H. Otsuka

Over 57% efficiency C-band GaN HEMT high power amplifier with internal harmonic manipulation circuits

S. Chaki, Y. Tsuyama, K. Yamanaka, 2008, 2008 IEEE MTT-S International Microwave Symposium Digest.

High-Current Backside-Illuminated Photodiode Array Module for Optical Analog Links

Y. Hirano, H. Otsuka, Kiyohide Sakai, 2010, Journal of Lightwave Technology.

A 12 bit 1 MHz ACD with 1 mW power consumption

T. Iida, H. Otsuka, K. Satou, 1994, Proceedings of IEEE Custom Integrated Circuits Conference - CICC '94.

GaN X-band 43% internally-matched FET with 60W output power

K. Yamanaka, K. Yamauchi, Y. Kamo, 2008, 2008 Asia-Pacific Microwave Conference.

A low distortion Doherty amplifier by using tanh function gate bias control

K. Yamanaka, H. Fukumoto, H. Otsuka, 2014, 2014 Asia-Pacific Microwave Conference.

Mechanism Study of Gate Leakage Current for AlGaN/GaN High Electron Mobility Transistor Structure Under High Reverse Bias by Thin Surface Barrier Model and Technology Computer Aided Design Simulation

Yutaro Yamaguchi, Toshiyuki Oishi, Kazuo Hayashi, 2013 .

Simulation Study and Reduction of Reverse Gate Leakage Current for GaN HEMTs

M. Nakayama, K. Yamanaka, H. Otsuka, 2012, 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).