Kai Zhang

发表

High-efficiency S-band harmonic tuning GaN amplifier

Xiaohua Ma, Yue Hao, Kai Zhang, 2014 .

Theoretical Modeling of Triple‐Barrier Resonant‐Tunneling Diodes Based on AlGaN/GaN Heterostructures

Taotao Rong, Lin-An Yang, Y. Hao, 2019, physica status solidi (a).

A 1.9-kV/2.61-m ${\text{m}}\Omega\cdot$ cm2 Lateral GaN Schottky Barrier Diode on Silicon Substrate With Tungsten Anode and Low Turn-ON Voltage of 0.35 V

Y. Hao, Tangsheng Chen, Peijun Ma, 2018, IEEE Electron Device Letters.

Normally-Off AlGaN/GaN High Electron Mobility Transistors with Thin and High Al Composition Barrier Layers

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2013 .

A > 3 kV/2.94 m $\Omega\cdot$ cm2 and Low Leakage Current With Low Turn-On Voltage Lateral GaN Schottky Barrier Diode on Silicon Substrate With Anode Engineering Technique

Y. Hao, Tangsheng Chen, Jincheng Zhang, 2019, IEEE Electron Device Letters.

Enhancement‐mode AlGaN/GaN HEMTs with thin and high Al composition barrier layers using O2 plasma implantation

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2015 .

Degradation mechanism of enhancement-mode AlGaN/GaN HEMTs using fluorine ion implantation under the on-state gate overdrive stress*

Y. Hao, Su Weiwei, Xiao-hua Ma, 2015 .

Investigation of trap states under Schottky contact in GaN/AlGaN/AlN/GaN high electron mobility transistors

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2014 .

Study of surface leakage current of AlGaN/GaN high electron mobility transistors

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2014 .

Channel temperature determination of a multifinger AlGaN/GaN high electron mobility transistor using a micro-Raman technique

Y. Hao, Xiao-hua Ma, Xuefeng Zheng, 2012 .

Schottky forward current transport mechanisms in AlGaN/GaN HEMTs over a wide temperature range

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2014 .

A self-heating study on multi-finger AlGaN/GaN high electron mobility transistors

Y. Hao, Xiao-hua Ma, M. Cao, 2013 .

InAlN/AlN/GaN Field-Plated MIS-HEMTs with a Plasma-Enhanced Chemical Vapor Deposition SiN Gate Dielectric

Lin-An Yang, Y. Hao, Xiao-hua Ma, 2013 .

AlGaN/GaN Metal-Insulator-Semiconductor High Electron-Mobility Transistor Using a NbAlO/Al2O3 Laminated Dielectric by Atomic Layer Deposition

Lin-An Yang, Y. Hao, Xiao-hua Ma, 2012 .

Trap states in InAlN/AlN/GaN-based double-channel high electron mobility transistors

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2013 .

High-performance lateral GaN Schottky barrier diode on silicon substrate with low turn-on voltage of 0.31 V, high breakdown voltage of 2.65 kV and high-power figure-of-merit of 2.65 GW cm−2

Y. Hao, Tangsheng Chen, Jincheng Zhang, 2019, Applied Physics Express.

Demonstration of highly repeatable room temperature negative differential resistance in large area AlN/GaN double-barrier resonant tunneling diodes

Y. Hao, Xiao-hua Ma, Jincheng Zhang, 2021 .

Fabrication and characterization of InAlN/GaN-based double-channel high electron mobility transistors for electronic applications

Xiaohua Ma, Yue Hao, JunShuai Xue, 2012 .

Novel In-Situ AlN/p-GaN Gate HEMTs With Threshold Voltage of 3.9 V and Maximum Applicable Gate Voltage of 12.1 V

Tangsheng Chen, Jincheng Zhang, Shenglei Zhao, 2023, IEEE Transactions on Electron Devices.

Trap states in AlGaN channel high-electron-mobility transistors

Kai Zhang, Xiaohua Ma, Yue Hao, 2013 .