O. I. Fitsych

发表

Temperature spectra of conductance of Ge/Si p-i-n structures with Ge quantum dots

I. Izhnin, O. I. Fitsych, A. Pishchagin, 2017, Nanoscale Research Letters.

Ion etching of HgCdTe: Properties, patterns and use as a method for defect studies

I. Izhnin, O. I. Fitsych, A. Voitsekhovskii, 2017 .

Long-term stability of electron concentration in HgCdTe-based p–n junctions fabricated with ion etching

I. Izhnin, O. I. Fitsych, K. Mynbaev, 2015 .

Background donor concentration in HgCdTe

I. Izhnin, O. I. Fitsych, K. Mynbaev, 2015 .

Single-Element 2D Materials beyond Graphene: Methods of Epitaxial Synthesis

I. Izhnin, O. I. Fitsych, A. Voitsekhovskii, 2022, Nanomaterials.

Ion implantation and ion milling in MBE Hg1−xCdxTe films

D. V. Grigorjev, O. I. Fitsych, A. Voitsekhovskii, 2012 .

Interaction of a Defect Density Wave With a Modulated Structure in Incommensurate-Phase Crystals

O. I. Fitsych, I. Polovinko, S. Sveleba, 2005 .

Optical transmission coefficient of crystalline [N(CH3)4]2MeCl4 in the incommensurate phase

O. I. Fitsych, S. Sveleba, I. Katerynchuk, 2011 .

Specific Features of Light Scattering in [N(CH3)4]2CuCl4 Crystals with an Incommensurable Phase

O. I. Fitsych, I. Polovinko, S. Sveleba, 2000 .

Nanostructures with Ge–Si quantum dots for infrared photodetectors

I. Izhnin, O. I. Fitsych, A. Voitsekhovskii, 2018, Opto-Electronics Review.

Accumulation of Arsenic Implantation-Induced Donor Defects in Hg0.7Cd0.3Te Heteroepitaxial Structures

I. Izhnin, O. I. Fitsych, A. Voitsekhovskii, 2021, Journal of Electronic Materials.

Hall-effect studies of modification of HgCdTe surface properties with ion implantation and thermal annealing

I. Izhnin, O. I. Fitsych, A. Voitsekhovskii, 2020 .

Nano-size defect layers in arsenic-implanted and annealed HgCdTe epitaxial films studied with transmission electron microscopy

I. Izhnin, O. I. Fitsych, A. Voitsekhovskii, 2020, Applied Nanoscience.

Nano-size defects in arsenic-implanted HgCdTe films: a HRTEM study

I. Izhnin, O. I. Fitsych, A. Voitsekhovskii, 2019, Applied Nanoscience.

Electrical profiling of arsenic-implanted HgCdTe films performed with discrete mobility spectrum analysis

V. G. Remesnik, I. Izhnin, O. I. Fitsych, 2019, Semiconductor Science and Technology.

Transmission Electron Microscopy Study of HgTe/CdHgTe Quantum Wells

I. Izhnin, O. I. Fitsych, A. Voitsekhovskii, 2018, 2018 IEEE 8th International Conference Nanomaterials: Application & Properties (NAP).

Optical and electrical studies of arsenic–implanted HgCdTe films grown with molecular beam epitaxy on GaAs and Si substrates

I. Izhnin, O. I. Fitsych, K. Mynbaev, 2017 .

Photoluminescence of HgCdTe nanostructures grown by molecular beam epitaxy on GaAs

I. Izhnin, O. I. Fitsych, K. Mynbaev, 2013 .

TEM studies of structural defects in HgTe/HgCdTe quantum wells

I. Izhnin, O. I. Fitsych, A. Voitsekhovskii, 2019, Applied Nanoscience.

Electrical properties of HgCdTe films grown by MOCVD and doped with as

I. Izhnin, O. I. Fitsych, K. Mynbaev, 2013 .

Single-photon avalanche diode detectors based on group IV materials

I. Izhnin, O. I. Fitsych, A. Voitsekhovskii, 2021, Applied Nanoscience.