M. Yamada

C-band 340-W and X-band 100-W GaN power amplifiers with over 50-% PAE

K. Makiyama, N. Hara, M. Kanamura, 2009, 2009 IEEE MTT-S International Microwave Symposium Digest.

C-Band GaN-HEMT Power Amplifier with Over 300-W Output Power and Over 50-% Efficiency

H. Shigematsu, K. Imanishi, N. Hara, 2008, 2008 IEEE Compound Semiconductor Integrated Circuits Symposium.

C-Ku band GaN MMIC T/R frontend module using multilayer ceramics technology

H. Shigematsu, K. Imanishi, N. Okamoto, 2011, 2011 IEEE MTT-S International Microwave Symposium.

GaN single-chip transceiver frontend MMIC for X-band applications

H. Shigematsu, K. Imanishi, N. Okamoto, 2012, 2012 IEEE/MTT-S International Microwave Symposium Digest.

Millimeter-wave multi-chip module for GaN MMIC transceivers fabricated using multilayer ceramics technology

H. Shigematsu, K. Imanishi, N. Okamoto, 2013, 2013 IEEE MTT-S International Microwave Symposium Digest (MTT).