menéndez, 2013 .

Elastic properties of nanocrystalline zirconium–silicon–boron thin films

B. Wilkens, David J. Smith, J. Tolle, 2001 .

In situ real time observation of chemical vapor deposition using an environmental transmission electron microscope

Renu Sharma, J. Kouvetakis, K. Weiss, 1995 .

Synthesis and Properties of Monocrystalline Al(As1-xPx)Si3 Alloys on Si(100).

Liying Jiang, A. Chizmeshya, R. Beeler, 2012 .

Monocrystalline Al(As1–xNx)Si3 and Al(P1–xNx)ySi5–2y Alloys with Diamond-like Structures: New Chemical Approaches to Semiconductors Lattice Matched to Si

C. Poweleit, Liying Jiang, A. Chizmeshya, 2012 .

Nanosynthesis routes to new tetrahedral crystalline solids: silicon-like Si3AlP.

C. Poweleit, David J. Smith, Liying Jiang, 2011, Journal of the American Chemical Society.

Ge1-ySny (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

C. L. Senaratne, Liying Jiang, J. Kouvetakis, 2014 .

Experimental doping dependence of the lattice parameter in n -type Ge: Identifying the correct theoretical framework by comparison with Si

C. L. Senaratne, J. Kouvetakis, J. Menéndez, 2016 .

Boron-carbon-nitrogen materials of graphite-like structure

R. Kaner, N. Bartlett, J. Kouvetakis, 1987 .

A novel graphite-like material of composition BC3, and nitrogen–carbon graphites

R. Kaner, N. Bartlett, J. Kouvetakis, 1986 .

Calculation of thermodynamic properties of metastable phases of the elements

L. Brewer, J. Kouvetakis, 1993 .

Epitaxy of light emitting SiGeSn materials using novel precursors

J. Kouvetakis, J. Menéndez, 2014, 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM).

Evolution of optical phonons in epitaxial Ge 1− y Sn y structures

H. Rho, J. Kouvetakis, Mee-Yi Ryu, 2020 .

Crystalline (Al1-xBx)PSi3 and (Al1-xBx)AsSi3 tetrahedral phases via reactions of Al(BH4)3 and M(SiH3)3 (M = P, As)

P. Sims, J. Kouvetakis, J. Menéndez, 2015 .

New Pathways to Heteroepitaxial GaN by Inorganic CVD Synthesis and Characterization of Related Ga-C-N Novel Systems

Darrick J. Williams, David J. Smith, J. Kouvetakis, 1996 .

Growth of GaN on (100)Si Using a New C-H and N-H Free Single-Source Precursor

David J. Smith, J. Kouvetakis, D. Beach, 1995 .

Growth of SiCAlN on Si(111) via a crystalline oxide interface

P. Crozier, A. Chizmeshya, J. Tolle, 2002 .

Fundamental band gap and direct-indirect crossover in Ge1-x-ySixSny alloys

Liying Jiang, J. Kouvetakis, J. Menéndez, 2013 .

Thin Film Science and Technology

T. Alford, J. Kouvetakis, J. Mayer, 2005 .

The Disordered Crystal Structures of Zn(CN)2and Ga(CN)3

D. E. Partin, Darrick J. Williams, F. Lincoln, 1997 .

Novel chemical routes to silicon‐germanium‐carbon materials

David J. Smith, J. Kouvetakis, D. Chandrasekhar, 1994 .

Novel Methods for CVD of Ge4C and (Ge4C)xSiy Diamond-like Semiconductor Heterostructures: Synthetic Pathways and Structures of Trigermyl-(GeH3)3CH and Tetragermyl-(GeH3)4C Methanes

J. Kouvetakis, A. Haaland, V. I. Sokolov, 1998 .

SYNTHESIS AND CHARACTERIZATION OF TETRAKIS(TRIHALOGERMYL)METHANES. MOLECULES CONTAINING STERICALLY STRAINED CARBON CENTERS

T. Groy, J. Kouvetakis, P. Matsunaga, 1995 .

Synthesis of Nanoporous Cubic In(CN)(3) and In(1)(-)(x)()Ga(x)()(CN)(3) and Corresponding Inclusion Compounds.

Darrick J. Williams, J. Kouvetakis, M. O'Keeffe, 1998, Inorganic chemistry.

Molecular structure of CH(GeBr 3 ) 3 determined by gas electron diffraction and ab initio calculations: steric congestion in tri- and tetra-germylmethanes

J. Kouvetakis, A. Haaland, H. Volden, 1999 .

Morphological control and structural characteristics of crystalline Ge–C systems: Carbide nanorods, quantum dots, and epitaxial heterostructures

David J. Smith, J. Kouvetakis, D. C. Nesting, 1999 .

Chemical Synthesis of Metastable Germanium-Carbon Alloys Grown Heteroepitaxially on (100) Si

David J. Smith, J. Kouvetakis, M. Todd, 1996 .

Growth and characterization of thin Si80C20 films based upon Si4C building blocks

David J. Smith, J. Kouvetakis, D. Chandrasekhar, 1998 .

The Application of Novel Chemical Precursors for the Preparation of Si-Ge-C Heterostructures and Superlattices

J. Kouvetakis, J. Menéndez, J. Lorentzen, 1998 .

Influence of precursor chemistry on synthesis of silicon-carbon-germanium alloys

David J. Smith, J. Kouvetakis, D. Chandrasekhar, 1995 .

Structural properties of heteroepitaxial germanium-carbon alloys grown on Si (100)

David J. Smith, J. Kouvetakis, M. Todd, 2001 .

Strategies for the synthesis of highly concentrated Si1−yCy diamond-structured systems

David J. Smith, J. Kouvetakis, J. Menéndez, 1998 .

New Silicon-Carbon Materials Incorporating Si4C Building Blocks

David J. Smith, J. Kouvetakis, D. Chandrasekhar, 1996 .

Practical Materials Chemistry Approaches for Tuning Optical and Structural Properties of Group IV Semiconductors and Prototype Photonic Devices

A. Chizmeshya, J. Tolle, J. Kouvetakis, 2010, IEEE Photonics Journal.

Synthesis and fundamental studies of (H3Ge)xSiH4-x molecules: precursors to semiconductor hetero- and nanostructures on Si.

D. Klewer, A. Chizmeshya, J. Tolle, 2005, Journal of the American Chemical Society.

Formation of a Tetrameric, Cyclooctane-like, Azidochlorogallane, [HClGaN3]4, and Related Azidogallanes. Exothermic Single-Source Precursors to GaN Nanostructures

David J. Smith, J. Kouvetakis, D. C. Nesting, 1998 .

Synthesis and structures of M(Me3SiNCHNSiMe3)3 (M = Al, Ga) via reactions of M‐hydrides with Me3SiNCNSiMe3

A. Chizmeshya, J. Kouvetakis, Cole J Ritter, 2007 .

SYNTHESIS OF NEW AZIDOALANES WITH HETEROCYCLIC MOLECULAR STRUCTURES

T. Groy, J. Kouvetakis, J. L. Hubbard, 2001 .

Synthesis and structures of heterocyclic azidogallanes [(CH3)ClGaN3]4 and [(CH3)BrGaN3]3 en route to [(CH3)HGaN3]x: an inorganic precursor to GaN.

T. Groy, J. Kouvetakis, J. L. Hubbard, 2000, Inorganic chemistry.

Synthesis of Molecular Precursors to Carbon−Nitrogen−Phosphorus Polymeric Systems

J. Kouvetakis, D. C. Nesting, J. L. Hubbard, 1998 .

Ultralow Resistivity Ge:Sb heterostructures on Si Using Hydride Epitaxy of Deuterated Stibine and Trigermane.

C. L. Senaratne, P. Sims, J. Kouvetakis, 2016, ACS applied materials & interfaces.

Novel aspects of graphite intercalation by fluorine and fluorides and new B/C, C/N and B/C/N materials based on the graphite network

N. Bartlett, R. Hagiwara, M. Lerner, 1989 .

Chemical Vapor Deposition of Gallium Nitride from Diethylgallium Azide

J. Kouvetakis, D. Beach, 1989 .

Formation of a Tetrameric, Cyclooctane-Like, Azidochlorogallane, [HClGaN3]4, and Related Azidogallanes. Exothermic Single-Source Precursors to GaN Nanostructures.

David J. Smith, J. Kouvetakis, D. C. Nesting, 1998 .

Surface and interface studies of GaN epitaxy on Si(111) via ZrB2 buffer layers

A. Chizmeshya, J. Tolle, J. Kouvetakis, 2005 .

Nucleation and growth of epitaxial ZrB2(0 0 0 1) on Si(1 1 1)

A. Chizmeshya, J. Tolle, J. Kouvetakis, 2004 .

Epitaxial growth of the pseudo-binary wide band gap semiconductor SiCAlN

C. Poweleit, David J. Smith, P. Crozier, 2003 .

Low-temperature growth of SiCalN films of high hardness on Si(111) substrates

David J. Smith, P. Crozier, J. Tolle, 2001 .

Low-temperature epitaxial growth of the quaternary wide band gap semiconductor SiCAlN.

C. Poweleit, P. Crozier, A. Chizmeshya, 2002, Physical review letters.

Structural, electronic and energetic properties of GaN 0001 /Ga2O3 100 heterojunctions: A first-principles density functional theory study

A. Chizmeshya, J. Kouvetakis, Po-Liang Liu, 2008 .

First-principles studies of GaN(0001) heteroepitaxy on Zr B 2 (0001)

A. Chizmeshya, J. Kouvetakis, Po-Liang Liu, 2005 .

Stoichiometric and non-stoichiometric films in the Si–O–N system: mechanical, electrical, and dielectric properties

S. Dey, P. Crozier, J. Tolle, 2003 .

Synthesis and characterization of heteroepitaxial diamond‐structured Ge1−xCx (x=1.5–5.0%) alloys using chemical vapor deposition

David J. Smith, J. Kouvetakis, M. Todd, 1996 .

Raman scattering in Ge1−ySny alloys

John Tolle, John Kouvetakis, Christian D. Poweleit, 2007 .

Deviations from Vegard's law in semiconductor thin films measured with X-ray diffraction and Rutherford backscattering: The Ge1-ySny and Ge1-xSix cases

C. L. Senaratne, J. Kouvetakis, J. Menéndez, 2017 .

Molecular epitaxy of pseudomorphic Ge1−ySny (y = 0.06–0.17) structures and devices on Si/Ge at ultra-low temperatures via reactions of Ge4H10 and SnD4

C. L. Senaratne, J. Kouvetakis, J. Menéndez, 2017 .

GROWTH OF HETEROEPITAXIAL SI1-X-YGEXCY ALLOYS ON SILICON USING NOVEL DEPOSITION CHEMISTRY

David J. Smith, J. Kouvetakis, D. Chandrasekhar, 1995 .

Compositional dependence of the bowing parameter for the direct and indirect band gaps in Ge1-ySny alloys

C. L. Senaratne, J. Kouvetakis, J. Menéndez, 2014 .

Radiation-induced electron and hole traps in Ge1 − xSnx (x = 0–0.094)

J. Kouvetakis, Buguo Wang, M. Hogsed, 2020 .

Next generation of Ge1−ySny (y = 0.01-0.09) alloys grown on Si(100) via Ge3H8 and SnD4: Reaction kinetics and tunable emission

David Smith, Liying Jiang, John Kouvetakis, 2012 .

Synthesis, Stability Range, and Fundamental Properties of Si—Ge—Sn Semiconductors Grown Directly on Si(100) and Ge(100) Platforms

V. D'costa, A. Chizmeshya, J. Tolle, 2010 .

Direct integration of active Ge1−x(Si4Sn)x semiconductors on Si(100)

V. D'costa, A. Chizmeshya, J. Tolle, 2009 .

New classes of Si-based photonic materials and device architectures via designer molecular routes

John Kouvetakis, A. Chizmeshya, J. Kouvetakis, 2007 .

Versatile buffer layer architectures based on Ge1−xSnx alloys

John Tolle, Stefan Zollner, John Kouvetakis, 2005 .

Temperature-dependent photoluminescence of Ge/Si and Ge1-ySny/Si, indicating possible indirect-to-direct bandgap transition at lower Sn content

Thomas R. Harris, John Kouvetakis, R. Beeler, 2013 .

TIN-BASED GROUP IV SEMICONDUCTORS: New Platforms for Opto- and Microelectronics on Silicon

John Kouvetakis, Jose Menendez, A. Chizmeshya, 2006 .

Scaling law for the compositional dependence of Raman frequencies in SnGe and GeSi alloys

John Kouvetakis, Jose Menendez, M. Bauer, 2004 .

Synthesis of ternary SiGeSn semiconductors on Si(100) via SnxGe1−x buffer layers

John Kouvetakis, Jose Menendez, Jie Ren, 2003 .

Tunable band structure in diamond–cubic tin–germanium alloys grown on silicon substrates

Corey L. Bungay, David J. Smith, John Tolle, 2003 .

Synthesis of silicon-based infrared semiconductors in the Ge-Sn system using molecular chemistry methods.

M. McCartney, S. Zollner, J. Kouvetakis, 2001, Journal of the American Chemical Society.

Composition and structure of boron nitride films deposited by chemical vapor deposition from borazine

C. Miller, J. Kouvetakis, D. Beach, 1990 .

Synthesis of heteroepitaxial BP and related Al-B-Sb-As-P films via CVD of Al(BH4)3 and MH3 (M=P, As, Sb) at temperatures below 600 °C

P. Sims, H. Zhuang, J. Kouvetakis, 2020, Semiconductor Science and Technology.

Temperature dependence of the interband critical points of bulk Ge and strained Ge on Si

S. Zollner, J. Kouvetakis, J. Menéndez, 2017 .

Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductors

John Tolle, John Kouvetakis, Jose Menendez, 2010 .

A novel predictive model for formation enthalpies of Si and Ge hydrides with propane‐ and butane‐like structures

C. Weng, J. Kouvetakis, A. V. G. Chizmeshya, 2011, J. Comput. Chem..

Direct gap electroluminescence from Si/Ge1−ySny p-i-n heterostructure diodes

J. Tolle, R. Beeler, J. Kouvetakis, 2011 .

Synthesis and atomic and electronic structure of new Si-Ge-C alloys and compounds

David J. Smith, J. Kouvetakis, D. C. Nesting, 1998 .

Rational design of monocrystalline (InP)(y)Ge(5-2y)/Ge/Si(100) semiconductors: synthesis and optical properties.

C. Poweleit, David J. Smith, Liying Jiang, 2013, Journal of the American Chemical Society.

Controlled striped phase formation on ultraflat Si(001) surfaces during diborane exposure

J. Kouvetakis, H. Hibino, J. Pelz, 2001 .

Epitaxial film growth of zirconium diboride on Si(0 0 1)

A. Chizmeshya, J. Tolle, J. Kouvetakis, 2005 .

Observation of temperature-dependent heavy- and light-hole split direct bandgap and tensile strain from Ge0.985Sn0.015 using photoreflectance spectroscopy

Thomas R. Harris, J. S. Kim, J. Kouvetakis, 2016 .

Observation of heavy- and light-hole split direct bandgap photoluminescence from tensile-strained GeSn (0.03% Sn)

Thomas R. Harris, R. Beeler, J. Kouvetakis, 2014 .

CHARACTERIZATION OF NEWLY SYNTHESIZED NOVEL GRAPHITE FILMS

T. Sasaki, N. Bartlett, K. Krishnan, 1988 .

Molecular Strategies for Configurational Sulfur Doping of Group IV Semiconductors Grown on Si(100) Using S(MH3)2 (M = Si,Ge) Delivery Sources: An Experimental and Theoretical Inquiry

C. L. Senaratne, A. Chizmeshya, J. Kouvetakis, 2014 .

Compositional dependence of Raman frequencies in ternary Ge 1-x-y Si x Sn y alloys

C. Poweleit, V. D'costa, J. Tolle, 2007 .

Ge1−ySny∕Si(100) composite substrates for growth of InxGa1−xAs and GaAs1−xSbx alloys

V. D'costa, J. Tolle, J. Kouvetakis, 2007 .

Molecular-based synthetic approach to new group IV materials for high-efficiency, low-cost solar cells and Si-based optoelectronics.

V. D'costa, Yan Fang, A. Chizmeshya, 2008, Journal of the American Chemical Society.

Ge–Sn semiconductors for band-gap and lattice engineering

Stefan Zollner, John Kouvetakis, Jose Menendez, 2002 .

Low temperature chemical vapor deposition of Si-based compounds via SiH3SiH2SiH3: Metastable SiSn∕GeSn∕Si(100) heteroepitaxial structures

V. D'costa, A. Chizmeshya, J. Tolle, 2006 .

Temperature-dependent direct transition energy in Ge0.99Sn0.01 film grown on Si measured by photoreflectance spectroscopy

J. S. Kim, J. Kouvetakis, H. Jo, 2015 .

Band Gap-Engineered Group-IV Optoelectronic Semiconductors, Photodiodes and Prototype Photovoltaic Devices

David J. Smith, Liying Jiang, John Kouvetakis, 2013 .

Chemical routes to Ge /Si(100) structures for low temperature Si-based semiconductor applications

M. Wistey, A. Chizmeshya, J. Tolle, 2007 .

Crystal structure of tin tetrabromodioxane, SnBr4 · (C4H8O2), a one dimensional polymer of Sn(IV)

M. Bauer, J. Kouvetakis, L. Groy, 2002 .

Serosurvey of SARS-COV-2 at a large public university

J. LaBaer, M. Jehn, J. Kouvetakis, 2023, medRxiv.

SnGe superstructure materials for Si-based infrared optoelectronics

David Smith, John Tolle, Stefan Zollner, 2003 .

TIN-BASED GROUP IV SEMICONDUCTORS:

A. Chizmeshya, J. Kouvetakis, J. Menéndez, 2006 .

Optical characterization of Si1−xGex nanodots grown on Si substrates via ultrathin SiO2 buffer layers

C. Poweleit, J. Tolle, J. Kouvetakis, 2007 .

Synthesis of butane-like SiGe hydrides: enabling precursors for CVD of Ge-rich semiconductors.

A. Chizmeshya, J. Tolle, J. Kouvetakis, 2006, Journal of the American Chemical Society.

Low-temperature pathways to Ge-rich Si1−xGex alloys via single-source hydride chemistry

A. Chizmeshya, J. Tolle, J. Kouvetakis, 2005 .

Synthesis of highly coherent SiGe and Si4Ge nanostructures by molecular beam epitaxy of H3SiGeH3 and Ge(SiH3)4

M. Bauer, P. Crozier, J. Tolle, 2003 .

Non-radiative recombination in Ge1−ySny light emitting diodes: The role of strain relaxation in tuned heterostructure designs

David Smith, Patrick Sims, John Kouvetakis, 2015 .

Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications

Shui-Qing Yu, Junqi Xie, John Kouvetakis, 2009 .

In situ, real‐time observation of Al chemical‐vapor deposition on SiO2 in an environmental transmission electron microscope

Renu Sharma, J. Kouvetakis, K. Weiss, 1994 .

Electron beam assisted chemical vapor deposition of gold in an environmental tem

Renu Sharma, J. Kouvetakis, P. Seidler, 1995 .

Consistent optical and electrical determination of carrier concentrations for the accurate modeling of the transport properties of n-type Ge

J. Kouvetakis, Chi Xu, Jos'e Men'endez, 2023, Materials Science in Semiconductor Processing.

Development of Light Emitting Group IV Ternary Alloys on Si Platforms for Long Wavelength Optoelectronic Applications

Liying Jiang, J. Kouvetakis, J. Menéndez, 2014 .

Synthesis of short-wave infrared Ge1−ySny semiconductors directly on Si(100) via ultralow temperature molecular routes for monolithic integration applications

J. Kouvetakis, J. Menéndez, Chi Xu, 2022, Journal of Vacuum Science & Technology A.

Optical critical points of thin-film Ge 1-y Sn y alloys: A comparative Ge 1-y Sn y /Ge 1-x Si x study

Stefan Zollner, John Kouvetakis, Jose Menendez, 2006 .

New IR semiconductors in the Si-Ge-Sn system

J. Tolle, J. Kouvetakis, J. Menéndez, 2004, First IEEE International Conference on Group IV Photonics, 2004..

Direct gap Group IV semiconductors for next generation Si-based IR photonics

J. Kouvetakis, J. Menéndez, J. Gallagher, 2014 .

Fundamental experimental and theoretical aspects of high-order Ge-hydride chemistry for versatile low-temperature Ge-based materials fabrication

C. L. Senaratne, A. Chizmeshya, J. Kouvetakis, 2013 .

Molecular synthesis of high-performance near-IR photodetectors with independently tunable structural and optical properties based on Si-Ge-Sn.

David J. Smith, A. Chizmeshya, R. Beeler, 2012, Journal of the American Chemical Society.

Ultra-Low-Temperature Epitaxy of Ge-based Semiconductors and Optoelectronic Structures on Si(100): Introducing Higher Order Germanes (Ge3H8, Ge4H10)

Liying Jiang, A. Chizmeshya, R. Beeler, 2012 .

Comparison study of temperature dependent direct/indirect bandgap emissions of Ge1-x-ySixSny and Ge1-ySny grown on Ge buffered Si

Thomas R. Harris, J. Kouvetakis, Mee-Yi Ryu, 2019, Thin Solid Films.

Electroluminescence from Ge1−ySny diodes with degenerate pn junctions

C. L. Senaratne, J. Kouvetakis, J. Menéndez, 2015 .

Compositional dependence of optical interband transition energies in GeSn and GeSiSn alloys

C. L. Senaratne, J. Kouvetakis, J. Menéndez, 2015 .

New strategies for Ge-on-Si materials and devices using non-conventional hydride chemistries: the tetragermane case

Liying Jiang, A. Chizmeshya, R. Beeler, 2013 .

Compositional dependence of the absorption edge and dark currents in Ge1−x−ySixSny/Ge(100) photodetectors grown via ultra-low-temperature epitaxy of Ge4H10, Si4H10, and SnD4

David J. Smith, R. Beeler, J. Kouvetakis, 2012 .

GeSiSn Photodiodes With 1 eV Optical Gaps Grown on Si(100) and Ge(100) Platforms

R. Beeler, J. Kouvetakis, J. Menéndez, 2012, IEEE Journal of Photovoltaics.

Complementary metal-oxide semiconductor-compatible detector materials with enhanced 1550 nm responsivity via Sn-doping of Ge/Si(100)

R. Beeler, J. Kouvetakis, J. Menéndez, 2011 .

Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon

John Tolle, John Kouvetakis, Chi Xu, 2010 .

Tunable optical gap at a fixed lattice constant in group-IV semiconductor alloys.

V. D'costa, J. Tolle, Y. Fang, 2009, Physical review letters.

Optical constants and interband transitions of Ge1−xSnx alloys (x<0.2) grown on Si by UHV-CVD

Stefan Zollner, John Kouvetakis, Jose Menendez, 2004 .

Optical and structural properties of SixSnyGe1−x−y alloys

John Tolle, Stefan Zollner, John Kouvetakis, 2004 .

Gas source molecular epitaxy of Ge1−ySny materials and devices using high order Ge4H10 and Ge5H12 hydrides

J. Kouvetakis, J. Menéndez, Chi Xu, 2021, Journal of Vacuum Science & Technology A.

Extended Compositional Range for the Synthesis of SWIR and LWIR Ge1–ySny Alloys and Device Structures via CVD of SnH4 and Ge3H8

C. Poweleit, J. Kouvetakis, J. Menéndez, 2021, ACS Applied Electronic Materials.

Mid-infrared (3–8 μm) Ge1−ySny alloys (0.15 < y < 0.30): Synthesis, structural, and optical properties

C. Poweleit, J. Kouvetakis, Chi Xu, 2019, Applied Physics Letters.

Fundamental Studies of P(GeH3)3, As(GeH3)3, and Sb(GeH3)3: Practical n-Dopants for New Group IV Semiconductors

A. Chizmeshya, J. Tolle, J. Kouvetakis, 2006 .

Compositional dependence of the direct and indirect band gaps in Ge1−ySny alloys from room temperature photoluminescence: implications for the indirect to direct gap crossover in intrinsic and n-type materials

C. L. Senaratne, J. Kouvetakis, J. Menéndez, 2014 .

Nanostructure–Property Control in AlPSi3/Si(100) Semiconductors Using Direct Molecular Assembly: Theory Meets Experiment at the Atomic Level

David J. Smith, Liying Jiang, A. Chizmeshya, 2014 .

Synthesis and Fundamental Studies of Si-Compatible (Si)GeSn and GeSn Mid-IR Systems with Ultrahigh Sn Contents

C. Poweleit, H. Zhuang, J. Kouvetakis, 2019, Chemistry of Materials.

Thermal expansivity of Ge1-y sny alloys

A. Chizmeshya, J. Kouvetakis, J. Menéndez, 2010 .

Transferability of optical bowing parameters between binary and ternary group-IV alloys

S. Zollner, V. D'costa, J. Tolle, 2006 .

Sn-alloying as a means of increasing the optical absorption of Ge at the C- and L-telecommunication bands

V. D'costa, J. Tolle, J. Kouvetakis, 2009 .

Enhanced optical and electrical performance of Ge1−xSnx/Ge/Si(100) (x = 0.062) semiconductor via inductively coupled H2 plasma treatments

Thomas R. Harris, J. Kouvetakis, Buguo Wang, 2019, Semiconductor Science and Technology.

Synthesis and properties of N3 and CN delivery compounds and related precursors for nitride and ceramic fabrication

T. Groy, A. Chizmeshya, J. Kouvetakis, 2008 .

Degenerate parallel conducting layer and conductivity type conversion observed from p-Ge1−ySny (y = 0.06%) grown on n-Si substrate

Thomas R. Harris, R. Beeler, J. Kouvetakis, 2012 .

Investigation of hydrogen inductively coupled plasma treatment effect for Ge 0.938 Sn 0.062 /Ge/Si film using photoreflectance spectroscopy

J. S. Kim, J. Kouvetakis, H. Jo, 2018 .

Ge 1-y Sn y ( y = 0 . 010 . 10 ) alloys on Ge-buffered Si : Synthesis , microstructure , and optical properties

Liying Jiang, J. Kouvetakis, T. Aoki, 2014 .

Synthetic Routes to Ga(CN)3 and MGa(CN)4 (M = Li, Cu) Framework Structures

Darrick J. Williams, J. Kouvetakis, L. Brousseau, 1997 .

Synthesis of Uniform GaN Quantum Dot Arrays via Electron Nanolithography of D2GaN3

P. Crozier, J. Tolle, J. Kouvetakis, 2004, Microscopy and Microanalysis.

Synthesis of Molecular Adducts of Beryllium, Boron, and Gallium Cyanides: Theoretical and Experimental Correlations between Solid-State and Molecular Analogues

T. Groy, A. Chizmeshya, J. Kouvetakis, 2007 .

Synthetic Routes to Ga(CN)3 and MGa(CN)4 (M: Li, Cu) Framework Structures.

Michael O'Keeffe, John Kouvetakis, Darrick J. Williams, 1997 .

Doping dependence of the optical dielectric function in n-type germanium

J. Kouvetakis, J. Menéndez, Chi Xu, 2019, Journal of Applied Physics.

In situ low temperature As-doping of Ge films using As(SiH3)3 and As(GeH3)3: fundamental properties and device prototypes

C. L. Senaratne, J. Kouvetakis, J. Menéndez, 2015 .

Non-conventional routes to SiGe:P/Si(100) materials and devices based on -SiH3 and -GeH3 derivatives of phosphorus: synthesis, electrical performance and optical behavior

J. Kouvetakis, J. Menéndez, Chi Xu, 2015 .

Frustrated incomplete donor ionization in ultra-low resistivity germanium films

John Kouvetakis, Chi Xu, C. L. Senaratne, 2014 .

Electroluminescence from GeSn heterostructure pin diodes at the indirect to direct transition

Toshihiro Aoki, Patrick Sims, John Kouvetakis, 2015 .

High-Performance Near-IR Photodiodes: A Novel Chemistry-Based Approach to Ge and Ge–Sn Devices Integrated on Silicon

J. Tolle, R. Beeler, J. Kouvetakis, 2011, IEEE Journal of Quantum Electronics.

H(2)GaN(3) and Derivatives: A Facile Method to Gallium Nitride.

K. Balasubramanian, J. Kouvetakis, D. Dai, 1998, Inorganic chemistry.

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

J. Kouvetakis, K. Weiss, J. Drucker, 1995 .

Chemical vapor deposition of highly conductive boron-doped graphite from triphenyl boron

M. McElfresh, J. Kouvetakis, D. Beach, 1994 .

Electrical characterization and deep-level transient spectroscopy of Ge0.873Si0.104Sn0.023 photodiode grown on Ge platform by ultra-high vacuum chemical vapor deposition

D. Look, J. Kouvetakis, B. Claflin, 2018 .

Infrared dielectric function of p -type Ge 0.98 Sn 0.02 alloys

V. D'costa, J. Tolle, J. Kouvetakis, 2009 .

Sn-based group-IV semiconductors on Si: New infrared materials and new templates for mismatched epitaxy

V. D'costa, A. Chizmeshya, J. Tolle, 2005 .

New Ge-Sn materials with adjustable bandgaps and lattice constants

John Tolle, Stefan Zollner, John Kouvetakis, 2002 .

Novel Synthetic Routes to Carbon‐Nitrogen Thin Films.

B. Wilkens, J. Kouvetakis, A. Bandari, 1994 .

ZrB2(0001)上,GaN(0001)ヘテロエピタクシーの第一原理研究

A. Chizmeshya, J. Kouvetakis, I. Tsong, 2005 .

Nonlinear structure-composition relationships in the Ge1-ySny/Si(100) (y<0.15) system

A. Chizmeshya, R. Beeler, J. Kouvetakis, 2011 .

Fundamental Studies of P(GeH3)3, As(GeH3)3, and Sb(GeH3)3: Practical n-Dopants for New Group IV Semiconductors.

A. Chizmeshya, J. Tolle, J. Kouvetakis, 2007 .

Strained Si films grown by chemical vapor deposition of trisilane on Ge buffered Si(100)

C. Poweleit, J. Tolle, J. Kouvetakis, 2008 .

A Novel Graphite-Like Material of Composition BC3, and Nitrogen-Carbon Graphites.

Neil Bartlett, Richard B. Kaner, John Kouvetakis, 1987 .

Practical routes to (SiH₃)₃P: applications in group IV semiconductor activation and in group III-V molecular synthesis.

A. Chizmeshya, J. Tolle, J. Kouvetakis, 2010, Dalton transactions.