N. Drozdov

发表

Determination of solar cell parameters from its current–voltage and spectral characteristics

M. Tivanov, A. Patryn, N. Drozdov, 2005 .

Investigation of defects in Cu(In,Ga)(S,Se)2 films using the photocurrent decay technique

V. Gremenok, V. Zalesski, E. Zaretskaya, 2008 .

Optical and photoelectrical properties of CdSx Se1–x films produced by screen‐printing technology

M. Tivanov, N. Drozdov, A. Fedotov, 2007 .

Effect of the hydrogen and argon ion-beam treatments on the structural and electrical properties of Cz Si wafers: Comparative study

P. Węgierek, N. Drozdov, A. Fedotov, 2009 .

Formation of insulating oxygen-containing layer on the silicon wafer surface using low-temperature hydrogenation

S. Kobeleva, A. Patryn, N. Drozdov, 2008 .

Modification of radiation hardness of silicon p-n junction photodiodes by hydrogen plasma treatment

A. Patryn, N. Drozdov, A. Fedotov, 2005 .

Transformation of Electrical Activity of Extended Defects in Silicon Polycrystals under Annealing and Hydrogen Plasma Treatment

E. Katz, A. Ulyashin, N. Drozdov, 1999 .

Admittance and Permittivity in Doped Layered TlGaSe_2 Single Crystals

T. G. Mammadov, N. Drozdov, T. Kołtunowicz, 2014 .

Photoluminescence of Silicon Annealed at Low Temperatures (420 to 550 °C)

N. Drozdov, A. Patrin, V. Tkachev, 1985, January 16.

Filtration studies on cores and sand packed tubes from the Urengoy field for determining the efficiency of simultaneous water and gas injection on formation when extracting condensate from low-pressure reservoirs and oil from oil rims

N. Drozdov, 2022, Записки Горного института.

Band edge photoluminescence of undoped and doped TlInS2 layered crystals

V. Grivickas, N. Drozdov, K. Gulbinas, 2017 .

Impurities and defects in multicrystalline silicon for solar cells: low-temperature photoluminescence investigations

R. Job, A. Ulyashin, A. Mudryi, 2002 .

Recombination radiation on dislocations in silicon

N. A. Drozdov, N. Drozdov, A. A. Patrin, 1976 .

On the nature of the dislocation luminescence in silicon

N. Drozdov, A. Patrin, V. Tkachev, 1977 .

Electron-hole drops in dislocational silicon

N. Drozdov, A. Fedotov, 2003 .

Electron–hole drops in silicon with dislocations

N. Drozdov, A. Fedotov, 2002 .

Analysis of dislocation and point defect interaction in silicon over radiative recombination spectra

N. Drozdov, A. Patrin, E. V. Mel’nikova, 1988 .

Modification of the Dislocation Luminescence Spectrum by Oxygen Atmospheres in Silicon

V. Tkachev, N. Drozdov, A. Patrin, 1981, March 16.

Optical Absorption and Raman Scattering in Doped Crystals TlGaSe2 and TlInS2

N. A. Drozdov, O. V. Korolek, S. A. D. Kaabi, 2018 .