J. Pangrác

K. Heime, J. Oswald, P. Christol, 2000, ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386).

Ultrathin Nanocrystalline Diamond Films with Silicon Vacancy Color Centers via Seeding by 2 nm Detonation Nanodiamonds.

B. Rezek, A. Kromka, O. Vaněk, 2017, ACS applied materials & interfaces.

Simultaneous characterization of defect states in CVD diamond by PDS, EPR, Raman and photocurrent spectroscopies

M. Vaněček, M. Nesladek, J. Rosa, 1998 .

Vapor Pressures of (3-(Dimethylamino)propyl)dimethylindium, (tert-Butylimino)bis(diethylamino)cyclopentadienyltantalum, and (tert-Butylimino)tris(ethylmethylamino)tantalum

J. Pangrác, K. Růžička, M. Fulem, 2014 .

Photovoltage spectroscopy of InAs/GaAs quantum dot structures

J. Oswald, J. Toušek, J. Toušková, 2002 .

Influence of photon recycling on photovoltage spectra of GaSb diodes

V. Jurka, J. Toušek, J. Toušková, 2004 .

Charge transport study and spectral response of GaSb/GaAs heterojunctions prepared by MOVPE

D. Kindl, J. Toušek, J. Toušková, 2003 .

Structural and photoluminescent properties of low temperature InAs buffer layer grown by MOVPE on GaAs substrates

P. Komninou, T. Karakostas, J. Pangrác, 2014 .

Microwave radiation absorption by 2D-electrons in the type II composite InAs/GaSb/AlSb quantum wells in a magnetic field

M. Mikhailova, A. Hospodková, J. Pangrác, 2016 .

Relation between Ga Vacancies, Photoluminescence, and Growth Conditions of MOVPE-Prepared GaN Layers

M. Liedke, M. Butterling, A. Hospodková, 2022, Materials.

Magneto-photoluminescence study of electronic transitions in InAs/GaAs quantum dot layers

J. Oswald, J. Pangrác, T. Šimeček, 2002 .

Lasers with δ InAs layers in GaAs

P. Hazdra, J. Oswald, O. Petříček, 2002 .

InAs/GaAs lasers with very thin active layer

J. Oswald, O. Petříček, J. Pangrác, 2000 .

Deep levels in GaAs due to Si δ doping

P. Hubík, J. Pangrác, J. Mares, 2000 .

Vapor pressures of dimethylcadmium, trimethylbismuth, and tris(dimethylamino)antimony

J. Pangrác, K. Růžička, M. Fulem, 2013 .

Luminescence redshift of thick InGaN/GaN heterostructures induced by the migration of surface adsorbed atoms

A. Hospodková, T. Hubáček, J. Pangrác, 2021, Journal of Crystal Growth.

Optical characterisation of MOVPE grown vertically correlated InAs/GaAs quantum dots

Pavel Hazdra, J. Oswald, Eduard Hulicius, 2007, Microelectron. J..

Room-temperature electroluminescence of AlSb/InAsSb single quantum wells grown by metal organic vapor phase epitaxy

K. D. Moiseev, Maya P. Mikhailova, Evgenii V. Ivanov, 2006 .

Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures

P. Hazdra, J. Oswald, A. Hospodková, 2011 .

InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots

P. Hazdra, J. Oswald, A. Hospodková, 2010 .

Influence of capping layer thickness on electronic states in self assembled MOVPE grown InAs quantum dots in GaAs

P. Hazdra, J. Oswald, A. Hospodková, 2009 .

Lateral shape of InAs/GaAs quantum dots in vertically correlated structures

J. Oswald, J. Humlíček, A. Hospodková, 2007 .

Vertical transport in type-II heterojunctions with InAs/GaSb/AlSb composite quantum wells in a high magnetic field

L. V. Danilov, Alice Hospodková, Jiří Pangrác, 2017 .

InAs/GaSb/AlSb composite quantum well structure preparation with help of reflectance anisotropy spectroscopy

Maya P. Mikhailova, Igor V. Kochman, A. I. Veinger, 2017 .

Effect of the lower and upper interfaces on the quality of InAs/GaAs quantum dots

J. Oswald, P. Komninou, A. Hospodková, 2014 .

Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design

P. Hubík, A. Hospodková, T. Hubáček, 2021 .

[Urethral catheter as a risk factor of urologic complications after total knee arthoplasty--the retrospective analysis].

J. Pangrác, M. Hrubina, J. Hrubinová, 2012, Rozhledy v Chirurgii.

Integral and local density of states of InAs quantum dots in GaAs/AlGaAs heterostructure observed by ballistic electron emission spectroscopy near one-electron ground state

F. Šroubek, J. Pangrác, J. Vanis, 2013 .

A secret luminescence killer in deepest QWs of InGaN/GaN multiple quantum well structures

J. Oswald, M. Liedke, M. Butterling, 2020 .

Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface

A. Hospodkova, E. Hulicius, M. Mikhailova, 2010 .

Vapor pressure of germanium precursors

S. Rushworth, J. Pangrác, K. Růžička, 2008 .

Vapour pressure and heat capacities of metal organic precursors, Y(thd)3 and Zr(thd)4

J. Pangrác, K. Růžička, M. Fulem, 2004 .

Vapor pressure of metal organic precursors

S. Rushworth, J. Pangrác, K. Růžička, 2003 .

InAs/GaAs multiple quantum dot structures grown by LP-MOVPE

J. Oswald, J. Pangrác, I. Drbohlav, 2000 .

The luminescence behaviour of porous silicon layers

J. Pangrác, M. Nikl, J. Oswald, 1993 .

Depth profile of acceptor concentration in InGaN/GaN multiple quantum wells

J. Oswald, A. Hospodková, T. Hubáček, 2021 .

Electron mobility in GaN layers and HEMT structure optimized by MOVPE technological parameters

P. Hubík, A. Hospodková, T. Hubáček, 2022, Journal of Crystal Growth.

Type I–type II band alignment of a GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain-reducing layer composition

P. Hazdra, J. Oswald, A. Hospodková, 2013 .

Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications

J. Oswald, A. Hospodková, J. Pangrác, 2017 .

Growth and properties of the MOVPE GaAs/InAs/GaAsSb quantum dot structures

J. Oswald, A. Hospodková, J. Pangrác, 2016 .

InAs/GaAs QUANTUM DOTS COVERED BY GaAsSb STRAIN REDUCING LAYER

J. Oswald, A. Hospodková, J. Pangrác, 2012 .

1.3 m emission from InAs/GaAs quantum dots

J. Oswald, J. Humlíček, A. Hospodková, 2006 .

Combined vertically correlated InAs and GaAsSb quantum dots separated by triangular GaAsSb barrier

J. Oswald, P. Komninou, A. Hospodková, 2013 .

Growth and properties of InAs/InxGa1−xAs/GaAs quantum dot structures

J. Oswald, A. Hospodková, J. Pangrác, 2008 .

Surface processes during growth of InAs/GaAs quantum dot structures monitored by reflectance anisotropy spectroscopy

J. Oswald, A. Hospodková, J. Pangrác, 2010 .

Ultrathin InAs and modulated InGaAs layers in GaAs grown by MOVPE studied by photomodulated reflectance spectroscopy

P. Hazdra, J. Pangrác, J. Voves, 2006 .

Lasers with thin strained InAs layers in GaAs electro-optical characterisation and operation at elevated temperatures

P. Hazdra, J. Oswald, A. Hospodková, 2004 .

InAs δ-layer structures in GaAs grown by MOVPE and characterised by luminescence and photocurrent spectroscopy

P. Hazdra, J. Oswald, J. Pangrác, 2003 .

General overview of GaN devices and transport properties of AlGaN/GaN HEMT structures - impact of dislocation density and improved design

P. Hubík, A. Hospodková, T. Hubáček, 2021, NANOCON 2021 Conference Proeedings.

Epitaxial growth on porous GaAs substrates

J. Grym, J. Pangrác, K. Piksová, 2013 .

Devices based on InGaN/GaN multiple quantum well for scintillator and detector applications

Michael Heuken, Martin Nikl, Christophe Dujardin, 2016, Conference on Sensors, MEMS and Electro-Optic Systems.

Influence of growth rate on charge transport in GaSb homojunctions prepared by metalorganic vapor phase epitaxy

Pavel Hubík, Jiří Pangrác, Eduard Hulicius, 2004 .

Absolute energy levels in nanodiamonds of different origins and surface chemistries

B. Rezek, A. Kromka, H. Hoppe, 2023, Nanoscale advances.

GaSb based lasers operating near 2.3 microm for high resolution absorption spectroscopy.

J. Oswald, O. Petříček, J. Pangrác, 2005, Spectrochimica acta. Part A, Molecular and biomolecular spectroscopy.

OUT-OF-PLANE WEAK LOCALIZATION IN TWO-DIMENSIONAL ELECTRON STRUCTURES

P. Hubík, J. Pangrác, J. Kristofik, 1998 .