J. Mathews

发表

Morphological stability during solidification of silicon incorporating metallic impurities

S. Gradečak, M. Aziz, D. Recht, 2014 .

Polarization-dependent electromagnetic responses of ultrathin and highly flexible asymmetric terahertz metasurfaces

Imad Agha, Joshua A. Burrow, Andrew Sarangan, 2017, 1710.06714.

Thermally Tunable Far-Infrared Metasurfaces Enabled by Ge2Sb2Te5 Phase-Change Material

Gary A. Sevison, A. Urbas, A. Sarangan, 2018, 2018 IEEE Research and Applications of Photonics In Defense Conference (RAPID).

Maximum Ti concentrations in Si quantified with atom probe tomography (APT)

A. Akey, J. Warrender, J. Mathews, 2021 .

Incorporation of gold into silicon by thin film deposition and pulsed laser melting

H. Efstathiadis, J. Warrender, J. Mathews, 2016 .

Effect of layer thickness on device response of silicon heavily supersaturated with sulfur

T. Buonassisi, M. Aziz, A. Akey, 2016 .

On the limits to Ti incorporation into Si using pulsed laser melting

H. Efstathiadis, M. Aziz, A. Akey, 2014 .

Direct versus indirect optical recombination in Ge films grown on Si substrates

Liying Jiang, R. Beeler, J. Kouvetakis, 2011, 1106.3300.

Room temperature emission spectroscopy of GeSn waveguides under optical pumping

A. Sarangan, J. Kouvetakis, J. Menéndez, 2022, AIP Advances.

Power-Dependent Investigation of Photo-Response from GeSn-Based p-i-n Photodetector Operating at High Power Density

Gary A. Sevison, R. Soref, J. Mathews, 2022, Materials.

Power-Dependent Responsivity of Ge/GeSn/Ge Heterostructure Photodiodes

Gary A. Sevison, J. Mathews, J. Hendrickson, 2018, 2018 IEEE Photonics Society Summer Topical Meeting Series (SUM).

Integrated wavelength locker for tunable laser applications

J. Mathews, E. Chen, B. Su, 2002, The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society.

Practical Materials Chemistry Approaches for Tuning Optical and Structural Properties of Group IV Semiconductors and Prototype Photonic Devices

A. Chizmeshya, J. Tolle, J. Kouvetakis, 2010, IEEE Photonics Journal.

Hyperdoping of Si by ion implantation and pulsed laser melting

J. Mathews, Wenjie Yang, James S. Williams, 2017 .

Room-temperature sub-band gap optoelectronic response of hyperdoped silicon

Jonathan P. Mailoa, T. Buonassisi, M. Aziz, 2014, Nature Communications.

Supersaturating silicon with transition metals by ion implantation and pulsed laser melting

T. Buonassisi, S. Gradečak, S. Charnvanichborikarn, 2013 .

Dynamically tunable single-layer VO2/metasurface based THz cross-polarization converter

J. Mathews, R. Yahiaoui, T. Searles, 2021 .

Direct gap electroluminescence from Si/Ge1−ySny p-i-n heterostructure diodes

J. Tolle, R. Beeler, J. Kouvetakis, 2011 .

Self assembled monolayer and protein adsorption studies on micromachined quartz crystal balances

Srinivas Tadigadapa, Jay Mathews, Abhijat Goyal, 2007, SPIE MOEMS-MEMS.

Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications

Shui-Qing Yu, Junqi Xie, John Kouvetakis, 2009 .

Eigenmode hybridization enables lattice-induced transparency in symmetric terahertz metasurfaces for slow light applications

A. Sarangan, J. Mathews, R. Yahiaoui, 2019, Optics Letters.

Electromagnetically induced transparency control in terahertz metasurfaces based on bright-bright mode coupling

A. Sarangan, J. Mathews, R. Yahiaoui, 2017, 1712.08733.

Complementary metal-oxide semiconductor-compatible detector materials with enhanced 1550 nm responsivity via Sn-doping of Ge/Si(100)

R. Beeler, J. Kouvetakis, J. Menéndez, 2011 .

Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon

John Tolle, John Kouvetakis, Chi Xu, 2010 .

Towards a direct band gap group IV Ge-based material

J. Mathews, T. Tran, James S. Williams, 2019, Materials Science in Semiconductor Processing.

Compositional dependence of the direct and indirect band gaps in Ge1−ySny alloys from room temperature photoluminescence: implications for the indirect to direct gap crossover in intrinsic and n-type materials

C. L. Senaratne, J. Kouvetakis, J. Menéndez, 2014 .

Carrier lifetimes in gold–hyperdoped silicon—Influence of dopant incorporation methods and concentration profiles

Rhoen Fiutak, Meng-ju Sher, J. Warrender, 2022, APL Materials.

Sn-alloying as a means of increasing the optical absorption of Ge at the C- and L-telecommunication bands

V. D'costa, J. Tolle, J. Kouvetakis, 2009 .

High-Performance Near-IR Photodiodes: A Novel Chemistry-Based Approach to Ge and Ge–Sn Devices Integrated on Silicon

J. Tolle, R. Beeler, J. Kouvetakis, 2011, IEEE Journal of Quantum Electronics.

All-optical switching via four-wave mixing Bragg scattering in a silicon platform

J. Mathews, Yun Zhao, I. Agha, 2016, 1611.03937.

Influence of symmetry breaking on Fano-like resonances in high Figure of Merit planar terahertz metafilms

A. Sarangan, J. Mathews, R. Yahiaoui, 2018, 1812.02063.

Ion beam synthesis and photoluminescence study of supersaturated fully-relaxed Ge-Sn alloys

J. Warrender, J. Mathews, L. Smillie, 2020 .

Micromachined silicon structures for single-mode passive alignment

Robert Addison Boudreau, Hongtao Han, Jay Mathews, 1996, Photonics West.

Room-temperature sub-band gap optoelectronic response of hyperdoped silicon

T. Buonassisi, M. Aziz, C. Simmons, 2014, Nature Communications.

All-optical switch based on 4-wave mixing in Si waveguides

J. Mathews, Yun Zhao, I. Agha, 2017, 2017 IEEE Photonics Society Summer Topical Meeting Series (SUM).

Low-power optical logic gate in a silicon waveguide

Imad Agha, Yun Zhao, J. Mathews, 2017, 2017 Conference on Lasers and Electro-Optics (CLEO).