S. Juillaguet

发表

Cubic SiC formation on the C-face of 6H-SiC (0001) substrates

M. Syväjärvi, R. Yakimova, R. Vasiliauskas, 2012 .

Comparative micro-photoluminescence investigation of ZnO hexagonal nanopillars and the seeding layer grown on 4H-SiC

M. Syväjärvi, R. Yakimova, G. Yazdi, 2012 .

Low Temperature Photoluminescence Investigation of 3-Inch SiC Wafers for Power Device Applications

A. Henry, P. Brosselard, S. Juillaguet, 2012 .

Optical investigation methods for SiC device development: application to stacking faults diagnostic in active epitaxial layers

S. Juillaguet, J. Camassel, 2007 .

Doping effect on the optical properties of ZnO nanostructures

J. Wen, S. Juillaguet, M. Stoehr, 2007 .

Investigation of porous silicon as a new compliant substrate for 3C-SiC deposition

B. Fraisse, P. Colter, S. Juillaguet, 1999 .

Experimental characterization of interface roughness in strained InGaAs/InP MQWs after a growth interruption sequence

A. Kohl, F. Baumann, B. Fraisse, 1993, 1993 (5th) International Conference on Indium Phosphide and Related Materials.

Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVD

L. Konczewicz, S. Juillaguet, J. Camassel, 2014 .

Raman Investigation of Aluminum-Doped 4H-SiC

L. Konczewicz, S. Juillaguet, J. Camassel, 2013 .

Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition

H. B. Weber, G. Ferro, T. Chassagne, 2016 .

Investigation of residual impurity content in GaAs layers grown by VPE under very low pressure conditions

S. Juillaguet, J. Camassel, M. Deschler, 1991 .

Influence of AlN thickness on AlGaN epilayer grown by MOCVD

L. Konczewicz, K. Baskar, S. Juillaguet, 2016 .

Optical investigation of residual doping species in 6H and 4H-SiC layers grown by chemical vapor deposition

J. Bluet, G. Ferro, E. Neyret, 1999 .

Splitting of type-I (N-B, P-Al) and type-II (N-Al, N-Ga) donor-acceptor pair spectra in 3C-SiC

I. Ivanov, Jianwu Sun, S. Juillaguet, 2011 .

Combined structural and optical studies of stacking faults in 4H‐SiC layers grown by chemical vapour deposition

T. Chassagne, E. Polychroniadis, S. Juillaguet, 2008 .

Cathodoluminescence investigation of stacking faults extension in 4H‐SiC

T. Chassagne, S. Juillaguet, J. Camassel, 2007 .

Screening the built-in electric field in 4H silicon carbide stacking faults

T. Chassagne, M. Albrecht, S. Juillaguet, 2007 .

Application of LTPL Investigation Methods to CVD-Grown SiC†

S. Juillaguet, J. Camassel, M. Zielinski, 2006 .

Optical assessment of purity improvement effects in bulk 6H and 4H-SiC wafers grown by physical vapor transport

J. Bluet, P. Grosse, M. Couchaud, 1999 .

p-type conductivity in GaN:Zn monocrystals grown by ammonothermal method

R. Kucharski, L. Konczewicz, S. Juillaguet, 2021 .

Optical investigation of stacking faults in 4H-SiC epitaxial layers: Comparison of 3C and 8H polytypes

S. Juillaguet, J. Camassel, T. Robert, 2009 .

Optical properties of as‐grown and process‐induced stacking faults in 4H‐SiC

S. Juillaguet, J. Camassel, 2008 .

Control of epitaxial layers grown on 4H–SiC: from 3C microcrystalline inclusions to type II quantum well structures

Y. Monteil, S. Juillaguet, J. Camassel, 2005 .

Specific Aspects of Type II Heteropolytype Stacking Faults in SiC

S. Juillaguet, J. Camassel, 2005 .

Nonlinear dependence of the magnetophotoluminescence energies of asymmetricGaAs∕Ga0.67Al0.33Asquantum wells on an external magnetic field

S. Juillaguet, C. Chaubet, W. Zawadzki, 2007 .

Non-destructive approaches to interdiffusion phenomena across GaInAs/GaInAsP interfaces: photoluminescence vs. Raman

F. Alsina, S. Juillaguet, J. Pascual, 1993 .

Optical tools for intermixing diagnostic: application to InGaAs/InGaAsP microstructures

F. Alsina, S. Juillaguet, J. Pascual, 1993 .

Photoluminescence, cathodo-luminescence and micro-Raman spectroscopy of as-grown stacking faults in 4H-SiC

T. Chassagne, S. Juillaguet, J. Camassel, 2007 .

Hexamethyldisilane/propane versus silane/propane precursors: application to the growth of high-quality 3C–SiC on Si

G. Ferro, S. Rushworth, E. Polychroniadis, 2003 .

Investigation of <1,1,-2,0> Epitaxial Layers Grown on a-Cut 4H-SiC Substrates

Y. Monteil, S. Juillaguet, J. Camassel, 2004 .

Growth at High Rates and Characterization of Bulk 3C-SiC Material

G. Ferro, Y. Monteil, S. Juillaguet, 2003 .

Investigation of Aluminum Incorporation in 4H-SiC Epitaxial Layers

T. Chassagne, M. Portail, A. Michon, 2014 .

Technical aspects of 〈$ \bf 11\bar 20 $〉 4H–SiC MOSFET processing

D. Tournier, Y. Monteil, S. Juillaguet, 2005 .

Comparative Studies of ‹0001› 4H-SiC Layers Grown with either Silane or HexaMethylDiSilane / Propane Precursor Systems

S. Rushworth, Y. Monteil, S. Juillaguet, 2004 .

Characterization of Bulk <111> 3C-SiC Single Crystals Grown on 4H-SiC by the CF-PVT Method

D. Chaussende, L. Latu-Romain, M. Pons, 2006 .

Comparative Evaluation of Free-Standing 3C-SiC Crystals

G. Ferro, E. Polychroniadis, Y. Monteil, 2005 .

Investigation of 2 Inch SiC Layers Grown in a Resistively-Heated LP-CVD Reactor with Horizontal "Hot-Walls"

A. Leycuras, T. Chassagne, S. Juillaguet, 2004 .

Prospects for 3C-SiC bulk crystal growth

D. Chaussende, G. Ferro, M. Pons, 2008 .

Strain and wafer curvature of 3C‐SiC films on silicon: influence of the growth conditions

A. Leycuras, T. Chassagne, M. Portail, 2006 .

Potential of HMDS/C3H8 Precursor System for the Growth of State of the Art Heteroepitaxial 3C-SiC Layers on Si(100)

G. Ferro, S. Rushworth, E. Polychroniadis, 2004 .

Nitrogen doping of 3C-SiC thin films grown by CVD in a resistively heated horizontal hot-wall reactor

T. Chassagne, M. Portail, S. Juillaguet, 2008 .

Control of 3C–SiC/Si wafer bending by the “checker‐board” carbonization method

G. Ferro, A. Leycuras, T. Chassagne, 2005 .

Single-Domain 3C-SiC Epitaxially Grown on 6H-SiC by the VLS Mechanism

D. Chaussende, G. Ferro, E. Polychroniadis, 2006 .

Oscillations of 2D electron density in GaAs/Ga0.67Al0.33As heterostructures in the QHE regime

M. Sadowski, S. Juillaguet, B. Etienne, 1999 .

Discrete states of conduction electrons bound to magnetoacceptors in quantum wells

S. Juillaguet, C. Chaubet, W. Zawadzki, 2003 .

Quantum confinement effect of ZnO nanocrystallites embedded in In2O3 films

J. Wen, S. Juillaguet, M. Marshall, 2008 .

Nitrogen Incorporation during Seeded Sublimation Growth of 4H-SiC and 6H-SiC

D. Chaussende, E. Sarigiannidou, S. Juillaguet, 2015 .

Finite interface effects for thin GaInAs/InP quantum wells grown by LP-MOVPE with a growth interruption sequence

H. Kurz, D. Grützmacher, S. Juillaguet, 1991 .

Optical properties of Ga2O3 doped ZnO nanoribbons

J. Wen, S. Juillaguet, M. Stoehr, 2005 .

Negative Magnetoresistivity in Highly Doped n-Type GaN

M. Boćkowski, L. Konczewicz, S. Juillaguet, 2022, Materials.

Structural properties and dielectric function of graphene grown by high-temperature sublimation on 4H-SiC(000-1)

R. Yakimova, M. Schubert, S. Juillaguet, 2015 .

Room temperature luminescence properties of fluorescent SiC as white light emitting diode medium

M. Syväjärvi, R. Yakimova, S. Kamiyama, 2012 .

Shockley-Frank stacking faults in 6H-SiC

M. Syväjärvi, R. Yakimova, Jianwu Sun, 2012 .

Low Temperature Photoluminescence Signature of Stacking Faults in 6H-SiC Epilayers Grown on Low Angle Off-Axis Substrates

M. Syväjärvi, R. Yakimova, V. Jokubavičius, 2012 .

Combined effects of Ga, N, and Al codoping in solution grown 3C–SiC

G. Ferro, Jianwu Sun, S. Juillaguet, 2010 .

LTPL Investigation of N-Ga and N-Al Donor-Acceptor Pair Spectra in 3C-SiC Layers Grown by VLS on 6H-SiC Substrates

G. Ferro, Jianwu Sun, S. Juillaguet, 2010 .

Impact of extended defects on Hall and magnetoresistivity effects in cubic silicon carbide

R. Vasiliauskas, S. Juillaguet, A. Mekys, 2012 .

Influence of Site Competition Effects on Dopant Incorporation during Chemical Vapor Deposition of 4H-SiC Epitaxial Layers

T. Chassagne, M. Portail, A. Michon, 2015 .

Dilute Aluminium Concentration in 4H-SiC: from SIMS to LTPL Measurements

Y. Monteil, S. Juillaguet, J. Camassel, 2003 .

Fabrication and characterization of high quality undoped and Ga2O3-doped ZnO thin films by reactive electron beam co-evaporation technique

A. Khoury, S. Juillaguet, P. Combette, 2005 .

Low Doped 3C-SiC Layers Deposited by the Vapour-Liquid-Solid Mechanism on 6H-SiC Substrates

G. Ferro, S. Juillaguet, J. Camassel, 2010 .

Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor deposition

G. Ferro, J. Pezoldt, S. Juillaguet, 2014, 1407.3222.

Effect of initial substrate conditions on growth of cubic silicon carbide

G. Ferro, M. Syväjärvi, R. Yakimova, 2011 .

Investigation of Low Doped n-Type and p-Type 3C-SiC Layers Grown on 6H-SiC Substrates by Sublimation Epitaxy

M. Syväjärvi, R. Yakimova, Jianwu Sun, 2010 .

Characterization of a 3C-SiC Single Domain Grown on 6H-SiC(0001) by a Vapor-Liquid-Solid Mechanism

D. Chaussende, G. Ferro, E. Polychroniadis, 2006 .

Fluorescent silicon carbide as an ultraviolet-to-visible light converter by control of donor to acceptor recombinations

S. Kamiyama, V. Jokubavičius, S. Juillaguet, 2012 .

Characterization of Ge-Doped Homoepitaxial Layers Grown by Chemical Vapor Deposition

H. B. Weber, G. Ferro, M. Krieger, 2014 .

p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum

T. Chassagne, M. Portail, A. Michon, 2016 .

Influence of the C/Si Ratio on the Dopant Concentration and Defects in CVD Grown 3C‐SiC Homoepitaxial Layers

G. Ferro, E. Polychroniadis, S. Juillaguet, 2010 .

Influence of Post-Growth Annealing on the Defects Nature and Distribution in VLS Grown (111) 3C-SiC Layers

G. Ferro, E. Polychroniadis, S. Juillaguet, 2011 .

TEM and LTPL Investigations of 3C-SiC Layers Grown by LPE on (100) and (111) 3C-SiC Seeds

D. Chaussende, G. Ferro, E. Polychroniadis, 2010 .

Seeding Layer Influence on the Low Temperature Photoluminescence Intensity of 3C-SiC Grown on 6H-SiC by Sublimation Epitaxy

G. Ferro, M. Syväjärvi, R. Vasiliauskas, 2012 .

Optical Characterization of VLS+CVD Grown 3C-SiC Films by Non-Linear and Photoluminescence Techniques

G. Ferro, K. Jarašiūnas, S. Juillaguet, 2010 .

Defect-induced polytype transformations in LPE grown SiC epilayers on (1 1 1) 3C-SiC seeds grown by VLS on 6H-SiC

D. Chaussende, G. Ferro, E. Polychroniadis, 2009 .

Comparative Study of p-Type 4H-SiC Grown on n-Type and Semi Insulating 4H-SiC Substrates

T. Chassagne, L. Konczewicz, S. Juillaguet, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

Evaluation of p-Type Doping for (1,1,-2,0) Epitaxial Layers Grown on α-Cut (1,1,-2,0) 4H-SiC Substrates

Y. Monteil, S. Juillaguet, J. Camassel, 2005 .

Comparative Study of n-Type 4H-SiC: Raman vs Photoluminescence Spectroscopy

S. Juillaguet, R. Arvinte, M. Zielinski, 2015 .

Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC

T. Chassagne, L. Konczewicz, S. Juillaguet, 2016 .

Intensity Ratio of the Doublet Signature of Excitons Bound to 3C-SiC Stacking Faults in a 4H-SiC Matrix

S. Juillaguet, J. Camassel, 2005 .

4H-SiC Material for Hall Effect and High-Temperature Sensors Working in Harsh Environments

L. Di Cioccio, S. Juillaguet, J. Pernot, 2002 .

Electrical transport properties of p‐type 4H‐SiC

T. Chassagne, L. Konczewicz, S. Juillaguet, 2017 .

Optical properties of as‐grown and process‐induced stacking faults in 4H‐SiC

S. Juillaguet, J. Camassel, 2008 .

Optical Investigation of Stacking Faults and Micro-Crystalline Inclusions In-Low-Doped 4H-SiC Layers

Y. Monteil, S. Juillaguet, J. Pernot, 2004 .

Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers

A. Henry, E. Polychroniadis, S. Juillaguet, 2011 .

Electric-Field Screening Effects in the Micro-Photoluminescence Spectra of As-Grown Stacking Faults in 4H-SiC

T. Chassagne, S. Juillaguet, J. Camassel, 2007 .

Influence of silane flow on MOVPE grown GaN on sapphire substrate by an in situ SiN treatment

B. Jani, S. Juillaguet, Z. Benzarti, 2004 .

Effect of SiN treatment on GaN epilayer quality

B. Jani, S. Juillaguet, Z. Benzarti, 2003 .

Low temperature photoluminescence investigations of 3C-SiC quasi-substrates grown on hexagonal 6H-SiC seeds

G. Ferro, M. Syväjärvi, R. Yakimova, 2009 .

Optical Investigation of Defect Filtering Effects in Bulk 3C-SiC Crystals Grown by the CF-PVT Method Using a Necking Technique

T. Ouisse, D. Chaussende, Jianwu Sun, 2011 .

Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT

D. Chaussende, S. Juillaguet, A. Tiberj, 2009 .

Optical Investigation of 3C-SiC Hetero-Epitaxial Layers Grown by Sublimation Epitaxy under Gas Atmosphere

M. Syväjärvi, V. Jokubavičius, S. Juillaguet, 2014 .

Structural and Optical Investigation of VLS Grown (111) 3C-SiC Layers on 6H-SiC Substrates in Sn-Based Melts

G. Ferro, E. Polychroniadis, S. Juillaguet, 2011 .

Influence of Growth Temperature on Site Competition Effects during Chemical Vapor Deposition of 4H-SiC Layers

T. Chassagne, M. Portail, A. Michon, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

Stacking faults in intrinsic and N-doped 4H–SiC: true influence of the N-doping on their multiplicity

S. Juillaguet, G. Regula, T. Neisius, 2013 .

Optical Characterization of p-Type 4H-SiC Epilayers

K. Jarašiūnas, S. Juillaguet, R. Arvinte, 2015 .

High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials

J. Brault, S. Matta, B. Damilano, 2020, Journal of Applied Physics.

6H-Type Zigzag Faults in Low-Doped 4H-SiC Epitaxial Layers

A. Henry, E. Polychroniadis, S. Juillaguet, 2010 .