J. De Jaeger

发表

High linearity performances of GaN HEMT devices on silicon substrate at 4 GHz

S. Delage, C. Gaquiere, F. Semond, 2002, IEEE Electron Device Letters.

2 D-hydrodynamic energy model including avalanche breakdown phenomenon for power field effect transistors

J. De Jaeger, M. Rousseau, 2000, 7th International Workshop on Computational Electronics. Book of Abstracts. IWCE (Cat. No.00EX427).

Electrothermal Modeling of GaN Power Transistor for High Frequency Power Converter Design

A. Videt, N. Idir, J. De Jaeger, 2020, 2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe).

Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot-electron stress

S. Delage, G. Meneghesso, F. Rampazzo, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Reliability assessment in different HTO test conditions of AlGaN/GaN HEMTs

J. Bluet, V. Hoel, N. Malbert, 2010, 2010 IEEE International Reliability Physics Symposium.

Resistive Nickel Temperature Sensor Integrated Into Short-Gate Length AlGaN/GaN HEMT Dedicated to RF Applications

H. Maher, A. Cutivet, J. De Jaeger, 2018, IEEE Electron Device Letters.

Effects of Self-Heating on Performance Degradation in AlGaN/GaN-Based Devices

K. Kalna, A. Soltani, B. Benbakhti, 2009, IEEE Transactions on Electron Devices.

AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC/Si(111) for RF Applications

M. Portail, Y. Cordier, M. Bah, 2022, Materials Science Forum.

Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon

M. Khoury, Y. Cordier, J. De Jaeger, 2018 .

Power Performance at 40 GHz of AlGaN/GaN High-Electron Mobility Transistors Grown by Molecular Beam Epitaxy on Si(111) Substrate

Y. Cordier, V. Hoel, F. Lecourt, 2015, IEEE Electron Device Letters.

High microwave and noise performance of 0.17-/spl mu/m AlGaN-GaN HEMTs on high-resistivity silicon substrates

G. Dambrine, J. Massies, Y. Cordier, 2004, IEEE Electron Device Letters.

Extraction of Packaged GaN Power Transistors Parasitics Using S-Parameters

A. Videt, N. Idir, J. De Jaeger, 2019, IEEE Transactions on Electron Devices.

75-nm-T-shaped-gate InAlN/AlN/GaN HEMT on sapphire with 100 GHz cutoff frequency

A. Vescan, V. Hoel, M. Heuken, 2011, 2011 6th European Microwave Integrated Circuit Conference.

High Performance of AlGaN/GaN HEMTs Reported on Adhesive Flexible Tape

V. Hoel, E. Pichonat, J. De Jaeger, 2011, IEEE Electron Device Letters.

Microwave power capabilities of InAlN/GaN HEMTs

S. Delage, C. Gaquière, J. Carlin, 2010, 18-th INTERNATIONAL CONFERENCE ON MICROWAVES, RADAR AND WIRELESS COMMUNICATIONS.

Temperature dependent degradation modes in AlGaN/GaN HEMTs

J. Bluet, V. Hoel, N. Malbert, 2010, The 5th European Microwave Integrated Circuits Conference.

Performance of Unstuck - Gate AlGaN/GaN HEMTs on (001) Silicon Substrate at 10 GHz

S. Joblot, Y. Cordier, C. Gaquière, 2008, 2008 European Microwave Integrated Circuit Conference.

Thermal behaviour of gate-less AlGaN/GaN heterostructures

J. Laureyns, A. Soltani, B. Benbakhti, 2007, 2007 European Microwave Integrated Circuit Conference.

Analysis of Thermal Effect Influence in Gallium-Nitride-Based TLM Structures by Means of a Transport–Thermal Modeling

A. Soltani, B. Benbakhti, J. De Jaeger, 2006, IEEE Transactions on Electron Devices.

Optimization of ${\rm Al}_{0.29}{\rm Ga}_{0.71}{\rm N}/{\rm GaN}$ High Electron Mobility Heterostructures for High-Power/Frequency Performances

Y. Cordier, S. Chenot, V. Hoel, 2013, IEEE Transactions on Electron Devices.

AlGaN/GaN HEMTs on (001) Silicon Substrate With Power Density Performance of 2.9 W/mm at 10 GHz

Christophe Gaquiere, Ali Soltani, Fabrice Semond, 2010, IEEE Transactions on Electron Devices.

Power Performance of AlGaN/GaN High-Electron-Mobility Transistors on (110) Silicon Substrate at 40 GHz

Y. Cordier, D. Ducatteau, A. Soltani, 2013, IEEE Electron Device Letters.

AlGaN/GaN HEMTs on a (001)-Oriented Silicon Substrate Based on 100-nm SiN Recessed Gate Technology for Microwave Power Amplification

J. Massies, S. Joblot, Y. Cordier, 2007, IEEE Transactions on Electron Devices.

High transconductance AlGaN/GaN HEMT with thin barrier on Si(111) substrate

V. Hoel, H. Maher, F. Lecourt, 2010, 2010 Proceedings of the European Solid State Device Research Conference.

Power results at 4 GHz of AlGaN/GaN HEMTs on high resistive silicon [111] substrate

Y. Cordier, C. Gaquière, N. Vellas, 2003, IEEE Microwave and Wireless Components Letters.

Effects of high temperature on the electrical behavior of AlGaN/GaN HEMTs

C. Gaquière, E. Kohn, V. Hoel, 2002 .

Achievement and perspective of GaN technology for microwave applications

S. Delage, C. Gaquière, J. Jacquet, 2010, 18-th INTERNATIONAL CONFERENCE ON MICROWAVES, RADAR AND WIRELESS COMMUNICATIONS.

Characterisation of AlGaN/GaN HEMT epitaxy and devices on composite substrates

G. Meneghesso, E. Zanoni, V. Hoel, 2007, 2007 IEEE International Electron Devices Meeting.

Large-signal modeling up to W-band of AlGaN/GaN based high-electron-mobility transistors

V. Hoel, H. Maher, A. Cutivet, 2015, 2015 10th European Microwave Integrated Circuits Conference (EuMIC).

The effect of gate length variation on InAlGaN/GaN HFET device characteristics

A. Vescan, V. Hoel, M. Heuken, 2012 .

Theoretical and experimental investigation of Lamb waves characteristics in AlN/TiN and AlN/TiN/NCD composite membranes

V. Mortet, A. Soltani, P. Pernod, 2014, 2014 IEEE International Ultrasonics Symposium.

Grain size tuning of nanocrystalline chemical vapor deposited diamond by continuous electrical bias growth: Experimental and theoretical study

K. Haenen, J. D’Haen, V. Mortet, 2012 .

Punch-through in short-channel AlGaN/GaN HFETs

D. Ducatteau, J.C. De Jaeger, E. Morvan, 2006, IEEE Transactions on Electron Devices.

Assessment of transistors based on GaN on silicon substrate in view of integration with silicon technology

S. Joblot, Y. Cordier, A. Soltani, 2013 .

Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate

S. Delage, C. Gaquiere, D. Ducatteau, 2006, IEEE Electron Device Letters.

AlGaN-GaN HEMTs on Si with power density performance of 1.9 W/mm at 10 GHz

C. Gaquiere, D. Ducatteau, J.C. De Jaeger, 2004, IEEE Electron Device Letters.

Electrical activity at the AlN/Si Interface: identifying the main origin of propagation losses in GaN-on-Si devices at microwave frequencies

Y. Cordier, D. Valente, M. Bah, 2020, Scientific Reports.

Proposal and Performance Analysis of Normally Off $ \hbox{n}^{++}$ GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier

C. Gaquière, J. Carlin, M. Gonschorek, 2010, IEEE Transactions on Electron Devices.

AlGaN/GaN HEMTs on Silicon Substrate With 206-GHz $F_{ \rm MAX}$

H. Maher, P. Frijlink, S. Bouzid-Driad, 2013, IEEE Electron Device Letters.

First results of AlGaN/GaN HEMTs on sapphire substrate using an argon‐ion implant‐isolation technology

C. Gaquière, N. Vellas, M. Germain, 2005 .

Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate

M. Portail, Y. Cordier, F. Vaurette, 2023, Microelectronic Engineering.

2 W mm−1 power density of an AlGaN/GaN HEMT grown on free-standing GaN substrate at 40 GHz

Y. Cordier, J. Tartarin, J. De Jaeger, 2019, Semiconductor Science and Technology.

New developments on diamond photodetector for VUV solar observations

U. Kroth, K. Haenen, V. Mortet, 2008 .

AlGaN/GaN HEMTs on epitaxies grown on composite substrate

C. Brylinski, H. Gerard, J.C. De Jaeger, 2007, 2007 European Microwave Integrated Circuit Conference.

Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design

Thomas Zimmer, Yogesh Singh Chauhan, Tor A. Fjeldly, 2013, IEEE Transactions on Electron Devices.

Fabrication, and Direct Current and cryogenic analysis of SF6-treated AlGaN/GaN Schottky barrier diodes

N. Idir, Y. Cordier, J. De Jaeger, 2023, Journal of Vacuum Science & Technology B.

Optimization of AlGaN/GaN HEMT Schottky contact for microwave applications

V. Hoel, H. Maher, J. De Jaeger, 2012, 2012 7th European Microwave Integrated Circuit Conference.

Using low frequency noise characterization of AlGaN/GaN HEMT as a tool for technology assessment and failure prediction

Robert Plana, Sylvain Delage, Jacques Graffeuil, 2004, SPIE International Symposium on Fluctuations and Noise.

High efficiency GaInAs/InP heterojunction IMPATT diodes

G. Salmer, J. De Jaeger, R. Kozlowski, 1983, IEEE Transactions on Electron Devices.

InP MISFET capabilities for microwave power amplification

J. De Jaeger, Y. Crosnier, P. Fellon, 1990, International Conference on Indium Phosphide and Related Materials.

Investigation of Current Collapse Mechanism on AlGaN/GaN Power Diodes

N. Idir, J. De Jaeger, Loris Pace, 2023, Electronics.