S. Martin

发表

Performance of a 1.2 THz frequency tripler using a GaAs frameless membrane monolithic circuit

I. Mehdi, D. Pukala, A. Maestrini, 2001, 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157).

Improved 240-GHz subharmonically pumped planar Schottky diode mixers for space-borne applications

P. Siegel, I. Mehdi, T. Crowe, 1998 .

Fabrication of 200 to 2700 GHz multiplier devices using GaAs and metal membranes

I. Mehdi, E. Schlecht, A. Fung, 2001, 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157).

200, 400 and 800 GHz Schottky diode "substrateless" multipliers: design and results

I. Mehdi, G. Chattopadhyay, E. Schlecht, 2001, 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157).

Fabrication and performance of planar Schottky diodes with T-gate-like anodes in 200-GHz subharmonically pumped waveguide mixers

Peter H. Siegel, Imran Mehdi, R. P. Smith, 1996 .

600 GHz planar-Schottky-diode subharmonic waveguide mixers

Peter H. Siegel, Imran Mehdi, R. P. Smith, 1996, 1996 IEEE MTT-S International Microwave Symposium Digest.

Transferred-substrate heterojunction bipolar transistor integrated circuit technology

Mark J. W. Rodwell, S. I. Long, D. Mensa, 1999, Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362).

Transferred-substrate HBT integrated circuits

M. Rodwell, R. Smith, S. Long, 1999 .

A subKelvin scanning probe microscope for the electronic spectroscopy of an individual nano-device.

C. Winkelmann, S. Martin, A. Gerardin, 2012, The Review of scientific instruments.

Traveling-Wave Membrane Photomixers

A. Gossard, P. Siegel, A. Neto, 2001 .

Ultra high frequency HBT integrated circuits

S. Long, D. Mensa, Q. Lee, 1999 .

Bias stabilization for resonant tunnel diode oscillators

Mark J. W. Rodwell, R. P. Smith, S. C. Martin, 1995 .

Submicron Lateral Scaling of Vertical-Transport Devices Transferred-Substrate Bipolar Transistors and Schottky-Collecto Tunnel Diodes

M. Rodwell, R. Smith, D. Mensa, 1997 .

A 2.5-THz receiver front end for spaceborne applications

Peter H. Siegel, Herbert M. Pickett, R. P. Smith, 2000 .

Fabrication and performance of separately-biasable antiparallel-pair "T-anode" mixer diodes employing a compact multiple-layer integrated bias circuit at 210 GHz

P. Siegel, R. Smith, I. Mehdi, 1996, 1996 IEEE MTT-S International Microwave Symposium Digest.

Submicron Schottky-Collector AlAs/InGaAs/InP Resonant Tunnel Diodes

R. Muller, R. Smith, M. Rodwell, 1995 .

2.5 THz GaAs Monolithic Membrane-Diode Mixer A New Planar Circut Realization for High Frequency Semiconductor Components

Peter H. Siegel, R. P. Smith, Michael C. Gaidis, 1998 .

Progress Towards the Realization of MMIC Technology at Submillimeter A Frequency Multiplier to 320 GHz

P. Siegel, R. Smith, J. Bruston, 2000 .

Evaluation of device quality germanium‐germanium oxynitride interfaces by high‐resolution transmission electron microscopy

M. Kawasaki, D. Paine, J. Rosenberg, 1990 .

Submicron lateral scaling of HBTs and other vertical-transport devices:towards THz bandwidths

Yun Wei, Mark J. W. Rodwell, S. I. Long, 2000 .

SCALING OF InGaAs/InAlAsHBTs FOR HIGH SPEED MIXED-SIGNAL AND mm-WAVE ICs

Mark J. W. Rodwell, S. I. Long, R. P. Smith, 2001 .

Ripples and Charge Puddles in Graphene on a Metallic Substrate

C. Winkelmann, S. Martin, J. Coraux, 2013, 1304.1183.

Submicron scaling of HBTs

Mark J. W. Rodwell, S. I. Long, R. P. Smith, 2001 .

An Al Ga N/GaN Undoped Channel Heterostructure Field Effect Transistor with of 107 GHz

R. Smith, K. Boutros, J. Redwing, 1999 .

Fabrication and dc, microwave characteristics of submicron Schottky‐collector AlAs/In0.53Ga0.47As/InP resonant tunneling diodes

M. Reddy, Richard E. Muller, R. P. Smith, 1995 .

Germanium p-channel MOSFET's with high channel mobility, transconductance, and k-value

J. Rosenberg, S. Martin, L. M. Hitt, 1989 .

Electron Beam Lithography for the Fabrication of Air-bridged, Submicron Schottky Collectors

M. Reddy, Richard E. Muller, R. P. Smith, 1994 .

A broadband 800 GHz Schottky balanced doubler

I. Mehdi, G. Chattopadhyay, E. Schlecht, 2002, IEEE Microwave and Wireless Components Letters.

200 and 400 GHz Schottky diode multipliers fabricated with integrated air-dielectric (substrateless) circuitry

Erich Schlecht, Imran Mehdi, Andy Fung, 2000 .

Development of millimeter- and submillimeter-wave local oscillator circuits for a space telescope

Peter H. Siegel, S. C. Martin, John C. Pearson, 1999, Optics & Photonics.

Design Considerations for Heavily-Doped Cryogenic Schottky Diode Varactor Multipliers

Erich Schlecht, Goutam Chattopadhyay, Imran Mehdi, 2001 .

Advances in Submillimeter Semiconductor-Based Device Designs and Processes

Peter H. Siegel, Neal R. Erickson, Imran Mehdi, 1997 .

A high-power wideband cryogenic 200 GHz schottky substrateless multiplier: modeling, design and results

Alain Maestrini, Erich Schlecht, Goutam Chattopadhyay, 2001 .