T. Hsu

发表

High optical property vertically aligned InAs quantum dot structures with GaAsSb overgrown layers

J. Chyi, Wei-Sheng Liu, Y. Liao, 2011 .

Enhanced light emission from InAs quantum dots in single-defect photonic crystal microcavities at room temperature

J. Chyi, Jui‐Fen Chang, Chien-Chieh Lee, 2005 .

Oxygen doping in close-spaced-sublimed CdTe thin films for photovoltaic cells

H. Hwang, T. Hsu, H. Ueng, 1986 .

Formation of Ge quantum dots array in layer-cake technique for advanced photovoltaics

T. Hsu, P. W. Li, Y. Chang, 2010, Nanotechnology.

The Study of p-d Hybridization of Sulfur-Annealed Copper Indium Disulfide by Photoreflectance

T. Hsu, 1993 .

Tuning the energy levels of self-assembled inas quantum dots by rapid thermal annealing

J. Chyi, N. Yeh, Wen‐Hao Chang, 2000 .

Origins of nonzero multiple photon emission probability from single quantum dots embedded in photonic crystal nanocavities

J. Chyi, Hsiang-Szu Chang, Wen‐Hao Chang, 2009 .

Optical control of the exciton charge states of single quantum dots via impurity levels

J. Chyi, N. Yeh, Hsiang-Szu Chang, 2005 .

Optical properties of stacked Ge/Si quantum dots with different spacer thickness grown by chemical vapor deposition

L. Lai, Wen‐Hao Chang, Wen-Yen Chen, 2004 .

Room-temperature electroluminescence at 1.3 and 1.5 /spl mu/m from Ge/Si quantum-dot light-emitting diode

M. Tsai, Hsiang-Szu Chang, L. Lai, 2003, 2003 International Symposium on Compound Semiconductors.

Effects of spacer thickness on optical properties of stacked Ge/Si quantum dots grown by chemical vapor deposition

L. Lai, Wen‐Hao Chang, Wen-Yen Chen, 2003 .

Polarization of single InGaAs quantum dots in photonic crystal nanocavities

J. Chyi, Hsiang-Szu Chang, T. Hsu, 2007, 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials.

Optical properties of indium nitride nanorods prepared by chemical-beam epitaxy

J. Chyi, Hsiang-Szu Chang, S. Kuo, 2006 .

Single photon emission from an InGaAs quantum dot precisely positioned on a nanoplane

J. Chyi, Hsiang-Szu Chang, Wen‐Hao Chang, 2007 .

Optical emission from individual InGaAs quantum dots in single-defect photonic crystal nanocavity

J. Chyi, Hsiang-Szu Chang, Wen‐Hao Chang, 2005 .

Single mode operation 1.3 μm InAs quantum dot lasers based on small mode volume qL2 photonic crystal nano-cavity

J. Chyi, M. Shih, T. Hsu, 2011, The 4th IEEE International NanoElectronics Conference.

Photoluminescence of self-assembled InAs quantum dots embedded in photonic crystal nanocavities with shifted air holes.

J. Chyi, Hsiang-Szu Chang, Wen-Yen Chen, 2010, Nanotechnology.

An electrically driven quasi-L2 photonic crystal nano-cavity with a small mode volume

J. Chyi, Wen-Yen Chen, T. Hsu, 2009, 2009 IEEE International Conference on Indium Phosphide & Related Materials.

Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures

J. Chyi, N. Yeh, T. Nee, 2000 .

The effects of AlN buffer on the properties of InN epitaxial films grown on Si(111) by plasma-assisted molecular-beam epitaxy

S. Gwo, T. Hsu, Chung-Lin Wu, 2006 .

Room temperature study of low temperature grown Al0.3Ga0.7As/GaAs multiple quantum wells by modulation reflectance

C. C. Wu, W. C. Lee, T. Hsu, 2000 .

Characterization of GaN microstructures grown by plasma-assisted molecular beam epitaxy

T. Hsu, I. Lo, W. Pang, 2013 .

Growth of sparse arrays of narrow GaN nanorods hosting spectrally stable InGaN quantum disks

Kuei-Hsien Chen, Yen‐Ting Chen, Wen‐Hao Chang, 2012 .

Catalyst-free growth of indium nitride nanorods by chemical-beam epitaxy

J. Chyi, S. Kuo, T. Hsu, 2006 .

Site‐controlled InGaAs quantum dots grown on a GaAs multi‐faceted microstructure for single photon emissions

J. Chyi, Hsiang-Szu Chang, T. Hsu, 2008 .

Single Photon Emission From an InGaAs Quantum Dot Precisely Positioned on a Nano-Plane

J. Chyi, Hsiang-Szu Chang, Wen-Yen Chen, 2007, 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials.

Growth of low density InGaAs quantum dots for single photon sources by metal–organic chemical vapour deposition

J. Chyi, N. Yeh, Hsiang-Szu Chang, 2006 .

Single-photon emissions from individual InGaAs quantum dots in photonic crystal microcavity

J. Chyi, Hsiang-Szu Chang, T. Hsu, 2005, International Quantum Electronics Conference, 2005..

WANNIER EXCITON BINDING ENERGIES IN GAAS/ALXGA1-XAS QUANTUM WELLS

P. Hui, T. Hsu, N. Lu, 1991 .

Designer germanium quantum dot phototransistor for near infrared optical detection and amplification

T. Hsu, P. W. Li, W. Chang, 2014, 2014 Silicon Nanoelectronics Workshop (SNW).

The Fermi level of annealed low-temperature GaAs on Si-δ-doped GaAs grown by molecular beam epitaxy

J. Chyi, W. C. Lee, T. Hsu, 1998 .

Photoreflectance of low-temperature-grown GaAs on Si-δ-doped GaAs

J. Chyi, W. C. Lee, T. Hsu, 1997 .

Photoreflectance study of Si delta‐doped low‐temperature GaAs grown by molecular beam epitaxy

W. C. Lee, T. Hsu, C. Chang, 1995 .

Coherence properties of InAs quantum dot emissions from quasi-L2 photonic crystal nanocavities

J. Chyi, Hsiang-Szu Chang, T. Hsu, 2010 .

Strain Relaxation during Formation of Ge Nanolens Stacks

R. Goldstein, Sheng-wei Lee, T. Hsu, 2010 .

CMOS-Compatible Generation of Self-Organized 3-D Ge Quantum Dot Array for Photonic and Thermoelectric Applications

Pei-Wen Li, W. Lai, Wen-Yen Chen, 2012, IEEE Transactions on Nanotechnology.

A study of Franz–Keldysh oscillations in the photo reflectance spectrum of the δ‐doped GaAs film

T. Hsu, Chenlong Chen, D. Wang, 1996 .

Self-assembled free-standing colloidal crystals

Hsiang-Szu Chang, Chih-Kai Huang, Wen‐Hao Chang, 2005 .

Room temperature 1.3 and 1.5 μm electroluminescence from Si/Ge quantum dots (QDs)/Si multi-layers

M. Tsai, L. Lai, Sheng-wei Lee, 2004 .

Improved electroluminescence of InAs quantum dots with strain reducing layer

J. Chyi, N. Yeh, T. Nee, 2001 .

Photoreflectance of sulfur-annealed copper indium disulfide

H. Hwang, T. Hsu, J. Lee, 1990 .

A study of the Franz–Keldysh oscillations in electromodulation reflectance of Si-delta-doped GaAs by a fast Fourier transformation

Wen‐Hao Chang, T. Hsu, W. Lee, 1998 .

Electroreflectance study on the polarization field in InGaN/AlInGaN multiple quantum wells

J. Chyi, Wen‐Hao Chang, T. Hsu, 2004 .

Rapid thermal annealing of the through-film silicon implantation on GaAs

F. Huang, T. Hsu, Cheng-Ting Lee, 1991 .

Photoreflection study on the surface electric field of delta-doped GaAs grown by molecular beam epitaxy

T. Hsu, C. P. Lee, K. Chang, 1992 .

Enhancing luminescence efficiency of InAs quantum dots at 1.5 μm using a carrier blocking layer

J. Chyi, Hsiang-Szu Chang, Wen‐Hao Chang, 2006 .

Enhanced thermal stability and emission intensity of InAs quantum dots covered by an InGaAsSb strain-reducing layer

J. Chyi, Wei-Sheng Liu, Wen-Yen Chen, 2006 .

1.55 μm emission from InAs quantum dots grown on GaAs

J. Chyi, N. Yeh, W. Ho, 2005 .

Electroreflectance studies of InAs quantum dots with InxGa1−xAs capping layer grown by metalorganic chemical vapor deposition

J. Chyi, N. Yeh, Wen‐Hao Chang, 2005 .

Hole emission processes in InAs/GaAs self-assembled quantum dots

Wen-Hao Chang, Nien-Tze Yeh, J. Chyi, 2002 .

Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots

Jen-Inn Chyi, T. M. Hsu, Wen-Hao Chang, 2000 .

Type-II Zn1-xMnxSe/ZnSe1-yTey quantum wells

J. Chyi, Chien-Ming Lai, W. Chou, 2003 .

Study of CuInS2 grown by the traveling‐heater method by electrolyte electroreflectance

T. Hsu, 1986 .

Modulation reflectance spectra of CuInS2

H. Hwang, T. Hsu, S. Fan, 1983 .

High extractive single-photon emissions from InGaAs quantum dots on a GaAs pyramid-like multifaceted structure

J. Chyi, Hsiang-Szu Chang, Wen-Yen Chen, 2008, Nanotechnology.

Charging of embedded InAs self-assembled quantum dots by space-charge techniques

J. Chyi, N. Yeh, M. Cheng, 2001 .

Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature

Chung-Lin Wu, Shangjr Gwo, Wen-Hao Chang, 2004 .

Improved growth of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treatments

M. Tsai, Cheewee Liu, Sheng-wei Lee, 2004 .

Piezoelectric Field‐Induced Quantum‐Confined Stark Effect in InGaN/GaN Multiple Quantum Wells

J. Chyi, Chien-Chieh Lee, Wen‐Hao Chang, 2001 .

Temperature stability of single-photon emission from InGaAs quantum dots in photonic crystal nanocavities

J. Chyi, Wen-Yen Chen, T. Hsu, 2007 .

Material and ultrafast optoelectronic properties of furnace-annealed arsenic-ion-implanted GaAs

Ci-Ling Pan, Gong-Ru Lin, T. M. Hsu, 1998 .

Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si self-assembled quantum dots

Zingway Pei, Wen-Hao Chang, M. Tsai, 2003 .

Efficient single-photon sources based on low-density quantum dots in photonic-crystal nanocavities.

Jen-Inn Chyi, Wen-Yen Chen, Wen-Hao Chang, 2006, Physical review letters.

Imaging resonant modes in photonic crystal nanocavity by atomic force microscope nano-oxidation

J. Chyi, M. Chen, T. Hsu, 2011, 2012 Conference on Lasers and Electro-Optics (CLEO).

Wavelength modulation reflectance data for CuInS2 single crystals and thin films

H. Hwang, T. Nee, T. Hsu, 1984 .

Design of multifold Ge/Si/Ge composite quantum-dot heterostructures for visible to near-infrared photodetection.

Pei-Wen Li, W. Lai, Sheng-wei Lee, 2015, Optics letters.

Excitation Density and Temperature Dependent Photoluminescence of InGaAs Self-Assembled Quantum Dots

J. Chyi, N. Yeh, Wen‐Hao Chang, 1999 .

ELECTROMODULATION REFLECTANCE OF LOW TEMPERATURE GROWN GAAS

T. Hsu, Tzu-Min Hsu, W. C. Lee, 1997 .

Quantum-confined Stark shift in electroreflectance of InAs/InxGa1−xAs self-assembled quantum dots

Wen-Hao Chang, Nien-Tze Yeh, J. Chyi, 2001 .

Large reduction in thermal conductivity for Ge quantum dots embedded in SiO2 system

Pei-Wen Li, Sheng-wei Lee, T. Hsu, 2012 .

ELECTRON-FILLING MODULATION REFLECTANCE IN CHARGED SELF-ASSEMBLED INXGA1-XAS QUANTUM DOTS

J. Chyi, T. Nee, Wen‐Hao Chang, 1999 .

Nonresonant carrier transfer in single InGaAs/GaAs quantum dot molecules

J. Chyi, Wen‐Hao Chang, Wen-Yen Chen, 2008 .

Differential photoreflectance of Si‐δ‐doped GaAs

T. Hsu, S. Tsai, N. Lu, 1994 .

A carrier escape study from InAs self-assembled quantum dots by photocurrent measurement

J. Chyi, N. Yeh, C. C. Huang, 2001 .

Modeling temperature‐dependent photoreflectance spectra of single AlGaAs/GaAs modulation‐doped heterojunctions

T. Hsu, N. Lu, 1995 .

Franz-Keldysh oscillations of δ-doped GaAs

T. Hsu, C. P. Lee, D. G. Liu, 1992 .

Pumping‐beam‐induced photovoltaic effect on the photoreflectance of a δ‐doped GaAs film

T. Hsu, D. Wang, T. Shen, 1996 .

Line shape of electromodulation in uniform electric field of δ‐doped GaAs

T. Hsu, N. Lu, M. Chang, 1994 .

Optical characterization of coherently strained short-period superlattice (InAs) n (AlAs) n grown by molecular beam epitaxy

D. W. Kim, Y. Leem, T. Hsu, 1992 .

Enhancing the optical properties of InAs quantum dots by an InAlAsSb overgrown layer

J. Chyi, Wei-Sheng Liu, Wen-Yen Chen, 2007 .

Direct measurement of piezoelectric field in In0.23Ga0.77N/GaN multiple quantum wells by electrotransmission spectroscopy

J. Chyi, Wen‐Hao Chang, T. Hsu, 2002 .

Localized states in InxGa1−xN epitaxial film

Hsiang-Szu Chang, S. Gwo, T. Hsu, 2009 .

Composition dependent Raman scattering of ZnSe1−xOx

J. Chyi, T. Hsu, Haochen Ke, 2013 .

Size-tunable strain engineering in Ge nanocrystals embedded within SiO2 and Si3N4

K. H. Chen, C. C. Wang, Pei-Wen Li, 2014 .

Matrix and quantum confinement effects on optical and thermal properties of Ge quantum dots

P. Liao, T. George, T. Hsu, 2012 .

p‐d hybridization of the valence bands of copper indium disulfide

T. Hsu, 1991 .

P-d hybridization of sulfur annealed copper indium disulfide

H. Hwang, T. Hsu, 1992 .