V. Shastin

发表

The p-Ge terahertz laser-properties under pulsed- and mode-locked operation

J. Hovenier, M. Diez, T. Klaassen, 2000 .

Terahertz lasers based on intracentre transitions of group V donors in uniaxially deformed silicon

S. Pavlov, H. Hübers, V. Shastin, 2015 .

On the phonon-assisted relaxation of excited bismuth donor states in uniaxially stressed silicon

V. Shastin, R. Zhukavin, V. V. Tsyplenkov, 2014 .

Shallow-donor lasers in uniaxially stressed silicon

H. Riemann, S. Pavlov, H. Hübers, 2013 .

Effect of uniaxial stress on intervalley phonon-assisted relaxation of excited shallow-donor states in silicon

V. Shastin, K. Kovalevsky, V. V. Tsyplenkov, 2009 .

Lifetimes of operating states in terahertz intracenter silicon lasers

P. J. Phillips, S. Pavlov, V. Shastin, 2009, 2009 International Workshop Terahertz and Mid Infrared Radiation: Basic Research and Practical Applications.

Relaxation of excited donor states in silicon with emission of intervalley phonons

V. Shastin, K. Kovalevsky, V. V. Tsyplenkov, 2008 .

Tunable hot hole FIR lasers and CR masers

S. A. Pavlov, A. Andronov, V. Gavrilenko, 1985 .

Broad band p-Ge optical amplifier of terahertz radiation

S. H. Withers, A. Muravjov, S. Pavlov, 1999 .

Terahertz optically pumped Si:Sb laser

H. Riemann, S. Pavlov, H. Hübers, 2002 .

Low-threshold terahertz Si:As laser

H. Riemann, V. Shastin, K. Kovalevsky, 2007 .

Terahertz emission at impurity electrical breakdown in Si(Li)

V. Shastin, R. Zhukavin, N. Abrosimov, 2016 .

Terahertz intracenter photoluminescence of silicon with lithium at interband excitation

A. Bobylev, V. Shastin, R. Zhukavin, 2015 .

Far-infrared stimulated emission from optically excited bismuth donors in silicon

H. Riemann, S. Pavlov, H. Hübers, 2002 .

Terahertz Emission Spectra of Optically Pumped Silicon Lasers

H. Riemann, M. Kimmitt, H. Hübers, 2002 .

Stimulated terahertz emission from group-V donors in silicon under intracenter photoexcitation

H. Riemann, I. Bradley, S. Pavlov, 2002 .

Stimulated terahertz emission from arsenic donors in silicon

H. Riemann, H. Hübers, V. Shastin, 2004 .

Frequency Tuning of Terahertz Stimulated Emission under the Intracenter Optical Excitation of Uniaxially Stressed Si:Bi

H. Riemann, S. Pavlov, H. Hübers, 2020 .

Stimulated Terahertz Emission of Bismuth Donors in Uniaxially Strained Silicon under Optical Intracenter Excitation

H. Riemann, B. Redlich, V. Shastin, 2019, Semiconductors.

Influence of uniaxial stress on stimulated terahertz emission from phosphor and antimony donors in silicon

H. Riemann, S. Pavlov, H. Hübers, 2007 .

Dynamics of non‐equilibrium charge carriers in p‐germanium doped by gallium

S. Winnerl, H. Schneider, H. Hübers, 2017 .

Time-resolved electronic capture in germanium doped with hydrogen-like impurity centers

S. Winnerl, S. Pavlov, V. Shastin, 2012, 2012 37th International Conference on Infrared, Millimeter, and Terahertz Waves.

Competing Inversion-Based Lasing and Raman Lasing in Doped Silicon

H. Riemann, H. Hübers, B. Redlich, 2018, Physical Review X.

THz oscillators based on intraband transitions in bulk semiconductors

Valery N. Shastin, Andrei V. Muravjov, Ekaterina E. Orlova, 1999, Industrial Lasers and Inspection.

Mode fine structure of the p-Ge intervalenceband laser measured by heterodyne mixing spectroscopy with an optically pumped ring gas laser

Valery N. Shastin, Andrei V. Muravjov, Erik Bründermann, 1995 .

Influence of shallow acceptor states on the operation of the fir hot hole p-Ge laser

S. Pavlov, A. Muravjov, V. Shastin, 1996 .

Lifetime-limited, subnanosecond terahertz germanium photoconductive detectors

S. Winnerl, S. Pavlov, H. Hübers, 2015 .

The relaxation times of donor bound electrons in germanium

S. Pavlov, H. Hübers, B. Knyazev, 2020 .

Terahertz emission from silicon doped by shallow impurities

H. Riemann, H. Hübers, M. Rümmeli, 2001 .

Terahertz Raman laser based on silicon doped by phosphorus

H. Riemann, B. Redlich, V. Shastin, 2008, 2008 33rd International Conference on Infrared, Millimeter and Terahertz Waves.

Terahertz pump — Terahertz probe system at Novosibirsk free electron laser: Commissioning and results of first experiments

G. N. Kulipanov, H. Schneider, B. Knyazev, 2016, 2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz).

First terahertz-range experiments on pump – probe setup at Novosibirsk free electron laser

G. N. Kulipanov, H. Schneider, H. Hübers, 2016 .

Terahertz stimulated emission from silicon doped by hydrogenlike acceptors

S. Winnerl, H. Riemann, S. Pavlov, 2014 .

Terahertz silicon lasers based on intracenter impurity transitions

H. Hübers, V. Shastin, R. Zhukavin, 2014 .

Optimizing the Operation of Terahertz Silicon Lasers

S. Pavlov, V. Shastin, K. Kovalevsky, 2009, IEEE Journal of Selected Topics in Quantum Electronics.

Evidence of noncascade intracenter electron relaxation in shallow donor centers in silicon

S. Pavlov, H. Hübers, B. Redlich, 2008 .

Terahertz gain on shallow donor transitions in silicon

S. Pavlov, H. Hübers, J. Hovenier, 2007 .

Frequency tunability of the terahertz silicon laser by a magnetic field

H. Riemann, M. Kimmitt, S. Pavlov, 2006 .

Terahertz silicon lasers

V. Shastin, H. Hubers, S. Pavlov, 2006, 2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference.

Nonequilibrium electron distribution in terahertz intracentre silicon lasers

S. Pavlov, H. Hübers, V. Shastin, 2004 .

The resolved terahertz emission in Si:P under resonant pumping of donor centres with picosecond optical pulses

P. J. Phillips, H. Riemann, S. Pavlov, 2004 .

The silicon lasers based on impurity state transitions

S. Pavlov, V. Shastin, R. Zhukavin, 2004, Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004..

Generation of THz emission from donor centers in silicon under intracenter optical pumping

H. Riemann, S. Pavlov, B. Redlich, 2004, Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004..

Stimulated THz emission from Si:P and Si:Bi under resonant intracenter optical pumping

D. M. Gaponova, H. Riemann, S. Pavlov, 2002, Twenty Seventh International Conference on Infrared and Millimeter Waves.

The emission spectra of optically pumped Si-based THz lasers

D. M. Gaponova, H. Riemann, S. Pavlov, 2002, Proceedings, IEEE Tenth International Conference on Terahertz Electronics.

The physics of optically pumped semiconductor bulk lasers for the 5-15 THz frequency range

S. Pavlov, H. Hübers, M. Rümmeli, 2001 .

FIR lasing based on group V donor transitions in silicon

H. Riemann, H. Hübers, M. Rümmeli, 2001 .

Excitation of intracenter terahertz radiation by plasma oscillations in electron–hole liquid

V. Shastin, N. Abrosimov, R. Zhukavin, 2022, Materials Science and Engineering: B.

FEL-based study of intervalley elastic scattering of donor excited states in multivalley semiconductors.

S. Pavlov, H. Hübers, V. Shastin, 2016 .

Terahertz emission from lithium doped silicon under continuous wave interband optical excitation

V. Shastin, N. Abrosimov, R. Zhukavin, 2015 .

Possibility of THz donor lasing in electrically pumped silicon

S. Pavlov, V. Shastin, R. Zhukavin, 2013, 2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz).

Tunable Optically pumped high power terahertz laser on cyclotron resonance in semiconductors

M. Shur, D. Veksler, V. Shastin, 2007, 2007 International Semiconductor Device Research Symposium.

A scheme of cascade laser on impurity states in selectively doped superlattices

V. Shastin, N. Bekin, 2007 .

D− centers in intracenter Si:P lasers

H. Riemann, H. Hübers, V. Shastin, 2005 .

Gain in silicon lasers based on shallow donor transitions

J. Hovenier, T. Klaassen, V. Shastin, 2004, Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004..

Optically pumped terahertz semiconductor bulk lasers

H. Riemann, H. Hübers, H. Nakata, 2003 .

Silicon Lasers Based On Shallow Donor Centres

H. Riemann, S. Pavlov, H. Hübers, 2003 .

Optically pumped terahertz silicon lasers

H. Riemann, S. Pavlov, V. Shastin, 2002, Proceedings, IEEE Tenth International Conference on Terahertz Electronics.

Isotope effect on the lifetime of the 2p(0) state in phosphorus-doped silicon

H. Riemann, N. Abrosimov, P. Becker, 2013 .

Influence of group II and III shallow acceptors on the gain of p-Ge lasers

S. Pavlov, H. Hübers, A. Muravjov, 2001 .

Electron States of Group-V Donors in Germanium: Variational Calculation Taking into Account the Short-Range Potential

V. Shastin, A. Konakov, A. Revin, 2020 .

Landau quantization and hot hole stimulated FIR emission in crossed electric and magnetic fields

V. Shastin, A. V. Murav'jov, 1991 .

Influence of uniaxial stress on phonon-assisted relaxation in bismuth-doped silicon

P. J. Phillips, K. Saeedi, H. Riemann, 2020 .

Terahertz lasers based on germanium and silicon

Valery N. Shastin, H.-W. Hübers, H. Hübers, 2005 .

Even‐Parity Excited States in Infrared Emission, Absorption, and Raman Scattering Spectra of Shallow Donor Centers in Silicon

S. Pavlov, H. Hübers, V. Shastin, 2018, physica status solidi (b).

Dynamics of nonequilibrium electrons on neutral center states of interstitial magnesium donors in silicon

S. Winnerl, H. Schneider, S. Pavlov, 2016 .

Chemical Shift and Exchange Interaction Energy of the 1s States of Magnesium Donors in Silicon. The Possibility of Stimulated Emission

H. Hübers, V. Shastin, K. Kovalevsky, 2019, Semiconductors.

Diffusion doping of silicon with magnesium

S. Pavlov, H. Hübers, V. Shastin, 2017 .

Stimulated emission in the long-wavelength IR region from hot holes in Ge in crossed electric and magnetic fields

S. A. Pavlov, A. Andronov, V. Shastin, 1984 .

Terahertz lasing from silicon doped with boron

H. Riemann, B. Redlich, V. Shastin, 2012, 2012 37th International Conference on Infrared, Millimeter, and Terahertz Waves.

Stimulated terahertz stokes emission of silicon crystals doped with antimony donors.

P. J. Phillips, H. Riemann, S. Pavlov, 2006, Physical review letters.

The physical principles of terahertz silicon lasers based on intracenter transitions

H. Hübers, V. Shastin, R. Zhukavin, 2013 .

Stimulated emission on impurity – band optical transitions in semiconductors

V. Shastin, N. Bekin, 2015 .

Spin-orbit coupling effect on bismuth donor lasing in stressed silicon

H. Riemann, A. Ramdas, S. Pavlov, 2011 .

Dynamics of infrared excitations in boron doped diamond

V. S. Bormashov, K. Saeedi, S. Pavlov, 2019, Diamond and Related Materials.

Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon

H. Hübers, V. Shastin, D. Kozlov, 2016 .

Terahertz transient stimulated emission from doped silicon

H. Riemann, S. Pavlov, H. Hübers, 2020 .

Cascade capture of charge carriers in highly doped semiconductors

R. Kelsall, S. Pavlov, H. Hübers, 2018, Journal of Applied Physics.

Coulomb centers assisted tunneling in a δ-doped triple barrier SiGe heterostructure

D. N. Lobanov, M. Drozdov, V. Shastin, 2014 .

Terahertz Emission from Phosphor Centers in SiGe and SiGe/Si Semiconductors

A. N. Yablonsky, H. Riemann, H. Hübers, 2007 .

Actively mode-locked p-Ge laser in Faraday configuration

S. H. Withers, A. Muravjov, S. Pavlov, 1999 .

Gain of the mode locked p-Ge laser in the low field region

Valery N. Shastin, Andrei V. Muravjov, W.Th. Wenckebach, 1998 .

Active mode locking of a p-Ge hot hole laser

Valery N. Shastin, Andrei V. Muravjov, W.Th. Wenckebach, 1997 .

Hot hole inter-sub-band transition p-Ge FIR laser

V. N. Shastin, V. Shastin, 1991 .

Recent experiments at NovoFEL user stations

T. V. Salikova, A. Skrinsky, B. Knyazev, 2018 .

Low-temperature intracenter relaxation times of shallow donors in germanium

H. Schneider, H. Hübers, N. Vinokurov, 2017, JETP Letters.

Fast relaxation of free carriers in compensated n- and p-type germanium

S. Winnerl, H. Riemann, S. Pavlov, 2013, 2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz).

Pulse buildup of the germanium far‐infrared laser

Fritz Keilmann, V. N. Shastin, F. Keilmann, 1991 .

Raman lasers due to scattering on donor electronic resonances in silicon

H. Riemann, H. Hübers, B. Redlich, 2009 .

Terahertz Raman laser from silicon doped by arsenic

H. Riemann, H. Hübers, J. Hovenier, 2009, 2009 34th International Conference on Infrared, Millimeter, and Terahertz Waves.

Stimulated terahertz emission due to electronic Raman scattering in silicon

H. Riemann, S. Pavlov, H. Hübers, 2009 .

Relaxation of upper laser levels in terahertz silicon lasers

P. J. Phillips, S. Pavlov, J. Hovenier, 2008, 2008 5th IEEE International Conference on Group IV Photonics.

Terahertz lasing from silicon by infrared Raman scattering on bismuth centers

H. Riemann, S. Pavlov, H. Hübers, 2009 .

Tunable fir lasers in semiconductors using hot holes

Valery N. Shastin, A. Andronov, V. Shastin, 1987 .

Intrasubband fast absorption and emission of terahertz radiation by hot electrons in GaAs/AlGaAs MQW

V. Shastin, R. Zhukavin, S. Danilov, 1999 .

Single-mode tunable FIR pulsed p-Ge laser

A. Muravjov, S. Pavlov, V. Shastin, 1994, Proceedings of IEEE 14th International Semiconductor Laser Conference.

Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures

H. Hübers, V. Shastin, K. Kovalevsky, 2015, Semiconductors.

A cascade laser on shallow-donor transitions in δ-Doped GaAs/AlGaAs superlattices

V. Shastin, N. Bekin, 2008 .

Silicon donor and Stokes terahertz lasers

H. Riemann, S. Pavlov, H. Hübers, 2006 .

Stimulated emission from donor transitions in silicon

Pavlov, Orlova, Kirsanov, 2000, Physical review letters.

Terahertz luminescence of GaAs-based heterostructures with quantum wells under the optical excitation of donors

V. Shastin, R. Zhukavin, E. Uskova, 2005 .