R. Coffie

发表

Power and linearity characteristics of field-plated recessed-gate AlGaN-GaN HEMTs

R. Coffie, A. Chini, D. Buttari, 2004, IEEE Electron Device Letters.

Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys

James S. Speck, Umesh K. Mishra, Debdeep Jena, 2002 .

12 W/mm power density AlGaN/GaN HEMTs on sapphire substrate

Umesh K. Mishra, Alessandro Chini, Sarah L. Keller, 2004 .

Dual-gate AlGaN/GaN modulation-doped field-effect transistors with cut-off frequencies f/sub T/>60 GHz

R. Coffie, S. Keller, K. Krishnamurthy, 2000, IEEE Electron Device Letters.

Intracavity gain and absorption dynamics of hybrid modelocked semiconductor lasers using multiple quantum well saturable absorbers

S. Gee, R. Coffie, G. Alphonse, 1997 .

In situ SiN passivation of AlGaN/GaN HEMTs by molecular beam epitaxy

Vincent Gambin, Mike Wojtowicz, Robert Coffie, 2007 .

High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation

R. Coffie, A. Chini, D. Buttari, 2004, IEEE Electron Device Letters.

2.1 A/mm current density AlGaN/GaN HEMT

Gaudenzio Meneghesso, Enrico Zanoni, Umesh K. Mishra, 2003 .

Slant Field Plate Model for Field-Effect Transistors

R. Coffie, 2014, IEEE Transactions on Electron Devices.

Systematic characterization of Cl 2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs

S. Denbaars, U. Mishra, N. Zhang, 2002 .

Effect of gate recessing on linearity characteristics of AlGaN/GaN HEMTs

T. Palacios, S. Keller, U. Mishra, 2004, Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC..

Calculating drain delay in high electron mobility transistors

R. Coffie, 2015 .

Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys

S. Denbaars, D. Jena, H. Xing, 2002, cond-mat/0204487.

High Power High Frequency Transistors: A Material’s Perspective

R. Coffie, 2019, High-Frequency GaN Electronic Devices.

Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors

Jaime A. Freitas, James S. Speck, Umesh K. Mishra, 2001 .

Temperature and Voltage Dependent RF Degradation Study in Algan/gan HEMTs

M. Wojtowicz, A. Oki, R. Coffie, 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

High performance AlGaN/GaN HEMTs with a field plated gate structure

A. Chakraborty, S. Keller, D. Buttari, 2003, International Semiconductor Device Research Symposium, 2003.

AlGaN/AlN/GaN high-power microwave HEMT

R. Coffie, S. Keller, D. Buttari, 2001, IEEE Electron Device Letters.

Origin of etch delay time in Cl2 dry etching of AlGaN/GaN structures

Umesh K. Mishra, Alessandro Chini, Tomas Palacios, 2003 .

Systematic characterization of Cl 2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs

Gaudenzio Meneghesso, Enrico Zanoni, Umesh K. Mishra, 2002 .

p-capped GaN-AlGaN-GaN high-electron mobility transistors (HEMTs)

U. Mishra, S. Keller, S. Heikman, 2002, IEEE Electron Device Letters.

Micro-transfer Printing of GaN HEMTs for Heterogeneous Integration and Flexible RF Circuit Design

Yu Cao, David J. Meyer, Neeraj Nepal, 2020, 2020 Device Research Conference (DRC).

Unpassivated p-GaN/AlGaN/GaN HEMTs with 7.1 W/mm at 10 GHz

Umesh K. Mishra, Giacinta Parish, Alessandro Chini, 2003 .

High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology

Mark J. W. Rodwell, S. I. Long, Umesh K. Mishra, 2003 .

Oxidation control of GaAs pHEMTs for high efficiency applications

U. Mishra, D. Buttari, R. Coffie, 2002, IEEE Electron Device Letters.