J. Ota

Extremely long carrier lifetime over 200 ns in GaAs wall-inserted type II InAs quantum dots

Y. Okada, T. Motohiro, N. Miyashita, 2012 .

Extremely long carrier lifetime at intermediate states in wall-inserted type II quantum dot absorbers

Y. Okada, N. Miyashita, Y. Takeda, 2012 .

Fabrication of Periodically-Inverted AlGaAs Waveguides for Quasi-Phase-Matched Wavelength Conversion at 1.55 µm

Takashi Kondo, Junya Ota, Tomonori Matsushita, 2009 .

Influence of anisotropic diffusion of Ga and Al atoms during AlGaAs growth for periodically-inverted AlGaAs waveguides

T. Kondo, J. Ota, T. Matsushita, 2012, 2012 Conference on Lasers and Electro-Optics (CLEO).

Periodic modulation of Al composition in a periodically-inverted AlGaAs waveguide

T. Kondo, J. Ota, T. Matsushita, 2011 .

Impact of Photoelastic Effect on Phase-Matching Wavelengths in Periodically-Inverted AlGaAs Waveguides

T. Kondo, J. Ota, T. Matsushita, 2011 .

Quasi-Phase-Matched Second-harmonic Generation in High-Quarity Algaas Waveguides Pumped at 1.55 µm

T. Kondo, J. Ota, T. Matsushita, 2010 .

Over 100 ns intrinsic radiative recombination lifetime in type II InAs/GaAs1−xSbx quantum dots

Y. Okada, T. Motohiro, N. Miyashita, 2012 .